Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6603TR1

Name: IRF6603TR1
Brand: Infineon Technologies
SKU: IRF6603TR1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF6603TR1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MT

Datasheet:: IRF6603TR1.pdf

Description:: MOSFET N-CH 30V 27A DIRECTFET

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:4,289

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF6603TR1 from Infineon Technologies is a 30 V, 92 A N-channel Power MOSFET in DirectFET® packaging, optimized as a synchronous buck converter low-side FET for CPU core DC-DC applications. It delivers 3.4 mΩ R_DS(on) at V_GS = 10 V, 48 nC total gate charge, and high C_dv/dt immunity - enabling high-efficiency operation in high-frequency, high-current point-of-load converters powering modern processors.

For engineers reviewing the IRF6603TR1 datasheet, IRF6603TR1 pinout, IRF6603TR1 application, or IRF6603TR1 equivalent, key selection criteria include verified R_DS(on) at 4.5 V (5.5 mΩ), Q_gd/Q_gs1 ratio for C_dv/dt immunity, dual-sided cooling capability, and SO-8 footprint compatibility with <0.7 mm profile - all critical for thermal-limited, space-constrained VRM designs.

Technical Context

The IRF6603TR1 employs trench-gate HEXFET silicon in a copper-clad DirectFET package with top- and bottom-side thermal pads, enabling dual-sided PCB cooling and reducing R_θJC to 3.0 °C/W. Its gate charge profile (Q_gs1 = 15.6 nC, Q_gd = 16.1 nC) minimizes C_dv/dt-induced turn-on risk in synchronous buck topologies where the drain swings between 0 V and input voltage.

It is characterized for operation at T_J = 150 °C with guaranteed R_DS(on) ≤ 5.5 mΩ at V_GS = 4.5 V and ID = 20 A, and features a body diode with t_rr = 45–68 ns and Q_rr = 60–90 nC - parameters directly specified for synchronous rectification efficiency and shoot-through avoidance.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 12 V and 24 V input DC-DC stages in CPU VRMs.
R_DS(on) @ V_GS = 10 V	3.4 mΩ - Enables <1.5 W conduction loss at 92 A continuous drain current in low-side FET position.
R_DS(on) @ V_GS = 4.5 V	5.5 mΩ - Validated performance at typical gate drive levels of modern PWM controllers, ensuring robust turn-on under light-load conditions.
Q_g	48 nC - Total gate charge determines driver strength requirement and switching loss contribution in high-frequency (>500 kHz) operation.
Q_gd/Q_gs1	1.03 - Low ratio reduces susceptibility to parasitic turn-on during high dV/dt node transitions in synchronous buck converters.
R_θJC	3.0 °C/W - Junction-to-case thermal resistance enables >80% thermal improvement over prior SO-8 MOSFETs when using dual-sided cooling.
t_rr	45–68 ns - Body diode reverse recovery time directly impacts crossover loss and EMI in hard-switched synchronous rectification.

Pinout & Package

IRF6603TR1 uses the DirectFET® M6 package - a leadless, copper-clip-based surface-mount package with top-side source/ground pad and bottom-side drain pad, measuring 5.0 × 6.0 mm footprint and 0.65 mm maximum height. It is mechanically and thermally optimized for dual-sided PCB cooling and compatible with standard SO-8 layout geometries and reflow soldering processes.

Pin/Terminal	Circuit Role	Design Meaning
Top Pad (Source)	Source terminal (S)	Primary current return path and thermal interface for top-side heatsinking or ground plane coupling.
Bottom Pad (Drain)	Drain terminal (D)	Main power output path; electrically and thermally connected to PCB copper pour for low-inductance, high-current routing.
Side Terminal (Gate)	Gate terminal (G)	Control input with low gate loop inductance (<0.5 nH) due to short, wide copper clip connection - critical for fast, oscillation-free switching.

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g figure-of-merit	163 mΩ·nC - balances conduction and switching losses for optimal efficiency across 300 kHz–1 MHz VRM operating range.
High C_dv/dt immunity	Guaranteed operation at >50 V/ns dV/dt - prevents false turn-on during high-slew-rate node transitions in synchronous buck converters.
Dual-sided cooling architecture	Top-source + bottom-drain thermal pads - enables simultaneous heat extraction from both PCB sides, reducing system-level thermal resistance by up to 80%.
SO-8 footprint compatibility	5.0 × 6.0 mm outline - allows drop-in replacement in existing layouts without redesign, supporting rapid migration from legacy packages.
Low-profile construction	0.65 mm max height - meets strict Z-height constraints in ultra-thin computing and server motherboard applications.

Applications

Server CPU Voltage Regulator

Laptop Core Power Delivery

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.3 V at up to 200 A to Intel/AMD server CPUs.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier FET in each phase, switching at 500–1000 kHz with precise dead-time control.

Use Value: 3.4 mΩ R_DS(on) and 48 nC Q_g reduce per-phase loss to <1.2 W, enabling >92% full-load efficiency while maintaining <70 °C junction temperature.

Use Scenario: Compact 2–3 phase VRM on thin-and-light laptop motherboards with strict height limits (<0.8 mm).

IC Role / Device Role / Timing Role: Low-side FET handling 40–80 A peak current per phase, driven by integrated PWM controller with 4.5 V gate drive.

Use Value: 0.65 mm profile and SO-8 compatibility allow direct integration into space-constrained layouts; 5.5 mΩ R_DS(on) @ 4.5 V ensures stable regulation under dynamic load transients.

AI Accelerator Board Power

High-Density GPU VRM

Use Scenario: Point-of-load converter delivering 0.75–0.9 V at 120+ A to FPGA or ASIC AI accelerators in datacenter modules.

IC Role / Device Role / Timing Role: Synchronous rectifier in interleaved multiphase topology with >1 MHz switching frequency and tight thermal management.

Use Value: Dual-sided cooling capability enables >30 W/cm² power density without forced airflow; Q_gd/Q_gs1 = 1.03 suppresses shoot-through during 100 V/µs node transitions.

Use Scenario: Multi-phase VRM on gaming/desktop GPU PCBs requiring >400 A total output with minimal board area.

IC Role / Device Role / Timing Role: Low-side FET in 8–12 phase design, operating at 600 kHz with ceramic output capacitors and polymer chokes.

Use Value: 92 A continuous rating and 3.0 °C/W R_θJC support >60 A/phase current density; low Crss (520 pF) minimizes Miller-induced gate oscillation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous buck low-side FET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6613TR1	R_DS(on) = 2.7 mΩ @ 10 V, Q_g = 58 nC, same DirectFET M6 package	Higher conduction efficiency but increased switching loss and gate drive demand	Preferred for fixed-frequency, high-current applications where conduction loss dominates (e.g., server VRMs >150 A).
SiR626DP-T1-GE3	R_DS(on) = 3.0 mΩ @ 10 V, Q_g = 42 nC, PowerPAK® 5×6 package with single-sided cooling	Lower gate charge but no top-side thermal interface; higher R_θJA (35 °C/W vs. 12.5 °C/W)	Better for cost-sensitive, lower-power designs where PCB real estate permits larger thermal pads on one side only.

Compared with IRF6603TR1, IRF6613TR1 trades higher gate charge for lower R_DS(on), favoring steady-state efficiency, while SiR626DP offers faster switching but sacrifices thermal headroom - making IRF6603TR1 the balanced choice for thermally constrained, high-dV/dt, multi-phase CPU VRMs.

Availability

IRF6603TR1 is available at Aetrix Electronics and suitable for server CPU voltage regulators, laptop core power delivery, AI accelerator board power, and high-density GPU VRMs requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for IRF6603TR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949 standards.

The IRF6603TR1 belongs to Infineon's DirectFET® Power MOSFET product line, engineered specifically for high-efficiency, high-density DC-DC conversion in computing and communications infrastructure where thermal, electrical, and mechanical constraints converge.

FAQ

What is the maximum continuous drain current for IRF6603TR1 at 70°C ambient?

The IRF6603TR1 supports 22 A continuous drain current at T_A = 70°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This value assumes standard JEDEC 2-layer PCB mounting with 1 in² copper area per pad and natural convection cooling - actual current capability increases significantly with dual-sided cooling and forced airflow.

Does IRF6603TR1 require a negative gate turn-off voltage?

No. The IRF6603TR1 has a gate threshold voltage (V_GS(th)) of 1.0–2.0 V and is fully enhanced at V_GS = 4.5 V. Negative gate drive is not required or recommended; standard 0 V to 12 V gate drive signals are sufficient for reliable turn-on and turn-off, and its high C_dv/dt immunity eliminates need for active gate clamping in most synchronous buck layouts.

Can IRF6603TR1 be used in parallel configurations?

Yes. Its positive R_DS(on) temperature coefficient (2.4 mΩ typ. at 25°C, rising to 3.4 mΩ at 100°C) ensures inherent current sharing stability. Parallel operation is validated in multi-phase VRMs; however, matched gate drive loop inductance and symmetrical PCB layout are essential to avoid dynamic current imbalance during switching transitions.

Is the body diode of IRF6603TR1 suitable for asynchronous operation?

The body diode is characterized with V_SD = 1.0–1.3 V at I_S = 20 A and t_rr = 45–68 ns, making it usable in asynchronous mode at low frequencies (<200 kHz) and light loads. However, its Q_rr = 60–90 nC and associated recovery loss make it unsuitable for high-frequency asynchronous use - synchronous rectification is strongly recommended for efficiency-critical applications.

IRF6603TR1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MT

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 27A (Ta), 92A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.4mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 72 nC @ 4.5 V

Vgs (Max):: +20V, -12V

Input Capacitance (Ciss) (Max) @ Vds:: 6590 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3.6W (Ta), 42W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MT

IRF6603TR1 FAQ

1.How can I place an order for IRF6603TR1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6603TR1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6603TR1 reliable?

The price and inventory of IRF6603TR1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6603TR1 is usually 5 days.

3.What payment methods are accepted for IRF6603TR1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6603TR1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6603TR1?

IRF6603TR1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6603TR1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6603TR1?

For technical support, including IRF6603TR1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6603TR1 requirements.

6.How does Aetrix verify that IRF6603TR1 is sourced from the original manufacturer or authorized distributors?

All IRF6603TR1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6603TR1 meets industry standards.

7.What is the process for return or replacement of IRF6603TR1?

All IRF6603TR1 units undergo pre-shipment inspection (PSI). If there is an issue with IRF6603TR1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6603TR1 part is unused and in its original packaging.

Return procedure for IRF6603TR1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…