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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6218SPBF

Name: IRF6218SPBF
Brand: Infineon Technologies
SKU: IRF6218SPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6218SPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF6218SPBF.pdf

Description:: MOSFET P-CH 150V 27A D2PAK

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Product details

Overview

IRF6218SPBF from Infineon is a -150V, -27A, 150mΩ (at V_GS = -10V) P-channel D2-Pak (TO-263AB) HEXFET® Power MOSFET optimized for high-voltage active-clamp reset in DC-DC converters. It features fully characterized avalanche capability (210 mJ), low gate-to-drain charge (32 nC), and R_θJC = 0.61°C/W for high-power switching applications.

For engineers reviewing the IRF6218SPBF datasheet, IRF6218SPBF pinout, IRF6218SPBF application, or IRF6218SPBF equivalent, key selection criteria include negative-channel high-side switching capability, robust unclamped inductive switching performance, body diode recovery characteristics (t_rr = 150 ns), and thermal resistance under PCB-mount conditions.

Technical Context

This P-channel MOSFET operates as a high-side synchronous switch or active-clamp reset device in isolated topologies such as forward and flyback converters. Its -150V V_DS rating and -16A avalanche current support operation across wide input ranges with margin against voltage transients.

The device uses planar HEXFET technology with fully specified C_oss (370 pF at V_DS = -25V) and C_rss (89 pF), enabling accurate snubber and gate-drive loss estimation. Dynamic parameters-including Q_g = 71 nC (typ), t_d(off) = 35 ns, and t_f = 30 ns-are characterized at V_DS = -75V and I_D = -16A with R_G = 3.9 Ω.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-150 V - supports 120V bus designs with ≥25% overvoltage margin
R_DS(on)	150 mΩ max @ V_GS = -10V, I_D = -16A - defines conduction loss at rated current
I_D (25°C)	-27 A continuous - enables high-current clamp discharge without derating at T_C = 25°C
E_AS	210 mJ single-pulse avalanche energy - ensures reliability during unclamped inductive turn-off
Q_gd	32 nC - Miller charge directly impacts switching speed and gate driver sizing
t_rr	150 ns - body diode reverse recovery time critical for ZVS/ZCS timing in resonant topologies
R_θJC	0.61 °C/W - enables 250W dissipation with ≤153°C junction rise above 25°C case temperature

Pinout & Package

Package: D2-Pak (TO-263AB), surface-mount, isolated drain tab (pin 2), thermally enhanced for PCB heatsinking.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires negative V_GS to enhance; driven relative to source
2 (D)	Drain	Main power terminal; electrically connected to exposed metal tab; must be isolated on PCB
3 (S)	Source	Reference node for gate drive; common return for load current and body diode conduction

Key Features

Feature	Design Value
Lead-free construction	RoHS-compliant per PbF marking; compatible with standard reflow profiles
Low Q_gd/Q_g ratio	32/71 nC = 0.45 - reduces Miller-induced switching instability in high-dV/dt environments
Fully characterized C_oss	370 pF @ V_DS = -25V - enables precise soft-switching design and snubber tuning
Avalanche-rated	210 mJ E_AS - validated for repetitive unclamped inductive switching without degradation
Body diode t_rr	150 ns @ I_F = -16A - supports fast-recovery operation in synchronous rectification or clamp paths

Applications

Active-Clamp Forward Converter

High-Voltage DC-DC Isolated PSU

Use Scenario: Active-clamp reset circuit in 48–120V input telecom or server PSUs operating at 100–500 kHz.

IC Role / Device Role / Timing Role: High-side P-channel clamp switch that recycles transformer leakage energy and clamps V_DS during off-time.

Use Value: Enables zero-voltage switching of main FET, reducing EMI and improving efficiency by >2% vs. RCD clamp.

Use Scenario: Secondary-side synchronous rectifier or auxiliary high-side switch in industrial 150V-rated isolated DC-DC modules.

IC Role / Device Role / Timing Role: P-channel high-side switch controlling output stage sequencing or isolation control logic.

Use Value: Eliminates need for level-shifting gate drivers due to source-referenced control and -150V blocking capability.

Uninterruptible Power Supply (UPS)

Battery Management System (BMS) Protection

Use Scenario: Bidirectional DC-link switch in online UPS inverters handling 100–150V battery banks.

IC Role / Device Role / Timing Role: High-side P-MOSFET used in anti-backfeed and polarity protection circuits.

Use Value: Withstands 150V reverse battery connection and delivers <150mΩ on-resistance at -27A for low-loss battery coupling.

Use Scenario: High-side disconnect switch in 48V–96V BMS stacks for cell-group isolation and fault containment.

IC Role / Device Role / Timing Role: Load switch providing overvoltage and short-circuit protection via controlled turn-off.

Use Value: Avalanche rating (210 mJ) absorbs inductive kickback from contactor coils or relay loads during emergency shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage P-channel power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9540NPbF	V_DS = -100V, R_DS(on) = 200 mΩ @ -10V, lower avalanche rating (120 mJ)	Limited to ≤100V systems; insufficient margin for 120V bus transients	Select only if system V_IN ≤ 80V and avalanche stress is absent
IXTP120P10T	V_DS = -100V, R_DS(on) = 120 mΩ, TO-220 package, no D2-Pak thermal performance	Higher R_θJA (62°C/W vs. 40°C/W) limits power density in compact layouts	Prefer when through-hole mounting is required and board space allows larger footprint

Compared with IRF9540NPbF and IXTP120P10T, IRF6218SPBF uniquely combines -150V rating, D2-Pak thermal performance (R_θJC = 0.61°C/W), and validated 210 mJ avalanche energy-making it the only option qualified for active-clamp reset in 120V-class isolated converters requiring high reliability under transient stress.

Availability

IRF6218SPBF is available at Aetrix Electronics and suitable for active-clamp DC-DC converters, high-voltage industrial power supplies, and battery protection circuits requiring stable component supply and long-term manufacturability.

Supply support for IRF6218SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The HEXFET® Power MOSFET product line delivers high-voltage, high-current discrete transistors engineered for efficiency-critical switching applications including SMPS, motor drives, and energy infrastructure.

FAQ

Is IRF6218SPBF suitable for high-frequency switching above 300 kHz?

Yes. With t_f = 30 ns, t_d(off) = 35 ns, and Q_g = 71 nC, IRF6218SPBF supports clean switching up to 500 kHz in hard-switched topologies when paired with a low-impedance gate driver (≤5 Ω). Layout parasitics and gate drive strength become limiting factors beyond this frequency.

What is the maximum safe continuous drain current at 100°C case temperature?

The datasheet specifies I_D = -19 A at T_C = 100°C. This value is derived from thermal derating: 250 W × (1 − (100−25)/150) = 125 W → I_D = √(125 W / 0.15 Ω) ≈ -28.9 A, but the absolute limit is capped at -19 A per SOA curves to ensure safe operation within R_DS(on) and avalanche boundaries.

Does the body diode support synchronous rectification in buck-derived topologies?

No. The body diode is an integral P-N junction with V_SD = -1.6 V and t_rr = 150 ns, making it unsuitable for high-efficiency synchronous rectification. It is designed for clamp recovery and fault conduction-not continuous forward conduction. External Schottky or MOSFET-based synchronous rectifiers are required for that function.

Can IRF6218SPBF be used in linear regulator applications?

No. While it can operate in the linear region, its R_DS(on) variation with temperature (2.5× increase from 25°C to 175°C) and lack of Safe Operating Area (SOA) characterization for DC bias make it unsuitable for linear regulation. It is optimized for switching operation only, with SOA defined for pulsed conditions up to 100 µs.

IRF6218SPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 27A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 150mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2210 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF6218SPBF FAQ

1.How can I place an order for IRF6218SPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6218SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6218SPBF reliable?

The price and inventory of IRF6218SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6218SPBF is usually 5 days.

3.What payment methods are accepted for IRF6218SPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6218SPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6218SPBF?

IRF6218SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6218SPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6218SPBF?

For technical support, including IRF6218SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6218SPBF requirements.

6.How does Aetrix verify that IRF6218SPBF is sourced from the original manufacturer or authorized distributors?

All IRF6218SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6218SPBF meets industry standards.

7.What is the process for return or replacement of IRF6218SPBF?

All IRF6218SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6218SPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6218SPBF part is unused and in its original packaging.

Return procedure for IRF6218SPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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