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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF640NSTRRPBF

Name: IRF640NSTRRPBF
Brand: Infineon Technologies
SKU: IRF640NSTRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF640NSTRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF640NSTRRPBF.pdf

Description:: MOSFET N-CH 200V 18A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF640NSTRRPBF from Infineon Technologies (formerly International Rectifier) is a 200V, 18A N-channel enhancement-mode power MOSFET in TO-220AB package, featuring 0.15Ω R_DS(on) at V_GS = 10V, 150W power dissipation, and full avalanche rating. It serves as a high-efficiency switching element in DC-DC converters, motor drives, and AC mains-switching circuits operating up to 175°C junction temperature.

For engineers reviewing the IRF640NSTRRPBF datasheet, IRF640NSTRRPBF pinout, IRF640NSTRRPBF application, or IRF640NSTRRPBF equivalent, key selection criteria include its 200V V_DSS, 0.15Ω on-resistance, 67nC total gate charge, fast 19ns rise time, and TO-220AB thermal performance with 1.0°C/W R_θJC.

Technical Context

This HEXFET® fifth-generation MOSFET employs advanced silicon processing for low specific on-resistance and robust unclamped inductive switching capability. Its gate threshold voltage (2.0–4.0V) enables direct TTL/CMOS drive, while 33nC Miller charge and 11nC gate-to-source charge support efficient hard-switching at frequencies up to several hundred kHz.

The integrated body diode exhibits 167–251ns reverse recovery time and 929–1394nC Q_rr under 100A/µs di/dt, making it suitable for freewheeling and synchronous rectification where controlled diode turn-off is required. Thermal design leverages the TO-220AB's 1.0°C/W junction-to-case resistance and 40°C/W PCB-mounted junction-to-ambient rating.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	200V - Maximum blocking voltage before avalanche; sets upper limit for DC bus or AC peak voltage handling
R_DS(on)	0.15Ω @ V_GS=10V, I_D=11A - Determines conduction loss (P_cond = I²×R) in continuous-current applications
I_D (T_C=25°C)	18A - Continuous drain current rating at case temperature 25°C; derates linearly above 25°C
Q_g	67nC - Total gate charge defining driver strength requirement and switching energy loss
t_r	19ns - Rise time at V_DD=100V, I_D=11A, R_G=2.5Ω; impacts turn-on transition loss and EMI profile
E_AS	247mJ - Single-pulse avalanche energy rating; enables reliable operation under inductive load switching stress
R_θJC	1.0°C/W - Junction-to-case thermal resistance; defines minimum heatsink interface requirement for 150W dissipation

Pinout & Package

IRF640NSTRRPBF uses the standard TO-220AB through-hole package with isolated tab (drain-connected), offering mechanical robustness, low-cost mounting, and compatibility with industry-standard heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying terminal, electrically connected to metal tab	Must be electrically isolated from heatsink unless system ground reference permits; primary path for high-side or low-side switching current
Gate	Control electrode for channel formation	High-impedance input requiring <100nA leakage control; sensitive to ESD; requires gate resistor for dV/dt immunity
Source	Reference node for gate drive and current return path	Serves as common reference for gate drive circuitry; carries full load current in low-side configuration

Key Features

Feature	Design Value
Fully avalanche rated	247mJ single-pulse energy tolerance enables reliable unclamped inductive switching without external snubbers
Low R_DS(on)	0.15Ω minimizes conduction losses in high-current DC-DC stages and motor phase legs
Fast switching	19ns rise / 5.5ns fall times reduce transition losses in SMPS operating >100kHz
TTL/CMOS compatible	2.0–4.0V V_GS(th) allows direct drive from microcontrollers and logic-level gate drivers
High temperature operation	Junction range –55°C to +175°C supports under-hood automotive and industrial ambient environments

Applications

Switch-Mode Power Supply

Motor Drive Half-Bridge

Use Scenario: Primary-side switch in 100–500W offline flyback or forward converters.

IC Role / Device Role / Timing Role: High-voltage, high-current switching element turning on/off 50–200kHz PWM waveform.

Use Value: 200V V_DSS safely handles reflected output voltage plus leakage spike; 0.15Ω R_DS(on) keeps conduction loss below 1.5W at 11A RMS.

Use Scenario: Low-side switch in brushed DC motor H-bridge driving 12–48V, 10A loads.

IC Role / Device Role / Timing Role: Ground-referenced power switch controlling motor direction and PWM speed.

Use Value: TTL-compatible gate threshold simplifies microcontroller interfacing; 150W PD rating accommodates short-term stall currents.

AC Solid-State Relay

LED Constant-Current Driver

Use Scenario: Zero-crossing or random-phase AC switching for lighting and heating control.

IC Role / Device Role / Timing Role: Bidirectional AC switching via back-to-back configuration or triac replacement.

Use Value: 175°C max junction temperature ensures reliability during sustained 60Hz half-cycle conduction; 247mJ E_AS absorbs inductive kickback from transformer loads.

Use Scenario: Buck-regulated constant-current stage for high-brightness LED strings (36–72V).

IC Role / Device Role / Timing Role: Synchronous rectifier or main PWM switch regulating average LED current.

Use Value: 67nC Q_g enables efficient gate drive with low-power controllers; 1.0°C/W R_θJC supports compact heatsinking in enclosed luminaires.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM60FD	600V V_DSS, 0.32Ω R_DS(on), 20A I_D, DPAK package	Higher voltage rating but higher on-resistance and surface-mount only; lower thermal mass	Select when 600V blocking is required and PCB space constraints favor SMT over through-hole
IXTP18N20D2	200V V_DSS, 0.14Ω R_DS(on), 18A I_D, TO-220FP (full-pack) package	Same voltage/current specs but non-isolated tab; slightly lower R_DS(on); no drain-tab isolation	Choose when heatsink grounding is acceptable and minimal on-resistance is prioritized over electrical isolation

Compared with STP20NM60FD and IXTP18N20D2, IRF640NSTRRPBF offers optimal balance of 200V rating, 0.15Ω on-resistance, isolated TO-220AB packaging, and proven avalanche ruggedness-making it preferred for cost-sensitive, thermally demanding through-hole power stages where drain isolation is mandatory.

Availability

IRF640NSTRRPBF is available at Aetrix Electronics and suitable for switch-mode power supplies, motor drives, solid-state relays, and LED drivers requiring stable component supply across industrial and commercial production cycles.

Supply support for IRF640NSTRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon-based power devices.

The IRF640NSTRRPBF belongs to Infineon's legacy HEXFET® power MOSFET product line, engineered for high-reliability, high-efficiency switching in commercial and industrial power conversion systems.

FAQ

Is IRF640NSTRRPBF lead-free and RoHS compliant?

Yes, the "PbF" suffix confirms IRF640NSTRRPBF is lead-free and fully RoHS 6/6 compliant. It meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) and has been qualified per IPC/JEDEC J-STD-002B for solderability. The device uses matte tin plating on leads and complies with EU Directive 2011/65/EU.

Can IRF640NSTRRPBF be used in parallel configurations?

Yes, IRF640NSTRRPBF supports paralleling due to its positive R_DS(on) temperature coefficient (normalized R_DS(on) increases with temperature), enabling inherent current sharing. Designers must match gate drive impedance, minimize source inductance imbalance, and ensure uniform heatsinking to avoid thermal runaway.

What is the maximum safe operating area (SOA) limitation at 100°C case temperature?

At T_C = 100°C, the SOA is limited by R_DS(on) conduction (I_D ≤ 13A continuous) and pulse width. For 10ms pulses, maximum V_DS is ~120V at 18A; for 100µs pulses, it extends to ~200V at 72A. Refer to Figure 4 in the official datasheet for precise SOA boundary curves.

Does the body diode support continuous conduction mode (CCM) in synchronous buck converters?

No - the body diode is not optimized for CCM synchronous rectification. Its 167–251ns t_rr and 929–1394nC Q_rr cause significant reverse recovery loss and voltage overshoot. For CCM operation, use a dedicated Schottky or GaN FET as the synchronous rectifier; IRF640NSTRRPBF is best suited for discontinuous conduction mode (DCM) or as the high-side switch only.

IRF640NSTRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 150mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 67 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1160 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF640NSTRRPBF FAQ

1.How can I place an order for IRF640NSTRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF640NSTRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF640NSTRRPBF reliable?

The price and inventory of IRF640NSTRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF640NSTRRPBF is usually 5 days.

3.What payment methods are accepted for IRF640NSTRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF640NSTRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF640NSTRRPBF?

IRF640NSTRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF640NSTRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF640NSTRRPBF?

For technical support, including IRF640NSTRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF640NSTRRPBF requirements.

6.How does Aetrix verify that IRF640NSTRRPBF is sourced from the original manufacturer or authorized distributors?

All IRF640NSTRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF640NSTRRPBF meets industry standards.

7.What is the process for return or replacement of IRF640NSTRRPBF?

All IRF640NSTRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF640NSTRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF640NSTRRPBF part is unused and in its original packaging.

Return procedure for IRF640NSTRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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