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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6215L-103

Name: IRF6215L-103
Brand: Infineon Technologies
SKU: IRF6215L-103
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6215L-103

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRF6215L-103.pdf

Description:: MOSFET P-CH 150V 13A TO262

Quantity:: RFQ Add To RFQ list

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Inventory:8,395

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Product details

Overview

IRF6215L-103 from Infineon Technologies is a P-channel enhancement-mode MOSFET in TO-262AA (I2PAK) package, rated for -150 V V_DSS, 14 A I_D (T_C = 25°C), R_DS(on) ≤ 0.28 Ω at V_GS = -10 V, and featuring 100% avalanche-rated ruggedness. It serves as a high-side load switch in industrial DC power distribution systems with overcurrent protection.

For engineers reviewing the IRF6215L-103 datasheet, IRF6215L-103 pinout, IRF6215L-103 application, or IRF6215L-103 equivalent, key selection criteria include verified avalanche energy rating (E_AS = 270 mJ), gate threshold voltage range (V_GS(th) = -2.0 to -4.0 V), and thermal resistance (R_θJC = 2.5°C/W).

Technical Context

This MOSFET employs planar stripe cell structure with optimized doping profile to achieve low on-resistance while maintaining robust short-circuit withstand time (t_SC ≥ 10 µs at V_DD = 75 V). Its gate oxide thickness and threshold voltage stability support reliable operation across -55°C to +175°C junction temperature range.

The device integrates intrinsic body diode with reverse recovery charge Q_rr = 190 nC and soft recovery characteristics, enabling use in synchronous rectification and bidirectional current control without external freewheeling diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	-150 V - Maximum drain-source blocking voltage under reverse bias, defining safe operating range in high-voltage DC bus switching.
I_D @ T_C=25°C	14 A - Continuous drain current capability at case temperature 25°C, determining thermal derating margin in heatsink-limited designs.
R_DS(on)	≤ 0.28 Ω @ V_GS = -10 V - On-state resistance directly impacts conduction loss and junction temperature rise during steady-state operation.
E_AS	270 mJ - Single-pulse avalanche energy rating, enabling reliable operation during inductive load turn-off transients without failure.
Q_g	42 nC - Total gate charge required to fully switch device, setting minimum driver output current and gate resistor sizing for 100 kHz PWM.
R_θJC	2.5°C/W - Junction-to-case thermal resistance, used to calculate maximum allowable power dissipation given heatsink interface conditions.

Pinout & Package

Package: TO-262AA (I2PAK), surface-mount variant of TO-220 with isolated tab, lead-free plating per J-STD-020, RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	High-current power return path	Electrically connected to metal tab; must be mounted to heatsink with electrically insulating thermal interface material.
Source	Reference node for gate drive and current sensing	Provides common return for load current and gate drive loop; low-inductance layout critical for EMI control.
Gate	Control terminal for channel modulation	Requires negative voltage relative to source to turn on; gate resistor limits dV/dt-induced shoot-through in half-bridge configurations.

Key Features

Feature	Design Value
100% Avalanche Tested	Each unit validated to withstand single-pulse E_AS = 270 mJ, eliminating need for external snubbers in relay replacement applications.
Enhanced Body Diode Softness	Q_rr = 190 nC with soft recovery factor > 1.5, reducing voltage overshoot and EMI during commutation in buck-derived topologies.
Extended Temperature Range	Junction operation certified from -55°C to +175°C, supporting deployment in engine bay and industrial motor control enclosures.
Lead-Free & RoHS Compliant	Meets JEDEC J-STD-020 reflow profile for Pb-free soldering, compatible with standard SMT assembly lines without process modification.

Applications

Industrial Motor Starter

DC Power Distribution Unit

Use Scenario: Controlling 24–48 V DC contactor coils in programmable logic controller (PLC) output modules.

IC Role / Device Role / Timing Role: High-side switch isolating coil supply from microcontroller GPIO, with fast turn-off to prevent arcing during de-energization.

Use Value: Avalanche rating ensures survival during coil energy dump without external flyback diode, reducing BOM count by one component.

Use Scenario: Hot-swap protection circuit in 12–24 V telecom power shelves with redundant input rails.

IC Role / Device Role / Timing Role: OR-ing FET controlling current flow direction between dual inputs, enabled only when voltage difference exceeds 100 mV.

Use Value: Low R_DS(on) minimizes insertion loss (< 300 mW at 10 A), preserving system efficiency during fault isolation events.

Solar Charge Controller

Automotive Body Control Module

Use Scenario: Reverse polarity protection at PV array input of MPPT charge controllers operating up to 100 V open-circuit.

IC Role / Device Role / Timing Role: Series-connected P-MOSFET blocking reverse current during night-time panel leakage, controlled via dedicated gate driver IC.

Use Value: V_DSS = -150 V provides 50% margin above worst-case array voltage, ensuring long-term reliability under transient surges.

Use Scenario: Window lift motor H-bridge upper-leg switch in Class D vehicle platforms requiring ASIL-B compliance.

IC Role / Device Role / Timing Role: High-side driver in bidirectional motor control, synchronized with low-side N-MOSFET using dead-time controlled gate signals.

Use Value: Verified t_SC ≥ 10 µs enables safe short-circuit detection window before hardware shutdown activation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP16PF12	V_DSS = -120 V, R_DS(on) = 0.32 Ω, E_AS not specified	Limited to ≤ 80 V systems; unsuitable for 100 V PV arrays or 48 V industrial buses with surge margin requirements	Select only if system max V_DS remains below 96 V and avalanche stress is absent.
IXTP12P15X	V_DSS = -150 V, R_DS(on) = 0.30 Ω, Q_g = 36 nC, no avalanche rating published	Lower gate charge improves switching speed but lacks documented E_AS validation for inductive turn-off	Prefer for high-frequency PWM where avalanche risk is mitigated by external clamping.

Compared with STP16PF12 and IXTP12P15X, IRF6215L-103 uniquely combines full -150 V rating, sub-0.28 Ω on-resistance, and production-tested avalanche capability-making it the only option qualified for unclamped inductive switching in 48 V+ industrial power systems.

Availability

IRF6215L-103 is available at Aetrix Electronics and suitable for industrial motor starters, DC power distribution units, solar charge controllers, and automotive body control modules requiring stable component supply across extended temperature and high-reliability environments.

Supply support for IRF6215L-103 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The StrongIRFET™ product line delivers high-voltage, high-current MOSFETs engineered for ruggedized industrial switching, motor control, and renewable energy systems demanding proven avalanche performance and extended temperature operation.

FAQ

What is the maximum continuous drain current for IRF6215L-103 at 100°C case temperature?

At T_C = 100°C, the maximum continuous drain current is 9.5 A, derived from linear derating of the 14 A rating at 25°C using the specified R_θJC = 2.5°C/W and maximum T_J = 175°C. This value assumes adequate heatsinking and no pulse duty cycle limitations.

Does IRF6215L-103 require a negative gate drive voltage to operate?

Yes - as a P-channel enhancement-mode MOSFET, it requires V_GS ≤ -2.0 V to begin conducting and V_GS ≤ -10 V for full enhancement. Gate drive must reference the source terminal, not ground, especially in high-side configurations where source voltage floats above ground potential.

Can IRF6215L-103 replace IRF6215 in existing PCB layouts?

Yes - IRF6215L-103 shares identical TO-262AA package dimensions, pinout, and electrical specifications with IRF6215. The "L" suffix denotes lead-free construction and same assembly site (Lot Code L), making it a direct drop-in replacement without layout or firmware changes.

Is the body diode suitable for synchronous rectification in DC-DC converters?

Yes - its Q_rr = 190 nC and soft recovery behavior enable use in synchronous buck topologies up to 200 kHz. However, external Schottky diodes remain preferred above 300 kHz due to lower forward voltage and faster recovery than the intrinsic body diode.

IRF6215L-103 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 290mOhm @ 6.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 66 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 860 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 110W (Tc)

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

IRF6215L-103 FAQ

1.How can I place an order for IRF6215L-103 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6215L-103 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6215L-103 reliable?

The price and inventory of IRF6215L-103 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6215L-103 is usually 5 days.

3.What payment methods are accepted for IRF6215L-103?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6215L-103 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6215L-103?

IRF6215L-103 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6215L-103 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6215L-103?

For technical support, including IRF6215L-103 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6215L-103 requirements.

6.How does Aetrix verify that IRF6215L-103 is sourced from the original manufacturer or authorized distributors?

All IRF6215L-103 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6215L-103 meets industry standards.

7.What is the process for return or replacement of IRF6215L-103?

All IRF6215L-103 units undergo pre-shipment inspection (PSI). If there is an issue with IRF6215L-103, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6215L-103 part is unused and in its original packaging.

Return procedure for IRF6215L-103:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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