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Infineon Technologies IRF6217TRPBF-1
- Part No.:
- IRF6217TRPBF-1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF6217TRPBF-1.pdf
- Description:
- MOSFET P-CH 150V 700MA 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:4,871
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Product details
Overview
IRF6217TRPBF-1 from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, rated for -150 V VDS, 2.4 Ω RDS(on) at -10 V VGS, -0.7 A continuous drain current at 25°C, and optimized for low-power load switching in industrial control and power management circuits.
For engineers reviewing the IRF6217TRPBF-1 datasheet, IRF6217TRPBF-1 pinout, IRF6217TRPBF-1 application, or IRF6217TRPBF-1 equivalent, key selection criteria include verified avalanche energy rating (15 mJ), gate charge (6 nC typ.), body diode reverse recovery (51–77 ns), and SO-8 thermal resistance (50 °C/W junction-to-ambient).
Technical Context
This MOSFET operates as a high-side or low-side switch in DC-DC converters, battery protection, and motor driver pre-driver stages. Its -150 V breakdown voltage supports operation across wide-input industrial supplies, while its -5.0 V gate threshold ensures reliable turn-on with standard logic-level drive.
Dynamic performance is defined by 12 ns turn-on delay, 14 ns turn-off delay, and 7.2 ns rise time under -75 V VDD and 6.2 Ω gate resistance - enabling efficient switching up to ~1 MHz in hard-switched topologies with minimal overlap loss.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -150 V - Withstands up to -150 V drain-source voltage before avalanche conduction begins. |
| RDS(on) | 2.4 Ω @ VGS = -10 V - On-resistance determines conduction loss in linear or saturated switching regions. |
| ID (25°C) | -0.7 A - Maximum continuous drain current at ambient temperature, defining steady-state power handling. |
| Qg | 6.0 nC (typ.) - Total gate charge dictates required gate driver current and switching speed trade-offs. |
| EAS | 15 mJ - Single-pulse avalanche energy rating enables robustness against inductive switching transients. |
| VGS(th) | -3.0 to -5.0 V - Gate threshold range confirms logic-compatible turn-on with -5 V or lower drive sources. |
| Ciss | 150 pF - Input capacitance affects gate drive loop stability and Miller effect during switching transitions. |
Pinout & Package
SO-8 surface-mount package per JEDEC MS-012AA, with exposed drain pad on bottom for thermal enhancement. Pin 1 is gate (G), pins 2–4 and 6–8 are parallel-connected drains (D), and pins 5 and 7 are sources (S). Industry-standard layout enables multi-vendor PCB compatibility.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control terminal; requires -10 V to fully enhance channel and minimize RDS(on). |
| 2, 3, 4, 6, 8 | Drain (D) | High-side or low-side power path connection; electrically tied internally for reduced inductance and thermal spreading. |
| 5, 7 | Source (S) | Reference node for gate drive and current return; also forms cathode of integrated body diode. |
Key Features
| Feature | Design Value |
|---|---|
| RoHS-compliant, halogen-free | Meets EU environmental directives without compromising thermal or electrical reliability. |
| MSL1 moisture sensitivity | Zero bake requirement before reflow; suitable for standard SMT assembly lines. |
| Integrated body diode | VSD = -1.6 V at -0.42 A enables bidirectional current flow in H-bridge or flyback configurations. |
| Industrial qualification | Validated per JEDEC JESD47F for extended temperature operation (-55°C to +150°C). |
Applications
| Industrial Power Sequencing | Battery Protection Circuit |
|---|---|
Use Scenario: Controlled power-up/down sequencing of multiple rails in programmable logic controllers and sensor nodes. IC Role / Device Role / Timing Role: Low-side switch enabling precise enable/disable timing via microcontroller GPIO. Use Value: -0.7 A rating and 2.4 Ω RDS(on) limit voltage drop and self-heating during sustained 3.3 V/5 V rail control. | Use Scenario: Reverse-current blocking and overvoltage cutoff in 12 V lead-acid or LiFePO4 backup systems. IC Role / Device Role / Timing Role: High-side P-channel switch isolating battery from load during fault conditions. Use Value: -150 V VDS withstands load dump transients; body diode reverse recovery (51 ns) minimizes shoot-through risk. |
| Low-Power Motor Pre-Driver | DC-DC Converter Synchronous Rectifier |
Use Scenario: Gate driving of larger N-channel MOSFETs in brushed DC motor H-bridges using logic-level signals. IC Role / Device Role / Timing Role: Level-shifting interface between MCU output and high-side gate driver input. Use Value: 6 nC Qg allows fast turn-on with low-current drivers; SO-8 footprint simplifies layout near gate driver ICs. | Use Scenario: Secondary-side synchronous rectification in isolated flyback or forward converters operating below 1 W. IC Role / Device Role / Timing Role: Low-duty-cycle rectifying switch replacing Schottky diode to reduce conduction loss. Use Value: -1.6 V VSD and 150 pF Ciss balance forward conduction and switching losses at <100 kHz frequencies. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7207PbF | VDS = -30 V, RDS(on) = 0.12 Ω @ -4.5 V - lower voltage, lower RDS(on), higher ID (3.2 A) | Suitable only for ≤30 V systems; cannot replace IRF6217TRPBF-1 in 48 V or higher bus applications. | Select when operating voltage is ≤30 V and higher current capability is needed with logic-level drive. |
| Si2301DS-T1-E3 | VDS = -20 V, RDS(on) = 0.115 Ω @ -4.5 V - smaller SOT-23 package, lower thermal mass, no exposed drain pad | Limited to ≤20 V loads; lacks avalanche rating and SO-8 thermal dissipation capability. | Prefer for space-constrained, low-voltage (<20 V), low-duty-cycle applications where board area is critical. |
Compared with IRF7207PbF and Si2301DS-T1-E3, the IRF6217TRPBF-1 uniquely balances -150 V ruggedness, SO-8 thermal performance, and industrial-grade reliability - making it irreplaceable in 48–120 V industrial power control where voltage margin and transient immunity are non-negotiable.
Availability
IRF6217TRPBF-1 is available at Aetrix Electronics and suitable for industrial power sequencing, battery protection circuits, and low-power motor pre-driver designs requiring stable component supply and long-term manufacturability.
Supply support for IRF6217TRPBF-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control solutions.
The IRF6217TRPBF-1 belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for rugged, high-voltage discrete switching in industrial automation, power tools, and energy infrastructure equipment.
FAQ
What is the maximum safe operating temperature for IRF6217TRPBF-1?
The IRF6217TRPBF-1 has a maximum junction temperature of +150°C and a storage temperature range of -55°C to +150°C. Its SO-8 package exhibits 50°C/W junction-to-ambient thermal resistance on standard FR-4 PCBs, meaning derating begins above 25°C ambient unless heatsinking or copper pour is added.
Does IRF6217TRPBF-1 have avalanche capability, and how is it specified?
Yes - the IRF6217TRPBF-1 is rated for 15 mJ single-pulse avalanche energy (EAS) at TJ = 25°C, tested with L = 15 mH, RG = 25 Ω, and IAS = -1.4 A. This rating applies to unclamped inductive switching events and is validated per JEDEC JESD24-1 guidelines.
Can IRF6217TRPBF-1 be driven directly from a 3.3 V microcontroller GPIO?
No - its gate threshold voltage ranges from -3.0 V to -5.0 V, and full enhancement requires -10 V VGS to achieve 2.4 Ω RDS(on). A 3.3 V GPIO cannot provide sufficient negative bias; a level-shifting circuit or dedicated gate driver is required for reliable switching.
Is the body diode in IRF6217TRPBF-1 suitable for synchronous rectification?
It is usable but not optimized: VSD = -1.6 V at -0.42 A and trr = 51–77 ns indicate moderate forward voltage and recovery speed. For high-efficiency synchronous rectification, dedicated low-VF MOSFETs with faster recovery (e.g., <30 ns) are preferred.
IRF6217TRPBF-1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 700mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 2.4Ohm @ 420mA, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 9 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 150 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF6217TRPBF-1 FAQ
1.How can I place an order for IRF6217TRPBF-1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF6217TRPBF-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF6217TRPBF-1 reliable?
The price and inventory of IRF6217TRPBF-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6217TRPBF-1 is usually 5 days.
3.What payment methods are accepted for IRF6217TRPBF-1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6217TRPBF-1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF6217TRPBF-1?
IRF6217TRPBF-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF6217TRPBF-1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF6217TRPBF-1?
For technical support, including IRF6217TRPBF-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6217TRPBF-1 requirements.
6.How does Aetrix verify that IRF6217TRPBF-1 is sourced from the original manufacturer or authorized distributors?
All IRF6217TRPBF-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6217TRPBF-1 meets industry standards.
7.What is the process for return or replacement of IRF6217TRPBF-1?
All IRF6217TRPBF-1 units undergo pre-shipment inspection (PSI). If there is an issue with IRF6217TRPBF-1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF6217TRPBF-1 part is unused and in its original packaging.
Return procedure for IRF6217TRPBF-1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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