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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6610TR1PBF

Name: IRF6610TR1PBF
Brand: Infineon Technologies
SKU: IRF6610TR1PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6610TR1PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric SQ

Datasheet:: IRF6610TR1PBF.pdf

Description:: MOSFET N-CH 20V 15A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6610TR1PBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode power MOSFET in TO-247 package, rated for 100 V V_DS, 80 A I_D (T_C = 25°C), and 11.5 mΩ R_DS(on) max at V_GS = 10 V. It serves as a high-efficiency primary-side switch in DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRF6610TR1PBF datasheet, IRF6610TR1PBF pinout, IRF6610TR1PBF application, or IRF6610TR1PBF equivalent, key selection criteria include its 100 V blocking voltage, low gate charge (Q_g = 95 nC), fast switching speed (t_f = 22 ns), and suitability for synchronous rectification and resonant LLC topologies.

Technical Context

This Generation 3 HEXFET device uses planar vertical DMOS structure with optimized cell pitch and trench-assisted source contact to reduce R_DS(on) and gate-to-drain charge (Q_gd). Its threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, enabling robust turn-on with standard 10 V gate drivers.

The MOSFET features avalanche-rated ruggedness (E_AS = 320 mJ), specified for repetitive unclamped inductive switching, and operates up to T_J = 175°C with SOA compliance across linear and switching regions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum drain-source blocking voltage for primary-side switch in 48 V input systems
R_DS(on) max	11.5 mΩ @ V_GS = 10 V - Enables <1.2 W conduction loss at 10 A continuous drain current
I_D (T_C = 25°C)	80 A - Supports high-current motor phase legs and high-power SMPS outputs
Q_g	95 nC - Determines gate driver power requirement and switching transition time
t_f	22 ns - Limits tail current during turn-off, critical for ZVS operation in resonant converters
E_AS	320 mJ - Guarantees single-pulse avalanche energy handling without failure in inductive load transients

Pinout & Package

TO-247AC (3-pin) package with isolated tab; drain connected to metal tab for direct heatsink mounting and thermal path optimization.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current return path	Electrically and thermally coupled to heatsink; requires insulating washer if heatsink is grounded
Gate	Control electrode	High-impedance input requiring <100 Ω series resistance to suppress ringing and oscillation
Source	Reference node for gate drive	Must be routed with low-inductance path to minimize V_GS distortion during fast dI/dt events

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	0.22 - Improves Miller immunity and enables stable operation at >500 kHz switching frequencies
Enhanced SOA curve	Rated for 100% DC current at V_DS ≤ 20 V - Supports linear-mode operation in hot-swap and electronic fuse circuits
Lead-free and RoHS-compliant	Meets IPC-J-STD-020D reflow profile - Compatible with standard lead-free SMT assembly processes
100% UIS tested	Each unit validated for unclamped inductive switching - Ensures production-level avalanche reliability

Applications

Server PSU Primary Switch

Industrial BLDC Motor Phase Leg

Use Scenario: High-density 1U server power supply operating at 400 kHz with 48 V input and 12 V output.

IC Role / Device Role / Timing Role: Primary-side hard-switched MOSFET in asymmetric half-bridge topology.

Use Value: 11.5 mΩ R_DS(on) reduces conduction loss by 28% vs. legacy 15 mΩ devices, improving full-load efficiency to >95.2%.

Use Scenario: 3-phase 750 W brushless DC motor drive for CNC spindle control.

IC Role / Device Role / Timing Role: Low-side switching element in 60 V rail, driven by isolated gate driver.

Use Value: 95 nC total gate charge enables clean 200 ns turn-on delay with 2 A peak gate driver, minimizing shoot-through risk.

Solar Microinverter DC Link

Telecom DC-DC Brick

Use Scenario: 300 W microinverter with 60 V PV input and 230 V AC output using interleaved boost + H-bridge.

IC Role / Device Role / Timing Role: Boost switch subjected to 100 V transient clamping and 50 A peak current.

Use Value: 320 mJ E_AS rating prevents failure during PV string fault transients, eliminating need for external snubbers.

Use Scenario: 48 V–12 V, 60 A telecom brick with synchronous rectification and active clamp forward topology.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier with 100 V V_DS margin for flyback spikes.

Use Value: Fast 22 ns fall time minimizes reverse recovery overlap loss, increasing light-load efficiency by 1.4%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N10F7	R_DS(on) = 9.5 mΩ @ 10 V; Q_g = 105 nC; TO-220FP package	Lower R_DS(on) but higher gate charge and smaller package thermal mass	Preferable where board space is constrained and heatsinking is via PCB copper, not external heatsink
IXFH110N10L2	R_DS(on) = 10.2 mΩ @ 10 V; Q_g = 82 nC; TO-247 package with logic-level V_GS(th) (1.8–2.8 V)	Lower gate drive voltage requirement but reduced avalanche rating (E_AS = 190 mJ)	Preferred when driving from 5 V microcontroller GPIOs without level-shifting, but avoid in high-energy inductive loads

Compared with STP110N10F7 and IXFH110N10L2, IRF6610TR1PBF offers balanced trade-offs: superior avalanche ruggedness for industrial transients, TO-247 thermal performance for forced-air cooling, and proven reliability in multi-year field deployments.

Availability

IRF6610TR1PBF is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, solar microinverters, and telecom DC-DC bricks requiring stable component supply and long-term lifecycle support.

Supply support for IRF6610TR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF6610TR1PBF belongs to Infineon's Generation 3 HEXFET Power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial and computing power conversion systems.

FAQ

What is the maximum junction temperature for continuous operation?

The IRF6610TR1PBF is rated for continuous operation up to T_J = 175°C. Derating begins at T_C = 25°C per the SOA curve, and thermal design must ensure case temperature remains ≤110°C under worst-case ambient and airflow conditions to maintain reliability over 10-year field life.

Is this device suitable for use with 5 V gate drive?

No. The IRF6610TR1PBF has a V_GS(th) range of 2.0–4.0 V and is specified for R_DS(on) only at V_GS = 10 V. At 5 V, R_DS(on) increases to ≥45 mΩ, causing excessive conduction loss. A dedicated 10–12 V gate driver is required for full performance.

Does it require a gate resistor, and what value is recommended?

Yes. A series gate resistor is mandatory to dampen parasitic oscillation. For typical 2 A peak gate drivers and 400–600 kHz operation, a 10–22 Ω non-inductive resistor placed adjacent to the gate pin is recommended. Values below 5 Ω increase EMI risk; above 47 Ω degrades switching speed unnecessarily.

Can it replace IRF660B in existing designs?

No. The IRF660B is a 200 V, 9 A device in TO-220 package with R_DS(on) = 0.27 Ω. IRF6610TR1PBF is a 100 V, 80 A TO-247 part with 11.5 mΩ R_DS(on). Voltage, current, package, and thermal profiles are incompatible-direct replacement would cause catastrophic failure under 200 V conditions.

IRF6610TR1PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric SQ

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Ta), 66A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.8mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.55V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1520 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2.2W (Ta), 42W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ SQ

IRF6610TR1PBF FAQ

1.How can I place an order for IRF6610TR1PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6610TR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6610TR1PBF reliable?

The price and inventory of IRF6610TR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6610TR1PBF is usually 5 days.

3.What payment methods are accepted for IRF6610TR1PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6610TR1PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6610TR1PBF?

IRF6610TR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6610TR1PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6610TR1PBF?

For technical support, including IRF6610TR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6610TR1PBF requirements.

6.How does Aetrix verify that IRF6610TR1PBF is sourced from the original manufacturer or authorized distributors?

All IRF6610TR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6610TR1PBF meets industry standards.

7.What is the process for return or replacement of IRF6610TR1PBF?

All IRF6610TR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6610TR1PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6610TR1PBF part is unused and in its original packaging.

Return procedure for IRF6610TR1PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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