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Infineon Technologies IRF6614TR1PBF
- Part No.:
- IRF6614TR1PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- DirectFET™ Isometric ST
- Datasheet:
-
IRF6614TR1PBF.pdf
- Description:
- MOSFET N-CH 40V 12.7A DIRECTFET
- Quantity:
- Payment:
- Shipping:
Inventory:7,146
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Product details
Overview
IRF6614TR1PBF from Infineon Technologies is an N-channel enhancement-mode Power MOSFET in DirectFET® ST package, optimized for synchronous buck converters operating from 12 V bus. It delivers RDS(on) = 5.9 mΩ @ VGS = 10 V, Qg = 19 nC, and ultra-low 0.7 mm profile, enabling high-efficiency CPU core DC-DC conversion in space-constrained server and notebook power stages.
For engineers reviewing the IRF6614TR1PBF datasheet, IRF6614TR1PBF pinout, IRF6614TR1PBF application, or IRF6614TR1PBF equivalent, key selection criteria include low gate charge for fast switching, dual-sided cooling compatibility, 40 V VDSS rating for 12 V input rails, and validated performance at 12.7 A continuous drain current with thermal resistance RθJC = 3.0 °C/W.
Technical Context
This MOSFET employs HEXFET® silicon on a copper substrate DirectFET® ST package, integrating drain-connected top-side metal for dual-sided thermal management. Its gate threshold voltage (VGS(th) = 1.8 V typ.) and low Qgd/Qg ratio (6.0/19 nC) support stable operation in high-frequency synchronous rectification with minimal shoot-through risk.
The device exhibits tightly controlled RDS(on) temperature coefficient (38 mV/°C), low output charge (Qoss = 9.5 nC), and fast reverse recovery (trr = 15 ns, Qrr = 5.5 nC), making it suitable for hard-switched topologies where conduction and switching losses must be jointly minimized.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40 V max - supports 12 V input bus with 3.3× safety margin against transients |
| RDS(on) | 5.9 mΩ @ 10 V - enables <1.3 W conduction loss at 12.7 A in CPU core rail |
| Qg | 19 nC - reduces gate drive power and allows use of low-current drivers |
| tr/tf | 27 ns / 3.6 ns - supports >1 MHz switching without excessive EMI |
| RθJC | 3.0 °C/W - enables 55 W power dissipation with 165 °C max junction rise over case |
| Qrr | 5.5 nC - limits body diode recovery loss in high-duty-cycle buck phases |
| VGS(th) | 1.8 V typ. - ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers |
Pinout & Package
IRF6614TR1PBF uses the DirectFET® ST (Small Size Can, T-Designation) package: surface-mount, top-side drain, bottom-side source/gate, 4.8 × 3.8 × 0.7 mm footprint, compatible with MICRO-8 layout geometry and vapor-phase reflow per AN-1035.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Top Metal Pad | Drain (D) | Primary heat path to heatsink or PCB copper; electrically connected to drain terminal |
| Bottom Left Pad | Source (S) | Low-inductance return path; forms part of dual-sided cooling interface |
| Bottom Right Pad | Gate (G) | Control terminal with 1.0–1.5 Ω internal gate resistance; isolated from drain/source |
Key Features
| Feature | Design Value |
|---|---|
| Dual-sided cooling interface | Enables simultaneous top-case and bottom-PCB thermal transfer, improving thermal resistance by 80% vs. SO-8 |
| Ultra-low profile (0.7 mm) | Reduces board height in stacked power modules and thin client designs |
| Low Qgd/Qg ratio (32%) | Minimizes Miller-induced switching delay and improves controllability in high-dV/dt environments |
| Optimized for 12 V synchronous buck | Balances RDS(on), Qg, and Qoss specifically for control-FET socket in VR12/VR13 applications |
| RoHS-compliant lead-free | Qualified for 260 °C reflow; meets JEDEC J-STD-020 moisture sensitivity level 1 |
Applications
| CPU Core Voltage Regulator | Server Memory Rail Converter |
|---|---|
Use Scenario: High-current, high-frequency step-down converter supplying Intel/AMD CPU cores in data center servers. IC Role / Device Role / Timing Role: Control FET in synchronous buck stage, switching at 300–1000 kHz with 12 V input and sub-1 V output. Use Value: 5.9 mΩ RDS(on) and 19 nC Qg reduce combined conduction + switching loss by ≥18% versus SO-8 equivalents at 12.7 A. | Use Scenario: Point-of-load regulator delivering 1.2 V @ 40 A to DDR4/DDR5 memory subsystems. IC Role / Device Role / Timing Role: High-side switch in multiphase buck topology with interleaved gate drive. Use Value: 0.7 mm profile allows dense phase stacking; dual-sided cooling maintains TJ < 105 °C under full load. |
| Thin Client Notebook PSU | GPU Core Power Stage |
Use Scenario: Compact 12 V input buck converter powering SoC in fanless ultrabooks and edge AI clients. IC Role / Device Role / Timing Role: Primary switching FET in single-phase VR with integrated controller and ceramic output capacitors. Use Value: Low Qrr (5.5 nC) and fast tf (3.6 ns) suppress body diode ringing, reducing EMI filter size by 30%. | Use Scenario: Multi-phase GPU core rail (0.8–1.2 V) in gaming laptops and AI accelerators. IC Role / Device Role / Timing Role: Control FET in 4–6 phase buck array, driven by digital PWM controller. Use Value: RθJC = 3.0 °C/W enables direct mounting to copper-backed heatsink, eliminating thermal interface material. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF6622TR1PBF | RDS(on) = 3.3 mΩ @ 10 V, Qg = 27 nC, same DirectFET ST package | Higher conduction efficiency but increased switching loss due to higher Qg | Select when priority is minimizing I²R loss at >15 A, accepting higher gate drive power |
| SiR626DP-T1-GE3 | RDS(on) = 5.7 mΩ @ 10 V, Qg = 22 nC, PowerPAK® SO-8 package (1.6 mm height) | Larger footprint and single-sided cooling only; lower thermal performance (RθJC = 4.5 °C/W) | Select when legacy SO-8 layout reuse is required and thermal headroom exists |
Compared with IRF6614TR1PBF, IRF6622TR1PBF trades higher gate charge for lower RDS(on), while SiR626DP-T1-GE3 sacrifices thermal efficiency and profile for package compatibility-making IRF6614TR1PBF optimal for new designs prioritizing density, thermal headroom, and balanced loss distribution.
Availability
IRF6614TR1PBF is available at Aetrix Electronics and suitable for CPU core voltage regulators, server memory rail converters, and GPU power stages requiring stable component supply across multi-year production cycles.
Supply support for IRF6614TR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and industrial control ICs, with global manufacturing and qualification infrastructure.
The DirectFET® product line was developed to replace traditional leaded and SO-8 packages in high-frequency power conversion, targeting server, computing, and telecom applications demanding ultra-low inductance and superior thermal performance.
FAQ
What is the maximum continuous drain current at 70°C ambient?
The IRF6614TR1PBF supports 10.1 A continuous drain current at TA = 70°C with proper PCB copper area and airflow. This rating assumes surface mounting on a 1 in² copper board per datasheet test condition; actual current capability increases with enhanced heatsinking or forced convection.
Is IRF6614TR1PBF pin-compatible with other DirectFET ST devices?
Yes - all DirectFET ST-outline parts (e.g., IRF6613, IRF6622) share identical mechanical footprint, pad layout, and terminal assignment (top drain, bottom source/gate). No PCB redesign is needed when substituting within the ST family, though gate drive and thermal design must be verified per RDS(on) and Qg.
Does this MOSFET require a negative gate turn-off voltage?
No - the IRF6614TR1PBF has a gate threshold voltage of 1.8 V (typ.) and is fully enhanced at VGS = 4.5 V. Negative turn-off is not required; however, applying –2 V to 0 V during off-state improves noise immunity in high-dV/dt environments per application note AN-1035.
Can IRF6614TR1PBF be used in avalanche-rated circuits?
Yes - it is rated for 102 mJ single-pulse avalanche energy (EAS) at IAS = 10.2 A. Operation in unclamped inductive switching requires strict adherence to pulse width (<400 µs), duty cycle (<2%), and starting TJ ≤ 25°C per absolute maximum ratings; no repetitive avalanche capability is specified.
IRF6614TR1PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- DirectFET™ Isometric ST
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 12.7A (Ta), 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8.3mOhm @ 12.7A, 10V
- Vgs(th) (Max) @ Id:
- 2.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 29 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2560 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.1W (Ta), 42W (Tc)
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DIRECTFET™ ST
IRF6614TR1PBF FAQ
1.How can I place an order for IRF6614TR1PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF6614TR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF6614TR1PBF reliable?
The price and inventory of IRF6614TR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6614TR1PBF is usually 5 days.
3.What payment methods are accepted for IRF6614TR1PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6614TR1PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF6614TR1PBF?
IRF6614TR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF6614TR1PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF6614TR1PBF?
For technical support, including IRF6614TR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6614TR1PBF requirements.
6.How does Aetrix verify that IRF6614TR1PBF is sourced from the original manufacturer or authorized distributors?
All IRF6614TR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6614TR1PBF meets industry standards.
7.What is the process for return or replacement of IRF6614TR1PBF?
All IRF6614TR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6614TR1PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF6614TR1PBF part is unused and in its original packaging.
Return procedure for IRF6614TR1PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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