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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF630NSPBF

Name: IRF630NSPBF
Brand: Infineon Technologies
SKU: IRF630NSPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF630NSPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF630NSPBF.pdf

Description:: MOSFET N-CH 200V 9.3A D2PAK

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Product details

Overview

IRF630NSPBF from Infineon Technologies (formerly International Rectifier) is a 200 V, 9.3 A N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, featuring R_DS(on) = 0.30 Ω at V_GS = 10 V, 175 °C maximum junction temperature, and full avalanche rating. It serves as a high-efficiency switching element in DC-DC converters, motor drives, and AC solid-state relays.

For engineers reviewing the IRF630NSPBF datasheet, IRF630NSPBF pinout, IRF630NSPBF application, or IRF630NSPBF equivalent, key selection criteria include its 200 V V_DS rating, 0.30 Ω on-resistance, 37 A pulsed drain current capability, fast 14 ns rise time, and TO-220AB thermal performance with R_θJC = 1.83 °C/W.

Technical Context

This MOSFET employs fifth-generation HEXFET process technology to achieve low specific on-resistance and high ruggedness. Its gate threshold voltage (2.0–4.0 V) enables simple TTL/CMOS drive, while the 35 nC total gate charge supports efficient high-frequency switching up to several hundred kHz.

The integrated body diode exhibits 117–176 ns reverse recovery time and 542–813 nC Q_rr, making it suitable for freewheeling and synchronous rectification where controlled diode recovery is required. The device is fully rated for single-pulse avalanche energy (94 mJ) and repetitive avalanche (8.2 mJ), enabling robust operation under inductive load switching.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - Withstands up to 200 V drain-source blocking voltage, suitable for 110/220 VAC line-connected switch-mode topologies.
R_DS(on)	0.30 Ω @ V_GS = 10 V - Delivers <1.5 W conduction loss at 5.4 A continuous current, enabling compact thermal design.
I_D (T_C = 25°C)	9.3 A - Supports sustained 9.3 A drain current with heatsink at 25°C case temperature, defining baseline power handling.
Q_g	35 nC - Total gate charge determines driver strength requirement; compatible with standard gate drivers delivering ≥1 A peak.
t_r/t_f	14 ns / 15 ns - Fast switching edges minimize transition losses in hard-switched converters operating up to 500 kHz.
E_AS	94 mJ - Single-pulse avalanche energy rating ensures reliable operation during inductive turn-off transients without external snubbers.
R_θJC	1.83 °C/W - Junction-to-case thermal resistance enables direct mounting to heatsinks for dissipating up to 82 W at T_C = 25°C.

Pinout & Package

IRF630NSPBF uses the industry-standard TO-220AB package with isolated tab (drain-connected). The package features 3 leads: Gate (G), Drain (D), and Source (S), arranged left-to-right when viewing the front (label side) with leads down.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel conduction; requires ≤±20 V gate-source voltage; 100 nA leakage at ±20 V.
D	Drain	High-side power terminal; electrically connected to metal tab; must be insulated from heatsink unless referenced to same potential.
S	Source	Power return path and reference for gate drive; carries full load current and forms body diode anode.

Key Features

Feature	Design Value
Fully avalanche rated	94 mJ single-pulse and 8.2 mJ repetitive avalanche energy ensure reliability in inductive switching without derating.
Low R_DS(on)	0.30 Ω at 10 V gate drive reduces conduction losses by >30% versus prior-generation 200 V MOSFETs at same current.
Fast switching	7.9 ns turn-on delay + 14 ns rise time enables high-frequency operation with minimal switching loss in SMPS designs.
Simple gate drive	2.0–4.0 V V_GS(th) allows direct interface with 3.3 V or 5 V logic without level-shifting circuitry.
Robust body diode	1.3 V forward drop at 5.4 A and 117 ns t_rr support efficient freewheeling in buck and flyback converters.

Applications

DC-DC Converters

Motor Drives

Use Scenario: Step-down (buck) converter in industrial PLC power supplies operating from 24–48 V input.

IC Role / Device Role / Timing Role: Primary high-side switching transistor controlling energy transfer to output inductor.

Use Value: 0.30 Ω R_DS(on) limits conduction loss to <1.5 W at 5.4 A, enabling >92% efficiency at 200 kHz switching.

Use Scenario: Half-bridge leg in 24 V brushed DC motor controller for automated gate actuators.

IC Role / Device Role / Timing Role: Low-side switch completing current path through motor winding during PWM on-time.

Use Value: 37 A pulsed current rating handles 3× stall current surges; 175 °C T_J rating sustains operation under intermittent overload.

AC Solid-State Relays

UPS Inverters

Use Scenario: Bidirectional AC switching stage in DIN-rail mounted SSR replacing electromechanical relays.

IC Role / Device Role / Timing Role: Back-to-back configured pair providing zero-crossing–controlled AC load switching.

Use Value: 200 V V_DS withstands 120/230 VAC peak voltages; 8.2 mJ E_AR ensures survivability during line transients.

Use Scenario: Output H-bridge stage in 1 kVA offline UPS converting 360 V DC bus to 230 V AC sine wave.

IC Role / Device Role / Timing Role: High-voltage switching element in full-bridge topology driving LC filter network.

Use Value: 1.83 °C/W R_θJC allows 40 W dissipation with modest heatsink; dv/dt rating of 8.1 V/ns suppresses false triggering.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM20	V_DS = 200 V, R_DS(on) = 0.22 Ω, I_D = 20 A, TO-220 package, no avalanche rating specified	Lower on-resistance but untested for repetitive avalanche; less rugged under inductive switching stress	Preferable for high-efficiency, non-inductive loads where avalanche immunity is not required
IRF640NPBF	V_DS = 200 V, R_DS(on) = 0.18 Ω, I_D = 18 A, same TO-220AB package, fully avalanche rated	Higher current and lower R_DS(on) with identical ruggedness; higher gate charge (51 nC) demands stronger driver	Recommended when upgrading for higher current or lower conduction loss, provided gate driver can supply ≥1.5 A peak

Compared with STP20NM20 and IRF640NPBF, IRF630NSPBF offers balanced trade-offs: moderate R_DS(on) and gate charge with verified avalanche capability-ideal for cost-sensitive, thermally constrained, inductive-load applications where driver strength is limited.

Availability

IRF630NSPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and AC solid-state relays requiring stable component supply across industrial OEM production cycles.

Supply support for IRF630NSPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues to manufacture and support the HEXFET® Power MOSFET portfolio with full backward compatibility and extended product longevity.

The IRF630NSPBF belongs to the fifth-generation HEXFET® family, engineered specifically for high-reliability industrial switching applications demanding ruggedness, thermal stability, and ease of paralleling in medium-power systems.

FAQ

Is IRF630NSPBF lead-free and RoHS compliant?

Yes. The "PbF" suffix confirms lead-free termination and full compliance with EU RoHS Directive 2011/65/EU. The device uses matte tin plating on leads and meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1), allowing unlimited floor life at ≤30 °C/60% RH.

Can IRF630NSPBF be used in parallel configurations?

Yes. Its positive temperature coefficient of R_DS(on) (0.26 V/°C dV_BR/dT_J) ensures inherent current sharing stability. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and individual gate resistors (≥10 Ω) to damp oscillation.

What is the maximum safe operating area (SOA) limit at 100°C case temperature?

At T_C = 100°C, the continuous drain current is derated to 6.5 A per datasheet. The SOA curve shows that at V_DS = 100 V, the device supports ≤2.5 A for 10 ms pulses and ≤1.2 A for 100 ms-values confirmed by the published Safe Operating Area graph on page 4 of the official datasheet.

Does IRF630NSPBF require a gate resistor for basic switching?

Yes. A series gate resistor (typically 10–47 Ω) is required to control dv/dt, suppress ringing, and limit peak gate current. Without it, the 35 nC gate charge and low gate impedance can cause overshoot (>20 V), shoot-through in half-bridges, and EMI due to 8.1 V/ns diode recovery dv/dt coupling.

IRF630NSPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 9.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 300mOhm @ 5.4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 575 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 82W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF630NSPBF FAQ

1.How can I place an order for IRF630NSPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF630NSPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF630NSPBF reliable?

The price and inventory of IRF630NSPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF630NSPBF is usually 5 days.

3.What payment methods are accepted for IRF630NSPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF630NSPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF630NSPBF?

IRF630NSPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF630NSPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF630NSPBF?

For technical support, including IRF630NSPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF630NSPBF requirements.

6.How does Aetrix verify that IRF630NSPBF is sourced from the original manufacturer or authorized distributors?

All IRF630NSPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF630NSPBF meets industry standards.

7.What is the process for return or replacement of IRF630NSPBF?

All IRF630NSPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF630NSPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF630NSPBF part is unused and in its original packaging.

Return procedure for IRF630NSPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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