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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6609TRPBF

Name: IRF6609TRPBF
Brand: Infineon Technologies
SKU: IRF6609TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6609TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MT

Datasheet:: IRF6609TRPBF.pdf

Description:: MOSFET N-CH 20V 31A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6609TRPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode power MOSFET in TO-247AC package, rated for 60 V V_DS, 59 A I_D (T_C = 25°C), and 8.5 mΩ R_DS(on) max at V_GS = 10 V. It serves as a high-efficiency synchronous rectifier or primary-side switch in DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRF6609TRPBF datasheet, IRF6609TRPBF pinout, IRF6609TRPBF application, or IRF6609TRPBF equivalent, key selection criteria include its low gate charge (Q_g = 42 nC), fast switching speed (t_fall = 23 ns), and rugged avalanche rating (E_AS = 230 mJ), critical for high-frequency SMPS and BLDC gate-drive stages.

Technical Context

This Generation 3 HEXFET device uses planar silicon process with optimized cell pitch and trench-assisted channel geometry to achieve low R_DS(on) × Q_g figure-of-merit (FoM = 357 Ω·nC). Its threshold voltage V_GS(th) ranges 2.0–4.0 V, enabling direct drive from 3.3 V or 5 V logic without level-shifting in high-side configurations.

The MOSFET features fully characterized safe operating area (SOA) up to 10 ms, integrated body diode with soft recovery (t_rr = 55 ns, Q_rr = 42 nC), and guaranteed 100% UIS (unclamped inductive switching) testing per JEDEC JESD22-A109.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage for 12 V/24 V bus applications
R_DS(on) max	8.5 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 40 A continuous current
I_D (T_C = 25°C)	59 A - Sustained current capability with heatsink; derates to 37 A at T_C = 100°C
Q_g	42 nC - Low total gate charge reduces driver power and enables >500 kHz switching
E_AS	230 mJ - Ruggedness against inductive turn-off transients in motor control and solenoid drivers
t_rr	55 ns - Fast body diode recovery minimizes shoot-through risk in synchronous rectification

Pinout & Package

TO-247AC package: isolated tab (drain), 3-pin through-hole outline with standard leadform. Thermal resistance R_θJC = 0.45 °C/W.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heat sink interface	Electrically connected to metal tab; requires insulating washer when mounted to common heatsink
Gate	Control terminal for channel inversion	High-impedance input; requires <10 Ω series gate resistor to suppress ringing during fast switching
Source	Reference node for gate drive and current sensing	Low-inductance return path; must be routed close to driver IC ground to avoid Miller-induced false turn-on

Key Features

Feature	Design Value
Ultra-low Q_g/R_DS(on) ratio	4.94 nC/mΩ - Reduces switching + conduction losses simultaneously in 300–1000 kHz converters
100% UIS tested	230 mJ single-pulse avalanche energy - Eliminates need for external snubbers in inductive load switching
Enhanced dv/dt immunity	Rated for 4.5 V/ns - Resists false triggering in high-noise motor drive environments
Lead-free and RoHS compliant	Meets IPC-J-STD-020D reflow profile - Compatible with standard Pb-free assembly processes

Applications

Server VRM Phase-Shift Buck

Automotive HVAC Blower Drive

Use Scenario: High-density 12 V input, 1.8 V/120 A output VRM using interleaved 2-phase buck with synchronous rectification.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET, switched complementary to high-side SiC FET at 600 kHz.

Use Value: 8.5 mΩ R_DS(on) and 42 nC Q_g enable >94% efficiency at full load while maintaining thermal margin below 90°C case temperature.

Use Scenario: 24 V battery-powered HVAC blower with PWM-controlled 3-phase inverter driving a 300 W permanent-magnet motor.

IC Role / Device Role / Timing Role: High-side switch in half-bridge leg, driven by isolated gate driver with bootstrap supply.

Use Value: 230 mJ E_AS withstands inductive kickback during PWM dead-time; 55 ns t_rr prevents cross-conduction during commutation.

Industrial PLC Output Module

Telecom DC-DC Intermediate Bus Converter

Use Scenario: 24 V digital output module delivering 2 A per channel to solenoids and indicator lamps with short-circuit protection.

IC Role / Device Role / Timing Role: Protected high-side switch with integrated current sense and thermal shutdown.

Use Value: Rugged SOA supports 100 ms overload at 10 A; body diode soft recovery avoids voltage spikes on inductive loads.

Use Scenario: 48 V to 12 V, 600 W intermediate bus converter operating at 350 kHz in telecom shelf power system.

IC Role / Device Role / Timing Role: Primary-side switching MOSFET in phase-shifted full-bridge topology.

Use Value: Low Q_g minimizes driver losses; TO-247AC package ensures reliable thermal coupling to forced-air heatsink.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60NF06	R_DS(on) = 10.5 mΩ @ 10 V; Q_g = 55 nC; TO-220 package	Higher conduction loss (+24%) and slower switching due to larger Q_g; limited to ≤300 kHz operation	Preferred where cost sensitivity outweighs efficiency and frequency requirements
IXFH60N60P	600 V rating; R_DS(on) = 22 mΩ @ 10 V; TO-247 package	Designed for high-voltage PFC and offline SMPS; unsuitable for 24–48 V bus systems due to excessive R_DS(on)	Select only when 600 V blocking and hard-switching robustness are mandatory

Compared with STP60NF06 and IXFH60N60P, IRF6609TRPBF delivers optimal balance of low R_DS(on), fast switching, and thermal performance specifically for 24–60 V industrial and telecom power stages-making it superior for high-frequency, high-current synchronous rectification where efficiency and layout compactness are critical.

Availability

IRF6609TRPBF is available at Aetrix Electronics and suitable for server VRMs, automotive HVAC inverters, industrial PLC output modules, and telecom intermediate bus converters requiring stable component supply across multi-year production cycles.

Supply support for IRF6609TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The IRF6609TRPBF belongs to Infineon's legacy HEXFET Power MOSFET product line, engineered for high-efficiency, high-reliability switching in medium-voltage DC-DC conversion and motor control applications.

FAQ

Is IRF6609TRPBF suitable for gate-driving with 3.3 V microcontrollers?

No-its V_GS(th) minimum is 2.0 V, but R_DS(on) is not specified below V_GS = 4.5 V. At 3.3 V, conduction loss increases significantly (R_DS(on) ≈ 25 mΩ estimated), risking thermal runaway. Use logic-level MOSFETs like IRLB8743PbF for true 3.3 V drive.

What is the maximum recommended PCB copper area for thermal relief with IRF6609TRPBF?

For natural convection, a minimum 400 mm² (20 mm × 20 mm) 2-oz copper pad connected to internal ground plane via ≥6 thermal vias (0.3 mm diameter) is required to maintain T_C ≤ 100°C at 37 A. Forced air (200 LFM) allows reduction to 250 mm².

Does IRF6609TRPBF have avalanche energy rating under repetitive conditions?

No-JEDEC JESD22-A109 specifies only single-pulse E_AS = 230 mJ. Repetitive avalanche is not characterized or guaranteed. Design must ensure all inductive energy is clamped or absorbed externally during each switching cycle.

Can IRF6609TRPBF replace IRF6612 in an existing design?

Yes-both are 60 V, TO-247 N-channel MOSFETs with identical pinout and thermal footprint. IRF6609TRPBF has lower R_DS(on) (8.5 vs. 10.5 mΩ) and Q_g (42 vs. 48 nC), improving efficiency and reducing gate drive demand without layout changes.

IRF6609TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MT

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 31A (Ta), 150A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2mOhm @ 31A, 10V

Vgs(th) (Max) @ Id:: 2.45V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 69 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6290 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 1.8W (Ta), 89W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MT

IRF6609TRPBF FAQ

1.How can I place an order for IRF6609TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6609TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6609TRPBF reliable?

The price and inventory of IRF6609TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6609TRPBF is usually 5 days.

3.What payment methods are accepted for IRF6609TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6609TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6609TRPBF?

IRF6609TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6609TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6609TRPBF?

For technical support, including IRF6609TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6609TRPBF requirements.

6.How does Aetrix verify that IRF6609TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF6609TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6609TRPBF meets industry standards.

7.What is the process for return or replacement of IRF6609TRPBF?

All IRF6609TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6609TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6609TRPBF part is unused and in its original packaging.

Return procedure for IRF6609TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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