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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF630NS

Name: IRF630NS
Brand: Infineon Technologies
SKU: IRF630NS
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF630NS

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF630NS.pdf

Description:: MOSFET N-CH 200V 9.3A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF630NS from Infineon Technologies (formerly International Rectifier) is a 200V, 9.3A N-channel enhancement-mode power MOSFET in TO-220AB package, featuring 0.30Ω R_DS(on) at V_GS = 10V, 175°C max junction temperature, and full avalanche rating. It serves as a main switching device in DC-DC converters, motor drives, and SMPS primary-side power stages.

For engineers reviewing the IRF630NS datasheet, IRF630NS pinout, IRF630NS application, or IRF630NS equivalent, key selection criteria include its 200V V_DSS, 0.30Ω on-resistance, 37A pulsed drain current, 82W power dissipation at T_C = 25°C, and fast 7.9ns turn-on delay with 14ns rise time under standard test conditions.

Technical Context

This HEXFET® fifth-generation MOSFET uses advanced silicon processing to achieve low R_DS(on) per die area while maintaining ruggedness. Its gate threshold voltage (2.0–4.0V) enables direct drive from 5V logic, and its 35nC total gate charge supports efficient high-frequency switching up to several hundred kHz.

The device integrates a fully rated body diode with 117–176ns reverse recovery time and 542–813nC Q_rr, making it suitable for hard-switched topologies where diode conduction occurs. Its 8.1V/ns peak diode recovery dv/dt rating ensures robustness against parasitic turn-on during commutation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	200 V - Maximum blocking voltage before avalanche; sets upper limit for bus voltage in flyback or buck converters.
R_DS(on)	0.30 Ω @ V_GS = 10V, I_D = 5.4A - Determines conduction loss; yields ~1.7W dissipation at 9.3A continuous.
I_D (T_C = 25°C)	9.3 A - Continuous current capability with heatsink; derates linearly by 0.5 W/°C above 25°C case temp.
Q_g	35 nC - Total gate charge; defines driver strength requirement for 100kHz+ switching with <1µs transition times.
E_AS	94 mJ - Single-pulse avalanche energy; enables reliable operation during inductive load switching without snubbers.
t_r/t_f	14/15 ns - Rise/fall times at V_DD = 100V, I_D = 5.4A, R_G = 13Ω; supports clean edge control in hard-switched SMPS.
R_θJC	1.83 °C/W - Junction-to-case thermal resistance; allows calculation of junction temp rise over heatsink temp.

Pinout & Package

IRF630NS uses the industry-standard TO-220AB package with isolated tab (drain-connected), offering low thermal resistance and mechanical compatibility with universal heatsink mounting hardware.

Pin/Terminal	Circuit Role	Design Meaning
1 – GATE	Control electrode	High-impedance MOS gate requiring <35nC charge; sensitive to ESD; must be driven with low-impedance source.
2 – DRAIN	Main power output terminal	Internally connected to metal tab; electrically common with heatsink unless insulated mounting used.
3 – SOURCE	Power return reference	Common node for gate drive return and current sensing; carries full load current and must minimize trace inductance.
4 – DRAIN	Secondary drain connection	Redundant drain pin for enhanced current handling and reduced package inductance in high-di/dt applications.

Key Features

Feature	Design Value
Fully avalanche rated	94 mJ single-pulse energy tolerance eliminates need for external clamping in inductive switching circuits.
Low R_DS(on)	0.30 Ω enables <2W conduction loss at 9.3A, reducing heatsink size and system cost in 20–50W power stages.
Fast switching	7.9ns t_d(on), 14ns t_r, and 27ns t_d(off) support >200kHz operation with minimal switching loss in resonant converters.
Robust body diode	117–176ns t_rr and 8.2 mJ repetitive avalanche energy allow reliable freewheeling in synchronous rectifier and half-bridge configurations.
Simple drive requirements	V_GS(th) of 2.0–4.0V permits direct interface with 5V microcontrollers or gate drivers without level-shifting circuitry.

Applications

Switch-Mode Power Supply

Motor Drive Inverter

Use Scenario: Primary-side switch in 30–60W offline flyback or forward converter with universal AC input.

IC Role / Device Role / Timing Role: Main power switch controlling energy transfer; operates at 65–130kHz with zero-voltage switching assist.

Use Value: 0.30Ω R_DS(on) limits conduction loss to <1.8W at full load, enabling compact heatsink design and >87% efficiency.

Use Scenario: Low-side switch in 24V brushed DC motor H-bridge driving 5–10A loads in industrial actuators.

IC Role / Device Role / Timing Role: PWM-controlled power path element; handles bidirectional current during braking via body diode conduction.

Use Value: 94mJ E_AS withstands inductive kickback during rapid PWM shutdown without failure or snubber components.

DC-DC Converter

Lighting Ballast

Use Scenario: High-side switch in 12V-to-48V boost converter for telecom power systems.

IC Role / Device Role / Timing Role: Synchronous rectifier replacement in non-isolated boost stage; switched at 200kHz with gate driver IC.

Use Value: 35nC Q_g allows efficient drive from UCC27531-type drivers, minimizing gate drive loss and propagation delay mismatch.

Use Scenario: Resonant switch in electronic CFL ballast operating at 30–50kHz with lamp ignition pulses.

IC Role / Device Role / Timing Role: Hard-switched resonant inverter transistor; subjected to high dv/dt and repetitive avalanche stress during lamp strike.

Use Value: 8.1V/ns dv/dt rating and 8.2mJ E_AR ensure stable operation across lamp life without parameter drift or failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM20	200V V_DSS, 20A I_D, 0.13Ω R_DS(on), TO-220 package	Higher current rating and lower on-resistance but larger gate charge (60nC) and no published E_AS spec	Preferred when higher continuous current and lower conduction loss are critical; requires stronger gate driver.
IXTP12N20P	200V V_DSS, 12A I_D, 0.22Ω R_DS(on), TO-220 package, 100% avalanche tested	Slightly lower R_DS(on), same avalanche rating, tighter V_GS(th) distribution (2.5–3.5V)	Better for designs requiring guaranteed avalanche performance and tighter gate threshold control in temperature-sensitive environments.

Compared with STP20NM20 and IXTP12N20P, IRF630NS offers balanced trade-offs: moderate R_DS(on) and gate charge, fully specified avalanche capability, and proven reliability in legacy industrial power supplies-making it ideal for cost-sensitive, medium-power replacements where driver strength and thermal margin are constrained.

Availability

IRF630NS is available at Aetrix Electronics and suitable for switch-mode power supplies, motor drives, and DC-DC converters requiring stable component supply and long-term industrial availability.

Supply support for IRF630NS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with core expertise in silicon-based power devices and wide-bandgap technologies.

The IRF630NS belongs to the HEXFET® fifth-generation power MOSFET product line, engineered for high-efficiency, high-reliability switching in commercial and industrial power conversion systems up to 100W.

FAQ

Is IRF630NS lead-free and RoHS compliant?

Yes, IRF630NS is lead-free and RoHS compliant. The "P" suffix in later assembly lot codes indicates lead-free construction, and all current production meets EU RoHS Directive 2011/65/EU requirements including maximum 0.1% lead by weight in homogeneous materials. Full compliance documentation is available upon request.

Can IRF630NS be paralleled for higher current handling?

Yes, IRF630NS supports safe paralleling due to its positive temperature coefficient of R_DS(on), which promotes current sharing as junction temperature rises. Designers must match gate drive impedance, minimize layout asymmetry, and ensure uniform heatsinking to avoid thermal runaway between devices.

What is the maximum recommended gate resistor value for 100kHz operation?

For 100kHz switching with 35nC Q_g, a gate resistor of ≤10Ω is recommended to achieve <100ns effective turn-on/off times and limit switching loss. At 13Ω (datasheet test condition), t_d(on) is 7.9ns and t_d(off) is 27ns-values that scale predictably with R_G and driver capability.

Does IRF630NS require a gate protection Zener diode?

A 15V gate protection Zener is recommended despite the ±20V absolute maximum V_GS rating. Transient overshoot from PCB inductance during fast switching can exceed 18V, risking oxide damage. A 12–15V Zener placed at the gate pin (not driver output) provides robust protection without slowing switching speed.

IRF630NS Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 9.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 300mOhm @ 5.4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 575 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 82W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF630NS FAQ

1.How can I place an order for IRF630NS through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF630NS on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF630NS reliable?

The price and inventory of IRF630NS are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF630NS is usually 5 days.

3.What payment methods are accepted for IRF630NS?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF630NS transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF630NS?

IRF630NS orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF630NS order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF630NS?

For technical support, including IRF630NS datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF630NS requirements.

6.How does Aetrix verify that IRF630NS is sourced from the original manufacturer or authorized distributors?

All IRF630NS products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF630NS meets industry standards.

7.What is the process for return or replacement of IRF630NS?

All IRF630NS units undergo pre-shipment inspection (PSI). If there is an issue with IRF630NS, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF630NS part is unused and in its original packaging.

Return procedure for IRF630NS:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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