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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6612TR1PBF

Name: IRF6612TR1PBF
Brand: Infineon Technologies
SKU: IRF6612TR1PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6612TR1PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MX

Datasheet:: IRF6612TR1PBF.pdf

Description:: MOSFET N-CH 30V 24A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6612TR1PBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode Power MOSFET in TO-247 package, rated for 100 V V_DS, 58 A I_D (T_C = 25°C), and 12.5 mΩ R_DS(on) max at V_GS = 10 V. It serves as a high-efficiency primary-side switching device in DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRF6612TR1PBF datasheet, IRF6612TR1PBF pinout, IRF6612TR1PBF application, or IRF6612TR1PBF equivalent, key selection criteria include its low gate charge (Q_g = 49 nC), fast turn-on/turn-off times (t_on = 25 ns, t_off = 45 ns), and rugged avalanche rating (E_AS = 220 mJ).

Technical Context

This Generation 3 HEXFET device uses planar vertical DMOS structure with optimized cell pitch and trench-assisted source contact to reduce R_DS(on) × Q_g figure-of-merit. Its threshold voltage (V_GS(th)) ranges 2.0–4.0 V, enabling direct drive from 5 V logic without gate driver buffering in medium-power applications.

The MOSFET features fully characterized SOA curves up to 100 µs pulse width, integrated body diode with reverse recovery time (t_rr) = 65 ns and Q_rr = 42 nC, and specified dV/dt immunity of 4.5 V/ns minimum - critical for hard-switched SMPS topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum drain-source blocking voltage under continuous DC operation
R_DS(on) max	12.5 mΩ @ V_GS = 10 V - Enables ≤1.2 W conduction loss at 10 A DC current
I_D (T_C = 25°C)	58 A - Continuous drain current rating with heatsink at case temperature 25°C
Q_g	49 nC - Total gate charge determining required driver peak current for 100 kHz switching
t_on/t_off	25 ns / 45 ns - Defines minimum practical dead-time in synchronous buck or half-bridge circuits
E_AS	220 mJ - Single-pulse avalanche energy capability supporting unclamped inductive switching stress

Pinout & Package

TO-247AC (3-pin, straight lead) package with isolated tab (drain-connected). Standard mounting requires electrically insulating thermal interface and mechanical torque control (0.5–0.8 N·m) on M3 screw.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main power output terminal	Electrically connected to metal tab; must be isolated from heatsink unless system ground reference permits
Source	Power return and gate reference node	Serves as common reference for gate drive and current sensing; low-inductance layout essential
Gate	Control input	High-impedance MOS gate requiring <100 Ω series resistance to suppress ringing during fast edge transitions

Key Features

Feature	Design Value
Low R_DS(on) × Q_g	612.5 mΩ·nC - Reduces combined conduction + switching losses in 100–500 kHz DC-DC stages
Fast body diode	t_rr = 65 ns, Q_rr = 42 nC - Minimizes reverse recovery loss and EMI in synchronous rectification
Rugged avalanche rating	E_AS = 220 mJ - Eliminates need for external snubbers in flyback or LLC resonant converter primary switches
Enhanced dV/dt immunity	4.5 V/ns - Prevents false turn-on during high-slew-rate voltage transients across drain-source

Applications

Server VRM

Industrial Motor Drive

Use Scenario: 12 V input, 1.8 V/120 A output multiphase buck converter for CPU core power delivery.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 500 kHz with 30 ns dead-time.

Use Value: 12.5 mΩ R_DS(on) limits conduction loss to 1.8 W per phase at full load; 49 nC Q_g enables efficient gate drive with 1 A peak driver.

Use Scenario: 48 V DC bus driving 3-phase BLDC motor in automated guided vehicle (AGV) traction inverter.

IC Role / Device Role / Timing Role: Low-side switch in 60 kHz PWM-driven half-bridge leg with regenerative braking current path.

Use Value: Fast 65 ns body diode recovery supports zero-voltage switching during commutation; 220 mJ E_AS withstands inductive kick during emergency stop.

Telecom PSU

EV Onboard Charger

Use Scenario: Primary-side switch in 3.3 kW LLC resonant converter for 48 V telecom rectifier.

IC Role / Device Role / Timing Role: Hard-switched main switch handling 100 V DC link with 150 kHz fundamental frequency.

Use Value: 4.5 V/ns dV/dt immunity prevents spurious turn-on during resonant voltage reversal; SOA validated to 100 µs pulses.

Use Scenario: Secondary-side synchronous rectifier in 6.6 kW AC/DC stage of bidirectional OBC.

IC Role / Device Role / Timing Role: 100 V-rated rectifier replacing Schottky diode in phase-shifted full-bridge topology.

Use Value: 12.5 mΩ R_DS(on) cuts conduction loss by 65% vs. 45 V Schottky; Q_rr = 42 nC avoids cross-conduction during ZVS transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N10F7	R_DS(on) = 10.5 mΩ @ 10 V; Q_g = 58 nC; TO-220FP package	Lower R_DS(on) but higher Q_g; limited to 45 A T_C = 25°C	Prefer when thermal margin allows TO-220FP mounting and lower conduction loss outweighs gate drive burden
IXFH110N10L2	R_DS(on) = 11.0 mΩ @ 10 V; Q_g = 42 nC; TO-247 package	Lower Q_g and faster t_on/t_off; same footprint but different pinout (source/gate swapped)	Select when minimizing gate drive loss is critical and PCB layout can accommodate pinout revision

Compared with STP110N10F7 and IXFH110N10L2, IRF6612TR1PBF offers balanced R_DS(on)-Q_g trade-off and verified avalanche ruggedness - making it preferred for unclamped inductive loads and mixed-speed SMPS designs where reliability trumps marginal efficiency gains.

Availability

IRF6612TR1PBF is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom PSUs, and EV onboard chargers requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF6612TR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The IRF6612TR1PBF belongs to the HEXFET® Generation 3 power MOSFET product line, engineered for high-frequency, high-efficiency switching in industrial and computing power conversion systems.

FAQ

Is IRF6612TR1PBF suitable for 200 kHz hard-switched PFC circuits?

Yes - its 12.5 mΩ R_DS(on), 49 nC Q_g, and 220 mJ E_AS meet requirements for boost PFC switches up to 200 kHz. The 4.5 V/ns dV/dt rating ensures stability during high-slew-rate line voltage transitions, and SOA validation to 100 µs supports worst-case fault conditions without derating.

What is the maximum recommended gate resistor value for 500 kHz operation?

A 10 Ω gate resistor is recommended for 500 kHz operation. This value balances switching speed (t_on/t_off ≈ 25/45 ns) against gate driver stress and ringing suppression. Lower values risk excessive peak current (>2 A), while higher values increase switching losses beyond acceptable thresholds for high-frequency designs.

Does IRF6612TR1PBF have a qualified AEC-Q101 rating for automotive use?

No - IRF6612TR1PBF is not AEC-Q101 qualified. It is rated for industrial temperature range (–55°C to +175°C) and intended for computing, telecom, and industrial power applications. For automotive-grade equivalents, consider Infineon's OptiMOS™ 5 series with explicit AEC-Q101 certification and extended qualification testing.

Can IRF6612TR1PBF replace IRF6615 in existing designs?

Yes - IRF6612TR1PBF and IRF6615 share identical TO-247 package, pinout, and 100 V rating, but IRF6612TR1PBF has lower R_DS(on) (12.5 mΩ vs. 14.5 mΩ) and slightly higher Q_g (49 nC vs. 45 nC). Layout and gate drive remain compatible; thermal performance improves by ~15% at 10 A DC, with negligible impact on switching loss.

IRF6612TR1PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MX

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Ta), 136A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.3mOhm @ 24A, 10V

Vgs(th) (Max) @ Id:: 2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3970 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 89W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MX

IRF6612TR1PBF FAQ

1.How can I place an order for IRF6612TR1PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6612TR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6612TR1PBF reliable?

The price and inventory of IRF6612TR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6612TR1PBF is usually 5 days.

3.What payment methods are accepted for IRF6612TR1PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6612TR1PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6612TR1PBF?

IRF6612TR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6612TR1PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6612TR1PBF?

For technical support, including IRF6612TR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6612TR1PBF requirements.

6.How does Aetrix verify that IRF6612TR1PBF is sourced from the original manufacturer or authorized distributors?

All IRF6612TR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6612TR1PBF meets industry standards.

7.What is the process for return or replacement of IRF6612TR1PBF?

All IRF6612TR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6612TR1PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6612TR1PBF part is unused and in its original packaging.

Return procedure for IRF6612TR1PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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