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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6616

Name: IRF6616
Brand: Infineon Technologies
SKU: IRF6616
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6616

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MX

Datasheet:: IRF6616.pdf

Description:: MOSFET N-CH 30V 19A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Inventory:3,309

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Product details

Overview

IRF6616 from Infineon Technologies (acquired International Rectifier) is a 40V N-channel enhancement-mode Power MOSFET in DirectFET® packaging, optimized for high-frequency synchronous rectification and buck converter applications. It delivers 3.7 mΩ R_DS(on) at V_GS = 10 V, 29 nC total gate charge, and ultra-low 1.4 °C/W junction-to-case thermal resistance, enabling efficient operation in 100W secondary-side DC-DC converters.

For engineers reviewing the IRF6616 datasheet, IRF6616 pinout, IRF6616 application, or IRF6616 equivalent, key selection criteria include its dual-sided cooling capability, 4.6 mΩ R_DS(on) at 4.5 V drive, 15 A continuous drain current at T_C = 25°C, low 285 pF Crss, and compatibility with standard SMT reflow profiles per AN-1035.

Technical Context

The IRF6616 employs HEXFET® silicon with trench-gate structure and is packaged in a copper-can DirectFET™ outline (SQ/SX variant), where the drain is electrically and thermally connected to both top and bottom metal surfaces. Its gate threshold voltage of 1.8 V (typ.) enables robust 4.5 V logic-level drive while maintaining low leakage (I_DSS ≤ 1.0 μA).

Designed for clamped inductive switching, it supports 15 A avalanche current (I_AS) and 200 mJ single-pulse avalanche energy (E_AS) at I_D = 3.7 A. The device exhibits 15 nC output charge (Q_oss) and 33 nC reverse recovery charge (Q_rr), critical for minimizing turn-off loss in synchronous rectifiers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V maximum - defines safe operating voltage headroom in 30V-class non-isolated buck and secondary-side rectifier circuits.
R_DS(on) @ 10 V	3.7 mΩ typical - enables <1 W conduction loss at 15 A, critical for >95% efficiency in high-current point-of-load converters.
R_DS(on) @ 4.5 V	4.6 mΩ typical - ensures stable on-state performance under logic-level gate drive, reducing need for level-shifting circuitry.
Q_g total	29 nC typical - balances switching speed and drive power, supporting >1 MHz operation with moderate gate driver strength.
Q_gd	9.4 nC typical - low Miller charge minimizes dv/dt-induced false turn-on risk during hard-switching transitions.
Thermal R_θJC	1.4 °C/W - allows direct heatsinking to PCB copper or external clip, enabling dual-sided thermal management without soldered heatsinks.
Q_rr	33 nC typical - reduces body-diode recovery loss and EMI in synchronous rectification, especially at light loads.

Pinout & Package

IRF6616 uses the DirectFET® SQ package: a surface-mount, leadless, copper-can construction with top-side drain (D), bottom-side drain (D), and perimeter-mounted source (S) and gate (G) terminals. The package height is <0.7 mm and footprint matches SO-8 layout.

Pin/Terminal	Circuit Role	Design Meaning
Top Metal Pad	Drain (D)	Primary high-current drain connection; thermally and electrically tied to internal die backside - used for top-side cooling and high-frequency return path.
Bottom Metal Pad	Drain (D)	Secondary drain connection; provides low-inductance, low-resistance PCB mounting and bottom-side thermal transfer to copper pour or heatsink.
Perimeter Terminal 1 (G)	Gate (G)	Signal input controlling channel conduction; low 1.3 Ω gate resistance supports fast edge rates with minimal ringing.
Perimeter Terminal 2 (S)	Source (S)	Reference node for gate drive and current sensing; low-inductance connection essential for accurate synchronous FET control timing.

Key Features

Feature	Design Value
Dual-sided cooling	Enables simultaneous thermal interface to top and bottom metal surfaces, improving thermal resistance by 80% vs. SO-8 packages.
Ultra-low package inductance	Minimizes voltage overshoot and switching loss during high di/dt transitions (>500 A/μs), critical for MHz-range converters.
Optimized for 4.5 V drive	Guarantees full enhancement at logic-level voltages, eliminating need for bootstrap or charge-pump gate drivers in many buck designs.
Low Q_gd/Q_g ratio	0.32 ratio (9.4/29 nC) enhances immunity to Miller-induced shoot-through in half-bridge configurations.
RoHS-compliant, lead-free	Meets IPC-J-STD-020D reflow profile requirements and supports vapor-phase, IR, and convection soldering per AN-1035.

Applications

Server VRM Secondary Side

USB-C PD 100W Adapters

Use Scenario: High-current, high-efficiency synchronous rectification in multiphase buck converters supplying modern CPUs/GPUs.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 300–1000 kHz, replacing Schottky diodes to reduce conduction loss.

Use Value: 3.7 mΩ R_DS(on) cuts conduction loss by >60% vs. 40V Schottky, enabling >96% efficiency at 100A load with minimal thermal derating.

Use Scenario: Secondary-side synchronous rectification in compact, high-density USB-C Power Delivery adapters up to 100W.

IC Role / Device Role / Timing Role: N-channel MOSFET controlled by dedicated SR controller (e.g., MP6908), handling 15A peak currents at 100–300 kHz.

Use Value: 0.7 mm profile and dual-sided cooling allow placement on both PCB sides, maximizing power density while maintaining <60°C case temperature.

Non-Isolated Buck Converters

Industrial PoL Modules

Use Scenario: Input-stage switching FET in 24V–48V input non-isolated buck regulators powering FPGAs or ASICs.

IC Role / Device Role / Timing Role: High-side switch in buck topology, requiring robust avalanche rating and low Q_gd for reliable PWM control.

Use Value: 200 mJ E_AS and 15 A I_AS ensure ruggedness against inductive transients; 29 nC Q_g enables clean 500 kHz switching with 1-A gate drivers.

Use Scenario: Compact, thermally constrained point-of-load modules for factory automation and PLC I/O modules.

IC Role / Device Role / Timing Role: Primary power switch in 12V-input, 3.3V/5V-output DC-DC modules with strict size and thermal limits.

Use Value: DirectFET® package allows 1.4 °C/W R_θJC into 2 oz copper, enabling 15A continuous operation in 12 mm × 12 mm footprints without external heatsinks.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IRF6622	Same DirectFET SQ package, but 30V V_DS, 2.9 mΩ R_DS(on) @ 10V, higher Q_g (34 nC)	Better conduction loss at lower bus voltages (<24V); less suitable above 30V due to reduced avalanche margin	Select when optimizing for lowest R_DS(on) in sub-24V systems and avalanche stress is minimal
Vishay SiR626DP	40V TrenchFET® in PowerPAK® SO-8, 3.8 mΩ R_DS(on) @ 10V, 32 nC Q_g, R_θJC = 2.5 °C/W	Higher thermal resistance limits power density; no dual-sided cooling; compatible with legacy SO-8 layouts	Select when board layout reuse is mandatory and thermal budget allows ~30% higher junction temperature rise

Compared with IRF6622 and SiR626DP, the IRF6616 uniquely combines 40V rating, sub-4 mΩ conduction, dual-sided cooling, and <1.5 °C/W thermal resistance - making it optimal for space-constrained, high-efficiency 100W synchronous rectifiers where thermal headroom and voltage margin are both critical.

Availability

IRF6616 is available at Aetrix Electronics and suitable for server VRMs, USB-C PD adapters, non-isolated buck converters, and industrial PoL modules requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for IRF6616 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The IRF6616 belongs to Infineon's DirectFET® Power MOSFET product line, engineered specifically for high-frequency, high-efficiency DC-DC conversion in computing, communications, and consumer power supplies where thermal density and switching loss are primary constraints.

FAQ

What is the maximum continuous drain current for IRF6616 at 70°C ambient?

The IRF6616 supports 19 A continuous drain current at T_A = 70°C with proper PCB copper area (1 in² Cu board). This rating assumes surface-mount assembly on FR4 with 2 oz copper, no forced airflow, and thermal vias to inner ground planes. Derating follows linear 1.8 W/°C beyond 70°C ambient.

Can IRF6616 be used in avalanche mode repeatedly?

No - the IRF6616 is rated for single-pulse avalanche only (E_AS = 200 mJ max at I_D = 3.7 A). Repetitive avalanche operation is not characterized or guaranteed. Circuit design must avoid clamped inductive switching during normal operation using snubbers or layout optimization.

Does IRF6616 require special PCB layout considerations for thermal performance?

Yes - optimal thermal performance requires symmetric copper pours on both top and bottom layers connected to the top and bottom drain pads via ≥8 thermal vias (0.3 mm diameter, 0.6 mm pitch). The gate and source perimeter terminals must be routed with short, low-inductance traces to minimize switching oscillation and EMI.

Is IRF6616 compatible with lead-free reflow profiles?

Yes - the IRF6616 is RoHS-compliant and qualified for standard lead-free reflow per IPC-J-STD-020D, including peak temperatures up to 260°C for 30 seconds. Reflow must follow Infineon Application Note AN-1035 for DirectFET™ packages to prevent warpage or voiding in the copper-can solder joint.

IRF6616 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MX

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 19A (Ta), 106A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5mOhm @ 19A, 10V

Vgs(th) (Max) @ Id:: 2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 44 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3765 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 89W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MX

IRF6616 FAQ

1.How can I place an order for IRF6616 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6616 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6616 reliable?

The price and inventory of IRF6616 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6616 is usually 5 days.

3.What payment methods are accepted for IRF6616?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6616 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6616?

IRF6616 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6616 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6616?

For technical support, including IRF6616 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6616 requirements.

6.How does Aetrix verify that IRF6616 is sourced from the original manufacturer or authorized distributors?

All IRF6616 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6616 meets industry standards.

7.What is the process for return or replacement of IRF6616?

All IRF6616 units undergo pre-shipment inspection (PSI). If there is an issue with IRF6616, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6616 part is unused and in its original packaging.

Return procedure for IRF6616:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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