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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6619

Name: IRF6619
Brand: Infineon Technologies
SKU: IRF6619
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6619

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MX

Datasheet:: IRF6619.pdf

Description:: MOSFET N-CH 20V 30A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Inventory:13,859

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Product details

Overview

IRF6619 from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode Power MOSFET in DirectFET® MX package, optimized as a synchronous rectifier FET in high-frequency 12 V input buck converters. It delivers 1.65 mΩ R_DS(on) @ 10 V, 38 nC total gate charge, and 780 pF Crss - enabling low conduction and switching losses for CPU core DC-DC applications operating above 1 MHz.

For engineers reviewing the IRF6619 datasheet, IRF6619 pinout, IRF6619 application, or IRF6619 equivalent, key selection criteria include its ultra-low profile (0.7 mm), dual-sided cooling capability, C_dv/dt-induced turn-on immunity, and compatibility with standard SO-8 PCB footprints and reflow processes per AN-1035.

Technical Context

The IRF6619 employs HEXFET® silicon with trench-gate structure and is packaged in a copper-can DirectFET MX configuration where the drain is electrically and thermally connected to both top and bottom metal surfaces. Its gate threshold voltage of 1.55–2.45 V and negative temperature coefficient (−5.8 mV/°C) support stable parallel operation in multiphase VRMs.

This device is specifically tuned for synchronous buck topologies: low Q_gd/Q_g ratio (13.2 nC / 38 nC) minimizes Miller-induced shoot-through risk, while 18 nC Q_rr and 29–44 ns t_rr reduce body diode recovery loss during dead-time conduction.

Key Specifications

Parameter	Value and Actual Design Meaning
R_DS(on)	1.65 mΩ @ V_GS = 10 V, T_J = 25°C - enables <1 W conduction loss at 30 A in high-current CPU power stages
Q_g	38 nC typ - supports efficient 1–2 MHz switching with moderate gate driver strength (e.g., 2 A peak)
C_rss	780 pF - low reverse transfer capacitance improves noise immunity and reduces dv/dt-induced turn-on risk
V_GS(th)	1.55–2.45 V - ensures reliable turn-on with 3.3 V or 5 V gate drive while avoiding false triggering
R_θJC	1.4 °C/W - enables high-power dissipation via direct case-to-heatsink or PCB thermal vias
I_D (T_C = 25°C)	240 A - package-limited continuous current rating supports short-duration high-pulse loads in VRM transients
t_rr	29–44 ns - fast body diode recovery minimizes cross-conduction loss during synchronous rectification

Pinout & Package

IRF6619 uses the DirectFET® MX (Medium Size Can, X-Designation) package - a low-profile (0.7 mm), copper-can, double-sided cooling surface-mount package with no leads. The drain connects to both top and bottom metal surfaces; source and gate are on the bottom side only. PCB layout follows AN-1035 guidelines for stencil aperture and substrate pad design.

Pin/Terminal	Circuit Role	Design Meaning
Top Metal Surface	Drain (D)	Primary high-current path and primary thermal interface - soldered to top-side heatsink or thermal pad
Bottom Metal Pad (Large)	Drain (D)	Secondary thermal and electrical connection - enables dual-sided cooling and low-inductance return path
Bottom Metal Pad (Small, Left)	Source (S)	Low-side reference node for gate drive and current sensing - routed away from noisy switching nodes
Bottom Metal Pad (Small, Right)	Gate (G)	Control terminal requiring short, low-inductance gate loop - isolated from power planes per layout AN-1035

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g figure-of-merit	62.7 mΩ·nC - balances conduction and switching loss for >1 MHz VRM efficiency optimization
Dual-sided cooling interface	Reduces effective R_θJA by 80% vs. SO-8 - enables thermal management in space-constrained CPU power delivery
C_dv/dt immunity	Rated for high dV/dt stress in synchronous FET position - suppresses false turn-on during high-slew-rate node transitions
SO-8 footprint compatibility	Same PCB land pattern as SO-8 - allows drop-in upgrade from legacy packages without layout redesign
Low package inductance	Sub-nH source inductance - minimizes voltage overshoot and ringing during hard-switching transitions

Applications

Server CPU Core VRM

GPU Power Delivery

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.2 V @ up to 300 A to modern x86 and ARM server processors.

IC Role / Device Role / Timing Role: Synchronous rectifier FET in high-side or low-side position, switching at 500 kHz–1.5 MHz with precise dead-time control.

Use Value: 1.65 mΩ R_DS(on) and 38 nC Q_g reduce total power loss by ≥12% vs. prior-generation SO-8 MOSFETs under identical load and frequency conditions.

Use Scenario: Compact, high-density power stage on GPU PCBs where thermal headroom and board area are severely constrained.

IC Role / Device Role / Timing Role: Low-side synchronous FET in 3+1 or 4+1 phase topology, leveraging dual-sided cooling to maintain T_J < 125°C at full load.

Use Value: 0.7 mm profile and MX outline allow placement under GPU VRM inductors, reducing interconnect inductance and improving transient response.

AI Accelerator Board Power

High-Frequency Telecom DC-DC

Use Scenario: Point-of-load regulator for ASICs in AI training accelerators requiring rapid dynamic current slew (>100 A/µs).

IC Role / Device Role / Timing Role: Critical low-R_DS(on) output FET handling peak currents up to 240 A in burst-mode operation.

Use Value: 240 A pulsed rating and 1.4 °C/W R_θJC sustain >90% efficiency at 50–80% load while limiting junction temperature rise to <30°C.

Use Scenario: Isolated or non-isolated 48 V–12 V intermediate bus converter in 5G base station power modules.

IC Role / Device Role / Timing Role: Primary-side switch or secondary-side synchronous rectifier operating continuously at 1 MHz with tight thermal constraints.

Use Value: 780 pF Crss and 29 ns t_rr reduce EMI generation and body diode conduction loss, improving conducted emissions margin by 4–6 dBµV.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous rectifier FET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IRF6622	R_DS(on) = 1.35 mΩ @ 10 V, Q_g = 42 nC, same MX package	Slightly lower R_DS(on) but higher gate charge increases switching loss at >1 MHz	Preferred when conduction loss dominates (e.g., low-frequency, high-duty-cycle operation)
Vishay SiR626DP	R_DS(on) = 1.75 mΩ @ 10 V, Q_g = 32 nC, PowerPAK® SO-8 package	Higher R_DS(on) but lower Q_g and SO-8 footprint simplifies layout; no dual-sided cooling	Preferred when board-level thermal design favors single-sided heatsinking and layout reuse is critical

Compared with IRF6622 and SiR626DP, the IRF6619 offers the optimal balance of ultra-low R_DS(on), moderate Q_g, and dual-sided thermal performance - making it uniquely suited for high-frequency, high-current CPU/GPU VRMs where both efficiency and thermal density are limiting factors.

Availability

IRF6619 is available at Aetrix Electronics and suitable for server CPU core VRMs, AI accelerator board power, and high-frequency telecom DC-DC converters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IRF6619 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF6619 belongs to Infineon's DirectFET® Power MOSFET product line - engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing and communications infrastructure where thermal density and switching speed are critical.

FAQ

Is IRF6619 RoHS-compliant and halogen-free?

Yes. The IRF6619 meets RoHS Directive 2011/65/EU and is certified halogen-free per IEC 61249-2-21. Lead finish is 100% matte tin, and all packaging materials comply with Infineon's green policy - verified in the official Material Declaration (DocID: PS01051).

What is the maximum recommended gate drive voltage for IRF6619?

The absolute maximum V_GS is ±20 V, but Infineon specifies 10 V as the nominal gate drive for full R_DS(on) specification and reliability. Driving above 15 V provides negligible R_DS(on) improvement while increasing gate oxide stress and avalanche susceptibility during transients.

Can IRF6619 be used in paralleled configurations?

Yes - its negative V_GS(th) temperature coefficient (−5.8 mV/°C) enables inherent current sharing across multiple devices. Layout must ensure matched gate loop inductance and symmetrical thermal coupling; AN-1035 recommends Kelvin-source routing and individual gate resistors for stability.

Does IRF6619 require special PCB layout considerations beyond AN-1035?

Yes. Beyond AN-1035's stencil and pad recommendations, thermal vias under the bottom drain pad must be filled and capped to prevent solder wicking; gate traces must be ≤2 mm long with ground guard rings; and the top drain surface must remain unmasked for direct heatsink contact or thermal pad attachment.

IRF6619 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MX

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Ta), 150A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.2mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.45V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 57 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5040 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 89W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MX

IRF6619 FAQ

1.How can I place an order for IRF6619 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6619 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6619 reliable?

The price and inventory of IRF6619 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6619 is usually 5 days.

3.What payment methods are accepted for IRF6619?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6619 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6619?

IRF6619 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6619 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6619?

For technical support, including IRF6619 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6619 requirements.

6.How does Aetrix verify that IRF6619 is sourced from the original manufacturer or authorized distributors?

All IRF6619 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6619 meets industry standards.

7.What is the process for return or replacement of IRF6619?

All IRF6619 units undergo pre-shipment inspection (PSI). If there is an issue with IRF6619, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6619 part is unused and in its original packaging.

Return procedure for IRF6619:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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