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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6201TRPBF

Name: IRF6201TRPBF
Brand: Infineon Technologies
SKU: IRF6201TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6201TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF6201TRPBF.pdf

Description:: MOSFET N-CH 20V 27A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6201TRPBF from Infineon Technologies (formerly International Rectifier) is a 20 V, 27 A, logic-level N-channel HEXFET Power MOSFET in SO-8 package, optimized for low-voltage high-current switching in OR-ing, hot-swap, and load-switch applications. It delivers R_DS(on) = 2.45 mΩ @ V_GS = 4.5 V, Q_g = 130 nC, and operates up to +150 °C junction temperature.

For engineers reviewing the IRF6201TRPBF datasheet, IRF6201TRPBF pinout, IRF6201TRPBF application, or IRF6201TRPBF equivalent, key selection criteria include on-resistance at 4.5 V gate drive, pulsed current capability (110 A), thermal resistance (R_θJA = 50 °C/W), and SO-8 footprint compatibility with multi-vendor board designs.

Technical Context

This MOSFET employs a trench-gate silicon process enabling low R_DS(on) at logic-level gate drive (V_GS(th) = 0.5–1.1 V). Its body diode exhibits t_rr = 82–120 ns and Q_rr = 180–270 nC, supporting moderate-frequency synchronous rectification and bidirectional current handling in DC motor inverters.

The device features a rated V_DS of 20 V with 4.6 mV/°C temperature coefficient, linear derating factor of 0.02 W/°C above 70 °C, and safe operating area limited by R_DS(on) up to 100 µs pulses at T_J = 150 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage for 12 V rail systems and battery-powered loads
R_DS(on) @ 4.5 V	2.45 mΩ - Enables ≤65 mW conduction loss at 27 A continuous current
Q_g	130 nC - Determines gate driver power requirement and switching speed with 6.8 Ω resistor
I_D (T_A = 25°C)	27 A - Continuous current rating under standard SO-8 PCB mounting (1 in² copper)
T_J Range	−55 to +150 °C - Supports operation in industrial and automotive under-hood environments
C_iss	8555 pF - Impacts high-frequency gate drive loop stability and EMI behavior

Pinout & Package

IRF6201TRPBF uses the industry-standard SO-8 surface-mount package (5.0 × 6.0 mm, 1.27 mm pitch), with exposed drain pad for enhanced thermal performance. Pin 1 is Gate, Pins 2–4 and 5–7 are Source (common), and Pin 8 is Drain.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Logic-level control input; threshold 0.5–1.1 V enables direct MCU GPIO drive
2,3,4,5,6,7 (S)	Source	Common source node; six parallel pins reduce bond-wire inductance and improve current sharing
8 (D)	Drain	Main power output terminal; connected to exposed pad for thermal and current path efficiency

Key Features

Feature	Design Value
Low R_DS(on) @ 4.5 V	2.45 mΩ - Reduces I²R losses in battery-switching paths where gate voltage is constrained
SO-8 footprint	Industry-standard 8-pin SOIC - Enables drop-in replacement across multiple vendors without layout change
RoHS-compliant	No lead, bromide, or halogen - Meets IPC-J-STD-609A Class 1 requirements for green electronics
Body diode t_rr	82–120 ns - Supports efficient freewheeling in half-bridge motor drives without external Schottky

Applications

Battery OR-ing Circuit

Hot-Swap Controller Switch

Use Scenario: Dual-battery redundancy in portable medical devices requiring seamless switchover without voltage dip.

IC Role / Device Role / Timing Role: Low-side OR-ing switch controlling current direction between two Li-ion packs.

Use Value: 2.45 mΩ R_DS(on) limits voltage drop to <100 mV at 25 A, preserving system regulation margin.

Use Scenario: Inrush-limited insertion of 12 V backplane modules into live telecom shelves.

IC Role / Device Role / Timing Role: High-current load switch controlled by dedicated hot-swap controller (e.g., LTC4215).

Use Value: 110 A pulsed rating handles surge during capacitor charging; SO-8 thermal profile supports 2.5 W dissipation.

DC Motor Half-Bridge

System Load Switch

Use Scenario: Bidirectional 24 V brushed motor control in warehouse robotics with PWM frequencies up to 20 kHz.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge topology; body diode conducts reverse current during PWM off-time.

Use Value: 82 ns t_rr minimizes diode recovery loss; Q_g = 130 nC enables fast turn-on with 1 A gate driver.

Use Scenario: Remote-controlled power gating of FPGA core rails in industrial PLCs.

IC Role / Device Role / Timing Role: High-side or low-side power switch activated via microcontroller GPIO.

Use Value: Logic-level V_GS(th) (max 1.1 V) ensures full enhancement with 3.3 V MCU outputs; 27 A rating covers peak FPGA load transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7852DP-T1-GE3	R_DS(on) = 2.3 mΩ @ 4.5 V; Q_g = 110 nC; SO-8 package	Slightly lower gate charge improves switching efficiency at >50 kHz PWM	Preferred for high-frequency DC-DC output stages where gate drive loss dominates
DMN2020LSD-13	R_DS(on) = 2.7 mΩ @ 4.5 V; Q_g = 145 nC; same SO-8 footprint	Higher R_DS(on) increases conduction loss but offers tighter V_GS(th) distribution	Selected when production yield requires tighter gate threshold control over temperature

Compared with IRF6201TRPBF, Si7852DP-T1-GE3 offers lower switching loss at high frequency, while DMN2020LSD-13 trades 0.25 mΩ higher on-resistance for improved V_GS(th) consistency-critical in temperature-variable load-switch deployments.

Availability

IRF6201TRPBF is available at Aetrix Electronics and suitable for battery OR-ing, hot-swap module insertion, and DC motor inverter applications requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF6201TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The IRF6201TRPBF belongs to Infineon's HEXFET® logic-level MOSFET product line, engineered specifically for high-current, low-voltage switching in space-constrained battery-powered and hot-plug systems.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The IRF6201TRPBF supports 22 A continuous drain current at T_A = 70°C with standard SO-8 mounting on 1 inch² copper. This rating assumes no forced airflow and accounts for thermal derating beyond 25°C ambient, using R_θJA = 50 °C/W and P_D = 1.6 W at 70°C.

Does this MOSFET require a gate resistor for driving from a 3.3 V microcontroller?

Yes-a series gate resistor (typically 10–47 Ω) is recommended to dampen ringing and limit peak gate current. While V_GS(th) is as low as 0.5 V, the 130 nC total gate charge requires controlled slew rate to prevent shoot-through in bridge configurations and reduce EMI.

Can IRF6201TRPBF be used in parallel with identical units?

Yes-its positive R_DS(on) temperature coefficient (normalized resistance increases with T_J) enables inherent current sharing. Parallel operation requires matched layout symmetry, shared gate drive, and individual source resistors (≤50 mΩ) to balance dynamic current distribution during switching transitions.

Is the body diode suitable for reverse recovery in synchronous rectification?

The body diode has t_rr = 82–120 ns and Q_rr = 180–270 nC, making it usable in ≤100 kHz synchronous rectifiers with moderate di/dt. For >200 kHz operation, an external Schottky diode is advised to avoid recovery-related switching loss and voltage overshoot.

IRF6201TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 27A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 2.45mOhm @ 27A, 4.5V

Vgs(th) (Max) @ Id:: 1.1V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 195 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 8555 pF @ 16 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF6201TRPBF FAQ

1.How can I place an order for IRF6201TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6201TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6201TRPBF reliable?

The price and inventory of IRF6201TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6201TRPBF is usually 5 days.

3.What payment methods are accepted for IRF6201TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6201TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6201TRPBF?

IRF6201TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6201TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6201TRPBF?

For technical support, including IRF6201TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6201TRPBF requirements.

6.How does Aetrix verify that IRF6201TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF6201TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6201TRPBF meets industry standards.

7.What is the process for return or replacement of IRF6201TRPBF?

All IRF6201TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6201TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6201TRPBF part is unused and in its original packaging.

Return procedure for IRF6201TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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