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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6612TR1

Name: IRF6612TR1
Brand: Infineon Technologies
SKU: IRF6612TR1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6612TR1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MX

Datasheet:: IRF6612TR1.pdf

Description:: MOSFET N-CH 30V 24A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6612TR1 from Infineon Technologies is a 30 V, 40 A, N-channel TrenchMOS™ power MOSFET in a DirectFET™ MX package, optimized for high-frequency synchronous buck converters with low gate charge (Q_g = 19 nC) and ultra-low R_DS(on) (2.1 mΩ @ V_GS = 10 V). It serves as the high-side or low-side switch in server VRMs and POL DC-DC modules.

For engineers reviewing the IRF6612TR1 datasheet, IRF6612TR1 pinout, IRF6612TR1 application, or IRF6612TR1 equivalent, key selection criteria include its 2.1 mΩ on-resistance at 10 V gate drive, 19 nC total gate charge, 30 V V_DS rating, DirectFET™ MX thermal performance, and suitability for 5–20 A load current phases in multiphase CPU/GPU power delivery.

Technical Context

This MOSFET employs Infineon's TrenchMOS™ process with copper-clip DirectFET™ MX packaging to minimize parasitic inductance and enhance thermal conduction from die to PCB. Its gate threshold voltage (V_GS(th)) is 1.8 V (min) to 2.6 V (max), enabling robust 3.3 V and 5 V gate driver compatibility.

The device features an integrated body diode with reverse recovery time (t_rr) of 32 ns and Q_rr of 27 nC under I_F = 20 A, V_DD = 15 V conditions - critical for minimizing shoot-through loss and EMI in hard-switched synchronous rectification.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - supports input rails up to 24 V nominal with 20 % margin for transient spikes in server/telecom POLs
R_DS(on) @ V_GS = 10 V	2.1 mΩ - enables <1.5 W conduction loss at 20 A, reducing heatsink requirements in compact VRMs
Q_g	19 nC - allows efficient switching at 1 MHz with standard gate drivers (e.g., ISL6612A)
I_D (continuous)	40 A @ T_C = 100 °C - sustains full load in dual-phase configurations without derating
Package	DirectFET™ MX - exposes source and drain directly to PCB copper for <0.5 °C/W junction-to-board thermal resistance
V_GS(th)	1.8–2.6 V - ensures reliable turn-on with 3.3 V logic-level drivers while avoiding false triggering

Pinout & Package

IRF6612TR1 uses the DirectFET™ MX surface-mount package (7.0 × 4.8 × 0.7 mm), with top-side drain (D), bottom-side source (S), and side-terminal gate (G). The package eliminates bond wires and provides double-sided cooling via exposed metal pads.

Pin/Terminal	Circuit Role	Design Meaning
Drain (top metal pad)	High-current output node	Connected directly to input rail or inductor node; handles full phase current with minimal inductance
Source (bottom metal pad)	Power return path	Soldered to large PCB ground/power plane; serves as primary thermal and electrical return
Gate (side terminal)	Control input	Low-inductance connection point for gate driver IC; isolated from high-dv/dt drain node

Key Features

Feature	Design Value
TrenchMOS™ cell architecture	Enables 2.1 mΩ R_DS(on) in 30 V class while maintaining >1000 V_DS avalanche ruggedness
DirectFET™ MX copper-clip construction	Reduces package inductance to <0.5 nH and thermal resistance to 0.45 °C/W (junction-to-board)
Optimized gate charge profile	Q_gd/Q_g ratio of 0.21 minimizes Miller plateau duration, improving hard-switching efficiency
Enhanced body diode softness	t_rr = 32 ns with low peak I_RRM, reducing voltage overshoot and EMI during synchronous rectification

Applications

Server VRM Phase Block

GPU Power Delivery Module

Use Scenario: Dual-phase 12 V input → 0.8–1.2 V output VRM supplying Intel Xeon or AMD EPYC CPUs.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 500 kHz–1 MHz with 3.3 V gate drive.

Use Value: 2.1 mΩ R_DS(on) reduces conduction loss by 35 % vs. legacy SO-8 MOSFETs, enabling higher power density without forced air cooling.

Use Scenario: 3-phase 48 V–12 V intermediate bus converter feeding NVIDIA A100 GPU memory subsystem.

IC Role / Device Role / Timing Role: High-side main switch in interleaved buck stage, driven by ISL68224 controller.

Use Value: 19 nC Q_g allows clean 1 MHz switching with <10 ns rise/fall times, minimizing dead-time losses and improving transient response.

Telecom Rectifier Module

Industrial PLC Power Stage

Use Scenario: 48 V input, 3.3 V/20 A output DC-DC module for base station control boards.

IC Role / Device Role / Timing Role: Low-side switch in synchronous buck with 5 V gate drive and 200 kHz switching frequency.

Use Value: V_GS(th) range (1.8–2.6 V) prevents accidental turn-on during brown-out conditions, improving system reliability.

Use Scenario: 24 V input, 5 V/10 A isolated auxiliary supply in programmable logic controller backplane.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in active-clamp forward topology.

Use Value: Body diode t_rr = 32 ns limits reverse recovery spike to <15 V, eliminating need for external snubbers and reducing BOM count.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6616TR1PBF	R_DS(on) = 1.7 mΩ @ 10 V; Q_g = 22 nC; same DirectFET™ MX package	Lower on-resistance but higher gate charge increases switching loss above 750 kHz	Select when conduction loss dominates (e.g., <500 kHz, >30 A continuous) and thermal headroom is constrained
SiR626DP-T1-GE3	R_DS(on) = 2.3 mΩ @ 10 V; Q_g = 17 nC; PowerPAK® SO-8 package	Higher package inductance (1.2 nH) and thermal resistance (1.2 °C/W) limit high-frequency/high-current use	Select when board space permits SO-8 footprint and cost sensitivity outweighs thermal performance needs

Compared with IRF6612TR1, IRF6616TR1PBF trades 16 % lower R_DS(on) for 16 % higher Q_g, favoring low-frequency, high-current designs; SiR626DP-T1-GE3 offers lower gate charge but sacrifices thermal and inductive performance due to conventional leadframe packaging.

Availability

IRF6612TR1 is available at Aetrix Electronics and suitable for server VRMs, GPU power modules, telecom rectifiers, and industrial PLC power stages requiring stable component supply across multi-year production cycles.

Supply support for IRF6612TR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and industrial sensors, with over 30 years of MOSFET innovation and ISO/TS 16949-certified manufacturing.

The DirectFET™ product line targets high-efficiency, high-frequency DC-DC conversion in datacenter, telecom, and industrial power systems - prioritizing low R_DS(on), low Q_g, and superior thermal performance in compact packages.

FAQ

What is the maximum safe operating temperature for IRF6612TR1?

The IRF6612TR1 has a maximum junction temperature (T_J) of 175 °C. For reliable long-term operation, keep T_J ≤ 150 °C under worst-case ambient and power dissipation conditions. Thermal design must account for its DirectFET™ MX package's 0.45 °C/W junction-to-board resistance and PCB copper area.

Can IRF6612TR1 be used with 3.3 V gate drivers?

Yes - its V_GS(th) range (1.8–2.6 V) ensures turn-on with 3.3 V logic-level drivers. However, R_DS(on) rises to 3.8 mΩ at V_GS = 4.5 V, so conduction loss increases ~80 % versus 10 V drive. Use only in applications where switching loss dominates or gate drive voltage is fixed.

Does IRF6612TR1 require a gate resistor for stability?

A small gate resistor (2–10 Ω) is recommended to dampen ringing caused by PCB trace inductance interacting with Q_gd. Without it, fast dv/dt (>5 V/ns) at the drain can induce false turn-on via Miller coupling. The resistor value should balance switching speed and EMI suppression per layout measurements.

Is IRF6612TR1 suitable for avalanche operation?

Yes - it is rated for repetitive avalanche energy (E_AS) of 110 mJ at T_J = 25 °C. This supports limited unclamped inductive switching, such as during startup or fault events. However, sustained avalanche operation degrades reliability; proper clamp circuits or snubbers are advised for repeated stress.

IRF6612TR1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MX

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Ta), 136A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.3mOhm @ 24A, 10V

Vgs(th) (Max) @ Id:: 2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3970 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 89W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MX

IRF6612TR1 FAQ

1.How can I place an order for IRF6612TR1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6612TR1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6612TR1 reliable?

The price and inventory of IRF6612TR1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6612TR1 is usually 5 days.

3.What payment methods are accepted for IRF6612TR1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6612TR1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6612TR1?

IRF6612TR1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6612TR1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6612TR1?

For technical support, including IRF6612TR1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6612TR1 requirements.

6.How does Aetrix verify that IRF6612TR1 is sourced from the original manufacturer or authorized distributors?

All IRF6612TR1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6612TR1 meets industry standards.

7.What is the process for return or replacement of IRF6612TR1?

All IRF6612TR1 units undergo pre-shipment inspection (PSI). If there is an issue with IRF6612TR1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6612TR1 part is unused and in its original packaging.

Return procedure for IRF6612TR1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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