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Infineon Technologies IRF630NSTRLPBF
- Part No.:
- IRF630NSTRLPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF630NSTRLPBF.pdf
- Description:
- MOSFET N-CH 200V 9.3A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:3,689
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Product details
Overview
IRF630NSTRLPBF from Infineon Technologies (formerly International Rectifier) is a 200V, 9.3A N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, with RDS(on) = 0.30Ω at VGS = 10V and fully rated for single-pulse avalanche energy (EAS = 94 mJ). It serves as a high-voltage switching element in DC-DC converters, motor drives, and AC solid-state relays.
For engineers reviewing the IRF630NSTRLPBF datasheet, IRF630NSTRLPBF pinout, IRF630NSTRLPBF application, or IRF630NSTRLPBF equivalent, key selection criteria include its 200V VDSS, 0.30Ω on-resistance, 82W power dissipation at TC = 25°C, fast 14ns rise time, and ruggedized avalanche capability - all critical for industrial switch-mode power supplies and inductive load control.
Technical Context
This MOSFET employs fifth-generation HEXFET® process technology to achieve low specific on-resistance and high cell density. Its gate threshold voltage (2.0–4.0V) enables direct TTL/CMOS drive, while the 35nC total gate charge supports efficient switching at frequencies up to several hundred kHz.
The device integrates a fast-recovery body diode (trr = 117–176 ns, Qrr = 542–813 nC) and exhibits stable RDS(on) over temperature (0.26 V/°C dV(BR)DSS/dTJ). Its 1.83°C/W junction-to-case thermal resistance enables reliable operation up to 175°C junction temperature in heatsink-mounted configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 200 V - Maximum blocking voltage before avalanche; defines use in 100–160V DC bus or 120VAC line-switching applications. |
| RDS(on) | 0.30 Ω @ VGS = 10V - Determines conduction loss (I²R) in high-current paths; enables ≤4.5W loss at 9.3A continuous. |
| ID @ TC = 25°C | 9.3 A - Continuous drain current rating under ideal heatsinking; sets minimum heatsink size for sustained operation. |
| EAS | 94 mJ - Single-pulse avalanche energy rating; allows safe clamping of inductive kickback without external snubbers. |
| tr / tf | 14 ns / 15 ns - Fast switching transitions reduce switching losses and EMI generation in hard-switched topologies. |
| Qg | 35 nC - Total gate charge required for full turn-on; determines driver strength needed (e.g., ≥1A peak for 35ns transition). |
| RθJC | 1.83 °C/W - Junction-to-case thermal resistance; used with heatsink RθCA to calculate max ambient operating temperature. |
Pinout & Package
IRF630NSTRLPBF uses the standard TO-220AB through-hole package with isolated tab (drain-connected), featuring three leads: Gate (G), Drain (D), and Source (S), arranged in G-D-S order when viewed from front (label side) with leads down.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Controls channel conduction; requires ≥10V for full enhancement; gate leakage <100nA at ±20V. |
| D | Drain | High-voltage output terminal; electrically connected to metal tab; must be insulated from heatsink unless referenced to same potential. |
| S | Source | Power return path and reference for gate drive; carries full load current and body diode reverse recovery charge. |
Key Features
| Feature | Design Value |
|---|---|
| Fully avalanche-rated | 94 mJ single-pulse EAS ensures robustness against inductive switching transients without derating. |
| Low gate charge | 35 nC total charge enables efficient drive from low-power controllers (e.g., UC384x, STM32 GPIO) with minimal Miller effect. |
| Fast body diode | 117–176 ns reverse recovery time and 542–813 nC Qrr support synchronous rectification and freewheeling in buck/LLC topologies. |
| Temperature-stable RDS(on) | Normalized on-resistance drift <3.5× from 25°C to 175°C - maintains predictable conduction loss across thermal range. |
| Lead-free & RoHS-compliant | Pb-free plating and halogen-free molding compound meet IPC/JEDEC J-STD-020 reflow profile requirements. |
Applications
| Motor Drive Inverter Stage | DC-DC Converter Primary Switch |
|---|---|
Use Scenario: Half-bridge leg in 24–48V BLDC motor controllers driving fans, pumps, or power tools. IC Role / Device Role / Timing Role: High-side/low-side switching element handling 5–9A continuous phase current with PWM up to 20kHz. Use Value: 0.30Ω RDS(on) limits I²R loss to <2.5W at 7.5A, enabling compact heatsink design; avalanche rating absorbs back-EMF spikes. | Use Scenario: Primary-side switch in 12V–48V input, 3.3V/5V/12V isolated flyback or forward converter for industrial PLCs. IC Role / Device Role / Timing Role: Main power switch operating at 65–130kHz with 50% duty cycle and 100V+ reflected secondary voltage. Use Value: 200V VDSS provides 2× margin over 100V reflected voltage; 14ns rise time minimizes overlap loss during ZVS transitions. |
| AC Solid-State Relay | LED Driver High-Side Switch |
Use Scenario: Zero-crossing or random-phase AC switching for resistive/heating loads up to 1.5kW at 120/240VAC. IC Role / Device Role / Timing Role: Back-to-back configured MOSFET pair (with external anti-parallel diode or complementary device) replacing mechanical relay contacts. Use Value: Fully rated avalanche capability eliminates need for external MOVs; 175°C max TJ supports sealed enclosure operation. | Use Scenario: Constant-current high-side switch controlling 1–3A strings of high-brightness LEDs in architectural or street lighting. IC Role / Device Role / Timing Role: Linear or PWM-controlled current regulator with source-follower feedback or dedicated LED driver IC interface. Use Value: Low 2.0–4.0V VGS(th) enables precise analog dimming; 82W PD allows short-duration overloads during surge testing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP20NM20 | 200V VDSS, 20A ID, 0.12Ω RDS(on), TO-220 - lower on-resistance but higher gate charge (60nC). | Better conduction efficiency at >10A, but requires stronger gate driver; less suitable for space-constrained layouts due to larger die area. | Select when system prioritizes conduction loss over switching loss and gate drive capability is available. |
| IXTP12N20P | 200V VDSS, 12A ID, 0.22Ω RDS(on), TO-220 - lower RDS(on), tighter VGS(th) (1.8–3.2V), no specified EAS. | Improved gate threshold consistency aids TTL compatibility; lacks documented avalanche rating - unsuitable for unclamped inductive loads. | Select for logic-level drive simplicity in non-avalanche-critical applications like LED switching or low-dV/dt DC loads. |
Compared with STP20NM20 and IXTP12N20P, IRF630NSTRLPBF offers balanced trade-offs: moderate RDS(on) and gate charge, guaranteed avalanche performance, and broad industry familiarity - making it optimal for cost-sensitive, thermally constrained, and reliability-critical industrial switching.
Availability
IRF630NSTRLPBF is available at Aetrix Electronics and suitable for motor drives, DC-DC converters, and AC solid-state relays requiring stable component supply and long-term industrial lifecycle support.
Supply support for IRF630NSTRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with roots in International Rectifier's pioneering power MOSFET development.
This device belongs to the HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial power conversion, motor control, and power supply applications where ruggedness and thermal stability are essential.
FAQ
Is IRF630NSTRLPBF suitable for surface-mount assembly?
No. The TO-220AB package is explicitly not recommended for surface-mount applications per the manufacturer's datasheet. It requires through-hole mounting with mechanical screw-down to a heatsink. Surface-mount alternatives include D2Pak variants like IRF630NSPbF, which share identical electrical specs but differ in thermal and mechanical interface.
What is the maximum safe operating voltage for repetitive switching?
The absolute maximum VDSS is 200V, but for reliable repetitive operation, design margins require limiting VDS to ≤160V under worst-case conditions (including ringing and overshoot). This aligns with the datasheet's 160V test condition for Qgd and dv/dt ratings, ensuring long-term reliability in hard-switched circuits.
Does IRF630NSTRLPBF require a gate resistor for stability?
Yes. A series gate resistor (typically 10–47Ω) is required to dampen parasitic oscillation caused by gate-drain capacitance (Crss = 25pF) interacting with PCB trace inductance. Without it, ringing can cause false turn-on, increased switching loss, and localized gate oxide stress - especially at high dv/dt (>8.1V/ns) or with long gate traces.
Can IRF630NSTRLPBF replace IRF630NPbF in existing designs?
Yes - IRF630NSTRLPBF is the tape-and-reel version of IRF630NPbF, sharing identical electrical, thermal, and mechanical specifications. The "STR" suffix denotes automated pick-and-place packaging; both use TO-220AB, have same lead finish (lead-free), and comply with RoHS. No layout or drive circuit changes are needed for substitution.
IRF630NSTRLPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 9.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 300mOhm @ 5.4A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 35 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 575 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 82W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
IRF630NSTRLPBF FAQ
1.How can I place an order for IRF630NSTRLPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF630NSTRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF630NSTRLPBF reliable?
The price and inventory of IRF630NSTRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF630NSTRLPBF is usually 5 days.
3.What payment methods are accepted for IRF630NSTRLPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF630NSTRLPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF630NSTRLPBF?
IRF630NSTRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF630NSTRLPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF630NSTRLPBF?
For technical support, including IRF630NSTRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF630NSTRLPBF requirements.
6.How does Aetrix verify that IRF630NSTRLPBF is sourced from the original manufacturer or authorized distributors?
All IRF630NSTRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF630NSTRLPBF meets industry standards.
7.What is the process for return or replacement of IRF630NSTRLPBF?
All IRF630NSTRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF630NSTRLPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF630NSTRLPBF part is unused and in its original packaging.
Return procedure for IRF630NSTRLPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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