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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6618TR1

Name: IRF6618TR1
Brand: Infineon Technologies
SKU: IRF6618TR1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6618TR1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MT

Datasheet:: IRF6618TR1.pdf

Description:: MOSFET N-CH 30V 30A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Inventory:7,608

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Product details

Overview

IRF6618TR1 from Infineon Technologies (formerly International Rectifier) is a 30 V, 2.2 mΩ (at V_GS = 10 V) N-channel Power MOSFET in DirectFET^TM MT package, optimized for high-frequency synchronous buck converters in CPU core DC-DC applications. It delivers ultra-low R_DS(on), 43 nC total gate charge, and 1.4 °C/W junction-to-case thermal resistance, enabling dual-sided cooling and <0.7 mm profile for space-constrained power stages.

For engineers reviewing the IRF6618TR1 datasheet, IRF6618TR1 pinout, IRF6618TR1 application, or IRF6618TR1 equivalent, key selection criteria include C_dv/dt immunity for robust synchronous FET operation, low package inductance for reduced switching loss, and compatibility with vapor-phase and convection reflow per AN-1035.

Technical Context

The IRF6618TR1 employs advanced HEXFET silicon in a copper-can DirectFET MT package with top-side source and bottom-side drain terminals - enabling simultaneous PCB-side and heatsink-side thermal extraction. Its gate threshold voltage (1.35–2.35 V) and steep transconductance (100 S typical) support precise PWM control in high-dV/dt environments.

Designed specifically for high-efficiency, high-density CPU VRMs, it balances low R_DS(on) and low Q_g/Q_gd (15 nC gate-drain charge), minimizing both conduction loss and Miller-induced turn-on risk during fast transient load steps.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Supports input rails up to 24 V in synchronous buck topologies with margin for voltage spikes.
R_DS(on) max	2.2 mΩ @ V_GS = 10 V - Enables ≤1.5 W conduction loss at 30 A, critical for >90% efficiency at high current.
Q_g	43 nC - Low gate drive energy reduces driver IC power dissipation and enables >1 MHz switching without excessive losses.
C_iss	5640 pF - Optimized input capacitance supports stable gate drive loop response with standard 1–2 Ω gate resistors.
R_θJC	1.4 °C/W - Enables direct heatsink mounting on drain side, reducing junction temperature rise by ~80% vs. SO-8 equivalents.
C_dv/dt immunity	Rated for high dV/dt stress - Confirmed via test conditions (V_DS = 24 V, V_GS = 0 V, T_J = 150 °C) to prevent false turn-on in synchronous rectification.

Pinout & Package

IRF6618TR1 uses the DirectFET^TM MT (Medium Size Can, T-Designation) package: copper-can construction with exposed top-side source (S) and bottom-side drain (D) terminals; gate (G) is a peripheral solderable pad. No traditional leads - terminals are soldered directly to PCB pads per AN-1035 layout guidelines.

Pin/Terminal	Circuit Role	Design Meaning
Top Metal Surface	Source (S)	Primary current return path; thermally coupled to PCB copper for enhanced conduction cooling.
Bottom Metal Surface	Drain (D)	Main power output node; designed for direct attachment to heatsink or thermal pad for dual-sided cooling.
Peripheral Pad (G)	Gate (G)	Low-inductance control terminal; requires short, low-impedance trace to minimize ringing and EMI.

Key Features

Feature	Design Value
Ultra-low profile (0.7 mm)	Enables stacking of multiple power stages in thin VRM modules without height interference.
Dual-sided cooling interface	Simultaneous thermal extraction from PCB (source) and heatsink (drain) lowers peak T_J by up to 40 °C vs. SO-8.
Optimized for synchronous buck FETs	High C_dv/dt immunity and low Q_gd/Q_g ratio suppress shoot-through risk during dead-time transitions.
DirectFET MT footprint compatibility	Reuses existing SO-8 PCB layouts - no redesign needed when upgrading from legacy packages.

Applications

Server CPU Core VRM

Laptop Voltage Regulator Module

Use Scenario: High-current, multi-phase buck converter supplying modern x86 processors with dynamic current demands up to 200 A.

IC Role / Device Role / Timing Role: Synchronous high-side or low-side switch operating at 300–1000 kHz with tight dead-time control.

Use Value: 2.2 mΩ R_DS(on) and 1.4 °C/W R_θJC reduce power loss and thermal derating, enabling smaller inductors and fewer phases.

Use Scenario: Compact, fanless laptop VRM requiring minimal board area and low acoustic noise.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in 2–4 phase buck stage, driven by integrated controller.

Use Value: 0.7 mm profile allows placement under heat spreaders; dual-sided cooling eliminates need for external heatsinks.

GPU Power Delivery

AI Accelerator Board Power Stage

Use Scenario: Multi-rail GPU power system delivering >500 W with rapid load transients and strict ripple limits.

IC Role / Device Role / Timing Role: High-current low-side FET in interleaved buck topology with phase-shifting control.

Use Value: 43 nC Q_g and low C_oss (1260 pF) enable clean switching edges and reduced EMI filtering burden.

Use Scenario: Dense AI training card with stacked memory and compute dies demanding localized, high-efficiency power conversion.

IC Role / Device Role / Timing Role: Point-of-load (POL) switch in distributed VRM architecture with sub-10 mm² footprint constraints.

Use Value: DirectFET MT pad layout allows dense array placement; 80% lower R_θJA vs. SO-8 improves thermal headroom in confined airflow zones.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-efficiency synchronous buck FET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6622TR1PBF	R_DS(on) = 1.5 mΩ @ 10 V, Q_g = 52 nC, same DirectFET MT package	Higher conduction efficiency but increased gate drive loss at >500 kHz; requires stronger gate driver	Select when lowest R_DS(on) dominates over switching frequency; verify driver capability for 52 nC load
SiR626DP-T1-GE3	R_DS(on) = 2.3 mΩ @ 10 V, Q_g = 37 nC, PowerPAK^® SO-8 package, R_θJC = 2.0 °C/W	Lower gate charge improves high-frequency efficiency but higher thermal resistance limits power density	Prefer when leveraging existing SO-8 footprints and gate drivers; avoid in dual-cooled or ultra-thin designs

Compared with IRF6618TR1, IRF6622TR1PBF trades higher gate charge for lower conduction loss, while SiR626DP-T1-GE3 sacrifices thermal performance for broader design reuse - making IRF6618TR1 optimal where dual-sided cooling and balanced Q_g/R_DS(on) are critical.

Availability

IRF6618TR1 is available at Aetrix Electronics and suitable for server CPU VRMs, laptop voltage regulator modules, and GPU power delivery systems requiring stable component supply and long-term industrial availability.

Supply support for IRF6618TR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon and packaging innovation for high-efficiency power conversion.

The IRF6618TR1 belongs to Infineon's DirectFET Power MOSFET product line, engineered specifically for high-density, high-frequency DC-DC converters in computing and AI infrastructure where thermal and electrical performance are co-constrained.

FAQ

Is IRF6618TR1 pin-compatible with SO-8 MOSFETs?

No - IRF6618TR1 uses a DirectFET MT copper-can package with top-source/bottom-drain terminals, not leaded pins. Its PCB footprint matches SO-8 layout area but requires dedicated thermal pad design and soldering per AN-1035. Mechanical mounting and thermal interface differ fundamentally.

What is the maximum continuous drain current at 70°C ambient?

Per datasheet absolute ratings, continuous drain current is 15 A at T_A = 70°C with proper PCB copper area (≥1 in² 2 oz Cu). This assumes 2-layer board with internal ground plane; actual current depends on thermal design - junction temperature must stay ≤150°C.

Does IRF6618TR1 require special gate drive voltage sequencing?

No sequencing is required, but gate drive must stay within ±20 V absolute maximum. For reliable operation in synchronous buck, V_GS should be ≥4.5 V (ensuring R_DS(on) ≤3.4 mΩ) and use of negative turn-off bias (–2 V to –5 V) is recommended to improve C_dv/dt immunity during high dV/dt transitions.

Can IRF6618TR1 be used in avalanche-rated circuits?

Yes - it is rated for 210 mJ single-pulse avalanche energy (E_AS) at T_J = 25°C. However, avalanche operation is not intended for repetitive stress; the device is optimized for clamped inductive switching in synchronous buck topologies, not unclamped inductive loads.

IRF6618TR1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MT

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Ta), 170A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.2mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 65 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5640 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 89W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MT

IRF6618TR1 FAQ

1.How can I place an order for IRF6618TR1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6618TR1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6618TR1 reliable?

The price and inventory of IRF6618TR1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6618TR1 is usually 5 days.

3.What payment methods are accepted for IRF6618TR1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6618TR1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6618TR1?

IRF6618TR1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6618TR1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6618TR1?

For technical support, including IRF6618TR1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6618TR1 requirements.

6.How does Aetrix verify that IRF6618TR1 is sourced from the original manufacturer or authorized distributors?

All IRF6618TR1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6618TR1 meets industry standards.

7.What is the process for return or replacement of IRF6618TR1?

All IRF6618TR1 units undergo pre-shipment inspection (PSI). If there is an issue with IRF6618TR1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6618TR1 part is unused and in its original packaging.

Return procedure for IRF6618TR1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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