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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6607

Name: IRF6607
Brand: Infineon Technologies
SKU: IRF6607
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6607

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MT

Datasheet:: IRF6607.pdf

Description:: MOSFET N-CH 30V 27A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6607 from Infineon Technologies (acquired International Rectifier) is a 30V N-channel Power MOSFET in DirectFET® packaging, optimized as a synchronous rectifier FET in high-frequency CPU core DC-DC converters. It delivers 3.3 mΩ R_DS(on) at V_GS = 10 V, 50 nC total gate charge, and >80% improved thermal resistance versus prior solutions via dual-sided cooling.

For engineers reviewing the IRF6607 datasheet, IRF6607 pinout, IRF6607 application, or IRF6607 equivalent, key selection criteria include C_dv/dt immunity for shoot-through prevention, ultra-low package inductance for switching integrity, R_DS(on) vs. temperature stability, and compatibility with SO-8 layout footprints despite its 0.7 mm profile.

Technical Context

The IRF6607 employs trench-gated HEXFET silicon with optimized charge distribution to minimize Q_gd/Q_gs1 ratio-critical for suppressing C_dv/dt-induced turn-on in synchronous buck high-side switching nodes. Its gate threshold voltage is 1.0–2.5 V with negative temperature coefficient (−5.3 mV/°C), enabling stable operation across −40°C to +150°C junction range.

Thermally, it features 1.0°C/W R_θJ-PCB (junction-to-PCB mounted) and 3.0°C/W R_θJC, enabled by copper top-side source connection and bottom-side drain pad-supporting dual-sided cooling in compact VRM modules where board space and thermal headroom are constrained.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage compatible with 12 V input VRMs and 3-phase CPU core supplies.
R_DS(on) max	3.3 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 18 A RMS in 1.0 V/150 A processor rails.
Q_g	50 nC - Low gate drive energy reduces controller loading and enables efficient 500 kHz–1 MHz switching.
C_dv/dt immunity	High - Validated for synchronous FET use with fast dV/dt edges (>10 V/ns) without spurious turn-on.
R_θJ-PCB	1.0 °C/W - Enables direct PCB copper pour cooling without heatsink, critical for low-profile server DIMM power stages.
I_D @ T_C = 25°C	94 A - Supports high-current, single-phase CPU core phases with minimal parallel devices.
Q_rr	54–81 nC - Body diode recovery charge minimized to reduce cross-conduction loss in hard-switched synchronous rectification.

Pinout & Package

IRF6607 uses the DirectFET® M6 package: top-side source-connected copper clip, bottom-side drain-connected exposed pad, no traditional leads. Height ≤0.7 mm; footprint matches SO-8 but with enhanced thermal and electrical performance.

Pin/Terminal	Circuit Role	Design Meaning
Top-side copper area	Source (S)	Low-inductance, high-current source connection; enables dual-sided cooling and reduces loop inductance.
Bottom-side exposed pad	Drain (D)	Primary heat path to PCB; electrically connects to drain node-requires isolation from ground plane.
Side terminals (2)	Gate (G)	Low-capacitance gate interface; optimized for fast edge rates and minimal ringing in high-dV/dt environments.

Key Features

Feature	Design Value
DirectFET® packaging	0.7 mm profile with SO-8 footprint-enables drop-in replacement in legacy layouts while delivering 80% lower R_θJA.
Ultra-low Q_gd/Q_gs1 ratio	Minimizes Miller-induced gate voltage spikes during high dV/dt transitions-prevents shoot-through in synchronous buck topologies.
Dual-sided cooling capability	Top-source + bottom-drain thermal paths allow simultaneous heatsink and PCB copper cooling-critical for >100 A/mm² power density.
Optimized body diode	Q_rr = 54–81 nC and t_rr = 46–69 ns-reduces reverse recovery loss transfer to control FET and improves light-load efficiency.

Applications

Server CPU Core VRM

Laptop Voltage Regulator Module

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.3 V to Intel/AMD CPUs at up to 200 A per phase.

IC Role / Device Role / Timing Role: Synchronous rectifier (low-side FET) handling continuous 94 A conduction with sub-10 ns switching transitions.

Use Value: 3.3 mΩ R_DS(on) and 1.0°C/W R_θJ-PCB enable >95% efficiency at full load while maintaining <70°C case temperature.

Use Scenario: Thin-profile notebook VRM requiring <0.8 mm height and high thermal margin under burst load conditions.

IC Role / Device Role / Timing Role: Low-side switch in 3-phase interleaved buck delivering 1.0 V @ 60 A to mobile APUs.

Use Value: 0.7 mm DirectFET package fits within mechanical envelope; dual-sided cooling sustains 120% rated current for 100 ms without derating.

GPU Power Delivery

AI Accelerator Board Power Stage

Use Scenario: Discrete GPU VRM with dynamic load steps exceeding 300 A/µs during compute workloads.

IC Role / Device Role / Timing Role: Synchronous FET operating at 1 MHz with strict C_dv/dt immunity to prevent false turn-on during rapid V_SW transitions.

Use Value: High C_dv/dt immunity and 16 nC Q_gd ensure robust operation without external gate clamping networks.

Use Scenario: Power stage for FPGA-based AI inference accelerators with tight thermal constraints and high reliability requirements.

IC Role / Device Role / Timing Role: Primary output switch in multiphase buck supplying 0.75 V @ 180 A to ASIC fabric.

Use Value: R_DS(on) drift <10% from −40°C to +150°C ensures consistent regulation across ambient extremes and transient loads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous rectifier MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BSC010N04LS	R_DS(on) = 1.0 mΩ @ 4.5 V, larger PQFN 3.3×3.3 mm package, higher Q_g (62 nC)	Better low-V_GS drive compatibility but requires PCB redesign; less suitable for SO-8 footprint reuse	Select when gate drive voltage is limited to 4.5 V and layout flexibility allows larger footprint.
Vishay SiR626DP	R_DS(on) = 3.7 mΩ @ 10 V, TrenchFET Gen IV, 1.1 mm height, no top-side source	Single-sided cooling only; higher R_θJA (12.5°C/W) limits power density in ultra-thin designs	Select when cost sensitivity outweighs thermal performance and height constraints are relaxed.

Compared with BSC010N04LS and SiR626DP, the IRF6607 uniquely balances SO-8 layout compatibility, 0.7 mm height, and dual-sided cooling-making it optimal for space-constrained, high-efficiency CPU/GPU VRMs where thermal path optimization is non-negotiable.

Availability

IRF6607 is available at Aetrix Electronics and suitable for server CPU core VRMs, laptop voltage regulator modules, and AI accelerator board power stages requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for IRF6607 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF6607 belongs to Infineon's DirectFET® Power MOSFET product line, engineered specifically for high-frequency, high-density DC-DC conversion in computing and data center power systems.

FAQ

Is IRF6607 suitable for 4.5 V gate drive in synchronous buck topologies?

Yes. The IRF6607 specifies R_DS(on) = 4.4 mΩ at V_GS = 4.5 V and maintains stable threshold voltage down to −40°C. Its low Q_gd/Q_gs1 ratio ensures reliable turn-off even with marginal gate drive margins, making it viable for 4.5 V controller interfaces common in modern VRMs.

Does IRF6607 require external gate resistors for EMI control?

No external gate resistor is required for basic operation, but a 2–5 Ω series resistor is recommended to dampen high-frequency ringing caused by PCB trace inductance interacting with low package inductance. This improves EMI compliance without compromising switching speed in 500 kHz–1 MHz applications.

Can IRF6607 be used as a control FET (high-side switch) in buck converters?

No. The IRF6607 is optimized as a synchronous rectifier (low-side FET) with asymmetric charge characteristics and body diode parameters tailored for freewheeling operation. Its gate threshold and C_dv/dt behavior are not designed for high-side bootstrap gate drive or floating bias requirements.

What is the maximum allowable PCB copper area for bottom-side cooling of IRF6607?

Infineon recommends ≥200 mm² of 2-oz copper connected to the bottom-side drain pad via ≥6 thermal vias (0.3 mm diameter, spaced ≤1.2 mm apart). Larger copper areas improve R_θJ-PCB further, but diminishing returns occur beyond 400 mm² due to spreading resistance limits.

IRF6607 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MT

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 27A (Ta), 94A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 7V

Rds On (Max) @ Id, Vgs:: 3.3mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 75 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 6930 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3.6W (Ta), 42W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MT

IRF6607 FAQ

1.How can I place an order for IRF6607 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6607 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6607 reliable?

The price and inventory of IRF6607 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6607 is usually 5 days.

3.What payment methods are accepted for IRF6607?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6607 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6607?

IRF6607 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6607 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6607?

For technical support, including IRF6607 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6607 requirements.

6.How does Aetrix verify that IRF6607 is sourced from the original manufacturer or authorized distributors?

All IRF6607 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6607 meets industry standards.

7.What is the process for return or replacement of IRF6607?

All IRF6607 units undergo pre-shipment inspection (PSI). If there is an issue with IRF6607, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6607 part is unused and in its original packaging.

Return procedure for IRF6607:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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