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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6616TR1

Name: IRF6616TR1
Brand: Infineon Technologies
SKU: IRF6616TR1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6616TR1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MX

Datasheet:: IRF6616TR1.pdf

Description:: MOSFET N-CH 30V 19A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Inventory:6,850

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Product details

Overview

IRF6616 from Infineon Technologies (formerly International Rectifier) is a 40V N-channel enhancement-mode Power MOSFET in DirectFET® packaging, optimized for high-frequency synchronous rectification and buck converter applications. It delivers 3.7 mΩ R_DS(on) at V_GS = 10 V, 29 nC total gate charge, and ultra-low 1.4 °C/W junction-to-case thermal resistance, enabling high-efficiency DC-DC conversion up to 100W in server VRMs and notebook power stages.

For engineers reviewing the IRF6616 datasheet, IRF6616 pinout, IRF6616 application, or IRF6616 equivalent, key selection criteria include its dual-sided cooling capability, 4.6 mΩ R_DS(on) at 4.5 V gate drive, 15 A continuous drain current at T_C = 25°C, and compatibility with standard SO-8 PCB footprints while achieving <0.7 mm profile height.

Technical Context

The IRF6616 employs trench-gated HEXFET® silicon combined with copper-clad DirectFET® packaging to minimize both conduction loss (via low R_DS(on)) and switching loss (via low Q_g, Q_gd, and package inductance). Its gate threshold voltage of 1.8 V (typ.) enables robust 4.5 V logic-level drive in secondary-side synchronous rectifiers.

Thermal performance is enhanced by direct top-side (Drain) and bottom-side (Source) thermal paths-enabling 80% lower junction-to-ambient thermal resistance versus SO-8 equivalents when mounted on double-sided cooled PCBs. The body diode exhibits 33 nC reverse recovery charge and 15 ns trr, supporting fast commutation in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V maximum - supports 30 V bus systems with sufficient voltage headroom for transient spikes
R_DS(on) @ 10 V	3.7 mΩ typical - enables <1 W conduction loss at 15 A in 12 V input buck converters
R_DS(on) @ 4.5 V	4.6 mΩ typical - ensures stable operation with 5 V or 4.5 V gate drivers in synchronous rectification
Q_g total	29 nC typical - reduces gate drive power and enables >1 MHz switching in high-density converters
Q_gd	9.4 nC typical - minimizes Miller-induced switching delay and improves dv/dt immunity
R_thJC	1.4 °C/W typical - allows >89 W power dissipation with modest heatsinking at T_C = 25°C
V_GS(th)	1.8 V typical - ensures reliable turn-on with logic-level controllers and avoids false triggering

Pinout & Package

IRF6616 uses the DirectFET® M package: ultra-thin (0.7 mm max), top-side Drain-exposed copper can, bottom-side Source-exposed copper pad, and dual-side thermal interface. Dimensions: 6.25 × 4.80 × 0.70 mm (L × W × H), compatible with SO-8 layout footprints.

Pin/Terminal	Circuit Role	Design Meaning
Top Metal (Drain)	Drain terminal (D)	Exposed copper surface on top - primary heat path to heatsink or thermal plane above PCB
Bottom Metal (Source)	Source terminal (S)	Exposed copper surface on bottom - primary heat path to PCB copper and thermal vias below
Side Pad (Gate)	Gate terminal (G)	Edge-mounted solderable pad - low-inductance gate connection with minimal loop area

Key Features

Feature	Design Value
Dual-sided cooling	Enables simultaneous top- and bottom-side thermal extraction, reducing effective R_thJA to 12.5 °C/W on optimized boards
Ultra-low package inductance	Minimizes switching ringing and EMI in >500 kHz converters due to short, symmetric source/gate return paths
Logic-level gate drive	Guaranteed turn-on at 4.5 V with 4.6 mΩ R_DS(on), eliminating need for gate boosters in 5 V control domains
RoHS-compliant, lead-free	Meets JEDEC J-STD-020 reflow profile; compatible with vapor-phase, IR, and convection soldering per AN-1035

Applications

Server VRM Secondary Side

Notebook CPU Core Power

Use Scenario: Synchronous rectification in multiphase 12 V → 1.0–1.8 V VRMs powering Intel/AMD CPUs.

IC Role / Device Role / Timing Role: Low-side switch in synchronous buck stage, operating at 300–600 kHz with 4.5 V gate drive.

Use Value: 3.7 mΩ R_DS(on) and 29 nC Q_g reduce conduction + switching losses by ~22% vs. SO-8 alternatives, improving full-load efficiency to >92%.

Use Scenario: Single-phase or dual-phase core power delivery in ultrabooks with tight height constraints.

IC Role / Device Role / Timing Role: High-current (15 A continuous) low-side FET in compact 12 V → 1.2 V buck converter.

Use Value: 0.7 mm profile enables stacking under thin heat pipes; dual-sided cooling maintains T_J < 105°C at 100W output without external heatsink.

Telecom DC-DC Modules

Industrial PoL Converters

Use Scenario: 48 V input → 3.3/5 V isolated or non-isolated point-of-load converters in telecom line cards.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in active clamp forward or LLC resonant converters.

Use Value: 40 V V_DS rating provides margin over 36 V nominal bus; 33 nC Q_rr ensures clean body-diode commutation during dead-time.

Use Scenario: High-reliability 24 V → 3.3 V/5 V PoL supplies in programmable logic controllers and motor drives.

IC Role / Device Role / Timing Role: Primary-side high-frequency switch in non-isolated buck regulators requiring >90% efficiency at 500 kHz.

Use Value: 1.4 °C/W R_thJC and -40°C to +150°C T_J rating support operation in sealed enclosures with limited airflow.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6622TR1PBF	Same DirectFET® M package, but 30 V V_DS, 2.8 mΩ R_DS(on) @ 10 V, higher Q_g (35 nC)	Better for ≤24 V input systems where lower R_DS(on) outweighs reduced voltage margin	Select when system bus voltage is ≤28 V and lowest conduction loss is prioritized over avalanche robustness
SiR626DP-T1-GE3	SO-8 package, 40 V V_DS, 3.8 mΩ R_DS(on) @ 10 V, 32 nC Q_g, 2.5 °C/W R_thJC	Lacks dual-sided cooling; requires larger PCB copper area or external heatsink for same power handling	Choose when legacy SO-8 layout reuse is mandatory and thermal budget allows higher R_thJA

Compared with IRF6622TR1PBF and SiR626DP-T1-GE3, the IRF6616 uniquely balances 40 V rating, sub-4 mΩ R_DS(on), and 1.4 °C/W thermal resistance in a 0.7 mm profile-making it optimal for space-constrained, high-efficiency 12–36 V synchronous buck designs where thermal headroom is critical.

Availability

IRF6616 is available at Aetrix Electronics and suitable for server VRMs, notebook CPU power stages, telecom DC-DC modules, and industrial PoL converters requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle availability.

Supply support for IRF6616 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF6616 belongs to Infineon's DirectFET® Power MOSFET product line, engineered specifically for high-frequency, high-efficiency DC-DC conversion in computing and communications infrastructure where thermal density and switching loss are primary design constraints.

FAQ

What is the maximum continuous drain current for IRF6616 at 70°C ambient temperature?

The IRF6616 supports 19 A continuous drain current at T_A = 70°C with proper PCB copper area and airflow. This rating assumes surface mounting on a 1 in² copper board in still air, per datasheet Figure 3 and Absolute Maximum Ratings table. Derating is linear at 1.8 W/°C above 70°C ambient.

Does IRF6616 require a gate resistor for stability in 500 kHz switching applications?

Yes-a 2–10 Ω gate resistor is recommended to dampen potential oscillation caused by PCB trace inductance interacting with the device's 9.4 nC Q_gd and low package inductance. Layout best practices include minimizing gate loop area and using a dedicated ground pour beneath the gate pad, as detailed in Application Note AN-1035.

Can IRF6616 be used in avalanche-rated circuits?

Yes-the IRF6616 is rated for 150 mJ single-pulse avalanche energy (E_AS) at I_D = 15 A, with guaranteed ruggedness per JEDEC JESD24-11. It is suitable for unclamped inductive switching in synchronous rectifiers where body diode recovery must absorb stored inductor energy, provided peak V_DS remains ≤40 V.

Is IRF6616 compatible with lead-free reflow profiles?

Yes-IRF6616 is RoHS-compliant and qualified for standard lead-free reflow per JEDEC J-STD-020. Peak temperature tolerance is 260°C for 30 seconds. Successful assembly requires adherence to Infineon's DirectFET®-specific guidelines in AN-1035, including preheat ramp rates and soak time to prevent delamination.

IRF6616TR1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MX

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 19A (Ta), 106A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5mOhm @ 19A, 10V

Vgs(th) (Max) @ Id:: 2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 44 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3765 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 89W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MX

IRF6616TR1 FAQ

1.How can I place an order for IRF6616TR1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6616TR1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6616TR1 reliable?

The price and inventory of IRF6616TR1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6616TR1 is usually 5 days.

3.What payment methods are accepted for IRF6616TR1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6616TR1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6616TR1?

IRF6616TR1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6616TR1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6616TR1?

For technical support, including IRF6616TR1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6616TR1 requirements.

6.How does Aetrix verify that IRF6616TR1 is sourced from the original manufacturer or authorized distributors?

All IRF6616TR1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6616TR1 meets industry standards.

7.What is the process for return or replacement of IRF6616TR1?

All IRF6616TR1 units undergo pre-shipment inspection (PSI). If there is an issue with IRF6616TR1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6616TR1 part is unused and in its original packaging.

Return procedure for IRF6616TR1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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