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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6609

Name: IRF6609
Brand: Infineon Technologies
SKU: IRF6609
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6609

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MT

Datasheet:: IRF6609.pdf

Description:: MOSFET N-CH 20V 31A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Inventory:8,095

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Product details

Overview

IRF6609 from Infineon Technologies (formerly International Rectifier) is a 20V N-channel enhancement-mode Power MOSFET in DirectFET® MT package, optimized as a synchronous rectifier FET in high-frequency DC-DC converters. It delivers 2.0 mΩ R_DS(on) at V_GS = 10 V, 46 nC total gate charge, and 1.4 °C/W junction-to-case thermal resistance - enabling high-efficiency 12 V input buck converters for modern processors.

For engineers reviewing the IRF6609 datasheet, IRF6609 pinout, IRF6609 application, or IRF6609 equivalent, key selection criteria include C_dv/dt immunity for noise-resistant gate control, dual-sided cooling compatibility for thermal management in dense power stages, and low-profile (0.7 mm) surface-mount integration without layout redesign.

Technical Context

The IRF6609 employs trench-gate HEXFET silicon with DirectFET MT packaging to minimize both conduction loss (R_DS(on) = 2.0 mΩ @ 10 V) and switching loss (Q_gd = 15 nC, Q_sw = 20 nC). Its gate threshold voltage (1.55–2.45 V) and negative temperature coefficient (−6.1 mV/°C) support stable turn-on behavior across operating temperature.

Designed specifically for synchronous buck topologies, it features high C_dv/dt immunity to prevent false turn-on during high-slew-rate node transitions, and integrates a low-V_SD (0.80–1.2 V) body diode with 32–48 ns reverse recovery time for efficient freewheeling operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	20 V - Maximum blocking voltage compatible with 12 V bus systems and transient margin.
R_DS(on) max	2.0 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 31 A continuous drain current.
Q_g	46 nC - Low gate drive energy requirement supports high-frequency PWM up to 1 MHz.
C_iss	6290 pF - Optimized input capacitance balances switching speed and EMI control.
R_θJC	1.4 °C/W - Enables direct heatsink attachment on top-side for dual-sided thermal extraction.
V_GS(th)	1.55–2.45 V - Ensures robust turn-on with standard 3.3 V or 5 V gate drivers.
I_D @ T_C = 25°C	31 A - Continuous current rating under case-cooled conditions typical of VRM modules.

Pinout & Package

IRF6609 uses the DirectFET® MT package - a copper-can, top-side source-connected, bottom-drain-exposed surface-mount outline with 0.7 mm profile and SO-8 footprint compatibility. Thermal path is optimized via exposed drain pad on PCB bottom and source terminals on top.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Bottom Pad)	Main current path output / heat sink interface	Exposed copper pad soldered to PCB ground plane or heatsink for primary thermal dissipation.
Source (Top Terminals)	Return path for load current / gate reference	Four top-side copper terminals connected internally to source; provide low-inductance return and gate reference stability.
Gate (Top Terminal)	Control electrode for channel modulation	Single top-side gate pad; designed for short, low-inductance routing to minimize ringing and overshoot.

Key Features

Feature	Design Value
Ultra-low R_DS(on) + Q_g product	92 mΩ·nC - Reduces combined conduction and switching losses in high-duty-cycle applications.
Dual-sided cooling architecture	1.4 °C/W R_θJC + 1.0 °C/W R_θJ-PCB - Enables >80% thermal resistance improvement over SO-8 MOSFETs.
C_dv/dt-induced turn-on immunity	Validated in 12 V synchronous buck - Prevents spurious conduction during high dV/dt node transitions.
Low-profile DirectFET MT package	0.7 mm height - Fits under low-clearance shields and enables stacked power stage layouts.

Applications

Server VRMs

GPU Power Delivery

Use Scenario: High-current, multi-phase buck converters supplying 0.8–1.2 V to x86 and ARM server CPUs.

IC Role / Device Role / Timing Role: Synchronous rectifier FET in low-side position, switching at 300–1000 kHz with precise dead-time control.

Use Value: 2.0 mΩ R_DS(on) and 46 nC Q_g reduce power loss by ≥15% vs. legacy SO-8 MOSFETs at 30 A per phase.

Use Scenario: Compact, high-density power stages on graphics card PCBs with strict height constraints.

IC Role / Device Role / Timing Role: Bottom-FET in interleaved 2–4 phase buck regulators powering GDDR6 memory and GPU cores.

Use Value: 0.7 mm profile allows placement beneath GPU die and thermal interface material without mechanical interference.

Telecom DC-DC Modules

AI Accelerator Boards

Use Scenario: 48 V to 12 V intermediate bus converters feeding point-of-load regulators in base station equipment.

IC Role / Device Role / Timing Role: Primary synchronous rectifier in secondary-side synchronous rectification stage.

Use Value: Dual-sided cooling maintains T_J < 105°C at 25 A continuous with natural convection, eliminating need for forced airflow.

Use Scenario: High-current power delivery networks on PCIe-based AI inference accelerators with 300+ W TDP.

IC Role / Device Role / Timing Role: Low-side switch in multiphase buck converters delivering >500 A aggregate current.

Use Value: 1.4 °C/W R_θJC enables direct top-side heatsink mounting, reducing thermal bottleneck in tightly packed FPGA/GPU clusters.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous rectifier MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6616	R_DS(on) = 2.7 mΩ @ 10 V; Q_g = 38 nC; same DirectFET MT package	Slightly higher conduction loss but lower gate charge - better for very high-frequency (>1 MHz) light-load efficiency.	Select when prioritizing gate drive efficiency over peak current capability.
SiR626DP	R_DS(on) = 1.8 mΩ @ 10 V; Q_g = 52 nC; PowerPAK® 1212-8 package	Lower R_DS(on) but higher Q_g and no top-side source - limits dual-sided cooling and increases layout complexity.	Select only if board-level thermal design accommodates single-sided cooling and higher gate drive power.

Compared with IRF6616 and SiR626DP, the IRF6609 uniquely balances ultra-low R_DS(on), moderate Q_g, and dual-sided thermal access - making it optimal for space-constrained, high-current synchronous buck designs where both conduction loss and thermal density are critical.

Availability

IRF6609 is available at Aetrix Electronics and suitable for server VRMs, GPU power delivery, telecom DC-DC modules, and AI accelerator boards requiring stable component supply and long-term production continuity.

Supply support for IRF6609 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon and wide-bandgap device innovation.

The IRF6609 belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency synchronous rectification in advanced computing and communications power supplies.

FAQ

What is the maximum continuous drain current for IRF6609 at 70°C ambient?

The IRF6609 supports 15 A continuous drain current at T_A = 70°C with standard PCB mounting (no heatsink), based on its 45 °C/W junction-to-ambient thermal resistance and 150°C maximum junction temperature. This rating assumes adequate copper area and airflow per application note AN-1035.

Does IRF6609 require a gate resistor for reliable operation?

Yes - a 2–10 Ω gate resistor is recommended to dampen ringing caused by low package inductance and PCB trace inductance. The IRF6609's ultra-low Q_gd/Q_gs ratio makes it sensitive to gate oscillation; proper gate resistor selection prevents false turn-on and ensures clean switching edges.

Can IRF6609 be used in linear mode (as a pass transistor)?

No - the IRF6609 is not characterized or rated for linear (saturation) operation. Its Safe Operating Area (SOA) curve shows rapid derating above 10 V V_DS at high current, and its R_DS(on) temperature coefficient is not optimized for stable bias in analog pass applications.

Is the body diode of IRF6609 suitable for reverse recovery in hard-switched topologies?

Yes - the body diode has t_rr = 32–48 ns and Q_rr = 26–39 nC at I_S = 25 A, making it suitable for synchronous rectification in hard-switched buck converters up to 500 kHz. However, zero-voltage switching (ZVS) or active clamp circuits are recommended above that frequency to minimize diode-related losses.

IRF6609 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MT

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 31A (Ta), 150A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2mOhm @ 31A, 10V

Vgs(th) (Max) @ Id:: 2.45V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 69 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6290 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 1.8W (Ta), 89W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MT

IRF6609 FAQ

1.How can I place an order for IRF6609 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6609 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6609 reliable?

The price and inventory of IRF6609 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6609 is usually 5 days.

3.What payment methods are accepted for IRF6609?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6609 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6609?

IRF6609 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6609 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6609?

For technical support, including IRF6609 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6609 requirements.

6.How does Aetrix verify that IRF6609 is sourced from the original manufacturer or authorized distributors?

All IRF6609 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6609 meets industry standards.

7.What is the process for return or replacement of IRF6609?

All IRF6609 units undergo pre-shipment inspection (PSI). If there is an issue with IRF6609, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6609 part is unused and in its original packaging.

Return procedure for IRF6609:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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