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Infineon Technologies IRF6619TRPBF
- Part No.:
- IRF6619TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- DirectFET™ Isometric MX
- Datasheet:
-
IRF6619TRPBF.pdf
- Description:
- MOSFET N-CH 20V 30A DIRECTFET
- Quantity:
- Payment:
- Shipping:
Inventory:3,779
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Product details
Overview
IRF6619TRPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode Power MOSFET in DirectFET® MX package, optimized for synchronous buck FETs in high-frequency DC-DC converters. It delivers 1.65 mΩ RDS(on) @ 10 V, 38 nC total gate charge, and 780 pF Crss, enabling low conduction and switching losses at >1 MHz operation for CPU core power delivery.
For engineers reviewing the IRF6619TRPBF datasheet, IRF6619TRPBF pinout, IRF6619TRPBF application, or IRF6619TRPBF equivalent, key selection criteria include Cdv/dt immunity, dual-sided cooling capability, ultra-low package inductance, and SO-8 footprint compatibility with 0.7 mm profile.
Technical Context
The IRF6619TRPBF employs HEXFET® silicon on a copper substrate DirectFET® MX package, enabling top-side (drain) and bottom-side (source) thermal paths. Its gate threshold voltage of 1.55–2.45 V and negative temperature coefficient (−5.8 mV/°C) support stable parallel operation in multiphase VRMs.
Designed specifically for 12 V input synchronous buck converters, it balances low RDS(on), low Qgd/Qgs2 ratio (3.8), and high Cdv/dt immunity to suppress false turn-on during high di/dt transitions in high-side switching configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| RDS(on) | 1.65 mΩ @ VGS = 10 V, TJ = 25°C - enables <1 W conduction loss at 30 A in CPU core rails |
| Qg | 38 nC - reduces gate drive power and supports >1 MHz PWM without excessive driver stress |
| Crss | 780 pF - limits Miller feedback, improving noise immunity in high dv/dt environments |
| RθJC | 1.4 °C/W - allows direct heatsink mounting to drain pad for efficient dual-sided cooling |
| VGS(th) | 1.55–2.45 V - ensures reliable turn-on with standard 3.3 V or 5 V gate drivers |
| ID (continuous) | 30 A @ TC = 25°C - sustains high current in compact VRM layouts with forced airflow |
| Qrr | 18 nC - minimizes body diode recovery loss during dead-time in synchronous rectification |
Pinout & Package
IRF6619TRPBF uses the DirectFET® MX outline: a copper-can, double-sided cooling package with no leads, mounted directly to PCB via top (drain) and bottom (source) metal pads. Footprint matches SO-8 but with 0.7 mm height and exposed drain on top surface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Top Metal Pad | Drain (D) | Primary heat path and high-current output node; electrically connected to internal die drain |
| Bottom Metal Pad (large) | Source (S) | Main current return path and thermal interface to PCB ground plane |
| Bottom Metal Pad (small) | Gate (G) | Isolated gate connection; requires controlled trace routing to minimize coupling and ringing |
Key Features
| Feature | Design Value |
|---|---|
| Dual-sided cooling | Enables simultaneous thermal extraction from top (drain heatsink) and bottom (PCB copper), reducing RθJA by 80% vs. SO-8 |
| Ultra-low package inductance | Minimizes voltage overshoot and EMI during hard switching at >1 MHz, critical for sub-100 ns dead-time control |
| Cdv/dt-induced turn-on immunity | Validated for robust operation under high di/dt conditions in synchronous buck high-side position without external gate clamping |
| SO-8 footprint compatibility | Allows drop-in replacement in existing layouts without redesign; supports vapor-phase, IR, and convection reflow per AN-1035 |
| Optimized for 12 V bus converters | Parameters tuned for RDS(on), Qg, and Qgd trade-off specific to 12 V input, 1–2 V output VRMs powering modern CPUs |
Applications
| CPU Core Voltage Regulator | GPU Power Delivery |
|---|---|
Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.3 V to Intel/AMD processors at up to 300 A peak. IC Role / Device Role / Timing Role: Synchronous FET in high-side position, switching at 500 kHz–1.5 MHz with precise dead-time control. Use Value: 1.65 mΩ RDS(on) and 38 nC Qg reduce combined conduction + switching loss to <1.2 W per phase at 30 A, enabling higher efficiency at full load. | Use Scenario: Compact, high-density VRM on graphics card PCB delivering 0.9–1.2 V to GPU die with tight thermal constraints. IC Role / Device Role / Timing Role: Low-profile power switch operating in parallel configuration with integrated gate drivers. Use Value: 0.7 mm profile and dual-sided cooling allow placement under heatsinks; 780 pF Crss prevents false turn-on during fast GPU load transients. |
| Server Memory Regulator | AI Accelerator Power Stage |
Use Scenario: Point-of-load converter for DDR5 memory modules requiring fast transient response and low output ripple. IC Role / Device Role / Timing Role: Synchronous rectifier in 2-phase interleaved buck, operating at 1 MHz with 30 ns dead time. Use Value: 18 nC Qrr and 0.8 V VSD minimize reverse recovery loss and forward drop, preserving regulation accuracy during burst-mode loads. | Use Scenario: High-efficiency power stage for FPGA or ASIC-based AI accelerators with dynamic voltage scaling. IC Role / Device Role / Timing Role: High-frequency switching FET in adaptive voltage positioning (AVP) loop with real-time VOUT adjustment. Use Value: Stable VGS(th) temperature coefficient (−5.8 mV/°C) ensures consistent turn-on timing across −40°C to +125°C junction range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF6622TRPBF | RDS(on) = 1.35 mΩ @ 10 V, Qg = 42 nC, same MX package | Slightly lower RDS(on) but higher gate charge increases driver loss at >1 MHz | Prefer when conduction loss dominates; verify gate driver capability for 42 nC load |
| SiR626DP-T1-GE3 | RDS(on) = 1.5 mΩ @ 10 V, Qg = 35 nC, PowerPAK® SO-8 package | Lower Qg improves switching efficiency but lacks dual-sided cooling and has higher RθJA | Prefer when board space is constrained and top-side cooling is unavailable |
Compared with IRF6622TRPBF and SiR626DP-T1-GE3, the IRF6619TRPBF offers the optimal balance of low RDS(on), moderate Qg, and superior thermal performance via DirectFET® dual-sided cooling-making it uniquely suited for thermally demanding, high-frequency CPU/GPU VRMs where both electrical and thermal margins are critical.
Availability
IRF6619TRPBF is available at Aetrix Electronics and suitable for CPU core voltage regulators, GPU power delivery systems, and AI accelerator power stages requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial and computing OEMs.
Supply support for IRF6619TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon and wide-bandgap device design.
The IRF6619TRPBF belongs to Infineon's DirectFET® power MOSFET product line, engineered specifically for high-frequency, high-efficiency DC-DC conversion in computing and data center applications where thermal density and switching speed are primary constraints.
FAQ
What is the maximum continuous drain current for IRF6619TRPBF at 70°C ambient?
The IRF6619TRPBF supports 20 A continuous drain current at TA = 70°C with surface-mount mounting on a 1 in² copper board. This rating assumes still air and accounts for thermal derating beyond 25°C ambient, as specified in the Absolute Maximum Ratings table on page 2 of the official datasheet.
Does IRF6619TRPBF require special PCB layout considerations for thermal performance?
Yes-optimal thermal performance requires dedicated copper areas on both top (for drain pad heatsinking) and bottom (for source pad conduction) layers, per DirectFET® AN-1035 guidelines. Minimum recommended copper area is 1 in² per side, with thermal vias under the source pad to inner ground planes.
Can IRF6619TRPBF be used in avalanche mode?
Yes-the IRF6619TRPBF is rated for single-pulse avalanche energy (EAS) up to 1000 mJ at TJ = 25°C. Repetitive avalanche is permitted only if junction temperature remains below 150°C and pulse parameters comply with Figures 14–15 and AN-1005 guidance on transient thermal impedance.
Is IRF6619TRPBF RoHS-compliant and halogen-free?
Yes-IRF6619TRPBF is RoHS-compliant (2011/65/EU) and halogen-free per IEC 61249-2-21. The "TRPBF" suffix confirms lead-free plating and green packaging; full compliance documentation is available in Infineon's material declaration database under order code IRF6619TRPBF.
IRF6619TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- DirectFET™ Isometric MX
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Ta), 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.2mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 2.45V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 57 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5040 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.8W (Ta), 89W (Tc)
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DIRECTFET™ MX
IRF6619TRPBF FAQ
1.How can I place an order for IRF6619TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF6619TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF6619TRPBF reliable?
The price and inventory of IRF6619TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6619TRPBF is usually 5 days.
3.What payment methods are accepted for IRF6619TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6619TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF6619TRPBF?
IRF6619TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF6619TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF6619TRPBF?
For technical support, including IRF6619TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6619TRPBF requirements.
6.How does Aetrix verify that IRF6619TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF6619TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6619TRPBF meets industry standards.
7.What is the process for return or replacement of IRF6619TRPBF?
All IRF6619TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6619TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF6619TRPBF part is unused and in its original packaging.
Return procedure for IRF6619TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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