My Inquiry
My Account
Infineon Technologies IRF630NSTRRPBF
- Part No.:
- IRF630NSTRRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF630NSTRRPBF.pdf
- Description:
- MOSFET N-CH 200V 9.3A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:5,773
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRF630NSTRRPBF from Infineon Technologies (formerly International Rectifier) is a 200 V, 9.3 A N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, featuring 0.30 Ω RDS(on) at VGS = 10 V, fully avalanche-rated, and optimized for hard-switched DC-DC converters and motor control stages requiring robust unclamped inductive switching capability.
For engineers reviewing the IRF630NSTRRPBF datasheet, IRF630NSTRRPBF pinout, IRF630NSTRRPBF application, or IRF630NSTRRPBF equivalent, key selection criteria include its 94 mJ single-pulse avalanche energy rating, 8.1 V/ns di/dt immunity, 35 nC total gate charge, and thermal resistance of 1.83 °C/W junction-to-case - all critical for reliable high-current switching in industrial power supplies and solenoid drivers.
Technical Context
This MOSFET employs fifth-generation HEXFET silicon processing to achieve low on-resistance per die area while maintaining ruggedness against repetitive and single-pulse avalanche stress. Its body diode exhibits 117–176 ns reverse recovery time and 542–813 nC reverse recovery charge under 100 A/µs di/dt conditions.
The device operates across –55°C to +175°C junction temperature range with gate threshold voltage between 2.0 V and 4.0 V, forward transconductance of 4.9 S, and dynamic capacitances (Ciss = 575 pF, Coss = 89 pF, Crss = 25 pF) enabling predictable turn-on/turn-off timing in hard-switching topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 200 V - maximum blocking voltage before avalanche onset; defines upper limit for bus voltage in flyback, buck, and half-bridge designs |
| RDS(on) | 0.30 Ω @ VGS = 10 V, ID = 5.4 A - determines conduction loss and heatsink sizing in continuous current operation |
| ID (25°C) | 9.3 A - continuous drain current rating at 25°C case temperature; derates linearly by 0.5 W/°C above 25°C |
| EAS | 94 mJ - single-pulse avalanche energy; enables safe operation during inductive load turn-off without external snubbers |
| Qg | 35 nC - total gate charge; sets minimum driver current and switching speed trade-off in PWM-controlled systems |
| trr | 117–176 ns - body diode reverse recovery time; impacts commutation losses and EMI in synchronous rectification and freewheeling paths |
| RθJC | 1.83 °C/W - junction-to-case thermal resistance; used with heatsink RθCS to calculate max allowable power dissipation at target TJ |
Pinout & Package
IRF630NSTRRPBF uses the industry-standard TO-220AB through-hole package with isolated tab (drain-connected), offering low thermal resistance and mechanical robustness for board-level mounting with 10 lbf·in torque.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path output terminal | Electrically connected to metal tab; requires insulating washer when mounted to grounded heatsink |
| Gate | Control input for channel modulation | High-impedance MOS gate; sensitive to ESD; requires < ±20 V drive and proper gate resistor for dV/dt control |
| Source | Reference node for gate drive and current return | Common connection point for load return path and gate drive reference; carries full source current including body diode conduction |
Key Features
| Feature | Design Value |
|---|---|
| Fully avalanche rated | Guarantees safe operation under unclamped inductive switching up to 94 mJ single-pulse and 8.2 mJ repetitive energy |
| Fast switching with low Qgd/Qg | 17 nC Miller charge / 35 nC total gate charge ratio supports clean turn-off and reduced shoot-through risk in bridge circuits |
| Low RDS(on) × Qg figure-of-merit | 10.5 Ω·nC - balances conduction and switching losses for medium-frequency (<100 kHz) power conversion |
| Enhanced dv/dt immunity | Rated for 8.1 V/ns peak diode recovery dv/dt - suppresses false turn-on during high-speed commutation |
| Lead-free and RoHS compliant | Meets JEDEC J-STD-020 reflow profile; compatible with standard Pb-free assembly processes |
Applications
| Motor Drive Stage | DC-DC Converter Switch |
|---|---|
Use Scenario: Driving brushed DC motors in industrial actuators with PWM frequencies up to 20 kHz and stall currents ≤9 A. IC Role / Device Role / Timing Role: Main switching element in H-bridge or half-bridge topology; handles bidirectional current and regenerative braking via body diode conduction. Use Value: Avalanche rating eliminates need for external clamping diodes during motor current interruption; 0.30 Ω RDS(on) limits I²R loss to <25 W at 9.3 A. | Use Scenario: Primary switch in 24–48 V input, 5–12 V output non-isolated buck converter delivering up to 7 A continuous output. IC Role / Device Role / Timing Role: High-side synchronous switch operating at 50–100 kHz; controlled by dedicated gate driver IC with 10 V logic-level drive. Use Value: Low Qg (35 nC) enables fast edge rates with modest driver strength; 1.83 °C/W RθJC allows direct heatsinking for stable 82 W PD operation. |
| Solenoid Driver | UPS Inverter Stage |
Use Scenario: Driving 24 V, 5 A solenoid valves in factory automation PLC outputs with rapid on/off cycling. IC Role / Device Role / Timing Role: Low-side switch controlling solenoid coil current; subjected to repeated inductive kickback events. Use Value: 94 mJ EAS withstands worst-case de-energization spikes without failure; 4.0 V VGS(th) max ensures clean turn-on with 5 V microcontroller GPIO. | Use Scenario: Half-bridge leg in 120/230 VAC offline UPS inverter stage handling 300–500 W continuous load. IC Role / Device Role / Timing Role: High-voltage switching transistor in push-pull configuration; switches at 20–50 kHz with zero-voltage switching assistance. Use Value: 200 V VDSS provides 2× safety margin over 170 V DC bus; 89 pF Coss minimizes capacitive turn-on loss during ZVS transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP20NM20 | 200 V, 20 A, RDS(on) = 0.17 Ω, Qg = 42 nC, TO-220 | Higher current rating but larger gate charge; less avalanche ruggedness (EAS = 55 mJ) | Preferred where higher continuous current is needed and driver strength permits higher Qg. |
| IXTP12N20P | 200 V, 12 A, RDS(on) = 0.22 Ω, Qg = 24 nC, TO-220 | Lower Qg and better switching efficiency; lower avalanche rating (EAS = 45 mJ) | Selected for high-frequency SMPS where switching loss dominates and inductive stress is controlled. |
Compared with STP20NM20 and IXTP12N20P, IRF630NSTRRPBF offers superior avalanche ruggedness and balanced RDS(on)/Qg for cost-sensitive industrial switching where reliability under uncontrolled inductive loads is critical.
Availability
IRF630NSTRRPBF is available at Aetrix Electronics and suitable for motor drives, DC-DC converters, and solenoid control systems requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial OEM production.
Supply support for IRF630NSTRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon-based power devices and system-level integration.
The IRF630NSTRRPBF belongs to Infineon's legacy HEXFET® Power MOSFET product line, designed specifically for rugged, cost-effective switching in industrial power conversion, motor control, and uninterruptible power systems.
FAQ
Is IRF630NSTRRPBF pin-compatible with older IRF630 variants?
Yes - IRF630NSTRRPBF maintains identical TO-220AB pinout (Drain-Tab, Gate, Source) and electrical specifications as the original IRF630, with improvements in avalanche rating and tighter RDS(on) distribution. No PCB redesign is required for drop-in replacement in existing layouts.
What is the maximum recommended gate drive voltage?
The absolute maximum gate-to-source voltage is ±20 V. For reliable operation, drive voltage should be limited to 10–15 V to ensure full enhancement while avoiding gate oxide stress. Gate drive must include series resistance (typically 10–47 Ω) to dampen ringing and limit peak current during switching transitions.
Can IRF630NSTRRPBF be used in parallel configurations?
Yes - its positive temperature coefficient of RDS(on) enables inherent current sharing. Parallel operation requires matched devices, symmetrical layout, individual gate resistors, and thermal coupling to ensure uniform junction temperature rise across all units during high-current operation.
Does this part require a heatsink in 82 W operation?
Yes - at full 82 W power dissipation, even with ideal heatsinking (RθCS = 0.5 °C/W), junction temperature would exceed 175°C without active cooling. For continuous 82 W operation, forced-air cooling or a large heatsink with thermal interface material is mandatory to maintain TJ ≤ 175°C.
IRF630NSTRRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 9.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 300mOhm @ 5.4A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 35 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 575 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 82W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
IRF630NSTRRPBF FAQ
1.How can I place an order for IRF630NSTRRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF630NSTRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF630NSTRRPBF reliable?
The price and inventory of IRF630NSTRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF630NSTRRPBF is usually 5 days.
3.What payment methods are accepted for IRF630NSTRRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF630NSTRRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF630NSTRRPBF?
IRF630NSTRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF630NSTRRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF630NSTRRPBF?
For technical support, including IRF630NSTRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF630NSTRRPBF requirements.
6.How does Aetrix verify that IRF630NSTRRPBF is sourced from the original manufacturer or authorized distributors?
All IRF630NSTRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF630NSTRRPBF meets industry standards.
7.What is the process for return or replacement of IRF630NSTRRPBF?
All IRF630NSTRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF630NSTRRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF630NSTRRPBF part is unused and in its original packaging.
Return procedure for IRF630NSTRRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF630NSTRRPBF Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…
