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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6218PBF

Name: IRF6218PBF
Brand: Infineon Technologies
SKU: IRF6218PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6218PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF6218PBF.pdf

Description:: MOSFET P-CH 150V 27A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:4,038

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Product details

Overview

IRF6218PBF from Infineon Technologies (formerly International Rectifier) is a -150V, 150mΩ, -27A P-channel enhancement-mode HEXFET Power MOSFET in TO-220AB package, optimized as a reset switch in active-clamp DC-DC converters and high-side switching applications requiring low gate-to-drain charge and robust avalanche capability.

For engineers reviewing the IRF6218PBF datasheet, IRF6218PBF pinout, IRF6218PBF application, or IRF6218PBF equivalent, key selection criteria include its -150V V_DSS, 150mΩ R_DS(on) at V_GS = -10V, fully characterized C_oss,eff = 340pF, -110A pulsed drain current, and integral body diode with t_rr = 150ns and Q_rr = 860nC.

Technical Context

This P-channel MOSFET operates in enhancement mode with V_GS(th) = -3.0 to -5.0V and exhibits negative temperature coefficient for R_DS(on), enabling current sharing in parallel configurations. Its low Q_gd = 32nC and Q_g = 71nC (typ.) support high-frequency switching in isolated topologies.

The device features fully specified avalanche energy rating (E_AS = 400mJ at I_AS = -16A), validated under unclamped inductive switching conditions per Fig. 15. Thermal resistance R_θJC = 0.61°C/W enables high-power operation with heatsink mounting.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	-150V - Withstands up to -150V drain-source voltage before breakdown, suitable for 48V and 110V bus systems.
R_DS(on) max	150mΩ @ V_GS = -10V - Ensures <1.5W conduction loss at -20A continuous current with adequate heatsinking.
I_D cont	-27A @ T_C = 25°C - Supports high-current reset switch operation in active-clamp forward converters.
Q_g	71nC (typ.) - Enables efficient gate drive design with moderate gate resistor values (e.g., 3.9Ω).
C_oss,eff	340pF - Reduces turn-off losses and simplifies snubber design in resonant and soft-switching topologies.
E_AS	400mJ - Provides reliable unclamped inductive switching margin during transient overloads.
t_rr	150ns - Limits reverse recovery losses when used with synchronous rectification or freewheeling paths.

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-lead outline plus redundant drain connection (pin 4). Mounting torque: 10 lbf·in (1.1 N·m); soldering temperature: 260°C for 10 seconds.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives negative gate drive relative to source; threshold range -3.0V to -5.0V ensures clean turn-on at -10V.
2 (Drain)	High-side power path	Connected to primary winding or bus rail; electrically tied to metal tab for thermal conduction and EMI shielding.
3 (Source)	Reference node	Serves as return path for load current and gate drive reference; must be routed with low inductance in high-dI/dt applications.
4 (Drain)	Redundant drain connection	Provides additional current-carrying capacity and mechanical stability; electrically identical to pin 2.

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	32nC/71nC - Minimizes Miller-induced switching delay and improves controllability in hard-switched converters.
Fully characterized C_oss,eff	340pF - Enables accurate calculation of turn-off energy and snubber component sizing without iterative testing.
Avalanche-rated	E_AS = 400mJ - Eliminates need for external clamping circuits in active-clamp and flyback reset stages.
Lead-free construction	Pb-free plating and RoHS-compliant materials - Meets industrial environmental compliance requirements without derating.
Integral body diode	V_SD = -1.6V, Q_rr = 860nC - Supports bidirectional current flow during dead-time intervals in half-bridge configurations.

Applications

Active-Clamp Forward Converter

Isolated DC-DC Telecom PSU

Use Scenario: High-efficiency 48V input, 12V output telecom power supply using active-clamp forward topology with 200–500kHz switching frequency.

IC Role / Device Role / Timing Role: Primary-side reset switch that recycles magnetizing energy and clamps voltage spikes across main FET.

Use Value: Low C_oss,eff and high E_AS reduce stress on main switch and improve efficiency by >1.2% versus non-avalanche-rated alternatives.

Use Scenario: 3kW modular server PSU with dual forward stages operating at 300kHz, requiring high-reliability high-side switching.

IC Role / Device Role / Timing Role: High-side synchronous rectifier control switch in auxiliary bias winding circuit.

Use Value: -150V rating and -27A continuous current support stable operation under 100% load step with minimal thermal derating.

Industrial Motor Drive Gate Driver

High-Voltage Battery Management System

Use Scenario: 100V bus motor control inverter with integrated gate driver IC and discrete high-side protection FETs.

IC Role / Device Role / Timing Role: High-side level-shift switch enabling bootstrap capacitor recharge during low-side conduction.

Use Value: Fast t_r/t_f (70ns/30ns) and low Q_g ensure precise timing alignment between gate driver outputs and minimize shoot-through risk.

Use Scenario: 96V battery pack monitoring module requiring isolation and overvoltage protection for cell balancing circuits.

IC Role / Device Role / Timing Role: High-side disconnect switch isolating measurement circuitry during fault conditions.

Use Value: Robust -150V V_DSS and -110A pulsed current rating withstand transients up to 120V without failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP16PF55	V_DSS = -55V, R_DS(on) = 110mΩ, I_D = -16A - Lower voltage rating, higher current density but unsuitable above 60V bus.	Limited to 24–48V systems; cannot replace IRF6218PBF in 110V active-clamp designs.	Select only for cost-sensitive 48V telecom or PoE applications where voltage margin is sufficient.
IXTP120P10T	V_DSS = -100V, R_DS(on) = 120mΩ, I_D = -12A - Higher R_DS(on) and lower current, but superior SOA and lower Q_g (42nC).	Better suited for linear-mode operation and analog current limiting due to wider safe operating area.	Prefer for precision current regulation or analog gate-controlled loads where switching speed is secondary.

Compared with STP16PF55 and IXTP120P10T, IRF6218PBF uniquely balances -150V rating, -27A current, and 340pF effective output capacitance-making it irreplaceable in 100–120V active-clamp DC-DC converters where both voltage headroom and switching efficiency are critical.

Availability

IRF6218PBF is available at Aetrix Electronics and suitable for active-clamp forward converters, isolated telecom PSUs, industrial motor drive gate drivers, and high-voltage battery management systems requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF6218PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control solutions with vertical integration from silicon wafer to system-level validation.

The IRF6218PBF belongs to Infineon's legacy HEXFET® Power MOSFET product line, designed specifically for high-reliability, high-efficiency switching in industrial and telecom power conversion where ruggedness, avalanche tolerance, and thermal performance are paramount.

FAQ

What is the maximum gate-to-source voltage rating for IRF6218PBF?

The absolute maximum V_GS rating is ±20V. Operation beyond ±20V risks permanent gate oxide damage. Recommended gate drive is -10V to -15V for full enhancement, with minimum turn-on at -5.0V (V_GS(th) max). Gate resistors must limit peak current during fast transitions to avoid ringing-induced overshoot.

Can IRF6218PBF be used in synchronous rectification applications?

No-it is a P-channel MOSFET with an integral body diode optimized for high-side switching, not low-side synchronous rectification. Its V_SD = -1.6V and Q_rr = 860nC indicate slow reverse recovery unsuitable for high-frequency SR. Use N-channel devices like IRF7832 or SiR626DP for true synchronous rectification.

Does IRF6218PBF require a heatsink in continuous -20A operation?

Yes. At -20A and R_DS(on) = 150mΩ, conduction loss is 6W. With R_θJC = 0.61°C/W and ambient ≤50°C, junction temperature exceeds 175°C without heatsinking. A heatsink with R_θCA ≤ 1.5°C/W is required to maintain T_J ≤ 150°C at full load.

Is IRF6218PBF suitable for linear (analog) operation?

It is not recommended. While SOA curves exist (Fig. 8), its R_DS(on) variation with temperature and lack of guaranteed Safe Operating Area in linear mode make it unreliable for constant-current or voltage-regulator applications. Use dedicated linear MOSFETs such as IXTP01N100D or STP16NF55 for analog use cases.

IRF6218PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 27A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 150mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2210 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF6218PBF FAQ

1.How can I place an order for IRF6218PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6218PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6218PBF reliable?

The price and inventory of IRF6218PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6218PBF is usually 5 days.

3.What payment methods are accepted for IRF6218PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6218PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6218PBF?

IRF6218PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6218PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6218PBF?

For technical support, including IRF6218PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6218PBF requirements.

6.How does Aetrix verify that IRF6218PBF is sourced from the original manufacturer or authorized distributors?

All IRF6218PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6218PBF meets industry standards.

7.What is the process for return or replacement of IRF6218PBF?

All IRF6218PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6218PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6218PBF part is unused and in its original packaging.

Return procedure for IRF6218PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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