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Infineon Technologies IRF6617TR1PBF
- Part No.:
- IRF6617TR1PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- DirectFET™ Isometric ST
- Datasheet:
-
IRF6617TR1PBF.pdf
- Description:
- MOSFET N-CH 30V 14A DIRECTFET
- Quantity:
- Payment:
- Shipping:
Inventory:2,318
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Product details
Overview
IRF6617TR1PBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode power MOSFET in DirectFET® ST package, optimized for high-frequency synchronous buck converters in CPU core DC-DC applications. It delivers 8.1 mΩ RDS(on) at VGS = 10 V, 10.3 mΩ at 4.5 V, 11 nC total gate charge, and ultra-low 0.7 mm profile with dual-sided cooling capability.
For engineers reviewing the IRF6617TR1PBF datasheet, IRF6617TR1PBF pinout, IRF6617TR1PBF application, or IRF6617TR1PBF equivalent, key selection criteria include RDS(on) vs. VGS trade-off, gate charge minimization for high-frequency switching, thermal resistance under double-sided PCB mounting, and compatibility with Micro8™ footprint layouts per AN-1035.
Technical Context
This MOSFET employs HEXFET® silicon with DirectFET® ST packaging to achieve simultaneous low conduction loss (RDS(on) = 6.2 mΩ typ. @ 10 V) and low switching loss (Qgd = 4.0 nC, Qsw = 5.0 nC). Its gate threshold voltage (1.35–2.35 V) and negative temperature coefficient (∆VGS(th)/∆TJ = −5.4 mV/°C) support stable operation across −40°C to +150°C junction range.
The device integrates a robust body diode with 16 ns typical reverse recovery time and 7.2 nC Qrr, enabling efficient unclamped inductive switching. Thermal design leverages RθJC = 3.0°C/W and RθJ-PCB = 1.0°C/W when mounted with metalized backside and clip heatsink per layout guidelines in AN-1035.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage for 12 V input rail systems with margin |
| RDS(on) max @ 10 V | 8.1 mΩ - Enables ≤1.5 W conduction loss at 15 A continuous drain current |
| RDS(on) max @ 4.5 V | 10.3 mΩ - Supports logic-level gate drive in low-voltage control FET configurations |
| Qg typ. | 11 nC - Reduces gate driver power requirement and enables >1 MHz switching in VRMs |
| Qgd typ. | 4.0 nC - Limits Miller-induced shoot-through risk during hard-switching transitions |
| RθJ-PCB | 1.0°C/W - Achieved with double-sided cooling on metal-core PCB, improving thermal headroom by 80% vs. prior packages |
| ID @ TC = 25°C | 55 A - Continuous current rating under case-mounted heatsink conditions |
Pinout & Package
IRF6617TR1PBF uses the DirectFET® ST (Small Size Can, T-Designation) package - a surface-mount, leadless, copper-can structure with top-side drain, bottom-side source, and edge-mounted gate terminals. Dimensions: 4.80 × 3.83 × 0.75 mm (L × W × H), compatible with Micro8™ land pattern.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Top Metal Pad | Drain (D) | Primary heat path and high-current output node; electrically connected to PCB copper pour for thermal and electrical conduction |
| Bottom Copper Substrate | Source (S) | Low-inductance return path; soldered directly to PCB ground plane for minimal loop inductance |
| Edge Terminal (Side) | Gate (G) | Control input with <1.5 nH parasitic inductance; routed away from power loops to prevent oscillation |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low profile (0.7 mm height) | Enables thin VRM designs in space-constrained laptop and server CPU power stages |
| Dual-sided cooling architecture | Reduces effective thermal resistance by 80% versus SO-8, supporting >60 A/cm² power density |
| Low gate-drain charge (Qgd = 4.0 nC) | Minimizes Miller plateau duration, improving controllability in high-dV/dt synchronous rectification |
| High Cdv/dt immunity | Withstands >50 V/ns transient stress without false turn-on, critical for fast-switching buck converters |
| RoHS-compliant, lead-free reflow qualified | Rated for 260°C peak reflow profile, ensuring compatibility with standard SMT assembly lines |
Applications
| Server CPU Core VRM | Laptop Processor Power Stage |
|---|---|
|
Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.3 V at up to 120 A to Intel/AMD server CPUs. IC Role / Device Role / Timing Role: Control FET in synchronous rectification stage, switching at 300–600 kHz with precise dead-time control. Use Value: 8.1 mΩ RDS(on) and 11 nC Qg reduce combined conduction + switching losses by ≥18% versus SO-8 alternatives at 500 kHz. |
Use Scenario: Compact, single-phase or dual-phase VRM powering mobile APUs in ultrabooks with strict height limits (<1.0 mm). IC Role / Device Role / Timing Role: High-side switch in integrated power stage, driven by integrated PWM controller with 4.5 V logic-level gate drive. Use Value: 0.7 mm profile and 10.3 mΩ RDS(on) @ 4.5 V enable full regulation within 0.9 mm board stack-up while maintaining >92% efficiency at 25 A. |
| GPU Voltage Regulator | AI Accelerator Core Supply |
|
Use Scenario: Multi-phase VRM delivering dynamic 0.6–0.9 V at up to 300 A to discrete GPUs under burst load conditions. IC Role / Device Role / Timing Role: Low-side synchronous FET handling high RMS current and reverse recovery stress during phase interleaving. Use Value: Body diode trr = 16 ns and Qrr = 7.2 nC minimize reverse recovery loss and EMI generation during high-di/dt transitions. |
Use Scenario: High-density, high-efficiency power delivery to ASIC-based AI accelerators requiring sub-1 V rails with fast transient response. IC Role / Device Role / Timing Role: Primary switching element in digitally controlled multiphase buck with >1 MHz frequency and adaptive dead-time tuning. Use Value: Ultra-low package inductance (<0.5 nH) and 1.0°C/W RθJ-PCB ensure stable operation under 500 A/µs load transients without thermal throttling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF6622TRPBF | RDS(on) = 4.8 mΩ @ 10 V, Qg = 17 nC, same DirectFET ST package | Better conduction loss but higher switching loss; requires stronger gate driver | Preferred where conduction loss dominates (e.g., low-frequency, high-current phases); less suitable for >500 kHz operation |
| SiR626DP-T1-GE3 | RDS(on) = 7.0 mΩ @ 10 V, Qg = 12.5 nC, PowerPAK® 1212-8 package (1.2 mm height) | Higher profile, no dual-sided cooling; 20% larger footprint than DirectFET ST | Used where legacy layout reuse is required; not recommended for ultra-thin or thermally constrained designs |
Compared with IRF6622TRPBF and SiR626DP-T1-GE3, the IRF6617TR1PBF offers optimal balance of RDS(on), Qg, and thermal performance in minimal height - making it uniquely suited for next-gen CPU/GPU VRMs where both efficiency and vertical space are limiting factors.
Availability
IRF6617TR1PBF is available at Aetrix Electronics and suitable for server CPU core VRMs, laptop processor power stages, and GPU voltage regulators requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production lots.
Supply support for IRF6617TR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.
The IRF6617TR1PBF belongs to Infineon's DirectFET® power MOSFET product line, engineered specifically for high-efficiency, high-density DC-DC conversion in computing and AI infrastructure applications where thermal and space constraints dominate design decisions.
FAQ
What is the maximum allowable junction temperature for continuous operation?
The IRF6617TR1PBF has a specified operating junction temperature range of −40°C to +150°C. For reliable continuous operation, junction temperature must remain ≤150°C under worst-case thermal conditions - verified using RθJ-PCB = 1.0°C/W with double-sided cooling and proper PCB copper area per AN-1035 layout guidelines.
Is IRF6617TR1PBF pin-compatible with other DirectFET ST devices?
Yes - all DirectFET ST-outline devices (e.g., IRF6615, IRF6622) share identical mechanical footprint, terminal locations, and solder pad geometry. This enables direct layout reuse across the family, provided thermal and electrical derating align with each part's RDS(on) and Qg specifications.
Does this MOSFET require special soldering profiles due to its DirectFET construction?
No - IRF6617TR1PBF is qualified for standard lead-free reflow up to 260°C peak temperature. However, AN-1035 mandates specific stencil design (0.12 mm thickness, 0.35 mm aperture) and substrate plating (ENIG or immersion silver) to ensure void-free solder joints and optimal thermal transfer through the bottom source pad.
Can IRF6617TR1PBF be used in avalanche-rated applications?
It supports single-pulse avalanche energy up to 120 mJ (at IAS = 12 A, starting TJ = 25°C), but is not characterized or guaranteed for repetitive avalanche operation. Designers must limit operation to clamped inductive switching with external snubbers or synchronous rectification to avoid cumulative junction degradation.
IRF6617TR1PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- DirectFET™ Isometric ST
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 14A (Ta), 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8.1mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.35V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 17 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1300 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.1W (Ta), 42W (Tc)
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DIRECTFET™ ST
IRF6617TR1PBF FAQ
1.How can I place an order for IRF6617TR1PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF6617TR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF6617TR1PBF reliable?
The price and inventory of IRF6617TR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6617TR1PBF is usually 5 days.
3.What payment methods are accepted for IRF6617TR1PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6617TR1PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF6617TR1PBF?
IRF6617TR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF6617TR1PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF6617TR1PBF?
For technical support, including IRF6617TR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6617TR1PBF requirements.
6.How does Aetrix verify that IRF6617TR1PBF is sourced from the original manufacturer or authorized distributors?
All IRF6617TR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6617TR1PBF meets industry standards.
7.What is the process for return or replacement of IRF6617TR1PBF?
All IRF6617TR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6617TR1PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF6617TR1PBF part is unused and in its original packaging.
Return procedure for IRF6617TR1PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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