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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6618TR1PBF

Name: IRF6618TR1PBF
Brand: Infineon Technologies
SKU: IRF6618TR1PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6618TR1PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MT

Datasheet:: IRF6618TR1PBF.pdf

Description:: MOSFET N-CH 30V 30A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6618TR1PBF from Infineon Technologies (formerly International Rectifier) is a 30V N-channel DirectFET™ power MOSFET optimized for synchronous buck converter high-side and low-side (SyncFET) operation in CPU core DC-DC converters. It delivers 2.2 mΩ R_DS(on) at V_GS = 10 V, 43 nC total gate charge, and 1.4 °C/W junction-to-case thermal resistance in an ultra-low-profile MT package (<0.7 mm). Its dual-sided cooling capability supports high-current microprocessor power delivery.

For engineers reviewing the IRF6618TR1PBF datasheet, IRF6618TR1PBF pinout, IRF6618TR1PBF application, or IRF6618TR1PBF equivalent, key selection criteria include conduction loss (R_DS(on) @ 4.5 V = 3.4 mΩ), switching efficiency (Q_gd = 15 nC), thermal performance under double-sided cooling, and compatibility with SO-8 footprint layouts.

Technical Context

This MOSFET employs HEXFET® silicon in a copper-can DirectFET™ MT package with top-side drain and bottom-side source/gate terminals - enabling simultaneous PCB-side and heatsink-side thermal extraction. Its gate threshold voltage (1.64 V typ.) and low Q_gs2/Q_gd ratio support fast, controlled turn-on in high-frequency (>500 kHz) synchronous rectification.

The device is characterized for clamped inductive switching with 24 A I_AS, 210 mJ E_AS, and 43 ns t_rr body diode recovery. Its C_iss = 5640 pF and C_rss = 570 pF values are specified at V_DS = 15 V, supporting stable gate drive design in high-dv/dt environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V maximum - defines safe operating voltage ceiling in 12 V input bus and 3-phase VRM applications
R_DS(on)	2.2 mΩ @ V_GS = 10 V - enables <1 W conduction loss at 30 A output current in SyncFET position
Q_g	43 nC total - determines gate driver power requirement and switching transition time in 500–1000 kHz converters
R_θJC	1.4 °C/W - quantifies thermal path efficiency from junction to case, critical for double-sided cooling implementation
t_r/t_f	71 ns / 8.1 ns - defines minimum controllable pulse width and EMI generation profile during hard switching
V_GS(th)	1.64 V typical - ensures reliable enhancement-mode turn-on with standard 3.3 V or 5 V gate drivers
Q_rr	46 nC - sets reverse recovery loss budget when used as low-side FET with body diode commutation

Pinout & Package

IRF6618TR1PBF uses the DirectFET™ MT (Medium Size Can, T-Designation) package: copper can with top-side drain (D), bottom-side source (S) and gate (G) terminals; 6.35 × 5.05 mm footprint; 0.676 mm max height; RoHS-compliant lead-free finish.

Pin/Terminal	Circuit Role	Design Meaning
Top metal surface	Drain (D)	Primary high-current path; thermally coupled to heatsink or VRM top-side thermal pad
Bottom left pad	Source (S)	Power return node; electrically and thermally connected to PCB ground plane
Bottom right pad	Gate (G)	Control input; requires low-inductance routing to minimize ringing and overshoot

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g figure of merit	94.6 mΩ·nC - minimizes combined conduction and switching losses in high-frequency VRMs
Dual-sided cooling interface	1.4 °C/W R_θJC + 1.0 °C/W R_θJ-PCB - enables >80% thermal resistance reduction vs. SO-8 packages
SO-8 footprint compatibility	6.35 × 5.05 mm outline - allows drop-in layout reuse without redesigning power stage PCBs
High dv/dt immunity	C_rss/C_iss = 0.10 - suppresses false turn-on during high-slew-rate switching transitions
Optimized for SyncFET sockets	Q_gd/Q_g = 35% - balances speed and shoot-through robustness in synchronous buck topologies

Applications

CPU Core VRM

GPU Power Delivery

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.3 V to modern x86 and ARM CPUs with dynamic current up to 300 A per rail.

IC Role / Device Role / Timing Role: Low-side SyncFET handling continuous 30–50 A RMS current with sub-100 ns switching transitions.

Use Value: 2.2 mΩ R_DS(on) reduces conduction loss by 35% vs. legacy SO-8 MOSFETs, directly improving system efficiency at 90+ A load points.

Use Scenario: Compact, high-density VRM on graphics card PCB delivering transient currents >200 A to GPU cores during gaming workloads.

IC Role / Device Role / Timing Role: High-side FET in interleaved 4-phase topology operating at 1 MHz with tight dead-time control.

Use Value: 43 nC Q_g and 15 nC Q_gd enable precise gate timing and reduced switching loss, critical for maintaining <10 mV output ripple under 50 A/µs transients.

Server Memory Regulator

AI Accelerator Power Stage

Use Scenario: Point-of-load regulator for DDR5 memory modules requiring fast transient response and <5 mV regulation error.

IC Role / Device Role / Timing Role: Bottom-side FET in 3-phase buck with integrated controller, operating at 800 kHz with 4.5 V gate drive.

Use Value: 3.4 mΩ R_DS(on) @ 4.5 V ensures stable operation with standard 5 V logic-level drivers, eliminating need for level-shifted gate bias.

Use Scenario: Power delivery network for FPGA-based AI inference accelerators with burst-mode current demands exceeding 400 A.

IC Role / Device Role / Timing Role: Dual-cooled low-side switch in stacked-phase VRM architecture using both PCB copper and external heatsink.

Use Value: 1.4 °C/W R_θJC and 1.0 °C/W R_θJ-PCB allow sustained 60 A continuous current without derating, enabling smaller thermal solution volume.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6622TR1PBF	Higher R_DS(on) (3.0 mΩ @ 10 V), same Q_g (43 nC), identical MT package	Suitable for lower-current VRMs where thermal margin exceeds 15°C	Select when cost sensitivity outweighs 36% higher conduction loss at 30 A
SiR626DP-T1-GE3	Lower Q_g (34 nC), slightly higher R_DS(on) (2.5 mΩ @ 10 V), PowerPAK® SO-8 package	Limited to single-sided cooling; requires larger PCB area for equivalent thermal performance	Choose when existing SO-8 layout must be retained and peak current ≤25 A

Compared with IRF6618TR1PBF, IRF6622TR1PBF trades conduction efficiency for cost, while SiR626DP-T1-GE3 sacrifices thermal performance for layout compatibility - making the IRF6618TR1PBF optimal for space-constrained, high-efficiency, dual-cooled VRMs.

Availability

IRF6618TR1PBF is available at Aetrix Electronics and suitable for CPU core VRMs, GPU power delivery systems, server memory regulators, and AI accelerator power stages requiring stable component supply and consistent parametric performance across production lots.

Supply support for IRF6618TR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with headquarters in Munich, Germany.

The DirectFET™ product line was developed to eliminate packaging thermal bottlenecks in high-current DC-DC conversion, specifically targeting next-generation computing and data center power delivery where efficiency, density, and thermal headroom are critical.

FAQ

What is the maximum continuous drain current for IRF6618TR1PBF at 70°C case temperature?

The maximum continuous drain current at T_C = 70°C is 170 A, as specified in the Absolute Maximum Ratings table under "ID @ TC = 25°C" with linear derating applied. This rating assumes proper double-sided cooling and PCB copper area per AN-1035 layout guidelines.

Does IRF6618TR1PBF require a negative gate voltage to ensure full turn-off?

No. With a gate threshold voltage of 1.64 V (typical) and guaranteed turn-off at V_GS = 0 V, IRF6618TR1PBF operates reliably as an enhancement-mode device using 0 V / 5 V or 0 V / 10 V gate drive. Negative gate bias is not required or recommended.

Can IRF6618TR1PBF be used in parallel configurations?

Yes - its positive R_DS(on) temperature coefficient (23 mV/°C breakdown voltage drift) and matched threshold voltage distribution support stable current sharing. Parallel operation requires symmetrical PCB layout, matched gate drive impedance, and shared thermal interface to maintain <5°C inter-device ΔT.

Is the IRF6618TR1PBF RoHS-compliant and halogen-free?

Yes. The device is RoHS-compliant and lead-free qualified for 260°C reflow per J-STD-020. Material content documentation confirms compliance with EU Directive 2011/65/EU and absence of brominated flame retardants (BFRs) and chlorine-based compounds.

IRF6618TR1PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MT

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Ta), 170A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.2mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 65 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5640 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 89W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MT

IRF6618TR1PBF FAQ

1.How can I place an order for IRF6618TR1PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6618TR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6618TR1PBF reliable?

The price and inventory of IRF6618TR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6618TR1PBF is usually 5 days.

3.What payment methods are accepted for IRF6618TR1PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6618TR1PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6618TR1PBF?

IRF6618TR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6618TR1PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6618TR1PBF?

For technical support, including IRF6618TR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6618TR1PBF requirements.

6.How does Aetrix verify that IRF6618TR1PBF is sourced from the original manufacturer or authorized distributors?

All IRF6618TR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6618TR1PBF meets industry standards.

7.What is the process for return or replacement of IRF6618TR1PBF?

All IRF6618TR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6618TR1PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6618TR1PBF part is unused and in its original packaging.

Return procedure for IRF6618TR1PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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