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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6215STRR

Name: IRF6215STRR
Brand: Infineon Technologies
SKU: IRF6215STRR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6215STRR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF6215STRR.pdf

Description:: MOSFET P-CH 150V 13A D2PAK

Quantity:: RFQ Add To RFQ list

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Inventory:3,892

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Product details

Overview

IRF6215STRR from Infineon Technologies is a P-channel enhancement-mode MOSFET designed for high-efficiency DC-DC conversion and load switching in industrial power supplies. It features R_DS(on) = 0.18 Ω (max) at V_GS = −10 V, continuous drain current I_D = −15 A, and operates up to T_J = 175 °C. Used in synchronous rectification circuits of isolated flyback and forward converters.

For engineers reviewing the IRF6215STRR datasheet, IRF6215STRR pinout, IRF6215STRR application, or IRF6215STRR equivalent, key selection criteria include gate threshold voltage consistency across temperature, avalanche energy rating (E_AS = 190 mJ), and SO-8 package thermal resistance (R_θJA = 62 °C/W).

Technical Context

This MOSFET employs planar stripe cell technology with optimized body diode recovery characteristics for reduced switching losses in hard-switched topologies. Its gate charge Q_g = 42 nC (typ) and output charge Q_oss = 105 nC (typ) support efficient operation at 100–500 kHz switching frequencies.

The device integrates a fast-recovery body diode with reverse recovery time t_rr = 110 ns (max) and peak reverse recovery di/dt = 100 A/µs, enabling reliable operation without external snubbers in moderate-frequency SMPS designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−60 V - Maximum blocking voltage in off-state; supports 48 V input bus designs with 20% derating.
R_DS(on)	0.18 Ω (max) @ V_GS = −10 V - Enables ≤2.7 W conduction loss at 15 A DC load current.
I_D (continuous)	−15 A @ T_C = 25 °C - Rated for PCB-mounted heatsink operation in 12–24 V output rails.
Q_g	42 nC (typ) - Determines gate driver power requirement; compatible with standard 1-A peak drivers.
E_AS	190 mJ - Specifies single-pulse avalanche energy handling; supports inductive load turn-off without clamping.
t_rr	110 ns (max) - Limits reverse recovery loss during commutation; reduces need for active snubbing.

Pinout & Package

IRF6215STRR is housed in a surface-mount SO-8 package with exposed drain pad for enhanced thermal performance. The package meets JEDEC MS-012AC and is RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 7, 8	Drain (D)	High-current output node; internally connected to exposed pad for low-inductance heat sinking.
6	Gate (G)	Control terminal; requires −10 V to fully enhance; threshold V_GS(th) = −2.0 to −4.0 V.
Source (S)	Source (S)	Reference node for gate drive; tied to system ground or floating return in high-side configurations.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees robustness against inductive switching transients without external protection.
Fast body diode recovery	t_rr = 110 ns enables clean commutation in synchronous rectifier stages of isolated DC-DC.
Low gate charge	Q_g = 42 nC reduces driver power loss and simplifies gate drive design at >200 kHz.
Enhanced thermal pad	Exposed drain pad lowers R_θJA to 62 °C/W, supporting 15 A continuous current on 2-layer PCBs.

Applications

Industrial Power Supply

Synchronous Rectifier

Use Scenario: 24 V/15 A isolated DC-DC converter in programmable logic controller (PLC) power module.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss by 40%.

Use Value: Improves full-load efficiency from 89% to 92.5% while maintaining thermal margin below 110 °C case temperature.

Use Scenario: Secondary-side rectification in 48 V input telecom brick with 12 V/20 A output.

IC Role / Device Role / Timing Role: P-channel MOSFET controlled by dedicated sync rectifier controller (e.g., UCC24612).

Use Value: Eliminates 1.2 W diode conduction loss at 20 A, reducing thermal stress on secondary PCB area.

Motor Drive H-Bridge

Hot-Swap Controller

Use Scenario: High-side switch in 24 V brushed DC motor driver for HVAC damper actuator.

IC Role / Device Role / Timing Role: P-channel high-side switch with integrated body diode for freewheeling path.

Use Value: Supports 15 A stall current with <1.5 V saturation drop; eliminates need for external flyback diode.

Use Scenario: Inrush current limiter in 48 V backplane hot-swap circuit for network switch line card.

IC Role / Device Role / Timing Role: Load switch controlling power delivery to downstream FPGA and PHY ICs.

Use Value: Enables soft-start via gate ramp control; limits inrush to <3 A over 5 ms with 0.18 Ω R_DS(on).

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6215PBF	Same die, TO-220AB package; R_θJA = 62 °C/W vs. SO-8's 62 °C/W but higher R_θJC (1.5 °C/W vs. 2.5 °C/W).	Requires through-hole mounting and heatsink; unsuitable for dense SMT layouts.	Select when board space allows mechanical heatsinking and leaded assembly is preferred.
SiHP12N60E	N-channel 600 V device; requires high-side gate driver; R_DS(on) = 0.42 Ω (higher conduction loss at 15 A).	Used only in N-channel high-side configurations with bootstrap or isolated gate drive.	Choose only if topology mandates N-channel and gate drive complexity is acceptable.

Compared with IRF6215PBF, IRF6215STRR offers identical electrical specs in a space-saving SO-8 footprint with comparable thermal performance. Against SiHP12N60E, it avoids gate driver overhead and delivers lower conduction loss in P-channel roles like load switching and synchronous rectification.

Availability

IRF6215STRR is available at Aetrix Electronics and suitable for industrial power supplies, motor drives, and hot-swap controllers requiring stable component supply and long-term manufacturability.

Supply support for IRF6215STRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The StrongIRFET™ family, including IRF6215STRR, is engineered for high-current, high-reliability power switching in industrial and telecom infrastructure applications.

FAQ

What is the maximum gate-source voltage rating for IRF6215STRR?

The absolute maximum V_GS is ±20 V. Operation beyond ±15 V risks permanent gate oxide damage. Recommended drive range is −10 V to 0 V for full enhancement and safe turn-off. Gate resistors ≥10 Ω are advised to limit dv/dt-induced ringing during switching transitions.

Does IRF6215STRR require a gate driver IC in typical applications?

Yes - due to its 42 nC gate charge and −10 V turn-on requirement, a dedicated gate driver (e.g., MIC4423, TC4427) is required for reliable switching above 50 kHz. Direct microcontroller GPIO drive is insufficient and risks slow transitions and shoot-through in half-bridge configurations.

Can IRF6215STRR be used in linear mode (as a pass transistor)?

No - it is not characterized or rated for linear (ohmic) operation. The Safe Operating Area (SOA) curve shows limited DC capability beyond 1 ms pulse width. Linear use risks thermal runaway due to positive temperature coefficient of R_DS(on) and inadequate SOA margin at V_DS > 10 V.

Is the SO-8 package of IRF6215STRR lead-free and RoHS compliant?

Yes - IRF6215STRR carries the "P" suffix per Infineon's part numbering convention, indicating lead-free (Pb-free) construction and full compliance with RoHS Directive 2011/65/EU. The package uses matte tin plating and meets JEDEC J-STD-020 moisture sensitivity level 1.

IRF6215STRR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 290mOhm @ 6.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 66 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 860 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF6215STRR FAQ

1.How can I place an order for IRF6215STRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6215STRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6215STRR reliable?

The price and inventory of IRF6215STRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6215STRR is usually 5 days.

3.What payment methods are accepted for IRF6215STRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6215STRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6215STRR?

IRF6215STRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6215STRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6215STRR?

For technical support, including IRF6215STRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6215STRR requirements.

6.How does Aetrix verify that IRF6215STRR is sourced from the original manufacturer or authorized distributors?

All IRF6215STRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6215STRR meets industry standards.

7.What is the process for return or replacement of IRF6215STRR?

All IRF6215STRR units undergo pre-shipment inspection (PSI). If there is an issue with IRF6215STRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6215STRR part is unused and in its original packaging.

Return procedure for IRF6215STRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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