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Infineon Technologies IRF6619TR1PBF
- Part No.:
- IRF6619TR1PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- DirectFET™ Isometric MX
- Datasheet:
-
IRF6619TR1PBF.pdf
- Description:
- MOSFET N-CH 20V 30A DIRECTFET
- Quantity:
- Payment:
- Shipping:
Inventory:2,000
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Product details
Overview
IRF6619TR1PBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode Power MOSFET in DirectFET® MX package, optimized for synchronous buck converter high-side and low-side FET applications. It delivers 1.65 mΩ RDS(on) @ 10 V, 38 nC total gate charge, and 780 pF Crss - enabling high-efficiency, >1 MHz switching in CPU core DC-DC converters.
For engineers reviewing the IRF6619TR1PBF datasheet, IRF6619TR1PBF pinout, IRF6619TR1PBF application, or IRF6619TR1PBF equivalent, key selection criteria include Cdv/dt immunity, dual-sided cooling capability, ultra-low package inductance, and thermal resistance of 1.4 °C/W (Junction-to-Case), critical for thermally constrained point-of-load designs.
Technical Context
The IRF6619TR1PBF employs HEXFET® silicon with trench-gate structure and is packaged in a copper-can DirectFET® MX outline, where the top metal surface is the Drain and bottom substrate serves as Source/Drain terminals. Its gate threshold voltage (1.55–2.45 V) and negative temperature coefficient (−5.8 mV/°C) support stable parallel operation under thermal stress.
This device is specifically characterized for 12 V bus synchronous buck converters: it achieves 80% lower thermal resistance than prior SO-8 equivalents, supports 24 A pulsed drain current, and exhibits 18 nC reverse recovery charge (Qrr) with 29–44 ns trr - minimizing body diode conduction loss during dead-time transitions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| RDS(on) | 1.65 mΩ @ VGS = 10 V, TJ = 25°C - enables <1 W conduction loss at 30 A, critical for high-current CPU VRMs |
| Qg | 38 nC typ - reduces gate drive power and allows use of smaller, lower-cost gate drivers |
| Crss | 780 pF - limits Miller-induced turn-on risk in high-dv/dt synchronous FET switching |
| RθJC | 1.4 °C/W - supports dual-sided cooling to maintain TJ < 125°C under 100 W dissipation |
| ID (cont, TC=25°C) | 240 A - package-limited rating reflecting copper-can thermal mass and interconnect robustness |
| VDS | 20 V - rated for 12 V input bus with margin for transient overshoot and ringing |
| Qrr | 18 nC typ - lowers energy loss during body diode commutation in hard-switched buck topologies |
Pinout & Package
IRF6619TR1PBF uses the DirectFET® MX package: a low-profile (0.7 mm), copper-can, double-sided cooling design with exposed top Drain and bottom Source/Drain terminals. The package footprint matches SO-8 layouts but eliminates leadframe inductance and thermal bottlenecks.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Top Metal Surface | Drain (D) | Primary high-current path; thermally coupled to heatsink or PCB copper pour for dual-sided cooling |
| Bottom Substrate Pad (Large) | Source (S) | Main source return; electrically and thermally connected to PCB ground plane |
| Bottom Substrate Pad (Small) | Drain (D) | Secondary drain connection for improved current sharing and reduced loop inductance |
| Side Terminal (Exposed) | Gate (G) | Low-inductance gate interface; requires controlled-impedance routing to minimize oscillation |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) + Qg product | 62.7 mΩ·nC - minimizes combined conduction and switching loss in high-frequency (>1 MHz) VRMs |
| DirectFET® MX copper-can construction | 1.4 °C/W RθJC - enables 80% lower thermal resistance vs. SO-8 MOSFETs, verified per Fig. 3 |
| Cdv/dt-induced turn-on immunity | Tested per sync-buck conditions - prevents false turn-on during high-slew-rate node transitions |
| Optimized for 12 V bus synchronous buck | Characterized at VGS = 4.5 V and 10 V - ensures robust operation with standard controller gate drive |
| Body diode Qrr and trr | 18 nC / 29–44 ns - reduces dead-time loss and EMI in hard-switched topologies |
Applications
| Server CPU Core VRM | GPU Voltage Regulator |
|---|---|
Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.2 V @ up to 300 A to modern x86 and ARM server processors. IC Role / Device Role / Timing Role: Low-side synchronous FET handling high RMS current and fast transient load steps. Use Value: 1.65 mΩ RDS(on) and 1.4 °C/W RθJC jointly limit junction temperature rise to <35°C at 150 A, enabling compact thermal design. | Use Scenario: Point-of-load regulator on graphics card PCB delivering 0.9–1.3 V @ up to 200 A to discrete GPU die. IC Role / Device Role / Timing Role: High-side FET in interleaved 4+ phase topology operating at 800 kHz–1.2 MHz. Use Value: 780 pF Crss and low Qgd/Qg ratio suppress Miller turn-on during high-dv/dt switching, improving reliability under transient load jumps. |
| AI Accelerator Power Stage | High-Density Telecom DC-DC Module |
Use Scenario: Compact 48 V–to–0.8 V conversion stage powering ASIC-based AI inference chips in data center accelerators. IC Role / Device Role / Timing Role: Primary switching FET in stacked-gan-compatible half-bridge configuration with tight layout constraints. Use Value: 0.7 mm profile and SO-8 footprint allow drop-in replacement in space-constrained modules without redesigning PCB stencil or assembly process. | Use Scenario: 12 V input, isolated/non-isolated DC-DC module for 5G baseband units requiring >95% efficiency at full load. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or active-clamp forward topology. Use Value: Dual-sided cooling capability enables mounting on both primary and secondary PCB layers, reducing overall module height while maintaining thermal headroom. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel Power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF6622TR1PBF | RDS(on) = 1.35 mΩ @ 10 V; Qg = 42 nC; same MX package | Slightly lower RDS(on) but higher gate charge increases driver loss at >1 MHz | Prefer when conduction loss dominates; verify gate driver capability for 42 nC load |
| SiR626DP-T1-GE3 | RDS(on) = 1.75 mΩ @ 10 V; Qg = 33 nC; PowerPAK® SO-8 package | Higher RDS(on), lower Qg, no dual-sided cooling - RθJA = 45 °C/W vs. 12.5 °C/W (DirectFET) | Choose only if board-level cooling is limited to single-side and switching frequency <500 kHz |
Compared with IRF6622TR1PBF and SiR626DP-T1-GE3, the IRF6619TR1PBF offers the optimal balance of ultra-low RDS(on), moderate Qg, and superior thermal performance - making it uniquely suited for high-density, high-frequency CPU/GPU VRMs where junction temperature control is non-negotiable.
Availability
IRF6619TR1PBF is available at Aetrix Electronics and suitable for server CPU core VRMs, AI accelerator power stages, and high-density telecom DC-DC modules requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for IRF6619TR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.
The IRF6619TR1PBF belongs to Infineon's DirectFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing and communications infrastructure where thermal density and switching speed are critical.
FAQ
What is the maximum continuous drain current for IRF6619TR1PBF at 70°C ambient?
The IRF6619TR1PBF supports 30 A continuous drain current at TA = 70°C with VGS = 10 V, as specified in the Absolute Maximum Ratings table. This rating assumes surface mounting on a 1-inch square copper board with steady-state conditions and thermocouple measurement at the top (Drain) surface per test methodology in the datasheet.
Does IRF6619TR1PBF require special PCB layout considerations for thermal performance?
Yes - optimal thermal performance requires using both top-side (Drain) and bottom-side (Source) copper planes for dual-sided cooling, per DirectFET Application Note AN-1035. The MX outline demands specific stencil aperture design and substrate pad geometry to ensure void-free solder joint formation and mechanical reliability under thermal cycling.
Can IRF6619TR1PBF be used in avalanche mode?
Yes - the device is rated for single-pulse avalanche energy (EAS) up to 890 mJ at TJ = 25°C, with allowable avalanche current dependent on pulse width and junction temperature rise. Repetitive avalanche operation is permitted only if TJ remains below 150°C, and must follow the derating curves in Figures 14 and 15.
Is IRF6619TR1PBF RoHS-compliant and halogen-free?
Yes - IRF6619TR1PBF is RoHS-compliant (2011/65/EU) and halogen-free per Infineon's material declarations. The "PBF" suffix explicitly denotes lead-free (Pb-free) plating and packaging, and the device meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) requirements.
IRF6619TR1PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- DirectFET™ Isometric MX
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Ta), 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.2mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 2.45V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 57 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5040 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.8W (Ta), 89W (Tc)
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DIRECTFET™ MX
IRF6619TR1PBF FAQ
1.How can I place an order for IRF6619TR1PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF6619TR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF6619TR1PBF reliable?
The price and inventory of IRF6619TR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6619TR1PBF is usually 5 days.
3.What payment methods are accepted for IRF6619TR1PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6619TR1PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF6619TR1PBF?
IRF6619TR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF6619TR1PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF6619TR1PBF?
For technical support, including IRF6619TR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6619TR1PBF requirements.
6.How does Aetrix verify that IRF6619TR1PBF is sourced from the original manufacturer or authorized distributors?
All IRF6619TR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6619TR1PBF meets industry standards.
7.What is the process for return or replacement of IRF6619TR1PBF?
All IRF6619TR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6619TR1PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF6619TR1PBF part is unused and in its original packaging.
Return procedure for IRF6619TR1PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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