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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF630NSTRR

Name: IRF630NSTRR
Brand: Infineon Technologies
SKU: IRF630NSTRR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF630NSTRR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF630NSTRR.pdf

Description:: MOSFET N-CH 200V 9.3A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF630NSTRR from Infineon Technologies (formerly International Rectifier) is a 200 V, 9.3 A N-channel enhancement-mode power MOSFET in TO-220AB package, with R_DS(on) = 0.30 Ω at V_GS = 10 V and fully avalanche-rated for robust switching in DC-DC converters, motor drives, and SMPS primary-side switches.

For engineers reviewing the IRF630NSTRR datasheet, IRF630NSTRR pinout, IRF630NSTRR application, or IRF630NSTRR equivalent, key selection criteria include its 200 V V_(BR)DSS, 82 W P_D at T_C = 25 °C, 35 nC total gate charge, 175 °C maximum junction temperature, and validated body diode recovery performance (t_rr = 117–176 ns).

Technical Context

This HEXFET® fifth-generation MOSFET uses advanced silicon processing to achieve low on-resistance per die area while maintaining fast switching (t_d(on) = 7.9 ns, t_r = 14 ns) and high dv/dt immunity (8.1 V/ns). Its gate threshold voltage (2.0–4.0 V) enables direct TTL/CMOS drive without level-shifting.

The device integrates a co-packaged body diode with 1.3 V forward drop at 5.4 A and supports repetitive avalanche energy up to 8.2 mJ. Thermal resistance R_θJC = 1.83 °C/W ensures efficient heat transfer to heatsinks in high-current linear or switching operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	200 V - Withstands 200 V drain-source blocking voltage before avalanche conduction begins.
R_DS(on)	0.30 Ω - Delivers low conduction loss at 5.4 A and 10 V gate drive, enabling <1.7 W I²R loss in continuous operation.
I_D @ 25°C	9.3 A - Supports sustained 9.3 A drain current with adequate heatsinking at ambient-referenced case temperature.
Q_g	35 nC - Determines gate driver current requirement; ~3.5 mA average drive current needed for 100 kHz switching at 10 V swing.
t_rr	117–176 ns - Specifies body diode reverse recovery time under 5.4 A, critical for synchronous rectification and hard-switched topologies.
E_AS	94 mJ - Single-pulse avalanche energy rating confirms ruggedness during inductive turn-off transients without failure.
R_θJC	1.83 °C/W - Enables calculation of junction temperature rise above heatsink; e.g., 40 °C rise at 22 W dissipation.

Pinout & Package

IRF630NSTRR is housed in a through-hole TO-220AB package with isolated tab (drain-connected), standardized for mechanical mounting and thermal interface to heatsinks. The package features 3.78 mm minimum creepage distance and 10.54 mm overall length per JEDEC outline.

Pin/Terminal	Circuit Role	Design Meaning
1 - Gate	Control electrode	Receives voltage-controlled signal to modulate channel conductivity; requires ≤±20 V applied relative to source.
2 - Drain	High-side power terminal	Connected to load or bus side; electrically tied to metal tab for thermal conduction and high-current return path.
3 - Source	Reference and return node	Serves as common reference for gate drive and current sensing; carries full load current back to supply ground.
4 - Drain	Secondary drain connection	Redundant drain pin for enhanced current handling and reduced package inductance in high-di/dt applications.

Key Features

Feature	Design Value
Fully avalanche rated	Guarantees reliable operation under unclamped inductive switching stress up to 94 mJ single-pulse energy.
Fast switching speed	7.9 ns turn-on delay + 14 ns rise time enables >500 kHz hard-switched operation with minimized switching losses.
Low gate charge	35 nC total charge reduces driver power consumption and allows use of low-cost gate drivers like TC4420 or UCC3732x.
Enhanced body diode	1.3 V forward voltage at 5.4 A and 117 ns reverse recovery time support quasi-resonant and freewheeling applications.
JEDEC TO-220AB compliant	Ensures mechanical interchangeability with legacy designs and compatibility with standard heatsink clamps and insulating sleeves.

Applications

Switch-Mode Power Supply

DC Motor Drive

Use Scenario: Primary-side switch in 100–300 W offline flyback or forward converters operating at 65–130 kHz.

IC Role / Device Role / Timing Role: High-voltage, high-current switching element controlling energy transfer from AC line to transformer primary.

Use Value: 200 V rating accommodates reflected output voltage plus leakage spike margin; 0.30 Ω R_DS(on) limits conduction loss to <1.5 W at 5 A RMS.

Use Scenario: H-bridge upper-arm switch driving brushed DC motors up to 24 V, 8 A in industrial actuators.

IC Role / Device Role / Timing Role: High-side power switch enabling bidirectional current control with PWM duty cycle modulation.

Use Value: Avalanche rating absorbs inductive kickback during PWM off-time; 175 °C T_J(max) sustains operation under stall conditions.

LED Driver

AC-DC Adapter

Use Scenario: Constant-current buck controller for high-brightness LED strings in commercial lighting fixtures.

IC Role / Device Role / Timing Role: Synchronous rectifier or main switching transistor regulating average LED current via peak-current-mode control.

Use Value: Low Q_g (35 nC) enables clean gate drive at 200–500 kHz; body diode t_rr < 176 ns prevents cross-conduction in synchronous topology.

Use Scenario: Primary switch in universal-input (90–264 VAC), 65 W adapter with active PFC front-end and LLC resonant secondary.

IC Role / Device Role / Timing Role: Main power switch in PFC boost stage handling 1.2 A average input current at 100 kHz.

Use Value: R_DS(on) = 0.30 Ω yields <0.5 W conduction loss at 1.2 A; 82 W P_D supports short-term overload without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM20	200 V V_(BR)DSS, 20 A I_D, R_DS(on) = 0.18 Ω, Q_g = 32 nC, TO-220 package	Higher current rating and lower R_DS(on) but identical voltage class and footprint	Select when higher continuous current (>9.3 A) or lower conduction loss is required without changing PCB layout.
FQP20N20	200 V V_(BR)DSS, 20 A I_D, R_DS(on) = 0.20 Ω, Q_g = 42 nC, TO-220 package	Higher gate charge increases driver demand; slightly better thermal R_θJA (40 vs 62 °C/W)	Prefer for thermally constrained environments where junction-to-ambient cooling dominates over gate drive efficiency.

Compared with STP20NM20 and FQP20N20, IRF630NSTRR offers tighter gate threshold (2.0–4.0 V) for predictable turn-on with logic-level drivers, lower E_AS margin (94 mJ vs ≥120 mJ), and proven legacy reliability in high-volume industrial SMPS designs.

Availability

IRF630NSTRR is available at Aetrix Electronics and suitable for switch-mode power supplies, DC motor drives, LED drivers, and AC-DC adapters requiring stable component supply across extended production lifecycles.

Supply support for IRF630NSTRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with core expertise in silicon-based power devices and system-level integration.

The IRF630NSTRR belongs to the HEXFET® fifth-generation power MOSFET product line, engineered for high-efficiency, high-reliability switching in commercial and industrial power conversion systems where ruggedness and thermal stability are critical.

FAQ

Is IRF630NSTRR RoHS-compliant and lead-free?

Yes, IRF630NSTRR is RoHS-compliant and manufactured with lead-free terminations. The "P" in the assembly line code (e.g., "LINE C" with "P") explicitly denotes lead-free construction per JEDEC J-STD-609, and the device meets EU Directive 2011/65/EU requirements without exemptions.

Can IRF630NSTRR be paralleled for higher current handling?

Yes, IRF630NSTRR supports safe paralleling due to its positive temperature coefficient of R_DS(on), which promotes current sharing as junction temperature rises. Designers must match gate drive impedance, minimize layout asymmetry, and ensure uniform heatsinking to avoid thermal runaway.

What is the maximum recommended gate resistor value for 100 kHz switching?

For 100 kHz operation with 10 V gate drive, a 10 Ω series gate resistor is recommended to limit peak current to ~1 A while maintaining t_r < 20 ns. Lower values (≤5 Ω) may be used with robust drivers; higher values (>22 Ω) increase switching losses and risk shoot-through in bridge configurations.

Does IRF630NSTRR require a gate driver IC, or can it be driven directly from a microcontroller?

A microcontroller GPIO (3.3 V or 5 V) cannot fully enhance IRF630NSTRR due to its 4.0 V max V_GS(th) and 10 V optimal drive requirement. Direct drive results in high R_DS(on) and excessive heating; a dedicated gate driver (e.g., TC4427) is mandatory for reliable, efficient operation.

IRF630NSTRR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 9.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 300mOhm @ 5.4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 575 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 82W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF630NSTRR FAQ

1.How can I place an order for IRF630NSTRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF630NSTRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF630NSTRR reliable?

The price and inventory of IRF630NSTRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF630NSTRR is usually 5 days.

3.What payment methods are accepted for IRF630NSTRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF630NSTRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF630NSTRR?

IRF630NSTRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF630NSTRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF630NSTRR?

For technical support, including IRF630NSTRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF630NSTRR requirements.

6.How does Aetrix verify that IRF630NSTRR is sourced from the original manufacturer or authorized distributors?

All IRF630NSTRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF630NSTRR meets industry standards.

7.What is the process for return or replacement of IRF630NSTRR?

All IRF630NSTRR units undergo pre-shipment inspection (PSI). If there is an issue with IRF630NSTRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF630NSTRR part is unused and in its original packaging.

Return procedure for IRF630NSTRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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