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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6216PBF

Name: IRF6216PBF
Brand: Infineon Technologies
SKU: IRF6216PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6216PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF6216PBF.pdf

Description:: MOSFET P-CH 150V 2.2A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:6,645

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Product details

Overview

IRF6216PBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET^® Power MOSFET in SO-8 package, rated for -150 V V_DS, 0.240 Ω R_DS(on) at -10 V V_GS, and -2.2 A continuous drain current at 25°C. It serves as a high-voltage reset switch in active-clamp forward DC-DC converters and synchronous rectification stages.

For engineers reviewing the IRF6216PBF datasheet, IRF6216PBF pinout, IRF6216PBF application, or IRF6216PBF equivalent, key selection criteria include its fully characterized C_oss (220 pF), low gate-to-drain charge (Q_gd = 15–23 nC), avalanche-rated operation (E_AS = 200 mJ), and lead-free SO-8 thermal performance (R_θJA = 50 °C/W).

Technical Context

This device operates as a high-side or floating high-voltage switch in isolated topologies, leveraging its negative threshold voltage (-3.0 to -5.0 V) and robust body diode (V_SD = -1.6 V, t_rr = 80–120 ns). Its SO-8 package integrates three drain pins and two source pins to reduce conduction losses and improve current sharing.

The MOSFET features fully characterized dynamic parameters including effective output capacitance (C_oss,eff = 220 pF), reverse transfer capacitance (C_rss = 53 pF), and gate charge profile optimized for fast switching with minimal Miller effect-critical for active-clamp reset timing control and reduced switching loss in 100–500 kHz DC-DC stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-150 V - Withstands full primary-side clamp voltage in active-clamp forward converters without breakdown.
R_DS(on)	0.240 Ω @ V_GS = -10 V - Enables <1.2 W conduction loss at -2.2 A, suitable for compact SMPS designs.
Q_gd	15–23 nC - Low Miller charge minimizes switching delay and improves controllability during hard-switched transitions.
E_AS	200 mJ - Supports unclamped inductive switching events in reset circuits without failure.
C_oss,eff	220 pF - Predictable output capacitance simplifies snubber design and soft-switching analysis.
t_rr	80–120 ns - Fast body diode recovery enables efficient synchronous rectification in flyback/forward topologies.
R_θJA	50 °C/W - Thermal resistance enables 2.5 W dissipation on standard PCBs without heatsink in ambient-limited applications.

Pinout & Package

IRF6216PBF uses an SO-8 surface-mount package per JEDEC MS-012AA, with exposed drain pads (pins 1, 2, 3, 5, 6, 7) and dual-source configuration (pins 4 and 8) to optimize current handling and thermal path.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 5, 6, 7	Drain (D)	Common high-voltage node tied to transformer primary clamp point; six parallel pins reduce trace inductance and power loss.
4, 8	Source (S)	Low-side return path for gate drive and load current; dual pins lower source inductance and improve switching stability.
Pin 8 (shared)	Gate (G)	Control input referenced to source; requires negative bias relative to source for turn-on in high-side configurations.

Key Features

Feature	Design Value
Lead-free SO-8 package	RoHS-compliant construction with enhanced thermal pad for improved PCB heat spreading and reliability in consumer-grade SMPS.
Fully characterized C_oss	220 pF effective output capacitance measured across full V_DS range (0 to -120 V), enabling accurate soft-switching timing prediction.
Low Q_gd/Q_g ratio	~45% (15–23 nC / 33–49 nC) - Reduces Miller-induced shoot-through risk and improves gate driver efficiency.
Avalanche-rated	200 mJ single-pulse energy rating validated per JEDEC JESD24-11, supporting robustness in unclamped inductive switching.
Body diode t_rr	80–120 ns with 310–460 nC Q_rr - Enables use as self-synchronous rectifier in low-duty-cycle clamp circuits.

Applications

Active-Clamp Forward Converter Reset Switch

Synchronous Rectifier in Flyback Converters

Use Scenario: High-voltage clamp switch in 30–100 W isolated forward converters operating at 200–500 kHz.

IC Role / Device Role / Timing Role: P-channel high-side switch controlling energy transfer from transformer primary to clamp capacitor during reset phase.

Use Value: Low R_DS(on) and controlled C_oss minimize clamp loss and enable precise reset timing, improving efficiency by >1.5% over discrete alternatives.

Use Scenario: Secondary-side rectification in universal-input 12–24 V flyback supplies for industrial sensors and IoT gateways.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode, driven by transformer-coupled gate signal referenced to secondary ground.

Use Value: Body diode t_rr < 120 ns and low V_SD (-1.6 V) reduce conduction loss and reverse recovery overshoot, increasing light-load efficiency by up to 3%.

Isolated Gate Driver Interface Stage

High-Voltage Level-Shifting Switch

Use Scenario: Isolation barrier interface between low-voltage controller IC and high-side power stage in half-bridge motor drivers.

IC Role / Device Role / Timing Role: Level-shifting buffer that translates logic-level gate signals to -150 V referenced outputs using bootstrap or transformer coupling.

Use Value: Negative V_GS(th) (-3.0 to -5.0 V) ensures reliable turn-off under noise, while low Q_gd prevents false triggering during dv/dt transients (>7.8 V/ns).

Use Scenario: Voltage-level translation for feedback or sensing circuits in telecom DC-DC modules with -48 V input rails.

IC Role / Device Role / Timing Role: High-impedance, high-voltage switch isolating analog feedback paths from noisy power domains.

Use Value: Ultra-low I_GSS (< ±100 nA) and high V_DS rating maintain signal integrity and prevent leakage-induced offset in precision voltage monitoring.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12PF06	V_DS = -60 V, R_DS(on) = 0.22 Ω, SO-8 - Lower voltage rating limits use to sub-60 V topologies.	Not suitable for active-clamp reset above 60 V; acceptable only in low-voltage flyback or buck-derived converters.	Select only when V_DS stress remains < 45 V; verify avalanche capability absent in datasheet.
IXTP10P50P	V_DS = -500 V, R_DS(on) = 0.85 Ω, TO-220 - Higher voltage but higher R_DS(on) and no SO-8 thermal optimization.	Requires heatsink and larger PCB area; unsuitable for space-constrained SMPS modules.	Choose for ultra-high-voltage applications where SO-8 footprint is not required and thermal mass can be added.

Compared with STP12PF06 and IXTP10P50P, IRF6216PBF uniquely balances -150 V rating, SO-8 thermal performance, and fully characterized dynamic capacitance-making it optimal for compact, high-frequency active-clamp and synchronous rectifier designs where layout density and predictable switching behavior are critical.

Availability

IRF6216PBF is available at Aetrix Electronics and suitable for active-clamp forward converters, synchronous rectifiers in flyback topologies, and high-voltage level-shifting interfaces requiring stable component supply and long-term production continuity.

Supply support for IRF6216PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues to develop, manufacture, and support its legacy power MOSFET portfolio with full documentation and application engineering resources.

The IRF6216PBF belongs to the HEXFET^® Power MOSFET product line, designed specifically for high-efficiency, high-frequency switched-mode power supplies in consumer and industrial applications where ruggedness, predictability, and thermal efficiency are essential.

FAQ

What is the maximum safe operating temperature for IRF6216PBF?

The junction temperature must not exceed +150°C, and storage temperature range is -55°C to +150°C. At T_A = 25°C, maximum continuous power dissipation is 2.5 W; derating is 0.02 W/°C above 25°C. Thermal resistance from junction to ambient is 50°C/W on standard FR-4 PCB with minimum copper area.

Can IRF6216PBF be used in linear mode operation?

No-this device is optimized for switching applications only. Its Safe Operating Area (SOA) curve shows limited linear-mode capability: at V_DS = -30 V, maximum pulsed current is -4.0 A for ≤100 µs. Continuous linear operation risks thermal runaway due to positive R_DS(on) temperature coefficient and insufficient SOA margin.

Does IRF6216PBF require a negative gate drive voltage?

Yes-its gate threshold voltage is -3.0 to -5.0 V, so turn-on requires V_GS ≤ -10 V. Standard 0–5 V logic cannot drive it directly. A level-shifting circuit or isolated gate driver generating negative bias relative to source is mandatory for reliable switching in high-side configurations.

How does the SO-8 package affect thermal performance compared to TO-220?

The SO-8 package provides lower thermal resistance to PCB (R_θJL = 20°C/W) than typical TO-220 devices, but higher R_θJA (50°C/W vs. ~62°C/W for TO-220 on 1-in² copper). Its advantage lies in superior current distribution via six drain pins and compatibility with automated assembly-ideal for dense, high-frequency SMPS layouts where board space and EMI control matter more than absolute peak power.

IRF6216PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 2.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 240mOhm @ 1.3A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 49 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1280 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF6216PBF FAQ

1.How can I place an order for IRF6216PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6216PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6216PBF reliable?

The price and inventory of IRF6216PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6216PBF is usually 5 days.

3.What payment methods are accepted for IRF6216PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6216PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6216PBF?

IRF6216PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6216PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6216PBF?

For technical support, including IRF6216PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6216PBF requirements.

6.How does Aetrix verify that IRF6216PBF is sourced from the original manufacturer or authorized distributors?

All IRF6216PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6216PBF meets industry standards.

7.What is the process for return or replacement of IRF6216PBF?

All IRF6216PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6216PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6216PBF part is unused and in its original packaging.

Return procedure for IRF6216PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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