Infineon Technologies IRF6620TR1

Overview

IRF6620TR1 from Infineon Technologies (formerly International Rectifier) is a 20V N-channel enhancement-mode Power MOSFET in DirectFET MX package, optimized for high-frequency synchronous buck converters in CPU core power delivery. It delivers 2.7 mΩ R_DS(on) @ V_GS = 10 V, 28 nC total gate charge, and 1.4 °C/W junction-to-case thermal resistance, enabling ultra-low conduction and switching losses in 12 V input DC-DC applications.

For engineers reviewing the IRF6620TR1 datasheet, IRF6620TR1 pinout, IRF6620TR1 application, or IRF6620TR1 equivalent, key selection criteria include C_dv/dt immunity for robust synchronous FET operation, dual-sided cooling compatibility, low-profile 0.7 mm height, and SO-8 footprint compatibility with standard SMT assembly processes.

Technical Context

The IRF6620TR1 employs HEXFET silicon with DirectFET MX packaging to achieve minimized package inductance and enhanced thermal transfer via top- and bottom-side copper exposure. Its gate threshold voltage (1.55–2.45 V) and low Q_gd/Q_gs ratio support fast, controlled turn-on/turn-off in high-dV/dt environments typical of multiphase VRMs.

Designed specifically for 12 V bus synchronous buck converters, it balances R_DS(on), Q_g, and C_oss (1160 pF) to reduce both conduction loss (I²R) and switching loss (½CV²f), while its body diode exhibits 23–35 ns reverse recovery time and 13–20 nC Q_rr under 22 A, 100 A/µs di/dt conditions.

Key Specifications

Pinout & Package

IRF6620TR1 uses the DirectFET MX surface-mount package (6.25 × 4.80 × 0.70 mm), featuring exposed top and bottom copper pads for dual-sided thermal management and no traditional leadframe. The package has three terminals: Source (S), Drain (D), and Gate (G), with internal parallel die configuration for low R_DS(on) and inductance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency synchronous buck FET applications.

Compared with IRF6614TR1PBF and SiR626DP-T1-GE3, the IRF6620TR1 offers the lowest R_DS(on) in its class with balanced Q_g, making it optimal for high-current, medium-frequency CPU VRMs where conduction loss dominates total loss budget.

Availability

IRF6620TR1 is available at Aetrix Electronics and suitable for CPU core voltage regulators, GPU power delivery modules, and AI accelerator board power systems requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.

Supply support for IRF6620TR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control solutions with vertical integration from silicon design to packaging.

The DirectFET product line was developed to address thermal and inductive limitations of traditional MOSFET packages in high-frequency, high-current DC-DC conversion - targeting server, computing, and telecom power systems demanding >90% efficiency and <1 mm profile.

FAQ

What is the maximum continuous drain current for IRF6620TR1 at 70°C ambient temperature?

The IRF6620TR1 supports 15 A continuous drain current at T_A = 70°C with standard PCB mounting (1 in² 2 oz Cu, 2-layer). This rating assumes natural convection and accounts for R_θJA = 20 °C/W under those conditions. For higher currents, forced airflow or dual-sided cooling must be implemented to maintain T_J ≤ 150°C.

Does IRF6620TR1 require a gate resistor for stability in synchronous buck applications?

Yes - a 2–5 Ω gate resistor is recommended between driver output and gate terminal to dampen ringing caused by parasitic inductance in the gate loop. This value balances switching speed control and EMI suppression, especially critical given the device's low Q_gd and high dV/dt capability. Layout must minimize gate loop area to avoid oscillation.

Can IRF6620TR1 be used as a low-side switch in a synchronous buck converter?

Yes - the IRF6620TR1 is rated for bidirectional conduction through its integral body diode and supports synchronous rectification in low-side position. Its 23–35 ns t_rr and low Q_rr (13–20 nC) minimize reverse recovery loss, but optimal performance requires precise timing to avoid shoot-through during dead-time transitions.

Is the DirectFET MX package RoHS-compliant and lead-free?

Yes - the IRF6620TR1 is manufactured with lead-free terminations and complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1). The package uses matte tin plating over copper and meets IPC/JEDEC standards for reflow compatibility up to 260°C peak temperature.