My Inquiry
My Account
Infineon Technologies IRF6616TR1PBF
- Part No.:
- IRF6616TR1PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- DirectFET™ Isometric MX
- Datasheet:
-
IRF6616TR1PBF.pdf
- Description:
- MOSFET N-CH 40V 19A DIRECTFET
- Quantity:
- Payment:
- Shipping:
Inventory:8,038
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRF6616TR1PBF from Infineon Technologies is a 40V, 19A N-channel Power MOSFET in DirectFET® MX package, optimized for high-frequency synchronous rectification with RDS(on) = 3.7 mΩ @ VGS = 10 V and total gate charge Qg = 29 nC. It delivers ultra-low conduction and switching losses in DC-DC converters powering modern processors and secondary-side rectification up to 100W.
For engineers reviewing the IRF6616TR1PBF datasheet, IRF6616TR1PBF pinout, IRF6616TR1PBF application, or IRF6616TR1PBF equivalent, key selection criteria include its dual-sided cooling capability, 1.4°C/W junction-to-case thermal resistance, 4.6 mΩ RDS(on) at 4.5 V drive, low 285 pF Crss, and compatibility with standard SMT reflow processes per AN-1035.
Technical Context
The IRF6616TR1PBF uses trench-gated HEXFET® silicon combined with copper-clad DirectFET® MX packaging to achieve simultaneous low RDS(on) and low Qg, enabling high-efficiency operation above 500 kHz. Its gate threshold voltage (1.35–2.25 V) supports 4.5 V logic-level drive while maintaining robust noise immunity.
Thermal performance is enhanced by direct top-side (Drain) and bottom-side (Source) thermal paths, reducing RθJC to 1.4°C/W and improving thermal transfer by 80% versus SO-8 equivalents. The body diode exhibits fast reverse recovery (trr = 15–23 ns, Qrr = 33–50 nC), critical for synchronous buck and LLC resonant converter secondary-side operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V maximum - supports 30 V bus systems with sufficient voltage headroom for transient spikes in non-isolated buck converters. |
| RDS(on) @ 10 V | 3.7 mΩ typical - enables <1 W conduction loss at 19 A continuous drain current in compact 100W power stages. |
| RDS(on) @ 4.5 V | 4.6 mΩ typical - ensures reliable turn-on with 5 V or 4.5 V gate drivers without requiring level-shifting circuitry. |
| Qg | 29 nC typical - reduces switching energy loss and driver power demand in high-frequency (>1 MHz) applications. |
| Crss | 285 pF typical - minimizes Miller-induced shoot-through risk and improves controllability during hard-switching transitions. |
| trr | 15 ns typical - limits body diode reverse recovery loss and EMI generation in synchronous rectifier configurations. |
| RθJC | 1.4°C/W - allows efficient heat extraction from both top (Drain) and bottom (Source) surfaces via PCB copper and clip heatsinks. |
Pinout & Package
IRF6616TR1PBF uses the DirectFET® MX surface-mount package (6.25 × 4.80 × 0.35 mm), featuring exposed Drain on top and Source on bottom for dual-sided thermal management. No separate gate pad - gate connects exclusively through the side-mounted terminal.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Top Metal (Drain) | Drain connection / Thermal path | Electrically and thermally connected to internal drain region; serves as primary heat dissipation surface when mounted to heatsink or thermal pad. |
| Bottom Metal (Source) | Source connection / Thermal path | Electrically tied to source terminals and provides secondary thermal interface to PCB copper; enables symmetric thermal spreading. |
| Side Terminal (Gate) | Gate control input | Low-inductance lateral connection for fast, low-loss gate driving; isolated from Drain/Source metallization to prevent coupling. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low package inductance | Minimizes voltage overshoot and ringing during hard switching, enabling stable operation without snubbers in 500 kHz–1 MHz converters. |
| Dual-sided cooling | Reduces effective thermal resistance by 80% vs. SO-8, allowing >2× higher power density in space-constrained server VRMs and telecom PSUs. |
| Optimized for 4.5 V drive | Guarantees full enhancement at logic-level gate voltages, eliminating need for bootstrap or charge-pump circuits in low-voltage synchronous rectifiers. |
| Low Qgd/Qg ratio | 9.4 nC / 29 nC ≈ 0.32 - improves switching controllability and reduces sensitivity to Miller feedback in high-dV/dt environments. |
Applications
| Server Voltage Regulator Modules (VRMs) | Telecom DC-DC Converters |
|---|---|
|
Use Scenario: Secondary-side synchronous rectification in multiphase 12 V → 1.8 V VRMs for Intel/AMD CPUs. IC Role / Device Role / Timing Role: Low-side switch replacing Schottky diodes to reduce conduction loss and improve efficiency at >100 A load currents. Use Value: Achieves >95% efficiency at 500 kHz switching with 3.7 mΩ RDS(on) and dual-sided cooling enabling 25°C lower junction temperature vs. SO-8 alternatives. |
Use Scenario: Isolated forward or active-clamp forward converter output stage in 48 V telecom power supplies. IC Role / Device Role / Timing Role: Synchronous rectifier operating at 300–600 kHz with tight duty-cycle control and fast body-diode recovery. Use Value: 15 ns trr and 33 nC Qrr minimize dead-time loss and EMI, supporting compliance with EN 55022 Class B conducted emissions limits. |
| USB-C PD Fast Chargers | Industrial Motor Drive Gate Drivers |
|
Use Scenario: Secondary-side synchronous rectification in 65–100 W GaN-based USB-C PD adapters. IC Role / Device Role / Timing Role: High-efficiency 40 V switch handling 15 A peak current with minimal thermal derating at 100°C ambient. Use Value: 1.4°C/W RθJC and 0.7 mm profile enable integration into ultra-thin adapter designs without external heatsinks. |
Use Scenario: Half-bridge high-side switch in 24–48 V BLDC motor gate driver IC auxiliary power stages. IC Role / Device Role / Timing Role: Compact, low-loss supply rail switch delivering clean 12 V bias to gate driver ICs under pulsed load conditions. Use Value: 29 nC Qg and 1.3 Ω gate resistance ensure fast, low-jitter turn-on compatible with integrated driver timing margins. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF6626TR1PBF | Higher RDS(on) (4.2 mΩ @ 10 V), same package and Qg; rated for 30 V instead of 40 V. | Limited to ≤24 V bus systems; unsuitable where 30–40 V transients occur (e.g., automotive 24 V or industrial 36 V inputs). | Select only if system VDS stress remains below 30 V and cost sensitivity outweighs efficiency gain from lower RDS(on). |
| SiR626DP-T1-GE3 | 40 V, 3.8 mΩ @ 10 V, 31 nC Qg, PowerPAK® SO-8 - higher RθJA (45°C/W) and no dual-sided cooling. | Requires larger PCB copper area or heatsink for equivalent thermal performance; less suitable for ultra-thin or high-power-density layouts. | Prefer when legacy SO-8 footprint compatibility is mandatory and thermal budget permits higher junction temperature rise. |
Compared with IRF6626TR1PBF and SiR626DP-T1-GE3, the IRF6616TR1PBF offers superior thermal performance (1.4°C/W vs. ≥2.5°C/W), lower switching loss (29 nC vs. ≥31 nC), and true dual-sided cooling - making it optimal for high-frequency, high-power-density synchronous rectification where board space and thermal headroom are constrained.
Availability
IRF6616TR1PBF is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and USB-C PD fast chargers requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.
Supply support for IRF6616TR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.
The IRF6616TR1PBF belongs to Infineon's DirectFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency power conversion in space-constrained applications such as CPU VRMs and telecom PSUs.
FAQ
What is the maximum continuous drain current at 70°C ambient temperature?
The IRF6616TR1PBF supports 19 A continuous drain current at TA = 25°C and 15 A at TA = 70°C when mounted on a 1 in² copper board per datasheet conditions. Derating follows linear 1.8 W/°C beyond 70°C ambient, limited by package thermal resistance and PCB layout.
Is the IRF6616TR1PBF RoHS compliant and lead-free?
Yes - IRF6616TR1PBF is RoHS compliant and lead-free, with "PbF" suffix indicating lead-free plating and halogen-free construction. It meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) and is qualified for standard vapor-phase, infrared, and convection reflow per AN-1035.
Can this MOSFET be used in avalanche-rated applications?
Yes - the IRF6616TR1PBF is rated for unclamped inductive switching with EAS = 150 mJ at IAS = 15 A and TJ = 25°C. Avalanche energy decreases with rising junction temperature; Fig. 14 shows EAS = 40 mJ at ID = 3.7 A and starting TJ = 150°C.
What is the recommended gate resistor value for 500 kHz switching?
A 5–10 Ω gate resistor is recommended for 500 kHz operation to balance switching speed and gate oscillation damping. With Qg = 29 nC and typical driver output impedance ~1 Ω, this yields ~15–30 ns rise/fall times - aligning with tr = 19 ns and tf = 4.4 ns measured values at 10 V drive.
IRF6616TR1PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- DirectFET™ Isometric MX
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 19A (Ta), 106A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5mOhm @ 19A, 10V
- Vgs(th) (Max) @ Id:
- 2.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 44 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3765 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.8W (Ta), 89W (Tc)
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DIRECTFET™ MX
IRF6616TR1PBF FAQ
1.How can I place an order for IRF6616TR1PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF6616TR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF6616TR1PBF reliable?
The price and inventory of IRF6616TR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6616TR1PBF is usually 5 days.
3.What payment methods are accepted for IRF6616TR1PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6616TR1PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF6616TR1PBF?
IRF6616TR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF6616TR1PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF6616TR1PBF?
For technical support, including IRF6616TR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6616TR1PBF requirements.
6.How does Aetrix verify that IRF6616TR1PBF is sourced from the original manufacturer or authorized distributors?
All IRF6616TR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6616TR1PBF meets industry standards.
7.What is the process for return or replacement of IRF6616TR1PBF?
All IRF6616TR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6616TR1PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF6616TR1PBF part is unused and in its original packaging.
Return procedure for IRF6616TR1PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF6616TR1PBF Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…
