Infineon Technologies IRF6215PBF

Overview

IRF6215PBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, rated for -150 V V(BR)DSS, -13 A continuous drain current at 25°C, and 0.29 Ω RDS(on) at VGS = -10 V and TJ = 25°C. It features fully avalanche-rated ruggedness (310 mJ EAS), fast switching (tr = 36 ns, tf = 37 ns), and optimized thermal performance (RθJC = 1.4 °C/W) for high-efficiency DC-DC conversion and motor control.

For engineers reviewing the IRF6215PBF datasheet, IRF6215PBF pinout, IRF6215PBF application, or IRF6215PBF equivalent, key selection criteria include its negative gate threshold (-2.0 to -4.0 V), low gate charge (66 nC total), body diode forward voltage (-1.6 V at -6.6 A), and suitability for high-side switching in industrial power supplies and battery protection circuits.

Technical Context

This P-channel MOSFET operates with negative gate drive relative to source, enabling high-side switch configuration without level-shifting circuitry. Its -150 V breakdown voltage supports 120 V bus applications with margin, while the 0.29 Ω on-resistance at -10 V gate drive ensures low conduction loss in 12–48 V systems.

The device integrates a fast, low-Qrr body diode (Qrr = 1.2–1.7 µC, trr = 160–240 ns) and exhibits robust dv/dt immunity (-5.0 V/ns peak diode recovery). Its fully avalanche-rated design (IAS = -6.6 A, EAS = 310 mJ) allows reliable operation under unclamped inductive switching stress common in relay drivers and H-bridge freewheeling paths.

Key Specifications

Pinout & Package

IRF6215PBF uses the industry-standard TO-220AB package with isolated tab (drain-connected), offering low thermal resistance and mechanical compatibility with universal heatsinks. Lead assignments: Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source, Pin 4 = Drain (dual-drain configuration).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage power MOSFET applications.

Compared with STP14PF55 and IXTP10P50P, IRF6215PBF uniquely balances -150 V capability, 0.29 Ω on-resistance, and TO-220AB thermal performance-making it optimal for 24–48 V industrial power stages requiring both transient robustness and efficiency.

Availability

IRF6215PBF is available at Aetrix Electronics and suitable for industrial motor control, telecom DC-DC converters, and battery protection circuits requiring stable component supply and long-term lifecycle support.

Supply support for IRF6215PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues to manufacture and support the HEXFET® portfolio, a leader in power MOSFET innovation since the 1970s.

The IRF6215PBF belongs to the Fifth Generation HEXFET® family, engineered specifically for high-reliability industrial power conversion where avalanche ruggedness, low gate charge, and thermal stability are mandatory.

FAQ

What is the maximum safe operating area (SOA) limitation for IRF6215PBF at 100°C case temperature?

At TC = 100°C, the SOA is limited by RDS(on) to approximately 4.5 A at -75 V VDS in the 10 ms region, per Figure 8. This reflects the derated current due to thermal constraints-not electrical breakdown-and assumes adequate heatsinking to maintain junction temperature below 175°C.

Can IRF6215PBF be used in zero-voltage switching (ZVS) resonant topologies?

Yes-its low Crss (130 pF) and well-controlled Qgd (35 nC) enable predictable Miller plateau timing, supporting ZVS implementation in LLC resonant converters. The -150 V rating accommodates peak resonant voltages up to -120 V with margin, and the body diode's soft recovery minimizes ringing.

Is the TO-220AB package electrically isolated between drain and mounting tab?

No-the drain (pins 2 and 4) and metal tab are internally connected and electrically common. The tab must be insulated from the heatsink if the drain node is not at chassis ground; use mica or polymer insulator kits with thermal grease for safe mounting.

How does gate threshold voltage variation affect drive circuit design?

With VGS(th) ranging from -2.0 V to -4.0 V, gate drive must ensure VGS ≤ -10 V for full enhancement across temperature and process variation. A -12 V rail or dedicated negative bias generator is recommended-especially at TJ = 150°C where RDS(on) rises to 0.58 Ω-to guarantee consistent on-state performance and avoid linear-mode overheating.