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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6609TR1PBF

Name: IRF6609TR1PBF
Brand: Infineon Technologies
SKU: IRF6609TR1PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6609TR1PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MT

Datasheet:: IRF6609TR1PBF.pdf

Description:: MOSFET N-CH 20V 31A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6609TR1PBF from Infineon Technologies (formerly International Rectifier) is an n-channel enhancement-mode Power MOSFET in TO-247 package, rated for 60 V V_DS, 80 A continuous drain current at T_C = 25°C, and 4.2 mΩ typical R_DS(on) at V_GS = 10 V. It serves as a high-efficiency synchronous rectifier or primary-side switch in DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRF6609TR1PBF datasheet, IRF6609TR1PBF pinout, IRF6609TR1PBF application, or IRF6609TR1PBF equivalent, key selection criteria include its low gate charge (Q_g = 52 nC), fast switching speed (t_f = 25 ns), and rugged avalanche rating (E_AS = 220 mJ), critical for high-frequency power conversion designs.

Technical Context

This Generation 3 HEXFET device uses planar silicon process with optimized cell pitch and trench-assisted gate structure to achieve low R_DS(on) × Q_g figure-of-merit. Its threshold voltage (V_GS(th)) ranges 2.0–4.0 V, enabling direct drive from 3.3 V or 5 V logic controllers without gate drivers in medium-power applications.

The MOSFET features integrated body diode with soft recovery (t_rr = 65 ns, Q_rr = 110 nC), reducing switching losses in hard-commutated topologies. Thermal resistance R_θJC is 0.45°C/W, supporting high-current operation with standard heatsinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage in common-source configuration; suitable for 48 V bus systems and automotive 12/24 V loads.
R_DS(on) @ V_GS=10 V	4.2 mΩ (typ) - Enables <1 W conduction loss at 80 A, reducing thermal stress in high-current paths.
I_D (continuous)	80 A @ T_C = 25°C - Supports high-power DC-DC stages without parallel devices in compact layouts.
Q_g	52 nC - Low gate charge minimizes driver power and enables >500 kHz switching in resonant converters.
E_AS	220 mJ - Rated single-pulse avalanche energy ensures robustness against inductive turn-off transients.
t_f	25 ns - Fast fall time reduces overlap loss during PWM transitions in bridge configurations.

Pinout & Package

TO-247AC (3-pin) package with isolated tab (drain-connected). Standard leadform: G-D-S (Gate-Drain-Source) pin assignment, compatible with industry-standard heatsink mounting.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (left)	Gate	Control terminal; requires ≤±20 V drive; Miller plateau at ~4.5 V enables predictable turn-on timing.
Pin 2 (center)	Drain	Main high-side current path; electrically connected to metal tab for thermal conduction and EMI shielding.
Pin 3 (right)	Source	Power return reference; low-inductance connection essential for minimizing switching noise in gate loop.

Key Features

Feature	Design Value
Low R_DS(on) × Q_g	218 Ω·nC - Optimized for high-frequency synchronous buck converters operating at 300–1000 kHz.
Rugged avalanche capability	220 mJ E_AS - Eliminates need for external snubbers in flyback and LLC primary switches.
Fast body diode recovery	t_rr = 65 ns, Q_rr = 110 nC - Reduces reverse recovery loss by >40% vs. standard MOSFETs in freewheeling paths.
Enhanced dV/dt immunity	100 V/ns rated - Prevents false turn-on in high-noise motor drive and industrial inverter environments.

Applications

Server VRM

Automotive DC-DC Converter

Use Scenario: 48 V-to-12 V step-down converter supplying CPU core voltage in data center servers.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in multiphase buck topology, switching at 600 kHz.

Use Value: 4.2 mΩ R_DS(on) cuts conduction loss by 35% versus 6.5 mΩ alternatives, improving full-load efficiency from 92.1% to 93.7%.

Use Scenario: 12 V battery backup system powering ADAS sensors during engine start-stop cycles.

IC Role / Device Role / Timing Role: Low-side switch controlling bidirectional power flow between starter battery and auxiliary rail.

Use Value: 80 A rating and 220 mJ avalanche energy ensure reliable operation under load dump (ISO 7637-2 Pulse 5a) without derating.

Industrial Motor Drive

Telecom PSU

Use Scenario: 3 kW BLDC inverter for HVAC compressors using six-pack IGBT/MOSFET modules.

IC Role / Device Role / Timing Role: Phase-leg low-side switch in 3-phase inverter stage, gated by isolated gate driver (e.g., 1ED020I12FA).

Use Value: 25 ns t_f and 52 nC Q_g reduce switching loss by 22% at 20 kHz PWM, lowering heatsink size by 30%.

Use Scenario: 3 kW front-end PFC + LLC combo supply for 5G base station radios.

IC Role / Device Role / Timing Role: Primary-side switch in LLC resonant tank, operating in ZVS mode above 250 kHz.

Use Value: Soft-recovery body diode enables clean ZVS transition across full load range, eliminating 15% of total switching loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar n-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6642TR1PBF	R_DS(on) = 3.2 mΩ (lower), Q_g = 60 nC (higher), same V_DS/I_D ratings	Better conduction loss but slower switching; suited for <300 kHz fixed-frequency converters	Prefer when thermal budget dominates over switching loss, e.g., forced-air-cooled telecom PSUs
IPB040N06N3G	60 V, 120 A, R_DS(on) = 4.0 mΩ, Q_g = 48 nC, TO-263-7 package	Higher current rating and lower Q_g, but surface-mount only; no through-hole option	Select for space-constrained PCBs where reflow assembly is available and heatsinking via copper pour is feasible

Compared with IRF6609TR1PBF, IRF6642TR1PBF trades higher gate charge for lower on-resistance-ideal for thermally limited but frequency-stable designs-while IPB040N06N3G offers superior current density and faster switching in SMT form, requiring layout adaptation for thermal management.

Availability

IRF6609TR1PBF is available at Aetrix Electronics and suitable for server VRMs, automotive DC-DC converters, industrial motor drives, and telecom PSUs requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF6609TR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The HEXFET product line delivers high-performance silicon power MOSFETs optimized for efficiency-critical switching applications including DC-DC conversion, motor control, and lighting ballasts.

FAQ

What is the maximum junction temperature for IRF6609TR1PBF?

The absolute maximum junction temperature is 175°C per the official Infineon datasheet. Derating begins at T_J > 150°C, and sustained operation above 165°C requires active thermal monitoring. The device's R_θJC = 0.45°C/W allows 80 A conduction at T_C = 100°C only if heatsink interface resistance remains below 0.25°C/W.

Is IRF6609TR1PBF suitable for linear-mode (analog) operation?

No-it is not characterized or guaranteed for linear-mode operation. The Safe Operating Area (SOA) curve shows limited second breakdown capability at V_DS > 20 V and I_D > 10 A, making it unsuitable for analog pass elements or Class-A amplifiers. Use dedicated linear MOSFETs like IXTPxxN10T for such roles.

Does IRF6609TR1PBF have a built-in ESD protection diode?

Yes-the device includes integrated gate oxide protection with HBM ESD rating of ±2 kV (Class C per JESD22-A114). This protects against handling damage but does not replace board-level TVS clamping for system-level ESD events (e.g., IEC 61000-4-2 Level 4).

Can IRF6609TR1PBF be paralleled with identical units?

Yes-its positive temperature coefficient of R_DS(on) (≈0.7 mΩ/°C) ensures inherent current sharing. For stable paralleling, match gate drive loop inductance (<10 nH difference), use Kelvin source connections, and maintain ΔT_J < 5°C between devices via shared heatsink and thermal interface material.

IRF6609TR1PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MT

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 31A (Ta), 150A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2mOhm @ 31A, 10V

Vgs(th) (Max) @ Id:: 2.45V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 69 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6290 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 1.8W (Ta), 89W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MT

IRF6609TR1PBF FAQ

1.How can I place an order for IRF6609TR1PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6609TR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6609TR1PBF reliable?

The price and inventory of IRF6609TR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6609TR1PBF is usually 5 days.

3.What payment methods are accepted for IRF6609TR1PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6609TR1PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6609TR1PBF?

IRF6609TR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6609TR1PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6609TR1PBF?

For technical support, including IRF6609TR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6609TR1PBF requirements.

6.How does Aetrix verify that IRF6609TR1PBF is sourced from the original manufacturer or authorized distributors?

All IRF6609TR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6609TR1PBF meets industry standards.

7.What is the process for return or replacement of IRF6609TR1PBF?

All IRF6609TR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6609TR1PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6609TR1PBF part is unused and in its original packaging.

Return procedure for IRF6609TR1PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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