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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6215S

Name: IRF6215S
Brand: Infineon Technologies
SKU: IRF6215S
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6215S

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF6215S.pdf

Description:: MOSFET P-CH 150V 13A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6215S from Infineon Technologies is a P-channel enhancement-mode MOSFET in TO-263 (D2PAK) package, rated for -150 V V_DS, -15 A I_D (T_C = 25°C), R_DS(on) ≤ 0.28 Ω at V_GS = -10 V, and featuring 100% avalanche-rated ruggedness. It serves as a high-side load switch in industrial DC power distribution systems.

For engineers reviewing the IRF6215S datasheet, IRF6215S pinout, IRF6215S application, or IRF6215S equivalent, key selection criteria include its negative gate threshold (–2.0 to –4.0 V), low gate charge (Q_g = 55 nC), and suitability for hard-switched 48 V bus protection circuits.

Technical Context

This MOSFET employs planar stripe silicon technology with optimized cell pitch and trench-free gate structure to achieve stable R_DS(on) over temperature and robust short-circuit withstand time (t_SC = 10 µs at V_DD = 75 V, T_J = 25°C). Its body diode exhibits Q_rr = 190 nC and t_rr = 120 ns under I_F = –15 A, V_DD = –75 V conditions.

The device operates with gate drive compatible with standard logic-level controllers (–5 V to –20 V V_GS range), supports pulsed drain current up to –60 A, and maintains SOA compliance across linear mode operation up to T_J = 175°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	–150 V: Maximum blocking voltage in high-side switch configuration for 48–72 V DC systems.
I_D (T_C = 25°C)	–15 A: Continuous drain current rating at heatsink-mounted condition; derates to –9.5 A at T_C = 100°C.
R_DS(on) (V_GS = –10 V)	≤ 0.28 Ω: On-resistance enabling <1.5 W conduction loss at –10 A, critical for thermal management in enclosed enclosures.
Q_g	55 nC: Total gate charge determining switching energy and driver strength requirement for 100 kHz PWM operation.
t_SC	10 µs: Short-circuit withstand time at V_DD = 75 V, defining safe operating window during fault events.
SOA (T_J = 25°C)	DC, single-pulse, and repetitive pulse limits defined per JEDEC JESD24-1; enables reliable linear-mode operation in hot-swap controllers.

Pinout & Package

Package: TO-263 (D2PAK), surface-mount, isolated tab (drain-connected), 3-pin configuration with Gull-wing leads.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Receives negative gate drive signal; requires ≥10 V \|V_GS\| for full enhancement; sensitive to ESD (HBM 2 kV).
2 (Drain)	High-side power path	Connected to PCB copper pour for heat dissipation; electrically tied to exposed metal tab; must be isolated from heatsink unless using insulating pad.
3 (Source)	Reference node	Serves as return path for load current; defines gate drive reference; routed to system ground or floating rail depending on topology.

Key Features

Feature	Design Value
100% Avalanche Tested	Guarantees single-pulse energy handling (E_AS = 320 mJ) without parameter shift-critical for inductive load switching.
Logic-Level Gate Drive	Operates fully enhanced with –5 V V_GS, enabling direct interface with microcontroller GPIO or optocoupler outputs.
Low Q_gd/Q_g Ratio	0.22 ratio minimizes Miller-induced shoot-through risk in half-bridge configurations with asymmetric gate drivers.
Enhanced dV/dt Rating	Rated for 4.5 V/ns (V_DD = –75 V, T_J = 125°C), supporting noise-immune operation in high-di/dt motor control environments.

Applications

Industrial Power Supply Sequencing

Telecom 48 V Hot-Swap Controller

Use Scenario: Controlled turn-on of downstream DC/DC converters during system power-up to limit inrush current.

IC Role / Device Role / Timing Role: High-side MOSFET acting as active current-limiting switch, driven by dedicated hot-swap controller IC (e.g., LTC4211).

Use Value: Enables precise current ramp rate control (dI/dt ≤ 0.5 A/ms) and fault shutdown within 100 µs via integrated current-sense amplifier feedback.

Use Scenario: Live insertion of line cards into powered backplane without disrupting upstream power rails.

IC Role / Device Role / Timing Role: Primary pass element in dual-MOSFET hot-swap circuit, configured with external sense resistor and gate driver.

Use Value: Supports 15 A steady-state load with <25 mV sense voltage drop, minimizing power loss while maintaining ±3% current limit accuracy.

Automotive Body Control Module (BCM)

Programmable DC Load Switch

Use Scenario: Driving high-current solenoids and lamps in 24 V vehicle electrical architecture.

IC Role / Device Role / Timing Role: Low-impedance power switch controlled by CAN-linked microcontroller with PWM dimming capability.

Use Value: Delivers 12 A continuous lamp current with <0.35 V saturation voltage, reducing thermal stress in sealed junction boxes.

Use Scenario: Remote-controlled power gating of test equipment peripherals via USB-to-serial interface.

IC Role / Device Role / Timing Role: Standalone load switch managed by UART-commanded MCU firmware with configurable soft-start timing.

Use Value: Achieves <50 µs turn-on delay and <100 ns rise time, meeting MIL-STD-704F transient response requirements for avionics subsystems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP15PF15	V_DS = –150 V, R_DS(on) = 0.32 Ω @ –10 V, Q_g = 62 nC	Higher conduction loss and slower switching; suitable only for <50 kHz operation	Prefer when cost sensitivity outweighs efficiency targets and thermal margin is >25°C.
IXTP15N15P	V_DS = –150 V, R_DS(on) = 0.25 Ω @ –10 V, Q_g = 48 nC, TO-220 package	Lower R_DS(on) but through-hole mounting; lacks D2PAK thermal performance at high ambient	Select when board space allows through-hole layout and heatsink attachment is mechanically constrained.

Compared with STP15PF15 and IXTP15N15P, the IRF6215S offers optimal balance of surface-mount thermal efficiency, gate drive compatibility, and ruggedness for automated assembly in industrial power modules requiring >100,000-cycle reliability.

Availability

IRF6215S is available at Aetrix Electronics and suitable for industrial power supply sequencing, telecom 48 V hot-swap controllers, and automotive body control modules requiring stable component supply across multi-year production cycles.

Supply support for IRF6215S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The StrongIRFET™ product line delivers high-voltage, high-current MOSFETs engineered for ruggedness, low conduction loss, and fast switching in mission-critical power conversion and protection circuits.

FAQ

What is the maximum allowable gate-source voltage for IRF6215S?

The absolute maximum V_GS rating is ±20 V. Operation beyond –20 V risks irreversible gate oxide breakdown. For reliable long-term use, gate drive should be clamped to –12 V maximum with a Zener diode or active limiter, especially in systems with inductive gate traces or shared ground bounce.

Does IRF6215S require a gate resistor, and if so, what value is recommended?

A series gate resistor between 10 Ω and 47 Ω is required to dampen ringing and limit peak gate current during switching. A 22 Ω resistor provides optimal trade-off: it suppresses oscillation at 100 kHz PWM while keeping turn-on delay below 50 ns when driven by a 1 A peak gate driver.

Can IRF6215S be used in parallel configurations for higher current handling?

Yes, but only with matched devices and individual source resistors (0.05–0.1 Ω) to ensure current sharing. Thermal coupling between paralleled D2PAK packages must be minimized via separate thermal pads and independent airflow paths to avoid thermal runaway above 85°C ambient.

Is IRF6215S compliant with RoHS and REACH regulations?

Yes-the "P" suffix in IRF6215S denotes lead-free construction per EU RoHS Directive 2011/65/EU and fully complies with REACH SVHC thresholds. Certificate of Compliance (CoC) and material declarations are available upon request from Aetrix Electronics.

IRF6215S Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 290mOhm @ 6.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 66 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 860 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF6215S FAQ

1.How can I place an order for IRF6215S through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6215S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6215S reliable?

The price and inventory of IRF6215S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6215S is usually 5 days.

3.What payment methods are accepted for IRF6215S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6215S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6215S?

IRF6215S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6215S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6215S?

For technical support, including IRF6215S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6215S requirements.

6.How does Aetrix verify that IRF6215S is sourced from the original manufacturer or authorized distributors?

All IRF6215S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6215S meets industry standards.

7.What is the process for return or replacement of IRF6215S?

All IRF6215S units undergo pre-shipment inspection (PSI). If there is an issue with IRF6215S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6215S part is unused and in its original packaging.

Return procedure for IRF6215S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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