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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF640NSPBF

Name: IRF640NSPBF
Brand: Infineon Technologies
SKU: IRF640NSPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF640NSPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF640NSPBF.pdf

Description:: MOSFET N-CH 200V 18A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF640NSPBF from Infineon Technologies (formerly International Rectifier) is a 200V, 18A N-channel enhancement-mode power MOSFET in TO-220AB package, featuring 0.15Ω R_DS(on) at V_GS = 10V, 150W power dissipation, and full avalanche rating. It serves as a high-efficiency switching element in DC-DC converters, motor drives, and SMPS primary-side switches where ruggedness and fast turn-on/turn-off are required.

For engineers reviewing the IRF640NSPBF datasheet, IRF640NSPBF pinout, IRF640NSPBF application, or IRF640NSPBF equivalent, key selection criteria include its 200V V_DSS, 0.15Ω on-resistance, 67nC total gate charge, 167ns typical reverse recovery time, and TO-220AB thermal performance with R_θJC = 1.0°C/W - all critical for hard-switched industrial power stages.

Technical Context

This HEXFET® fifth-generation device uses advanced silicon processing to minimize conduction loss while maintaining robust avalanche capability (E_AS = 247mJ). Its gate threshold voltage (2.0–4.0V) enables direct drive from 5V logic, and low Q_gd/Q_g ratio (33nC/67nC) supports stable high-frequency operation up to 100kHz in flyback and forward topologies.

The integrated body diode exhibits 1.3V forward drop at 11A and 167–251ns reverse recovery time under di/dt = 100A/µs, making it suitable for synchronous rectification and freewheeling paths where controlled commutation is essential. Thermal design leverages the TO-220AB's 1.0°C/W junction-to-case resistance for heatsink-mounted operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	200V - Maximum blocking voltage before avalanche onset; defines safe operating range in 110–170VAC input SMPS and 24–48V bus motor controls.
R_DS(on)	0.15Ω @ V_GS = 10V, I_D = 11A - Sets conduction loss of ≤18.15W at 11A; enables <1% efficiency penalty in 100W–500W power stages.
I_D (T_C = 25°C)	18A continuous - Sustains full-load current with adequate heatsinking; derates linearly to 13A at 100°C case temperature.
Q_g	67nC - Determines gate driver current requirement (e.g., ≥1.34A peak for 50ns turn-on); impacts switching loss and driver IC selection.
E_AS	247mJ single-pulse - Enables reliable operation under inductive load switching without external snubbers in relay drivers and solenoid controls.
t_rr	167ns typ. - Limits diode recovery-related voltage overshoot during hard commutation; constrains maximum practical switching frequency in non-ZVS designs.
R_θJC	1.0°C/W - Allows 150W dissipation with ≤150°C junction rise above 25°C case; requires minimum 1.1N·m mounting torque for thermal interface integrity.

Pinout & Package

IRF640NSPBF is housed in a through-hole TO-220AB package with isolated tab (drain-connected), standard 3-pin layout, and lead-free (PbF) finish. The package provides low thermal resistance and mechanical stability for board-level power switching applications requiring >50W dissipation.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path from source to load	Electrically connected to metal tab; must be electrically isolated from heatsink unless drain-referenced topology is used.
Gate	Control terminal for channel modulation	High-impedance input requiring <100nA leakage; sensitive to ESD; driven via series resistor (2.5Ω typical) to control dV/dt and ringing.
Source	Reference node for gate drive and current return	Common return path for load current and gate drive loop; internal source inductance (L_S) affects switching waveform fidelity.

Key Features

Feature	Design Value
Fully avalanche-rated	247mJ single-pulse energy handling ensures survivability during inductive turn-off transients without external clamping.
Low gate charge ratio	Q_gd/Q_g = 49% minimizes Miller effect, enabling stable 100kHz+ operation with standard gate drivers.
Enhanced diode recovery	167ns t_rr and 929nC Q_rr reduce switching losses in freewheeling and synchronous rectifier configurations.
Thermally optimized package	TO-220AB delivers 1.0°C/W R_θJC and supports 150W continuous dissipation with proper heatsink mounting (1.1N·m torque).

Applications

Switch-Mode Power Supply

Motor Drive Stage

Use Scenario: Primary-side switch in 200W offline flyback converter with universal AC input.

IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer during PWM on-time; handles 200V DC link and 11A peak current.

Use Value: 0.15Ω R_DS(on) limits conduction loss to <1.8W at 11A, while 247mJ E_AS absorbs leakage inductance spikes without snubber.

Use Scenario: Half-bridge high-side switch in 24V brushed DC motor controller with regenerative braking.

IC Role / Device Role / Timing Role: Power switch sourcing current to motor winding; body diode conducts reverse current during PWM off-time.

Use Value: 1.3V V_SD and 167ns t_rr minimize freewheeling loss and voltage overshoot during current reversal at 20kHz PWM.

DC-DC Converter

Industrial Relay/Solenoid Driver

Use Scenario: Synchronous rectifier in isolated 48V-to-12V forward converter for telecom shelf power.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; turned on in phase with primary switch.

Use Value: R_DS(on) = 0.15Ω reduces conduction loss by >60% vs. 0.5V Schottky at 10A, improving efficiency from 89% to 93%.

Use Scenario: Solid-state replacement for 24V/2A electromagnetic relay in PLC output module.

IC Role / Device Role / Timing Role: Inductive load switch with integrated avalanche protection; handles 200V flyback spikes during coil de-energization.

Use Value: Rated 247mJ E_AS absorbs 100% of stored inductive energy (½ × 2H × (2A)² = 4J) in multiple pulses, eliminating external TVS.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM60FD	600V V_DSS, 0.32Ω R_DS(on), 20A I_D, D²PAK package	Higher voltage rating but higher on-resistance; surface-mount only	Select when 600V blocking is required and PCB space allows SMT; avoid for 200V/low-loss priority.
IXTP18N20P	200V V_DSS, 0.18Ω R_DS(on), 18A I_D, TO-220FP package (full-pack)	Same voltage/current class but higher R_DS(on); lower power dissipation limit (125W)	Choose when lower profile (TO-220FP) is needed and 0.03Ω higher on-resistance is acceptable.

Compared with STP20NM60FD and IXTP18N20P, IRF640NSPBF offers the lowest R_DS(on) (0.15Ω) in TO-220AB at 200V, delivering superior conduction efficiency and thermal margin for 150W-class through-hole power stages.

Availability

IRF640NSPBF is available at Aetrix Electronics and suitable for switch-mode power supplies, motor drives, DC-DC converters, and industrial relay drivers requiring stable component supply across extended production lifecycles.

Supply support for IRF640NSPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon-based power devices.

The IRF640NSPBF belongs to Infineon's legacy HEXFET® power MOSFET product line, designed specifically for high-reliability, medium-power switching applications demanding ruggedness, low conduction loss, and ease of paralleling in industrial and commercial power systems.

FAQ

Is IRF640NSPBF pin-compatible with IRF640NPbF?

Yes - both share identical TO-220AB pinout (Drain-Tab, Gate, Source), same die and electrical specs, and differ only in packaging compliance: IRF640NSPBF is lead-free with matte tin plating, while IRF640NPbF contains lead. Mechanical mounting and PCB footprint are fully interchangeable.

What is the maximum recommended gate drive voltage for reliable operation?

The absolute maximum V_GS is ±20V, but reliable long-term operation uses 10V–15V. Driving at 10V ensures full enhancement (R_DS(on) = 0.15Ω), while exceeding 15V increases gate oxide stress risk without meaningful on-resistance improvement.

Can IRF640NSPBF be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (0.25V/°C V_BR drift) and low Q_gd/Q_g ratio enable stable current sharing. Use matched gate resistors (≤2.5Ω) and symmetrical PCB layout to minimize dynamic imbalance and thermal runaway risk.

Does the body diode support continuous bidirectional current in H-bridge operation?

No - the body diode is rated for pulsed source current (I_SM) only, not continuous conduction. In H-bridge freewheeling, it conducts briefly during dead-time; sustained reverse current requires external diodes or synchronous FETs with optimized Q_rr.

IRF640NSPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 150mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 67 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1160 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF640NSPBF FAQ

1.How can I place an order for IRF640NSPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF640NSPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF640NSPBF reliable?

The price and inventory of IRF640NSPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF640NSPBF is usually 5 days.

3.What payment methods are accepted for IRF640NSPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF640NSPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF640NSPBF?

IRF640NSPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF640NSPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF640NSPBF?

For technical support, including IRF640NSPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF640NSPBF requirements.

6.How does Aetrix verify that IRF640NSPBF is sourced from the original manufacturer or authorized distributors?

All IRF640NSPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF640NSPBF meets industry standards.

7.What is the process for return or replacement of IRF640NSPBF?

All IRF640NSPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF640NSPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF640NSPBF part is unused and in its original packaging.

Return procedure for IRF640NSPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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