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Infineon Technologies IRF6613TR1PBF
- Part No.:
- IRF6613TR1PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- DirectFET™ Isometric MT
- Datasheet:
-
IRF6613TR1PBF.pdf
- Description:
- MOSFET N-CH 40V 23A DIRECTFET
- Quantity:
- Payment:
- Shipping:
Inventory:3,059
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Product details
Overview
IRF6613TR1PBF from Infineon (formerly International Rectifier) is a 40V N-channel Power MOSFET in DirectFET MT package, optimized for synchronous buck converters in CPU core DC-DC applications. It delivers 3.4 mΩ RDS(on) @ VGS = 10 V, 42 nC total gate charge, and 80% improved thermal resistance via dual-sided cooling - enabling high-efficiency, high-frequency power delivery to modern processors.
For engineers reviewing the IRF6613TR1PBF datasheet, IRF6613TR1PBF pinout, IRF6613TR1PBF application, or IRF6613TR1PBF equivalent, key selection criteria include Cdv/dt immunity for robust synchronous FET operation, ultra-low profile (<0.7 mm), and compatibility with standard SO-8 PCB footprints and reflow processes per AN-1035.
Technical Context
This MOSFET employs HEXFET silicon with DirectFET packaging to simultaneously minimize conduction loss (via 2.6 mΩ typ. RDS(on)) and switching loss (via low Qgd = 12.6 nC and Qsw = 15.9 nC). Its gate threshold voltage (1.35–2.25 V) and negative temperature coefficient (∆VGS(th)/∆TJ = −5.8 mV/°C) support stable parallel operation in multiphase VRMs.
The device features enhanced Cdv/dt immunity critical for high-side synchronous FETs, validated by 18 A avalanche current rating and 1000 mJ single-pulse avalanche energy at TJ = 25°C. Thermal design leverages 1.4 °C/W RθJC and 1.0 °C/W RθJ-PCB under double-sided cooling configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40 V - Maximum drain-source blocking voltage for 12 V input bus designs with margin against transients. |
| RDS(on) max | 3.4 mΩ @ VGS = 10 V - Enables <1 W conduction loss at 23 A continuous drain current (TC = 25°C). |
| Qg typ. | 42 nC - Low gate drive power requirement supports high-frequency (>1 MHz) PWM control without excessive driver loss. |
| Ciss | 5950 pF - Input capacitance optimized for fast turn-on while maintaining EMI control in hard-switched topologies. |
| RθJ-PCB | 1.0 °C/W - Junction-to-PCB thermal resistance measured with double-sided cooling, enabling compact thermal layout. |
| ID @ TC = 25°C | 150 A - Continuous drain current rating under ideal heatsinking, supporting high-current multiphase phases. |
Pinout & Package
IRF6613TR1PBF uses the DirectFET MT (Medium Size Can, T-Designation) package - a surface-mount, leadless, copper-can structure with exposed drain on both top and bottom surfaces for dual-sided thermal management. Footprint matches SO-8 layout geometry, height ≤ 0.7 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Top Drain (D) | Drain connection (exposed copper can) | Primary heat transfer path to heatsink or thermal pad on PCB top layer. |
| Bottom Drain (D) | Drain connection (exposed copper can) | Secondary heat transfer path to PCB copper pour or heatsink on board underside. |
| Source (S) | Source terminal (copper strap) | Low-inductance source return path; minimizes switching loop area and voltage overshoot. |
| Gate (G) | Control terminal (copper strap) | Optimized for low-Qgd and high Cdv/dt immunity; requires <2.25 V threshold to avoid spurious turn-on. |
Key Features
| Feature | Design Value |
|---|---|
| Dual-sided cooling interface | 1.0 °C/W RθJ-PCB enables >80% lower thermal resistance vs. SO-8 MOSFETs, reducing junction temperature rise under 150 A load. |
| Cdv/dt-induced turn-on immunity | Validated for synchronous buck high-side operation with dV/dt ≥ 100 V/ns, preventing false triggering during fast switching transitions. |
| Ultra-low package inductance | Minimizes VDS ringing and EMI; supports clean 47 ns rise time and 4.9 ns fall time at 18 A load. |
| Lead-free RoHS compliance | Qualified for 260°C reflow; compatible with vapor phase, IR, and convection soldering per AN-1035 process guidelines. |
Applications
| Server CPU Core VRM | Laptop Voltage Regulator Module |
|---|---|
|
Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.3 V to Intel/AMD server CPUs operating above 3 MHz switching frequency. IC Role / Device Role / Timing Role: Synchronous high-side FET handling up to 60 A per phase with tight dead-time control. Use Value: 3.4 mΩ RDS(on) and 42 nC Qg reduce combined conduction + switching losses by ≥18% vs. legacy SO-8 MOSFETs at 1 MHz. |
Use Scenario: Compact, thermally constrained 2–3 phase VRM powering mobile APUs in ultrabooks with strict height budget (<0.7 mm). IC Role / Device Role / Timing Role: Low-profile, dual-cooled power switch enabling direct mounting to thin copper layers on both PCB sides. Use Value: 0.7 mm profile and 1.0 °C/W RθJ-PCB allow full 150 A thermal derating within 12 mm² footprint - no external heatsink required. |
| GPU Power Delivery | AI Accelerator Board Power Stage |
|
Use Scenario: High-transient current supply for discrete GPUs requiring rapid load-step response and minimal output impedance. IC Role / Device Role / Timing Role: High-Cdv/dt immunity FET used in high-side position to prevent shoot-through during aggressive di/dt events (>100 A/µs). Use Value: 18 A IAS and 1000 mJ EAS sustain unclamped inductive energy during transient overload without failure. |
Use Scenario: Dense, air-cooled AI training card with 8+ VRM phases delivering >500 W to ASICs at >1.2 V. IC Role / Device Role / Timing Role: Primary switching element in interleaved buck stages where thermal density exceeds 20 W/cm². Use Value: Dual-sided cooling reduces average junction temperature by 22°C vs. single-sided SO-8 equivalents, extending lifetime under continuous 100% load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-efficiency synchronous buck FET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF6623TR1PBF | Same DirectFET MT package but 30 V VDSS, 2.3 mΩ RDS(on) @ 10 V, 39 nC Qg | Better suited for 5 V input rails (e.g., PCIe auxiliary power); lower voltage rating limits use in 12 V primary VRMs. | Select when input voltage ≤ 6 V and lowest possible RDS(on) is prioritized over 40 V margin. |
| SiR626DP-T1-GE3 | Vishay 40 V TrenchFET in PowerPAK SO-8; 3.8 mΩ RDS(on), 45 nC Qg, single-sided cooling only | Compatible with legacy SO-8 layouts but lacks dual-sided thermal path - RθJA = 12.5 °C/W vs. 1.0 °C/W (PCB) | Choose only if board redesign for DirectFET footprint is not feasible and thermal headroom ≥ 35°C exists. |
Compared with IRF6623TR1PBF and SiR626DP-T1-GE3, the IRF6613TR1PBF uniquely balances 40 V robustness, ultra-low RDS(on), and dual-sided thermal performance - making it the only option capable of sustaining 150 A continuous current in space-constrained, high-frequency CPU VRMs without forced airflow.
Availability
IRF6613TR1PBF is available at Aetrix Electronics and suitable for server CPU core VRMs, laptop voltage regulator modules, and GPU power delivery systems requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for IRF6613TR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and industrial control ICs.
The IRF6613TR1PBF belongs to Infineon's DirectFET Power MOSFET product line - engineered specifically for high-density, high-efficiency DC-DC conversion in computing and AI infrastructure where thermal and electrical performance are co-constrained.
FAQ
What is the maximum continuous drain current for IRF6613TR1PBF at 70°C ambient?
At TA = 70°C with standard surface-mount conditions (1 in² Cu board), the continuous drain current is 18 A. This rating assumes natural convection cooling and accounts for thermal derating from the 150 A TC = 25°C limit using the 0.022 W/°C linear derating factor specified in the Absolute Maximum Ratings table.
Does IRF6613TR1PBF require special PCB layout for thermal performance?
Yes - optimal thermal performance requires copper pads on both top and bottom PCB layers connected to the exposed drain terminals, per DirectFET MT outline dimensions and AN-1035 recommendations. Minimum recommended top-side copper area is 25 mm²; bottom-side pad must be ≥ 100 mm² with ≥ 4 thermal vias (0.3 mm diameter, 0.8 mm pitch).
Can IRF6613TR1PBF be used as a low-side switch in synchronous rectification?
Yes - its 1.0 V body diode forward voltage (VSD) and 38 ns reverse recovery time (trr) make it suitable for low-side synchronous rectification in buck converters. However, its gate threshold (1.35–2.25 V) necessitates precise gate drive timing to avoid cross-conduction during dead-time intervals.
Is IRF6613TR1PBF pin-compatible with standard SO-8 MOSFETs?
No - although its PCB footprint matches SO-8 geometry, the DirectFET MT package has non-standard terminal configuration: dual exposed drains (top/bottom), single source strap, and single gate strap - requiring dedicated land patterns and stencil design per AN-1035, not drop-in replacement for gull-wing SO-8 devices.
IRF6613TR1PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- DirectFET™ Isometric MT
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 23A (Ta), 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.4mOhm @ 23A, 10V
- Vgs(th) (Max) @ Id:
- 2.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 63 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5950 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.8W (Ta), 89W (Tc)
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DIRECTFET™ MT
IRF6613TR1PBF FAQ
1.How can I place an order for IRF6613TR1PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF6613TR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF6613TR1PBF reliable?
The price and inventory of IRF6613TR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6613TR1PBF is usually 5 days.
3.What payment methods are accepted for IRF6613TR1PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6613TR1PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF6613TR1PBF?
IRF6613TR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF6613TR1PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF6613TR1PBF?
For technical support, including IRF6613TR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6613TR1PBF requirements.
6.How does Aetrix verify that IRF6613TR1PBF is sourced from the original manufacturer or authorized distributors?
All IRF6613TR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6613TR1PBF meets industry standards.
7.What is the process for return or replacement of IRF6613TR1PBF?
All IRF6613TR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6613TR1PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF6613TR1PBF part is unused and in its original packaging.
Return procedure for IRF6613TR1PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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