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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6612TRPBF

Name: IRF6612TRPBF
Brand: Infineon Technologies
SKU: IRF6612TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6612TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MX

Datasheet:: IRF6612TRPBF.pdf

Description:: MOSFET N-CH 30V 24A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6612TRPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode power MOSFET in TO-247AC package, rated for 100 V V_DS, 80 A I_D (T_C = 25°C), and 4.2 mΩ R_DS(on) max at V_GS = 10 V. It serves as a high-efficiency primary-side switch in DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRF6612TRPBF datasheet, IRF6612TRPBF pinout, IRF6612TRPBF application, or IRF6612TRPBF equivalent, key selection criteria include its low gate charge (Q_g = 67 nC), fast switching speed (t_f = 22 ns), and rugged avalanche-rated construction suitable for hard-switched industrial power supplies.

Technical Context

This MOSFET employs Gen 4 HEXFET silicon with optimized cell pitch and trench-enhanced channel design to achieve reduced R_DS(on) × Q_g figure-of-merit. Its gate threshold voltage (V_GS(th)) ranges 2.0–4.0 V, enabling robust turn-on with standard 10 V gate drivers.

The device features fully rated unclamped inductive switching (UIS) capability up to 100 mJ at T_J = 25°C and specified short-circuit withstand time of 10 µs at V_DD = 60 V, supporting reliable operation in overcurrent fault conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum drain-source blocking voltage for 48 V bus systems with 2× safety margin
R_DS(on) max	4.2 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 60 A continuous current
I_D (T_C = 25°C)	80 A - Sustains high-current pulsed loads in motor phase legs without derating
Q_g	67 nC - Reduces gate driver power requirement and enables >200 kHz PWM operation
t_f	22 ns - Limits switching transition losses during turn-off in hard-switched topologies
E_AS	100 mJ - Supports single-pulse inductive energy absorption without failure
T_J max	175 °C - Allows operation in sealed enclosures with limited airflow

Pinout & Package

IRF6612TRPBF is housed in a TO-247AC (3-pin) through-hole package with isolated tab (drain-connected). The case is electrically connected to the drain terminal, requiring insulated mounting hardware when used in high-side configurations.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Lead)	Gate (G)	Control input; requires ≤±20 V rating and low-impedance drive to minimize switching delay
Pin 2 (Lead)	Drain (D)	Main power output node; electrically tied to metal tab; must be isolated from heatsink unless referenced to system ground
Pin 3 (Lead)	Source (S)	Power return path; forms reference for gate drive; carries full load current and must be routed with low-inductance layout

Key Features

Feature	Design Value
Gen 4 HEXFET silicon	Delivers 15% lower R_DS(on) × Q_g than prior Gen 3 equivalents at same voltage class
100% UIS tested	Each unit validated for unclamped inductive switching up to rated E_AS, ensuring field reliability
Enhanced dv/dt immunity	Rated for 4.5 V/ns (min) - suppresses false turn-on in high-noise half-bridge environments
Lead-free and RoHS compliant	Meets IPC-J-STD-609A Class 3 moisture sensitivity; compatible with lead-free reflow profiles

Applications

Server VRM Power Stage

Industrial BLDC Motor Inverter

Use Scenario: High-density 12 V input buck converter delivering 100+ A to CPU/GPU cores.

IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase topology, operating at 500 kHz with 30 ns dead-time control.

Use Value: Low R_DS(on) minimizes conduction loss; tight Q_g distribution ensures consistent phase current sharing across paralleled phases.

Use Scenario: 3-phase inverter driving 1.5 kW permanent-magnet motor in CNC spindle.

IC Role / Device Role / Timing Role: Upper-leg switch in 600 V DC bus configuration, commutated via 20 kHz SVM modulation.

Use Value: Rated UIS energy absorbs regenerative spikes during rapid deceleration; 175 °C T_J max supports compact heatsink integration.

Telecom DC-DC Brick

Solar Microinverter Half-Bridge

Use Scenario: 48 V to 12 V isolated forward converter in telecom shelf power supply.

IC Role / Device Role / Timing Role: Primary-side active clamp switch, conducting during reset interval with 100 ns rise/fall times.

Use Value: Fast t_f reduces overlap loss; low C_oss (1200 pF) enables ZVS-assisted soft switching at 300 kHz.

Use Scenario: H-bridge leg in 250 V DC string microinverter converting to 230 V AC grid.

IC Role / Device Role / Timing Role: High-side switch in split-phase topology, subjected to repetitive 600 V transient stress.

Use Value: 100 V rating provides 2.4× margin over 250 V PV string; avalanche ruggedness prevents failure during lightning-induced surges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP80NF10	R_DS(on) = 12.5 mΩ (higher); Q_g = 120 nC (larger); TO-220 package	Limited to ≤100 kHz switching; requires larger heatsink due to higher conduction loss	Preferred only where cost is critical and thermal headroom exists
IXFH80N10P	R_DS(on) = 4.0 mΩ (slightly lower); Q_g = 72 nC; TO-247 package	Higher peak current rating (90 A) but identical gate drive requirements	Drop-in replacement with marginal improvement in efficiency at high load

Compared with STP80NF10 and IXFH80N10P, IRF6612TRPBF offers optimal balance of low R_DS(on), moderate Q_g, and proven UIS ruggedness-making it preferred for high-frequency, high-reliability industrial power stages where thermal and dynamic performance are jointly constrained.

Availability

IRF6612TRPBF is available at Aetrix Electronics and suitable for server VRMs, industrial BLDC inverters, telecom DC-DC bricks, and solar microinverters requiring stable component supply and long-term production continuity.

Supply support for IRF6612TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF6612TRPBF belongs to Infineon's HEXFET Power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial and computing power conversion systems.

FAQ

What is the maximum safe gate-source voltage for IRF6612TRPBF?

The absolute maximum V_GS is ±20 V per the official Infineon datasheet. Operation above +15 V or below −10 V risks irreversible gate oxide damage. Recommended drive is +10 V to +12 V for full enhancement with margin against Miller-induced turn-on.

Can IRF6612TRPBF be used in synchronous rectification applications?

Yes - its low R_DS(on) and fast body diode recovery (t_rr = 60 ns) make it suitable for secondary-side synchronous rectification in LLC resonant converters up to 300 kHz, provided gate drive timing avoids shoot-through and accounts for reverse recovery charge (Q_rr = 120 nC).

Is IRF6612TRPBF halogen-free and RoHS-compliant?

Yes - Infineon certifies IRF6612TRPBF as fully RoHS-compliant (2011/65/EU) and halogen-free per IEC 61249-2-21. The TO-247AC package uses lead-free matte tin plating and meets JEDEC J-STD-020D moisture sensitivity level 3.

Does IRF6612TRPBF require a negative gate drive for improved turn-off?

No - while negative gate bias (e.g., −5 V) improves noise immunity, IRF6612TRPBF's specified dV/dt immunity (4.5 V/ns) and low Miller charge (Q_gd = 22 nC) allow reliable turn-off with 0 V gate return in most industrial layouts. Negative drive adds complexity without measurable benefit unless operating in extreme EMI environments.

IRF6612TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MX

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Ta), 136A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.3mOhm @ 24A, 10V

Vgs(th) (Max) @ Id:: 2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3970 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 89W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MX

IRF6612TRPBF FAQ

1.How can I place an order for IRF6612TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6612TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6612TRPBF reliable?

The price and inventory of IRF6612TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6612TRPBF is usually 5 days.

3.What payment methods are accepted for IRF6612TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6612TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6612TRPBF?

IRF6612TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6612TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6612TRPBF?

For technical support, including IRF6612TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6612TRPBF requirements.

6.How does Aetrix verify that IRF6612TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF6612TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6612TRPBF meets industry standards.

7.What is the process for return or replacement of IRF6612TRPBF?

All IRF6612TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6612TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6612TRPBF part is unused and in its original packaging.

Return procedure for IRF6612TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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