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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6619TR1

Name: IRF6619TR1
Brand: Infineon Technologies
SKU: IRF6619TR1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6619TR1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MX

Datasheet:: IRF6619TR1.pdf

Description:: MOSFET N-CH 20V 30A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6619TR1 from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode DirectFET™ Power MOSFET optimized for synchronous buck converter high-side and low-side FET applications in 12 V bus CPU core DC-DC converters. It delivers 1.65 mΩ R_DS(on) at V_GS = 10 V, 38 nC total gate charge, and ultra-low package inductance, enabling high-efficiency operation above 1 MHz switching frequency in server and workstation power delivery.

For engineers reviewing the IRF6619TR1 datasheet, IRF6619TR1 pinout, IRF6619TR1 application, or IRF6619TR1 equivalent, key selection criteria include its 20 V V_DSS, C_dv/dt-induced turn-on immunity, dual-sided cooling capability, and compatibility with standard SO-8 footprint PCB layouts per AN-1035.

Technical Context

The IRF6619TR1 employs HEXFET® silicon in a copper-can DirectFET MX package, enabling thermal resistance R_θJC of 1.4 °C/W and R_θJA as low as 12.5 °C/W with double-sided cooling. Its gate threshold voltage (V_GS(th)) is 1.55–2.45 V with negative temperature coefficient (−5.8 mV/°C), supporting stable gate drive across −40 to +150 °C junction range.

Designed specifically for synchronous rectification, it features low Q_gd/Q_g ratio (13.2 nC / 38 nC), fast switching (t_r = 71 ns, t_f = 9.3 ns), and high C_dv/dt immunity-critical for preventing false turn-on in high-dV/dt node environments typical of multiphase VRMs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	20 V - Supports 12 V input bus with margin for transient overshoot in CPU VRM applications.
R_DS(on) @ V_GS = 10 V	1.65 mΩ - Enables <1 W conduction loss at 30 A continuous drain current, critical for high-current core rails.
Q_g (Total Gate Charge)	38 nC - Low gate drive power requirement supports efficient high-frequency PWM control up to 2 MHz.
C_iss	5040 pF - Minimizes Miller effect during switching transitions when paired with low-impedance gate drivers.
R_θJC	1.4 °C/W - Enables direct heatsink attachment to top-drain surface, improving thermal path efficiency by 80% vs. SO-8.
V_GS(th)	1.55–2.45 V - Ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers without level-shifting.
I_D @ T_C = 25 °C	240 A - Package-limited continuous current rating supports high peak-phase currents in multi-phase converters.

Pinout & Package

The IRF6619TR1 uses the DirectFET™ MX (Medium Size Can, X-Designation) package-a copper-can, top-drain, bottom-source surface-mount construction with 0.7 mm profile and SO-8 compatible footprint. Thermal pad on top (Drain) and bottom (Source) enables dual-sided cooling.

Pin/Terminal	Circuit Role	Design Meaning
Top Metal Pad	Drain (D)	Primary high-current output node; thermally coupled to heatsink or PCB copper pour for junction-to-ambient heat dissipation.
Bottom Source Pads	Source (S)	Low-impedance return path for load current; electrically and thermally connected to PCB ground plane.
Side Gate Terminal	Gate (G)	Control input with 2.3 Ω internal gate resistance; requires low-inductance routing to minimize ringing in >1 MHz operation.

Key Features

Feature	Design Value
Ultra-low R_DS(on) + Q_g product	62.7 mΩ·nC - Reduces combined conduction and switching losses in high-frequency synchronous buck stages.
DirectFET™ MX dual-sided cooling	Thermal resistance improved by 80% vs. SO-8 - Enables higher power density without forced airflow.
C_dv/dt-induced turn-on immunity	Optimized body diode and gate structure - Prevents spurious turn-on during high dV/dt transitions in multiphase VRMs.
SO-8 footprint compatibility	Same layout geometry as legacy SO-8 - Allows drop-in replacement in existing designs without PCB revision.
1.65 mΩ R_DS(on) @ 10 V	Lower than comparable 20 V MOSFETs (e.g., IRF6616: 2.0 mΩ) - Delivers measurable efficiency gain in 30–60 A core rail applications.

Applications

Server CPU Core VRM

Workstation GPU Power Stage

Use Scenario: 3–6 phase 12 V input synchronous buck converter delivering up to 300 W to Intel/AMD CPU cores.

IC Role / Device Role / Timing Role: Low-side synchronous FET in each phase leg, switching at 500 kHz–2 MHz with precise dead-time control.

Use Value: 1.65 mΩ R_DS(on) reduces conduction loss by ~25% vs. 2.2 mΩ alternatives, directly improving full-load efficiency by 0.8–1.2%.

Use Scenario: High-current power stage for NVIDIA/AMD discrete GPUs requiring rapid transient response and low ripple.

IC Role / Device Role / Timing Role: High-side FET in interleaved buck topology, operating with tight gate timing to minimize shoot-through risk.

Use Value: High C_dv/dt immunity prevents false turn-on during aggressive voltage slew rates (>50 V/ns), ensuring system reliability under dynamic load steps.

AI Accelerator Board Power

High-Density Telecom PSU

Use Scenario: Compact 48 V–12 V intermediate bus converter powering ASIC arrays in edge AI inference modules.

IC Role / Device Role / Timing Role: Primary switch in LLC or phase-shifted full-bridge secondary side, handling 40+ A continuous current.

Use Value: Dual-sided cooling allows thermal management within 8 mm height envelope, eliminating need for external heatsinks in space-constrained modules.

Use Scenario: 1 kW telecom rectifier with distributed 12 V point-of-load regulation across multiple boards.

IC Role / Device Role / Timing Role: Synchronous rectifier in isolated forward or active-clamp forward secondary side.

Use Value: Ultra-low package inductance (<0.5 nH) minimizes voltage spikes during hard commutation, reducing snubber component count and board area.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6616TR1PBF	R_DS(on) = 2.0 mΩ @ 10 V; Q_g = 32 nC; same MX package	Higher conduction loss but lower gate charge - better suited for lower-current, higher-frequency resonant topologies	Select when gate drive power budget is tighter than conduction loss budget, e.g., in 1–3 A auxiliary rails.
SiR626DP-T1-GE3	R_DS(on) = 1.55 mΩ @ 10 V; Q_g = 42 nC; PowerPAK® 1212-8 package	Lower R_DS(on) but no top-side cooling - limited to single-sided thermal path and higher R_θJA	Select only if PCB layout cannot accommodate top-side heatsinking and thermal margin exceeds 25 °C/W ambient.

Compared with IRF6616TR1PBF and SiR626DP-T1-GE3, the IRF6619TR1 uniquely balances lowest R_DS(on), moderate Q_g, and dual-sided thermal capability-making it optimal for high-current, high-density CPU/GPU VRMs where both electrical and thermal performance are simultaneously constrained.

Availability

IRF6619TR1 is available at Aetrix Electronics and suitable for server CPU core VRMs, AI accelerator board power stages, and high-density telecom PSUs requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.

Supply support for IRF6619TR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with roots in Siemens' semiconductor division and acquisition of International Rectifier in 2015.

The DirectFET™ product line was developed to replace traditional leaded and SO-8 packages in high-frequency power conversion, targeting server, telecom, and computing applications demanding ultra-low loss and superior thermal performance in minimal height.

FAQ

What is the maximum continuous drain current for IRF6619TR1 at 70°C ambient?

The IRF6619TR1 supports 30 A continuous drain current at T_A = 70°C with V_GS = 10 V when mounted on a 1 in² copper board. This rating assumes natural convection cooling and accounts for derating due to thermal resistance R_θJA = 45 °C/W. For higher currents, forced airflow or dual-sided cooling is required to maintain T_J ≤ 150°C.

Does IRF6619TR1 require special PCB layout considerations for thermal performance?

Yes. To achieve rated R_θJC = 1.4 °C/W, the top Drain pad must be soldered to a thermally conductive heatsink or large copper area, while the bottom Source pads require ≥2 oz copper with multiple thermal vias to inner ground planes. Application note AN-1035 specifies stencil design, substrate thickness, and reflow profiles to ensure void-free solder joints on both sides.

Can IRF6619TR1 be used as a high-side switch with 12 V gate drive?

Yes. With V_GS(th) = 1.55–2.45 V and guaranteed R_DS(on) ≤ 2.2 mΩ at V_GS = 4.5 V, the IRF6619TR1 fully enhances using standard 12 V gate drivers. Its low Q_gd/Q_g ratio ensures robustness against Miller-induced turn-on, making it suitable for high-side synchronous buck operation without bootstrap complexity.

What is the avalanche energy rating for IRF6619TR1 under repetitive conditions?

The IRF6619TR1 has a repetitive avalanche energy (E_AR) of 300 mJ at T_J = 25°C and 100 mJ at T_J = 125°C, measured with I_D = 24 A and pulse width < 1 µs. Safe operation requires that junction temperature remains below 150°C during each event, and duty cycle must stay below 0.1% to prevent thermal runaway.

IRF6619TR1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MX

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Ta), 150A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.2mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.45V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 57 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5040 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 89W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MX

IRF6619TR1 FAQ

1.How can I place an order for IRF6619TR1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6619TR1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6619TR1 reliable?

The price and inventory of IRF6619TR1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6619TR1 is usually 5 days.

3.What payment methods are accepted for IRF6619TR1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6619TR1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6619TR1?

IRF6619TR1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6619TR1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6619TR1?

For technical support, including IRF6619TR1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6619TR1 requirements.

6.How does Aetrix verify that IRF6619TR1 is sourced from the original manufacturer or authorized distributors?

All IRF6619TR1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6619TR1 meets industry standards.

7.What is the process for return or replacement of IRF6619TR1?

All IRF6619TR1 units undergo pre-shipment inspection (PSI). If there is an issue with IRF6619TR1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6619TR1 part is unused and in its original packaging.

Return procedure for IRF6619TR1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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