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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6617TRPBF

Name: IRF6617TRPBF
Brand: Infineon Technologies
SKU: IRF6617TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6617TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric ST

Datasheet:: IRF6617TRPBF.pdf

Description:: MOSFET N-CH 30V 14A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6617TRPBF from Infineon Technologies (formerly International Rectifier) is a 30V N-channel power MOSFET in DirectFET® ST package, optimized for synchronous buck converters in CPU core DC-DC applications. It delivers R_DS(on) = 8.1 mΩ @ V_GS = 10 V, Q_g = 11 nC (typ.), and ultra-low 0.7 mm profile with dual-sided cooling capability.

For engineers reviewing the IRF6617TRPBF datasheet, IRF6617TRPBF pinout, IRF6617TRPBF application, or IRF6617TRPBF equivalent, key selection criteria include low gate charge for high-frequency switching, sub-1 mm height for space-constrained VRMs, and validated thermal performance under double-sided PCB cooling.

Technical Context

This MOSFET employs trench-gate HEXFET® silicon and DirectFET® ST packaging to minimize conduction and switching losses simultaneously. Its R_DS(on)–Q_g trade-off is specifically tuned for control-FET operation in 30V-input, high-current synchronous buck stages powering modern CPUs.

The device features low C_iss (1300 pF), C_oss (430 pF), and Cr_ss (160 pF), enabling fast switching with reduced EMI and dv/dt-induced shoot-through risk. Body diode t_rr = 16–24 ns and Q_rr = 7.2–11 nC support efficient synchronous rectification.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Rated for 5–12 V input rails with margin against transient overshoot in server/desktop VRMs.
R_DS(on) max	8.1 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 15 A, critical for >90% efficiency at 100+ A loads.
Q_g typ.	11 nC - Reduces gate drive power and allows use of low-power drivers in multi-phase controllers.
Package Height	0.7 mm - Fits under low-profile heatsinks and enables stacked PCB layouts in thin computing modules.
R_θJC	3.0 °C/W - Confirmed thermal path from junction to case via copper substrate, enabling direct thermal interface on both sides.
t_rr	16–24 ns - Limits reverse recovery energy loss during dead-time, improving light-load efficiency.
I_D @ T_C = 25°C	55 A - Supports high peak current demands in transient load steps without thermal derating.

Pinout & Package

IRF6617TRPBF uses the DirectFET® ST (Small Size Can, T-Designation) package: 4.8 × 3.8 × 0.7 mm footprint, metal-can construction with top-side drain, bottom-side source, and edge-mounted gate terminal. Dual-sided thermal interface enabled by exposed copper top (Drain) and bottom (Source) pads.

Pin/Terminal	Circuit Role	Design Meaning
Top Metal Pad	Drain (D)	Primary high-current output node; serves as thermal interface to heatsink or top-side copper pour.
Bottom Metal Pad	Source (S)	Low-impedance return path and thermal interface to PCB ground plane; electrically tied to source pin.
Edge Terminal	Gate (G)	Control input with low inductance; positioned for short trace routing to driver IC to minimize ringing.

Key Features

Feature	Design Value
DirectFET® ST Packaging	0.7 mm profile with dual-sided cooling - reduces thermal resistance by 80% vs. SO-8, enabling higher power density in VRMs.
Optimized R_DS(on)/Q_g Ratio	8.1 mΩ / 11 nC - balances low conduction loss and fast switching for 300–1000 kHz CPU core converters.
Low Cr_ss	160 pF - minimizes Miller effect, improving gate drive stability and reducing required driver current.
High C_dv/dt Immunity	Tested per JEDEC JESD22-A114 - withstands rapid voltage transients common in multiphase buck converter nodes.
RoHS Compliant & Lead-Free	Qualified for 260°C reflow - compatible with standard SMT assembly processes without special handling.

Applications

Server CPU VRM

Laptop Core Regulator

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.3 V to x86 or ARM-based server processors under dynamic load.

IC Role / Device Role / Timing Role: Control FET in high-side position, switching at 300–600 kHz with precise duty-cycle control.

Use Value: 8.1 mΩ R_DS(on) and 11 nC Q_g reduce total losses by ≥15% vs. legacy SO-8 MOSFETs, directly improving system efficiency and thermal headroom.

Use Scenario: Thin-profile, single- or dual-phase VRM powering mobile CPU cores in ultrabooks and 2-in-1 devices.

IC Role / Device Role / Timing Role: High-side switch operating at 800–1000 kHz with tight layout constraints.

Use Value: 0.7 mm height enables integration beneath compact heatsinks; dual-sided cooling maintains T_J < 105°C at 30 A continuous.

AI Accelerator Power Stage

Gaming GPU Core Supply

Use Scenario: High-transient, high-efficiency power delivery for AI inference accelerators requiring rapid current slew rates.

IC Role / Device Role / Timing Role: Control FET handling >100 A peak current with <1 µs load-step response.

Use Value: Low Q_gd (4.0 nC) and fast t_f (3.7 ns) minimize switching delay mismatch across phases, improving transient accuracy.

Use Scenario: Multi-phase VRM delivering up to 400 W to discrete GPU cores under sustained gaming workloads.

IC Role / Device Role / Timing Role: High-side switch in 6–8 phase topology, operating at 500 kHz with interleaved timing.

Use Value: R_θJC = 3.0 °C/W and dual-sided cooling allow >40% higher power density than SO-8 equivalents without forced airflow.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency synchronous buck control-FET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6627TRPBF	R_DS(on) = 5.2 mΩ @ 10 V, Q_g = 17 nC, same ST package	Lower R_DS(on) but higher gate charge increases driver loss and slows switching	Preferred when conduction loss dominates (e.g., low-frequency, high-current designs); less suitable for >800 kHz operation.
SiR626DP-T1-GE3	R_DS(on) = 7.0 mΩ @ 10 V, Q_g = 13.5 nC, PowerPAK® SO-8 package (1.6 mm height)	Higher profile limits dual-sided cooling; 2× thermal resistance vs. DirectFET ST	Acceptable where board height >1.0 mm is available and existing SO-8 layout reuse is prioritized over thermal optimization.

Compared with IRF6627TRPBF and SiR626DP-T1-GE3, the IRF6617TRPBF uniquely balances low Q_g, ultra-thin profile, and validated dual-sided cooling-making it the optimal choice for space- and thermally constrained high-frequency CPU/GPU VRMs where switching loss and board thickness are primary constraints.

Availability

IRF6617TRPBF is available at Aetrix Electronics and suitable for server CPU VRMs, laptop core regulators, and AI accelerator power stages requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production lots.

Supply support for IRF6617TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues its legacy in high-performance power semiconductors, with global manufacturing, qualification, and technical support infrastructure.

The IRF6617TRPBF belongs to the DirectFET® ST series of power MOSFETs, engineered specifically for high-efficiency, high-density DC-DC conversion in computing and communications infrastructure where thermal and spatial constraints dominate design.

FAQ

What is the maximum recommended gate drive voltage for IRF6617TRPBF?

The absolute maximum V_GS rating is ±20 V, but the device is characterized and optimized for 10 V gate drive in synchronous buck applications. Driving above 12 V yields diminishing R_DS(on) improvement while increasing gate oxide stress and driver power dissipation. For 4.5 V logic-level drive, R_DS(on) rises to 10.3 mΩ - acceptable only in low-duty-cycle or low-current phases.

Can IRF6617TRPBF be used in parallel configurations?

Yes - its positive R_DS(on) temperature coefficient (25 mV/°C) ensures inherent current sharing across paralleled units. Layout symmetry, matched gate trace lengths, and individual gate resistors (≥1 Ω) are required to suppress oscillation. Thermal coupling via shared heatsink or copper plane further improves balance under transient loads.

Is IRF6617TRPBF suitable for hard-switched PFC stages?

No - it is not rated or characterized for continuous 600 V operation or avalanche energy handling required in boost PFC. Its 30 V V_DS rating and 120 mJ E_AS are designed for low-voltage, high-frequency buck topologies only. Using it in PFC violates absolute maximum ratings and risks catastrophic failure.

How does the DirectFET ST package affect PCB layout versus SO-8?

DirectFET ST requires a custom land pattern with isolated top-side drain pad (connected to output net) and bottom-side source pad (connected to ground/power plane). Unlike SO-8, no through-hole vias are needed for thermal relief - instead, thermal pads must be fully exposed and soldered to matching copper areas on both board sides. Stencil aperture design follows AN-1035 guidelines to ensure void-free solder joints.

IRF6617TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric ST

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Ta), 55A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.1mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1300 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.1W (Ta), 42W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ ST

IRF6617TRPBF FAQ

1.How can I place an order for IRF6617TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6617TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6617TRPBF reliable?

The price and inventory of IRF6617TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6617TRPBF is usually 5 days.

3.What payment methods are accepted for IRF6617TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6617TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6617TRPBF?

IRF6617TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6617TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6617TRPBF?

For technical support, including IRF6617TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6617TRPBF requirements.

6.How does Aetrix verify that IRF6617TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF6617TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6617TRPBF meets industry standards.

7.What is the process for return or replacement of IRF6617TRPBF?

All IRF6617TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6617TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6617TRPBF part is unused and in its original packaging.

Return procedure for IRF6617TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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