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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6215L

Name: IRF6215L
Brand: Infineon Technologies
SKU: IRF6215L
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6215L

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRF6215L.pdf

Description:: MOSFET P-CH 150V 13A TO262

Quantity:: RFQ Add To RFQ list

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Inventory:5,174

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Product details

Overview

IRF6215L from Infineon Technologies is a P-channel enhancement-mode MOSFET in TO-262 (I2PAK) package, rated for -150 V V_DS, 12 A I_D (T_C = 25°C), R_DS(on) ≤ 0.28 Ω at V_GS = -10 V, and featuring 100% avalanche-rated ruggedness. It serves as a high-side load switch in industrial power supplies and DC motor control circuits.

For engineers reviewing the IRF6215L datasheet, IRF6215L pinout, IRF6215L application, or IRF6215L equivalent, key selection criteria include its negative gate threshold (V_GS(th) = -2.0 to -4.0 V), low gate charge (Q_g = 42 nC), and suitability for hard-switched 100–150 V DC bus topologies requiring robust short-circuit immunity.

Technical Context

This MOSFET employs planar stripe silicon technology with optimized cell pitch and thick field oxide for stable operation under repetitive unclamped inductive switching (UIS). Its gate oxide thickness and doping profile yield tight V_GS(th) distribution and low transconductance variation across temperature.

The device integrates a fast intrinsic body diode with t_rr = 120 ns and Q_rr = 320 nC, enabling use in synchronous rectification and freewheeling paths without external diode supplementation in moderate-frequency (<100 kHz) converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	–150 V: Maximum drain-source blocking voltage in reverse-biased configuration; supports 120 V nominal DC bus with 25% safety margin.
I_D @ T_C = 25°C	–12 A: Continuous DC current capability at case temperature 25°C; derates to –7.2 A at 100°C.
R_DS(on) @ V_GS = –10 V	≤ 0.28 Ω: On-resistance determines conduction loss; yields <0.4 W dissipation at 12 A.
Q_g	42 nC: Total gate charge defines drive strength requirement; compatible with standard ±12 V gate drivers.
V_GS(th)	–2.0 to –4.0 V: Gate threshold range ensures reliable turn-on with logic-level negative gate drive.
E_AS	320 mJ: Single-pulse avalanche energy rating confirms ruggedness in inductive load switching.

Pinout & Package

Package: TO-262 (I2PAK), surface-mount variant of TO-220 with isolated tab, 3-pin single-ended configuration, RoHS-compliant lead-free finish.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path collector	Electrically connected to metal tab; requires insulated mounting when referenced to non-ground potential.
Source	Reference node for gate control	Common return for load current and gate drive reference; ties to system ground or negative rail.
Gate	Control electrode	High-impedance input requiring <42 nC charge for full enhancement; sensitive to ESD above ±20 V.

Key Features

Feature	Design Value
100% UIS tested	Guarantees survival under worst-case inductive turn-off stress without external snubbers.
Fast body diode	t_rr = 120 ns enables efficient freewheeling in buck and half-bridge topologies up to 100 kHz.
Low Q_g/R_DS(on) ratio	150 nC/Ω figure-of-merit balances switching speed and conduction loss in medium-power SMPS.
Lead-free and RoHS compliant	Meets EU Directive 2011/65/EU; Pb-free terminations withstand peak reflow temperatures up to 260°C.

Applications

Industrial DC Motor Control

High-Side Load Switch

Use Scenario: Bidirectional 120 V DC brushed motor drive with regenerative braking.

IC Role / Device Role / Timing Role: High-side P-channel switch controlling motor phase voltage; operates in linear and saturated modes during PWM commutation.

Use Value: Avalanche rating absorbs back-EMF spikes during abrupt current interruption; R_DS(on) ≤ 0.28 Ω limits thermal rise at 12 A continuous.

Use Scenario: Power sequencing in programmable logic controller (PLC) I/O modules.

IC Role / Device Role / Timing Role: Controlled enable/disconnect of 24–120 V auxiliary rails; driven by microcontroller GPIO via level-shifting circuit.

Use Value: V_GS(th) range ensures clean turn-on with –5 V logic drive; low leakage (<1 μA) prevents standby power waste.

DC-DC Converter Synchronous Rectifier

Uninterruptible Power Supply (UPS) Transfer Switch

Use Scenario: Secondary-side rectification in 120 V input isolated flyback converter delivering 24 V/5 A.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; body diode conducts during dead-time, MOSFET conducts during active period.

Use Value: Body diode t_rr = 120 ns minimizes reverse recovery loss; Q_rr = 320 nC reduces voltage overshoot during commutation.

Use Scenario: Automatic transfer between utility and battery-backed DC bus in 48 V telecom UPS.

IC Role / Device Role / Timing Role: Solid-state transfer switch isolating faulted source; operated in on/off mode with <10 ms response.

Use Value: –150 V V_DS rating accommodates 48 V nominal plus surge transients; 320 mJ E_AS handles inrush current surges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12PF06	V_DS = –60 V, R_DS(on) = 0.22 Ω, Q_g = 35 nC	Limited to ≤60 V systems; lower gate charge improves switching efficiency but insufficient for 120 V bus.	Select only for sub-60 V designs where lower conduction loss outweighs voltage margin loss.
IXTP12P15X	V_DS = –150 V, R_DS(on) = 0.32 Ω, Q_g = 38 nC, TO-220 package	Same voltage rating but higher R_DS(on); TO-220 requires through-hole assembly and lacks isolated tab.	Prefer for legacy through-hole layouts or where thermal interface to heatsink is simpler than SMT mounting.

Compared with STP12PF06 and IXTP12P15X, the IRF6215L uniquely combines 150 V rating, 0.28 Ω on-resistance, and TO-262 isolation-enabling compact, surface-mounted high-side switches in 100–120 V industrial power systems without compromising avalanche ruggedness or thermal management.

Availability

IRF6215L is available at Aetrix Electronics and suitable for industrial motor drives, PLC power sequencing, DC-DC synchronous rectification, and UPS transfer switching requiring stable component supply and long-term manufacturability.

Supply support for IRF6215L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The StrongIRFET™ product line delivers high-voltage, high-current discrete MOSFETs engineered for ruggedness, low conduction loss, and reliable operation in industrial power conversion and motor control.

FAQ

What is the maximum junction temperature for continuous operation of the IRF6215L?

The IRF6215L has a maximum rated junction temperature (T_J) of 175°C. Derating curves in the official datasheet specify that continuous drain current must be reduced linearly from –12 A at T_C = 25°C to –4.8 A at T_C = 100°C. Thermal design must ensure case-to-ambient resistance remains below 12.5°C/W for full-rated operation at 25°C ambient.

Can the IRF6215L be used in parallel configurations?

Yes, the IRF6215L supports paralleling due to its positive temperature coefficient of R_DS(on), which promotes current sharing. However, layout symmetry-matched gate drive impedance, equal trace lengths, and shared heatsinking-is required. Gate resistors ≥10 Ω per device are recommended to damp oscillation and ensure simultaneous turn-on.

Does the IRF6215L require a gate driver IC, or can it be driven directly from a microcontroller?

A microcontroller GPIO cannot drive the IRF6215L directly due to its –10 V gate drive requirement and 42 nC gate charge. A dedicated negative-voltage gate driver (e.g., TC4427 configured for inverting output) or level-shifting circuit generating –12 V is mandatory to achieve full enhancement and minimize switching losses.

Is the IRF6215L suitable for use in automotive applications?

No-the IRF6215L is not AEC-Q101 qualified and lacks automotive-grade screening, temperature cycling validation, or failure-in-time (FIT) data. While its 175°C T_J rating exceeds typical under-hood requirements, Infineon does not certify this part for automotive use; AEC-Q101-qualified alternatives like IPP60R190P7XKSA1 should be selected instead.

IRF6215L Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 290mOhm @ 6.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 66 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 860 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

IRF6215L FAQ

1.How can I place an order for IRF6215L through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6215L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6215L reliable?

The price and inventory of IRF6215L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6215L is usually 5 days.

3.What payment methods are accepted for IRF6215L?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6215L transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6215L?

IRF6215L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6215L order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6215L?

For technical support, including IRF6215L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6215L requirements.

6.How does Aetrix verify that IRF6215L is sourced from the original manufacturer or authorized distributors?

All IRF6215L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6215L meets industry standards.

7.What is the process for return or replacement of IRF6215L?

All IRF6215L units undergo pre-shipment inspection (PSI). If there is an issue with IRF6215L, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6215L part is unused and in its original packaging.

Return procedure for IRF6215L:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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