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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6217TRPBF

Name: IRF6217TRPBF
Brand: Infineon Technologies
SKU: IRF6217TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6217TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF6217TRPBF.pdf

Description:: MOSFET P-CH 150V 700MA 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6217TRPBF from Infineon Technologies (acquired International Rectifier) is a P-channel enhancement-mode HEXFET^® Power MOSFET in SO-8 package, rated for -150 V V_BRDSS, 2.4 Ω R_DS(on) at V_GS = -10 V and I_D = -0.42 A, with -0.7 A continuous drain current at 25°C. It serves as a reset switch in active-clamp forward DC-DC converters.

For engineers reviewing the IRF6217TRPBF datasheet, IRF6217TRPBF pinout, IRF6217TRPBF application, or IRF6217TRPBF equivalent, key selection criteria include its negative threshold voltage (-3.0 to -5.0 V), low gate charge (6.0–9.0 nC total), avalanche-rated operation (15 mJ E_AS), and SO-8 thermal performance (R_θJA = 50 °C/W).

Technical Context

This device operates as a high-side synchronous rectifier or active-clamp reset switch in isolated DC-DC topologies. Its P-channel architecture enables simple gate drive with referenced-to-drain configuration, and its fully characterized C_oss (15–150 pF, voltage-dependent) and C_rss (10 pF) support accurate snubberless design in resonant and quasi-resonant converters.

The MOSFET features robust unclamped inductive switching capability (I_AR = -1.4 A, E_AS = 15 mJ), body diode with V_SD = -1.6 V at I_S = -0.42 A, and specified dv/dt immunity of 4.5 V/ns - critical for noise-immune operation in high-frequency SMPS designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BRDSS	-150 V - Withstands up to -150 V drain-source blocking voltage before avalanche onset.
R_DS(on)	2.4 Ω @ V_GS = -10 V, I_D = -0.42 A - Defines conduction loss in active-clamp reset path.
Q_g	6.0–9.0 nC - Total gate charge determines drive strength requirement and switching speed trade-off.
E_AS	15 mJ - Single-pulse avalanche energy rating enables reliable operation during transient overvoltage events.
R_θJA	50 °C/W - Junction-to-ambient thermal resistance on standard PCB; limits power dissipation to ~2.5 W at T_A = 25°C.
V_GS(th)	-3.0 to -5.0 V - Gate threshold range ensures predictable turn-on with negative bias and avoids false triggering.
C_oss eff.	45 pF - Effective output capacitance across full V_DS swing (0 to -120 V), used for soft-switching timing calculations.

Pinout & Package

IRF6217TRPBF is housed in a surface-mount SO-8 (JEDEC MS-012AA) package with exposed drain pads (pins 1–3, 5–7 connected internally to drain). The package supports hand-soldering (300°C for 10 s) and automated reflow, with 1.27 mm lead pitch and 5.0 × 4.0 mm footprint.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 5, 6, 7	Drain (D)	High-current output node; electrically tied together and thermally connected to exposed pad for heat dissipation.
4	Gate (G)	Control input; requires negative voltage relative to source to turn on (V_GS < V_GS(th)).
8	Source (S)	Reference node for gate drive and current return path; body diode anode is internally connected here.

Key Features

Feature	Design Value
Low Q_g/Q_gd ratio	Q_gd = 2.8–4.2 nC / Q_g ≈ 47% - Reduces Miller-induced switching delay and improves controllability in high-dv/dt environments.
Fully characterized C_oss	C_oss = 15 pF @ V_DS = -120 V; 150 pF @ V_DS = -1.0 V - Enables precise zero-voltage switching (ZVS) timing in resonant converters.
Avalanche-rated	E_AS = 15 mJ, I_AR = -1.4 A - Allows safe operation under unclamped inductive switching without external snubbers.
Lead-free construction	RoHS-compliant Pb-free plating per JEDEC J-STD-020 - Meets environmental compliance for consumer-grade power supplies.

Applications

Active-Clamp Forward Converter

Isolated Flyback Reset Switch

Use Scenario: Used in the clamp leg of an active-clamp forward converter operating at 200–500 kHz to recycle transformer leakage energy and limit voltage stress on primary switch.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as synchronous reset switch; turns on during transformer reset phase to clamp V_DS and recover energy.

Use Value: Enables >90% efficiency by eliminating passive RCD clamp losses and reducing primary-side voltage stress from 2×V_in to ~1.3×V_in.

Use Scenario: Replaces diode-based clamp in high-efficiency flyback converters where secondary-side regulation demands tight V_out tolerance and low standby loss.

IC Role / Device Role / Timing Role: Acts as controlled clamp switch synchronized to primary MOSFET off-time; conducts only during energy transfer phase.

Use Value: Reduces clamp loss by >60% vs. Zener-diode clamp and eliminates reverse recovery noise in multi-output flybacks.

High-Voltage Synchronous Rectifier

Industrial DC-DC Bias Supply

Use Scenario: Implements high-side synchronous rectification in 48 V–150 V input isolated DC-DC modules for telecom and server PSUs.

IC Role / Device Role / Timing Role: P-channel MOSFET placed on secondary side with gate driven by isolated transformer or capacitive coupling; replaces Schottky diode.

Use Value: Lowers conduction loss by 40% at 0.5 A load versus 100 V Schottky, improving light-load efficiency and thermal margin.

Use Scenario: Powers auxiliary rails (e.g., +12 V, -5 V) in industrial PLCs and motor drives requiring stable bias under wide ambient temperature (-40°C to +125°C).

IC Role / Device Role / Timing Role: Functions as main switching element in discrete buck-derived bias supply with integrated controller feedback.

Use Value: Maintains regulation stability across -55°C to +150°C junction range and withstands 4.5 V/ns dv/dt transients common in noisy factory environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6215PbF	V_BRDSS = -150 V, R_DS(on) = 3.0 Ω @ -10 V - higher on-resistance, lower Q_g (5.5 nC)	Lower conduction loss sensitivity but reduced switching speed; better for lower-frequency (<100 kHz) clamp circuits	Select when thermal budget allows higher R_DS(on) and gate drive is limited.
STP15PF12	V_BRDSS = -120 V, R_DS(on) = 2.2 Ω @ -10 V - lower voltage rating, tighter threshold (-2.5 to -4.5 V)	Not suitable for 150 V bus designs; requires revised clamp voltage design and derated avalanche margin	Choose only if system max V_DS ≤ 120 V and tighter V_GS(th) tolerance is needed for gate driver compatibility.

Compared with IRF6215PbF and STP15PF12, IRF6217TRPBF offers the optimal balance of 150 V blocking, 2.4 Ω R_DS(on), and 6–9 nC Q_g for 200–500 kHz active-clamp topologies - enabling higher efficiency and smaller magnetics than either alternative.

Availability

IRF6217TRPBF is available at Aetrix Electronics and suitable for active-clamp forward converters, isolated flyback reset circuits, high-voltage synchronous rectifiers, and industrial DC-DC bias supplies requiring stable component supply and long-term manufacturability.

Supply support for IRF6217TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues to manufacture and support its legacy HEXFET^® portfolio, emphasizing reliability, automotive-grade qualification, and broad power semiconductor coverage.

This part belongs to the HEXFET^® P-channel high-voltage MOSFET product line, designed specifically for efficient energy recycling in isolated DC-DC topologies including active-clamp forward, resonant LLC, and flyback converters.

FAQ

What is the maximum continuous drain current for IRF6217TRPBF at 70°C ambient?

The maximum continuous drain current is -0.5 A at T_A = 70°C with V_GS = -10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SO-8 package on standard FR-4 PCBs without heatsinking.

Can IRF6217TRPBF be used in linear mode (as a pass transistor)?

No - it is not characterized or rated for linear (ohmic) operation. The Safe Operating Area (SOA) curve in Figure 8 shows pulse-limited operation only, and no DC SOA is provided. Use only in switching mode with proper avalanche and thermal margining.

Does IRF6217TRPBF have a built-in ESD protection diode on the gate?

No - the datasheet does not specify gate ESD protection. The gate oxide is rated for ±20 V V_GS, and external gate protection (e.g., Zener clamp to source) is recommended in systems with handling or layout-induced ESD risk.

What is the typical reverse recovery time of the body diode?

The body diode reverse recovery time (t_rr) is 51–77 ns at T_J = 25°C, I_F = -0.42 A, and di/dt = -100 A/µs. This fast recovery supports high-frequency synchronous rectification without significant commutation loss.

IRF6217TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 700mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.4Ohm @ 420mA, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 9 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 150 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF6217TRPBF FAQ

1.How can I place an order for IRF6217TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6217TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6217TRPBF reliable?

The price and inventory of IRF6217TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6217TRPBF is usually 5 days.

3.What payment methods are accepted for IRF6217TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6217TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6217TRPBF?

IRF6217TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6217TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6217TRPBF?

For technical support, including IRF6217TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6217TRPBF requirements.

6.How does Aetrix verify that IRF6217TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF6217TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6217TRPBF meets industry standards.

7.What is the process for return or replacement of IRF6217TRPBF?

All IRF6217TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6217TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6217TRPBF part is unused and in its original packaging.

Return procedure for IRF6217TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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