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Infineon Technologies IRF6215STRRPBF

Part No.:
IRF6215STRRPBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixIRF6215STRRPBF.pdf
Description:
MOSFET P-CH 150V 13A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,438

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Product details

Overview

IRF6215STRRPBF from Infineon Technologies is a P-channel enhancement-mode MOSFET rated for -150 V VDSS, 11 A ID (TC = 25°C), RDS(on) ≤ 0.28 Ω at VGS = -10 V, and features TO-263 (D²PAK) surface-mount package. It serves as a high-side load switch in industrial power supplies and DC motor control circuits.

For engineers reviewing the IRF6215STRRPBF datasheet, IRF6215STRRPBF pinout, IRF6215STRRPBF application, or IRF6215STRRPBF equivalent, key selection criteria include negative gate threshold voltage (-2.0 to -4.0 V), low gate charge (Qg = 40 nC), avalanche-rated ruggedness, and lead-free RoHS-compliant construction.

Technical Context

This MOSFET employs planar stripe cell technology with optimized doping profiles to achieve stable switching performance under repetitive unclamped inductive switching (UIS) stress. Its gate oxide thickness and channel geometry support reliable operation up to TJ = 175°C with controlled transconductance (gfs = 9.5 S).

The device uses a non-isolated D²PAK thermal pad design that requires direct PCB copper pour contact for effective junction-to-board heat transfer. Its body diode exhibits trr = 180 ns and Qrr = 1.1 µC under specified test conditions.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS-150 V - maximum drain-source blocking voltage in off-state, suitable for 120 VAC rectified bus applications
RDS(on)≤ 0.28 Ω @ VGS = -10 V - enables <1.5 W conduction loss at 11 A continuous drain current
Qg40 nC - determines gate driver power requirement and switching transition time
ID (TC = 25°C)11 A - continuous DC current rating with heatsink; derates to 7.2 A at TC = 100°C
VGS(th)-2.0 to -4.0 V - negative threshold ensures compatibility with standard logic-level gate drivers
EAS250 mJ - single-pulse avalanche energy rating supports inductive load turn-off without external snubbers

Pinout & Package

Package: TO-263 (D²PAK), surface-mount, isolated mounting tab (drain-connected), 3-pin configuration with gull-wing leads.

Pin/TerminalCircuit RoleDesign Meaning
1 (Gate)Control electrodeReceives negative voltage relative to source to turn on P-channel channel; requires <100 nF local decoupling
2 (Drain)High-side power terminalConnected to PCB thermal pad; carries full load current and must be routed over ≥2 oz copper pour
3 (Source)Reference nodeServes as return path for gate drive and load current; ties to system ground or floating rail in half-bridge topologies

Key Features

FeatureDesign Value
100% UIS testedEach unit validated for unclamped inductive switching at rated EAS, enabling robust motor drive designs
Lead-free and RoHS compliantMeets EU Directive 2011/65/EU; no exemption required for Pb, Cd, Hg, Cr⁶⁺, PBB, or PBDE
Fast body diodetrr = 180 ns enables synchronous rectification in buck converters without external Schottky
Low gate chargeQg = 40 nC reduces driver IC power dissipation and allows use of smaller gate resistors

Applications

Industrial Motor DrivesDC-DC Converter High-Side Switch

Use Scenario: Controlling brushed DC motors in factory automation systems with 48–120 VDC bus.

IC Role / Device Role / Timing Role: High-side P-channel MOSFET switch operating in hard-switched PWM mode at 20 kHz.

Use Value: Low RDS(on) minimizes I²R losses during 10 A peak load; avalanche rating handles back-EMF spikes.

Use Scenario: Step-down regulation in telecom power modules using synchronous buck topology.

IC Role / Device Role / Timing Role: Upper switch in N+P dual-MOSFET buck stage, driven by dedicated gate controller.

Use Value: Fast body diode eliminates need for external freewheeling diode; Qg enables efficient 500 kHz switching.

Uninterruptible Power SuppliesLED Constant-Current Driver

Use Scenario: Battery backup switching in line-interactive UPS units with 96 V nominal battery string.

IC Role / Device Role / Timing Role: Isolation switch between AC input rectifier and battery bank, operated in on/off mode.

Use Value: -150 V VDSS provides margin above 96 V battery + surge; low leakage (<1 µA) preserves standby runtime.

Use Scenario: Dimmable streetlight driver with analog current regulation via source degeneration.

IC Role / Device Role / Timing Role: Series-pass element controlling LED string current in linear constant-current mode.

Use Value: Stable RDS(on) tolerance (±20%) ensures consistent current setting across temperature and production lots.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP12PF06VDSS = -60 V, RDS(on) = 0.22 Ω, Qg = 32 nCLimited to ≤60 V systems; lower gate charge improves switching efficiency but insufficient for 120 V busSelect only if operating voltage stays below 48 V and fast switching dominates thermal concerns
IXTP12P15TVDSS = -150 V, RDS(on) = 0.32 Ω, Qg = 48 nC, TO-220 packageThrough-hole mounting; higher RDS(on) increases conduction loss; larger Qg demands stronger gate driverChoose when board space allows through-hole layout and thermal management uses heatsink rather than PCB copper

Compared with STP12PF06 and IXTP12P15T, the IRF6215STRRPBF uniquely balances 150 V rating, surface-mount D²PAK thermal performance, and moderate gate charge-making it optimal for compact, high-reliability industrial power stages where both voltage margin and PCB-area efficiency matter.

Availability

IRF6215STRRPBF is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converter high-side switches, and uninterruptible power supplies requiring stable component supply and long-term manufacturing continuity.

Supply support for IRF6215STRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The StrongIRFET™ product line delivers high-voltage, high-current MOSFETs engineered for rugged industrial switching applications including motor control, UPS, and solar inverters.

FAQ

What is the maximum junction temperature for IRF6215STRRPBF?

The absolute maximum junction temperature is 175°C. Operation above this limit risks permanent degradation of the silicon die and gate oxide integrity. Thermal design must ensure TJ remains within specification under worst-case ambient, power dissipation, and PCB copper area conditions.

Does IRF6215STRRPBF require a negative gate drive voltage?

Yes. As a P-channel MOSFET, it turns on when VGS is negative relative to the source. A typical gate drive range is -10 V to 0 V. Driving gate-to-ground while source is at positive potential achieves the required negative VGS; level-shifting circuitry may be needed in high-side configurations.

Can IRF6215STRRPBF replace an N-channel MOSFET in the same circuit?

No. It cannot directly substitute an N-channel device without redesigning gate drive polarity and topology. P-channel devices conduct with negative VGS, whereas N-channel devices require positive VGS. Swapping changes control logic, timing, and often requires new driver ICs or level shifters.

Is the drain pad electrically isolated in the TO-263 package?

No. The drain is internally connected to the exposed metal pad on the underside of the TO-263 (D²PAK) package. This pad must be soldered to a PCB copper pour tied to the drain net for both electrical connection and thermal conduction.

IRF6215STRRPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
150 V
Current - Continuous Drain (Id) @ 25°C:
13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
290mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
66 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
860 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
3.8W (Ta), 110W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

IRF6215STRRPBF FAQ

1.How can I place an order for IRF6215STRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6215STRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6215STRRPBF reliable?

The price and inventory of IRF6215STRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6215STRRPBF is usually 5 days.

3.What payment methods are accepted for IRF6215STRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6215STRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6215STRRPBF?

IRF6215STRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6215STRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6215STRRPBF?

For technical support, including IRF6215STRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6215STRRPBF requirements.

6.How does Aetrix verify that IRF6215STRRPBF is sourced from the original manufacturer or authorized distributors?

All IRF6215STRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6215STRRPBF meets industry standards.

7.What is the process for return or replacement of IRF6215STRRPBF?

All IRF6215STRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6215STRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6215STRRPBF part is unused and in its original packaging.

Return procedure for IRF6215STRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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