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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6618TRPBF

Name: IRF6618TRPBF
Brand: Infineon Technologies
SKU: IRF6618TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6618TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MT

Datasheet:: IRF6618TRPBF.pdf

Description:: MOSFET N-CH 30V 30A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6618TRPBF from Infineon Technologies (formerly International Rectifier) is a 30V N-channel DirectFET™ power MOSFET optimized for synchronous buck converter high-side and low-side (SyncFET) operation in CPU core DC-DC converters. It delivers 2.2 mΩ R_DS(on) at V_GS = 10 V, 43 nC total gate charge, and 1.64 V gate threshold voltage, enabling high-frequency switching with minimal conduction and switching losses in high-current microprocessor power delivery.

For engineers reviewing the IRF6618TRPBF datasheet, IRF6618TRPBF pinout, IRF6618TRPBF application, or IRF6618TRPBF equivalent, key selection criteria include ultra-low on-resistance at 4.5 V drive (3.4 mΩ), dual-sided cooling compatibility, <0.7 mm profile, and avalanche-rated ruggedness (210 mJ E_AS) for reliable operation under transient stress in server and client VRMs.

Technical Context

This MOSFET employs HEXFET® silicon in a copper-can DirectFET MT package with top-side drain and bottom-side source/gate terminals. Its layout enables dual-sided thermal interface-drain connects to PCB top-side copper while source/gate land on bottom-reducing R_θJC to 1.4 °C/W and improving thermal transfer by 80% versus SO-8 equivalents.

The device is characterized for synchronous rectification in 300–1000 kHz buck converters, featuring low Q_gd/Q_gs2 ratio (15 nC / 4.0 nC), fast switching (t_r = 71 ns, t_f = 8.1 ns), and body diode with 43 ns reverse recovery time and 46 nC Q_rr, minimizing shoot-through risk and dead-time sensitivity.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 12 V input VRMs and 3-phase interleaved topologies.
R_DS(on)	2.2 mΩ @ 10 V - Enables ≤1.5 W conduction loss at 30 A continuous drain current in high-current CPU core rails.
Q_g	43 nC - Low gate charge supports efficient 500+ kHz PWM control with standard gate drivers (e.g., IR35201).
E_AS	210 mJ - Single-pulse avalanche energy rating ensures robustness against inductive switching transients in unclamped loads.
R_θJC	1.4 °C/W - Junction-to-case thermal resistance enables direct heatsink mounting on drain pad for high-power density designs.
Q_rr	46 nC - Body diode reverse recovery charge optimized to reduce cross-conduction losses during synchronous FET transitions.
V_GS(th)	1.64 V (typ) - Threshold voltage ensures strong turn-on at 4.5 V logic-level drive, supporting Intel VR13/VR14 compliant controllers.

Pinout & Package

IRF6618TRPBF uses the DirectFET MT (Medium Size Can, T-Designation) package: copper-can surface-mount outline with exposed top-side drain and bottom-side source/gate terminals. Dimensions: 6.35 × 5.05 × 0.7 mm (L × W × H). Compatible with standard SMT reflow (260°C peak).

Pin/Terminal	Circuit Role	Design Meaning
Top Metal Pad	Drain (D)	Primary high-current path; thermally and electrically connected to PCB top-layer copper pour for dual-sided cooling.
Bottom Left Pad	Source (S)	Low-side return node; forms low-inductance loop with gate driver ground and controller source sense.
Bottom Right Pad	Gate (G)	Control terminal; isolated pad layout minimizes gate loop inductance (<0.5 nH typical) for clean edge rates.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	3.4 mΩ - Ensures full enhancement in 5 V logic-driven SyncFET applications without gate boosting.
Dual-sided cooling interface	Top-side drain + bottom-side source/gate - Enables simultaneous thermal interface to top heatsink and bottom PCB plane, reducing system ΔT by >30%.
Low Q_gd/Q_gs2 ratio	15 nC / 4.0 nC - Improves Miller immunity and reduces required gate drive strength for stable high-dV/dt operation.
Optimized body diode	43 ns t_rr, 46 nC Q_rr - Minimizes reverse recovery losses and voltage spikes during hard commutation in synchronous rectification.
RoHS-compliant lead-free	Qualified to 260°C reflow - Supports lead-free manufacturing without derating or process modification.

Applications

Server CPU Core VRM

Client Notebook VR14 Converter

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.5 V @ up to 200 A to modern x86 CPUs.

IC Role / Device Role: Low-side SyncFET in 3–6 phase interleaved topology, operating at 500–1000 kHz.

Use Value: 2.2 mΩ R_DS(on) and 43 nC Q_g reduce combined conduction + switching loss by ≥18% vs. SO-8 alternatives, enabling higher efficiency at 90+ A load points.

Use Scenario: Compact 2–3 phase VR14-compliant converter in ultrabook platforms with strict height constraints (<1.0 mm).

IC Role / Device Role: High-side and low-side switch in dual-phase buck, driven by integrated controller (e.g., IR35204).

Use Value: 0.7 mm profile and DirectFET MT footprint allow placement beneath CPU socket, eliminating board area penalty of discrete SO-8 solutions.

GPU Power Delivery Module

AI Accelerator VRM

Use Scenario: 12 V input, 0.7–0.9 V output, 300+ A GPU rail requiring rapid transient response and thermal headroom.

IC Role / Device Role: Low-side FET in 8–12 phase design, leveraging dual-sided cooling for sustained 150 A per phase.

Use Value: R_θJC = 1.4 °C/W enables 40% higher current density than SO-8 MOSFETs before reaching 125°C junction limit.

Use Scenario: High-efficiency 48 V–12 V intermediate bus converter feeding AI ASICs with dynamic load steps >100 A/µs.

IC Role / Device Role: Primary switch in synchronous rectified LLC or buck-boost stage, handling 60+ A continuous.

Use Value: 210 mJ E_AS rating ensures survival during fault events like output short-circuit or controller lockup without external snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6622TRPBF	30 V, 1.5 mΩ @ 10 V, 52 nC Q_g, same DirectFET MT package	Lower R_DS(on) but higher gate charge increases switching loss above 600 kHz	Select when conduction loss dominates (e.g., low-frequency, high-current phases); avoid in >800 kHz designs due to Q_g-driven losses.
SiR626DP	30 V, 1.7 mΩ @ 10 V, 40 nC Q_g, PowerPAK® SO-8 package (1.6 mm height)	Higher R_θJA (45 °C/W vs. 12.5 °C/W effective with dual cooling), no top-side drain	Choose for legacy SO-8 layout reuse where dual cooling is unavailable; accept 12–15% lower power density and higher thermal margin requirement.

Compared with IRF6618TRPBF, IRF6622TRPBF trades higher gate charge for lower on-resistance-favorable only below 600 kHz-while SiR626DP sacrifices thermal performance for footprint compatibility, limiting its use in high-power-density VRMs where junction temperature must stay below 110°C under full load.

Availability

IRF6618TRPBF is available at Aetrix Electronics and suitable for server CPU VRMs, client notebook power stages, GPU power modules, and AI accelerator intermediate bus converters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production lots.

Supply support for IRF6618TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with deep expertise in silicon and packaging innovation for high-efficiency power conversion.

The IRF6618TRPBF belongs to Infineon's DirectFET™ power MOSFET product line, engineered specifically for high-frequency, high-current DC-DC conversion in computing and data center applications where thermal density and switching efficiency are critical.

FAQ

Is IRF6618TRPBF pin-compatible with SO-8 MOSFETs?

No. IRF6618TRPBF uses the DirectFET MT package with top-side drain and bottom-side source/gate pads-physically and electrically incompatible with SO-8 footprints. Layout requires dedicated copper pads matching the 6.35 × 5.05 mm MT outline and thermal via placement per AN-1035.

What is the maximum recommended gate drive voltage?

The absolute maximum V_GS is ±20 V, but the device is fully enhanced at 10 V and operates reliably down to 4.5 V. For optimal efficiency and reliability, gate drive should be clamped between 4.5 V and 12 V-exceeding 12 V provides negligible R_DS(on) improvement while increasing gate oxide stress.

Can IRF6618TRPBF be used in hard-switched PFC stages?

No. It is not rated for continuous 600 V operation or designed for PFC topologies. Its 30 V V_DS rating limits use to secondary-side DC-DC conversion only. For PFC, select 600 V+ superjunction MOSFETs such as IPW65R045CP or CoolMOS™ C7 series.

Does IRF6618TRPBF require a gate resistor for stability?

Yes. A 2–5 Ω gate resistor (non-inductive, placed adjacent to the gate pad) is required to dampen ringing caused by PCB trace inductance interacting with Q_gd. Without it, overshoot exceeding 20 V can occur during fast switching, risking gate oxide degradation over time.

IRF6618TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MT

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Ta), 170A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.2mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 65 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5640 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 89W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MT

IRF6618TRPBF FAQ

1.How can I place an order for IRF6618TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6618TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6618TRPBF reliable?

The price and inventory of IRF6618TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6618TRPBF is usually 5 days.

3.What payment methods are accepted for IRF6618TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6618TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6618TRPBF?

IRF6618TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6618TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6618TRPBF?

For technical support, including IRF6618TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6618TRPBF requirements.

6.How does Aetrix verify that IRF6618TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF6618TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6618TRPBF meets industry standards.

7.What is the process for return or replacement of IRF6618TRPBF?

All IRF6618TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6618TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6618TRPBF part is unused and in its original packaging.

Return procedure for IRF6618TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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