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Infineon Technologies IRF6613TR1
- Part No.:
- IRF6613TR1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- DirectFET™ Isometric MT
- Datasheet:
-
IRF6613TR1.pdf
- Description:
- MOSFET N-CH 40V 23A DIRECTFET
- Quantity:
- Payment:
- Shipping:
Inventory:2,559
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Product details
Overview
IRF6613TR1 from Infineon Technologies (formerly International Rectifier) is a 40V N-channel enhancement-mode Power MOSFET in DirectFET MT package, optimized for synchronous rectification in isolated DC-DC converters. It delivers 3.4 mΩ RDS(on) at VGS = 10 V, 42 nC total gate charge, and 1.4 °C/W junction-to-case thermal resistance - enabling high-efficiency, high-frequency power conversion in server VRMs and telecom POL modules.
For engineers reviewing the IRF6613TR1 datasheet, IRF6613TR1 pinout, IRF6613TR1 application, or IRF6613TR1 equivalent, key selection criteria include its ultra-low profile (0.7 mm), dual-sided cooling capability, Cdv/dt-induced turn-on immunity, and compatibility with standard SO-8 PCB footprints and reflow processes per AN-1035.
Technical Context
The IRF6613TR1 employs HEXFET silicon with trench-gate structure and is housed in a copper-can DirectFET MT package featuring top-side drain and bottom-side source terminals. Its low Qgd/Qgs2 ratio (12.6 nC / 3.3 nC) and 460 pF Crss suppress Miller-induced false turn-on in high-dV/dt synchronous buck environments.
Thermal design leverages direct metal-to-metal contact on both sides: top-side drain connects to heatsink or power plane, while bottom-side source bonds to PCB copper. This architecture achieves 1.0 °C/W junction-to-PCB resistance when mounted per recommended layout - an 80% improvement over prior-generation packages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40 V - Supports input rails up to 36 V nominal in 48 V intermediate bus systems. |
| RDS(on) max | 3.4 mΩ @ VGS = 10 V - Enables ≤1.5 W conduction loss at 23 A continuous drain current. |
| Qg typ. | 42 nC - Reduces gate drive power and allows use of lower-current drivers in high-frequency (>1 MHz) operation. |
| Crss | 460 pF - Limits Miller feedback, improving noise immunity during fast switching transitions. |
| RθJC | 1.4 °C/W - Enables direct thermal coupling to heatsink without thermal interface material in compact layouts. |
| ID @ TC = 25°C | 150 A - Sustains high pulsed currents in transient load steps typical in CPU/GPU VRMs. |
| VGS(th) | 1.35–2.25 V - Ensures robust turn-on margin with 3.3 V or 5 V gate drivers under temperature variation. |
Pinout & Package
IRF6613TR1 uses the DirectFET MT (Medium Size Can, T-Designation) package: 6.3 mm × 4.95 mm footprint, 0.7 mm height, copper substrate with top-side drain and bottom-side source terminals. No traditional leadframe; terminals are formed by plated copper can walls and solderable baseplate.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Top Metal Surface | Drain (D) | Primary high-side current path; thermally coupled to heatsink or power plane for dual-sided cooling. |
| Bottom Copper Pad | Source (S) | Low-inductance return path bonded directly to PCB copper; defines reference for gate drive loop. |
| Side Terminal (G) | Gate (G) | Edge-mounted gate pad minimizes gate loop inductance; compatible with standard stencil aperture designs. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low profile (0.7 mm) | Enables stacking of multiple power stages in <1.5 mm board height constraints for ultra-thin server modules. |
| Dual-sided cooling | Reduces total thermal resistance by 80% vs. SO-8 MOSFETs, allowing >30% higher power density in same footprint. |
| Cdv/dt immunity | Rated for high dV/dt stress in synchronous FET position - prevents spurious turn-on during high-slew-rate node transitions. |
| SO-8 footprint compatibility | Leverages existing PCB layouts and assembly tooling without redesign; supports vapor-phase, IR, and convection reflow. |
| Low Qgd/Qg ratio (30%) | Minimizes Miller plateau duration, reducing switching transition time and associated losses in hard-switched topologies. |
Applications
| Server Voltage Regulator Modules | Telecom Point-of-Load Converters |
|---|---|
|
Use Scenario: High-current, multi-phase buck converters supplying 0.8–1.8 V to CPUs and FPGAs in data center servers. IC Role / Device Role / Timing Role: Synchronous rectifier FET in high-side/low-side configuration, switching at 300–1000 kHz. Use Value: 3.4 mΩ RDS(on) and 42 nC Qg reduce combined conduction + switching losses by ≥18% versus SO-8 alternatives at 25 A load. |
Use Scenario: Isolated forward or active-clamp forward converters delivering 3.3–12 V to baseband processing units in 5G radio equipment. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier operating with 100–500 ns dead-time control. Use Value: 460 pF Crss and 1.35–2.25 V VGS(th) ensure reliable turn-off during rapid voltage reversal across transformer secondary. |
| Industrial Motor Drive Gate Drivers | Automotive ADAS Power Supplies |
|
Use Scenario: Half-bridge gate driver auxiliary supplies using synchronous buck regulators for isolated IGBT/MOSFET gate bias. IC Role / Device Role / Timing Role: Primary-side switch in 24 V input, 15 V output buck converter powering isolated gate driver ICs. Use Value: 150 A pulsed current rating supports short-circuit robustness during gate driver fault conditions. |
Use Scenario: Compact 12 V–5 V/3.3 V buck converters powering radar SoCs and camera image signal processors in automotive ADAS ECUs. IC Role / Device Role / Timing Role: High-efficiency power stage in space-constrained, thermally isolated ECU modules. Use Value: 0.7 mm profile and 1.0 °C/W RθJ-PCB enable full-load operation without external heatsink in sealed enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous rectifier MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF6623TR1 | Higher RDS(on) (4.2 mΩ @ 10 V), lower Qg (32 nC), same DirectFET MT package | Better suited for lower-current, higher-frequency (>2 MHz) POL where gate loss dominates | Select when optimizing for gate drive efficiency over conduction loss at <15 A loads |
| SiR626DP-T1-GE3 | 40 V, 3.0 mΩ @ 10 V, 52 nC Qg, PowerPAK SO-8 package, higher RθJA (20 °C/W) | Compatible with legacy SO-8 layouts but lacks dual-sided cooling and thermal performance | Choose only if DirectFET assembly infrastructure (stencil, reflow profile) is unavailable |
Compared with IRF6623TR1 and SiR626DP-T1-GE3, the IRF6613TR1 uniquely balances lowest RDS(on) and moderate Qg within a thermally superior package - making it optimal for high-current, high-density synchronous rectification where both conduction loss and thermal management are critical.
Availability
IRF6613TR1 is available at Aetrix Electronics and suitable for server VRMs, telecom POL converters, industrial motor drive auxiliary supplies, and automotive ADAS power modules requiring stable component supply across multi-year production cycles.
Supply support for IRF6613TR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensor, and automotive ICs with broad manufacturing scale and automotive-grade quality systems.
The IRF6613TR1 belongs to Infineon's HEXFET Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing, telecom, and industrial power systems where thermal density and switching integrity are paramount.
FAQ
What is the maximum continuous drain current for IRF6613TR1 at 70°C ambient?
The IRF6613TR1 supports 18 A continuous drain current at TA = 70°C with proper PCB copper area and airflow. This rating assumes mounting on a 1 in² double-sided copper board with thermal vias and no additional heatsink. Derating follows the 0.022 W/°C linear factor above 70°C ambient.
Does IRF6613TR1 require special soldering profiles due to its DirectFET package?
No - the DirectFET MT package is qualified for standard surface-mount reflow processes including convection, infrared, and vapor-phase soldering. Application note AN-1035 specifies stencil thickness (125 µm), aperture design (100% opening), and peak temperature (260°C for ≤10 sec) to ensure void-free solder joints on the bottom copper pad.
Can IRF6613TR1 be used in parallel configurations?
Yes - its positive RDS(on) temperature coefficient (38 mV/°C) ensures inherent current sharing stability. For two devices in parallel, maintain matched gate trace lengths (<2 mm difference) and symmetric thermal coupling to avoid imbalance; measured RDS(on) matching is typically within ±5% at 100°C junction temperature.
Is the body diode of IRF6613TR1 suitable for reverse recovery in hard-switched topologies?
The body diode has trr = 38–57 ns and Qrr = 42–63 nC at TJ = 25°C, making it suitable for synchronous rectification but not recommended for freewheeling in non-synchronous hard-switched converters. In synchronous buck applications, body diode conduction is limited to dead-time intervals and does not undergo full reverse recovery.
IRF6613TR1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- DirectFET™ Isometric MT
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 23A (Ta), 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.4mOhm @ 23A, 10V
- Vgs(th) (Max) @ Id:
- 2.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 63 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5950 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.8W (Ta), 89W (Tc)
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DIRECTFET™ MT
IRF6613TR1 FAQ
1.How can I place an order for IRF6613TR1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF6613TR1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF6613TR1 reliable?
The price and inventory of IRF6613TR1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6613TR1 is usually 5 days.
3.What payment methods are accepted for IRF6613TR1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6613TR1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF6613TR1?
IRF6613TR1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF6613TR1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF6613TR1?
For technical support, including IRF6613TR1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6613TR1 requirements.
6.How does Aetrix verify that IRF6613TR1 is sourced from the original manufacturer or authorized distributors?
All IRF6613TR1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6613TR1 meets industry standards.
7.What is the process for return or replacement of IRF6613TR1?
All IRF6613TR1 units undergo pre-shipment inspection (PSI). If there is an issue with IRF6613TR1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF6613TR1 part is unused and in its original packaging.
Return procedure for IRF6613TR1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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