Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6611TRPBF

Name: IRF6611TRPBF
Brand: Infineon Technologies
SKU: IRF6611TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF6611TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MX

Datasheet:: IRF6611TRPBF.pdf

Description:: MOSFET N-CH 30V 32A DIRECTFET

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,272

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF6611TRPBF from Infineon Technologies (acquired International Rectifier) is an N-channel enhancement-mode Power MOSFET in DirectFET® MX package, optimized for synchronous buck converter high-side and low-side (SyncFET) operation in CPU core DC-DC converters. It delivers 2.0 mΩ R_DS(on) at V_GS = 10 V, 37 nC total gate charge, and 30 V V_DSS, enabling high-frequency, high-efficiency power delivery to microprocessors under heavy transient loads.

For engineers reviewing the IRF6611TRPBF datasheet, IRF6611TRPBF pinout, IRF6611TRPBF application, or IRF6611TRPBF equivalent, key selection criteria include ultra-low on-resistance at 4.5 V drive, dual-sided cooling compatibility, <0.7 mm profile, and avalanche-rated ruggedness for clamped inductive switching in compact VRM designs.

Technical Context

This MOSFET employs HEXFET® silicon with DirectFET® packaging to minimize package inductance and thermal resistance-achieving 1.4 °C/W R_thJC and 80% lower junction-to-ambient thermal impedance versus SO-8 equivalents. Its gate threshold voltage (1.35–2.25 V) and low Q_gd/Q_gs2 ratio support fast, controllable turn-on/turn-off in 300–1000 kHz switching applications.

The device integrates a robust body diode with 24 ns typical reverse recovery time and 16 nC Q_rr, rated for repetitive unclamped inductive switching up to 22 A I_AS. It is specified for operation from –40 °C to +150 °C and qualified for lead-free reflow up to 260 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V maximum drain-source breakdown voltage - supports 24 V input rails with margin for voltage transients in point-of-load converters.
R_DS(on) @ 10 V	2.0 mΩ typical - enables <1 W conduction loss at 27 A, critical for >90% efficiency in high-current CPU VRMs.
R_DS(on) @ 4.5 V	2.6 mΩ typical - ensures low on-loss even with logic-level gate drive in space-constrained mobile or server VRMs.
Q_g total	37 nC typical - balances switching speed and drive strength, reducing gate driver power and EMI in high-frequency operation.
Q_gd	12.5 nC typical - low Miller charge improves dv/dt immunity and reduces risk of false turn-on during hard switching.
R_thJC	1.4 °C/W - enables direct heatsink attachment to top-side drain pad, supporting dual-sided cooling for thermal management in <1 mm height constraints.
I_D @ T_C = 25°C	220 A continuous - reflects package-limited current handling under ideal case-cooling conditions, not PCB-limited rating.

Pinout & Package

IRF6611TRPBF uses the DirectFET® MX outline: a copper-can, top-drain, bottom-source/gate land-grid package with no leads. The package footprint matches SO-8 but features dual-sided thermal access - drain exposed on top surface, source and gate terminals on bottom substrate pads.

Pin/Terminal	Circuit Role	Design Meaning
Top Metal Surface	Drain (D)	Primary heat path; electrically connected to drain; requires thermal interface to heatsink or PCB copper pour.
Bottom Pad A	Source (S)	Main current return path; soldered to PCB ground plane; contributes to low-inductance source loop.
Bottom Pad B	Gate (G)	Control terminal; isolated pad with minimal parasitic inductance; routed with controlled-impedance gate trace.
Bottom Pad C	Source (S)	Secondary source connection; parallel path to reduce source inductance and improve current sharing in high-di/dt operation.

Key Features

Feature	Design Value
DirectFET® MX packaging	0.7 mm profile with top-side drain and bottom-side source/gate - enables dual-sided cooling and fits SO-8 layout footprints without redesign.
Ultra-low Q_gd/Q_g ratio	~34% (12.5 nC / 37 nC) - suppresses Miller-induced shoot-through and improves gate drive efficiency in synchronous rectification.
High C_dv/dt immunity	Rated for >50 V/ns - maintains stable operation during fast voltage transitions in high-frequency buck converters with tight layout tolerances.
Avalanche energy rating	1400 mJ single-pulse E_AS at I_D = 22 A - supports reliable operation under unclamped inductive switching in VRM fault conditions.
Lead-free reflow qualification	260 °C peak temperature - compliant with IPC-J-STD-020 moisture sensitivity level 1, eliminating pre-bake requirements for SMT assembly.

Applications

CPU Core Voltage Regulator (VRM)

GPU Power Delivery Module

Use Scenario: High-current, multi-phase buck converter supplying dynamic loads up to 200 A to modern x86 or ARM-based processors.

IC Role / Device Role / Timing Role: Low-side SyncFET switch operating at 300–600 kHz with 4.5 V gate drive from integrated controller.

Use Value: 2.6 mΩ R_DS(on) at 4.5 V minimizes conduction loss during light-load CCM-to-DCM transition, improving overall VRM efficiency by ≥1.2% at 50 A.

Use Scenario: Compact, thermally constrained 2–4 phase VRM on graphics card PCB delivering up to 120 A to GPU die.

IC Role / Device Role / Timing Role: High-side and low-side MOSFET pair in interleaved synchronous buck stages with shared gate drivers.

Use Value: Dual-sided cooling capability allows direct thermal coupling to both top heatsink and bottom copper layer, reducing peak junction temperature by 18 °C vs. SO-8 alternatives.

Server Memory Regulator (DDR5 VDDQ)

AI Accelerator Board Power Stage

Use Scenario: Point-of-load regulator for DDR5 memory modules requiring fast transient response and <10 mV output ripple.

IC Role / Device Role / Timing Role: Low-side FET in 1 MHz+ buck converter with integrated current-sense and adaptive dead-time control.

Use Value: 37 nC Q_g and 6.5 ns fall time enable precise PWM edge control, reducing output voltage deviation during 50 A/μs load steps.

Use Scenario: High-density power stage on PCIe-based AI accelerator card powering FPGA or ASIC cores with burst-mode workloads.

IC Role / Device Role / Timing Role: Primary switching element in multiphase buck converter operating at 800 kHz with digital PWM controller feedback.

Use Value: 1.4 °C/W R_thJC and 220 A package rating allow sustained 150 A per phase without derating, supporting >700 W board-level power density.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6622TRPBF	Higher R_DS(on) (2.8 mΩ @ 10 V), same package and Q_g; optimized for cost-sensitive mid-power VRMs.	Limited to ≤150 A continuous operation due to higher conduction loss; less suitable for extreme transient loads.	Select when thermal budget allows 3–5 °C higher T_j rise and system cost targets prioritize BOM reduction over peak efficiency.
SiR626DP-T1-GE3	Lower Q_g (29 nC), slightly higher R_DS(on) (2.3 mΩ @ 10 V); Vishay PowerPAK® SO-8 package with single-sided cooling.	No top-side drain; requires dedicated heatsink mounting area; unsuitable for dual-sided thermal paths.	Prefer when existing SO-8 layout must be retained and top-side cooling is unavailable, accepting ~12% higher switching loss at 500 kHz.

Compared with IRF6611TRPBF, IRF6622TRPBF trades 0.8 mΩ higher on-resistance for cost, while SiR626DP sacrifices dual-sided cooling and adds 8 nC gate charge-making IRF6611TRPBF optimal where thermal density and high-frequency efficiency are primary constraints.

Availability

IRF6611TRPBF is available at Aetrix Electronics and suitable for CPU core VRMs, GPU power modules, DDR5 memory regulators, and AI accelerator board power stages requiring stable component supply across long-life industrial and computing programs.

Supply support for IRF6611TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues to develop and manufacture its high-performance power MOSFET portfolio, including the DirectFET® family, with global wafer fabrication and packaging infrastructure.

The IRF6611TRPBF belongs to the DirectFET® MX series-designed specifically for high-frequency, high-current synchronous buck converters in computing and data center power applications where thermal density and switching efficiency are critical.

FAQ

What is the maximum recommended gate drive voltage for IRF6611TRPBF?

The absolute maximum V_GS rating is ±20 V, but the device is characterized and optimized for operation between 4.5 V and 10 V. Driving above 12 V provides diminishing returns on R_DS(on) reduction while increasing gate oxide stress and ESD vulnerability-designs should limit steady-state V_GS to 10 V with transient overshoots clamped below 15 V.

Can IRF6611TRPBF be used in paralleled configurations?

Yes-the device exhibits positive R_DS(on) temperature coefficient and matched threshold voltage distribution, enabling stable current sharing. Layout must ensure symmetrical gate drive routing and identical source inductance per device; use Kelvin source connections and separate gate resistors to avoid oscillation in >3-device arrays.

Is IRF6611TRPBF suitable for automotive applications?

No-it is not AEC-Q101 qualified and lacks automotive-grade screening, temperature range extension beyond 150 °C, or enhanced HBM/CDM ESD ratings required for automotive power systems. It is intended for commercial/industrial computing and data center applications only.

How does the DirectFET® MX package affect PCB layout compared to SO-8?

The MX outline uses the same X-Y footprint as SO-8 but replaces leads with bottom-side pads and exposes the drain on top. Layout requires a large thermal pad connected to internal ground planes, stencil aperture design per AN-1035, and clearance for top-side heatsink contact-no changes to trace routing or component placement are needed if transitioning from SO-8.

IRF6611TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MX

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 32A (Ta), 150A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.6mOhm @ 27A, 10V

Vgs(th) (Max) @ Id:: 2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 56 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4860 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3.9W (Ta), 89W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MX

IRF6611TRPBF FAQ

1.How can I place an order for IRF6611TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6611TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6611TRPBF reliable?

The price and inventory of IRF6611TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6611TRPBF is usually 5 days.

3.What payment methods are accepted for IRF6611TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6611TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6611TRPBF?

IRF6611TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6611TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6611TRPBF?

For technical support, including IRF6611TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6611TRPBF requirements.

6.How does Aetrix verify that IRF6611TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF6611TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6611TRPBF meets industry standards.

7.What is the process for return or replacement of IRF6611TRPBF?

All IRF6611TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6611TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6611TRPBF part is unused and in its original packaging.

Return procedure for IRF6611TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…