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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF630NL

Name: IRF630NL
Brand: Infineon Technologies
SKU: IRF630NL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF630NL

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRF630NL.pdf

Description:: MOSFET N-CH 200V 9.3A TO262

Quantity:: RFQ Add To RFQ list

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Inventory:2,202

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Product details

Overview

IRF630NL from Infineon Technologies (formerly International Rectifier) is a 200 V, 9.3 A N-channel enhancement-mode power MOSFET in TO-220AB package with 0.30 Ω R_DS(on) at V_GS = 10 V, fully avalanche-rated, and optimized for hard-switched DC-DC converters, motor drives, and AC mains-switching applications.

For engineers reviewing the IRF630NL datasheet, IRF630NL pinout, IRF630NL application, or IRF630NL equivalent, key selection criteria include its 200 V V_BR(DSS), 94 mJ single-pulse avalanche energy, 35 nC total gate charge, 1.83 °C/W junction-to-case thermal resistance, and through-hole TO-220AB mounting for low-profile industrial power stages.

Technical Context

This HEXFET® fifth-generation device uses advanced planar processing to achieve low on-resistance per die area while maintaining rugged unclamped inductive switching capability. Its body diode exhibits 117–176 ns reverse recovery time and 542–813 nC Q_rr under 100 A/µs di/dt, enabling reliable operation in freewheeling and synchronous rectification roles.

The MOSFET features a gate threshold voltage of 2.0–4.0 V, forward transconductance of 4.9 S, and dynamic dv/dt rating up to 8.1 V/ns - supporting stable operation in noisy high-voltage environments without spurious turn-on. Its linear derating factor is 0.5 W/°C above 25°C case temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BR(DSS)	200 V - Withstands 200 V drain-source blocking voltage before breakdown at 250 µA leakage.
R_DS(on)	0.30 Ω - Enables <1.5 W conduction loss at 5.4 A continuous current with 10 V gate drive.
I_D @ T_C=25°C	9.3 A - Maximum continuous drain current with heatsink at 25°C case temperature.
E_AS	94 mJ - Single-pulse avalanche energy rating ensures robustness during inductive load switching.
Q_g	35 nC - Total gate charge determines required driver current and switching speed trade-offs.
R_θJC	1.83 °C/W - Junction-to-case thermal resistance enables precise heatsink sizing for thermal management.
t_r/t_f	14/15 ns - Fast rise/fall times support >100 kHz switching frequencies in SMPS designs.

Pinout & Package

IRF630NL uses the JEDEC-standard TO-220AB through-hole package with isolated tab (drain-connected), rated for 300°C soldering (10 s, 1.6 mm from case) and 10 lbf·in mounting torque.

Pin/Terminal	Circuit Role	Design Meaning
1 - Gate	Control electrode	Receives 10 V logic-level gate drive; threshold 2.0–4.0 V enables compatibility with standard microcontroller outputs.
2 - Drain	High-side power terminal	Connected to internal die backside and metal tab; electrically tied to pin 4 for enhanced thermal path and current handling.
3 - Source	Reference node	Serves as return path for drain current and gate drive reference; forms common node with body diode cathode.
4 - Drain	Secondary drain connection	Parallel drain terminal providing lower inductance and improved current sharing in high-current layouts.

Key Features

Feature	Design Value
Fully avalanche-rated	Guarantees 94 mJ single-pulse and 8.2 mJ repetitive avalanche energy survival without failure.
Low R_DS(on) × Q_g figure-of-merit	10.5 Ω·nC - Balances conduction and switching losses for high-efficiency 50–200 kHz power stages.
Fast body diode	117 ns typical t_rr and 542 nC Q_rr - Reduces freewheeling losses and EMI in flyback and buck converters.
Simple gate drive	Requires only 10 V for full enhancement; gate leakage <100 nA at ±20 V supports low-power control interfaces.
Thermally optimized package	TO-220AB with dual drain pins lowers thermal resistance to 1.83 °C/W and improves mechanical stability.

Applications

Switch-Mode Power Supplies

AC Motor Drives

Use Scenario: Primary-side switch in 100–500 W offline flyback and forward converters.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer via PWM duty cycle.

Use Value: 200 V rating supports universal input (85–265 VAC); 9.3 A ID allows compact transformer design without parallel devices.

Use Scenario: Inverter leg switch in 1/4–1 HP single-phase AC induction motor drives.

IC Role / Device Role / Timing Role: Half-bridge power switch modulating phase voltage using 6–20 kHz carrier frequency.

Use Value: Avalanche rating absorbs regenerative energy during motor deceleration; 0.30 Ω R_DS(on) limits I²R losses at 6 A RMS.

DC-DC Converters

Lighting Ballasts

Use Scenario: High-side switch in 12–48 V input, 3.3–12 V output synchronous buck converters.

IC Role / Device Role / Timing Role: Main power FET operating at 200–500 kHz with gate-driven synchronous rectification.

Use Value: Low Q_g (35 nC) reduces driver power; fast t_r/t_f minimizes dead-time losses.

Use Scenario: Resonant half-bridge switch in electronic CFL and LED driver ballasts.

IC Role / Device Role / Timing Role: Hard-switched resonant inverter element sustaining 100–200 kHz zero-voltage switching transitions.

Use Value: 8.1 V/ns dv/dt immunity prevents false triggering; 175°C max junction temperature accommodates enclosed lamp housing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM20	200 V, 20 A, 0.12 Ω R_DS(on), TO-220 package, higher current but larger gate charge (60 nC)	Better conduction efficiency at >10 A; less suitable for high-frequency switching due to higher Q_g	Select when thermal margin is constrained and switching frequency ≤100 kHz.
IRF640N	200 V, 18 A, 0.15 Ω R_DS(on), same TO-220AB package, 55 nC Q_g, identical avalanche rating	Lower on-resistance enables higher current density; requires stronger gate driver for same switching speed	Choose for upgraded current handling where board space and heatsink capacity allow.

Compared with STP20NM20 and IRF640N, IRF630NL offers the lowest gate charge among 200 V TO-220 MOSFETs, making it optimal for high-frequency, thermally constrained designs where driver strength is limited and avalanche robustness is critical.

Availability

IRF630NL is available at Aetrix Electronics and suitable for switch-mode power supplies, AC motor drives, DC-DC converters, and lighting ballasts requiring stable component supply across extended production lifecycles.

Supply support for IRF630NL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with headquarters in Munich, Germany.

The HEXFET® Power MOSFET product line was originally developed by International Rectifier and continues under Infineon to deliver rugged, high-voltage discrete power switches for industrial, consumer, and computing power conversion systems.

FAQ

Is IRF630NL suitable for logic-level gate drive?

No - IRF630NL has a gate threshold voltage range of 2.0–4.0 V and requires ≥10 V V_GS to achieve its specified 0.30 Ω R_DS(on). It is not a logic-level MOSFET; driving it with 3.3 V or 5 V will result in significantly higher on-resistance and thermal stress. A dedicated gate driver or level-shifting circuit is recommended for microcontroller interfacing.

What is the maximum safe operating temperature for IRF630NL?

The absolute maximum junction temperature is +175°C, and the storage temperature range is –55°C to +175°C. For reliable long-term operation, the junction temperature should be maintained ≤150°C under steady-state conditions. Derating begins at 25°C case temperature, with linear reduction of 0.5 W/°C beyond that point.

Can IRF630NL be paralleled with other MOSFETs?

Yes - its positive temperature coefficient of R_DS(on) (0.26 V/°C breakdown voltage tempco) and matched thermal characteristics enable stable current sharing when paralleled. Use identical layout, gate resistors, and source inductance balancing. The TO-220AB package's dual drain pins further improve current distribution uniformity across multiple devices.

Does IRF630NL include an integrated body diode?

Yes - it integrates a monolithic p-n junction body diode between source and drain, with V_SD = 1.3 V at 5.4 A and 25°C, reverse recovery time of 117–176 ns, and Q_rr of 542–813 nC. This diode is fully rated for continuous conduction and unclamped inductive switching, supporting freewheeling and synchronous rectification functions without external diodes.

IRF630NL Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 9.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 300mOhm @ 5.4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 575 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 82W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

IRF630NL FAQ

1.How can I place an order for IRF630NL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF630NL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF630NL reliable?

The price and inventory of IRF630NL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF630NL is usually 5 days.

3.What payment methods are accepted for IRF630NL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF630NL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF630NL?

IRF630NL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF630NL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF630NL?

For technical support, including IRF630NL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF630NL requirements.

6.How does Aetrix verify that IRF630NL is sourced from the original manufacturer or authorized distributors?

All IRF630NL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF630NL meets industry standards.

7.What is the process for return or replacement of IRF630NL?

All IRF630NL units undergo pre-shipment inspection (PSI). If there is an issue with IRF630NL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF630NL part is unused and in its original packaging.

Return procedure for IRF630NL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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