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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6620TR1PBF

Name: IRF6620TR1PBF
Brand: Infineon Technologies
SKU: IRF6620TR1PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6620TR1PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MX

Datasheet:: IRF6620TR1PBF.pdf

Description:: MOSFET N-CH 20V 27A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6620TR1PBF from Infineon Technologies (formerly International Rectifier) is a 20V N-channel DirectFET™ power MOSFET optimized for high-frequency synchronous buck converters in CPU core power delivery. It delivers 2.7 mΩ R_DS(on) at V_GS = 10 V, 28 nC total gate charge, and ultra-low 0.7 mm profile-enabling dual-sided cooling and 80% improved thermal resistance versus prior packages. Used as the high-side or low-side switch in 12 V input DC-DC converters powering modern processors.

For engineers reviewing the IRF6620TR1PBF datasheet, IRF6620TR1PBF pinout, IRF6620TR1PBF application, or IRF6620TR1PBF equivalent, key selection criteria include C_dv/dt immunity (critical for synchronous FETs), R_DS(on)/Q_g trade-off balance, DirectFET MX outline compatibility with SO-8 footprints, and junction-to-PCB thermal resistance of 1.0 °C/W under double-sided cooling.

Technical Context

This MOSFET employs trench-gate HEXFET® silicon in a copper-can DirectFET MX package with top-side drain and bottom-side source/gate terminals-enabling simultaneous PCB-side and heatsink-side thermal paths. Its gate threshold voltage (1.55–2.45 V) and negative temperature coefficient (−5.8 mV/°C) support stable parallel operation in multiphase VRMs.

The device is characterized for unclamped inductive switching with 22 A avalanche current and 160 mJ single-pulse avalanche energy at T_J = 25°C. Its low Crss (560 pF) and fast switching (t_r = 80 ns, t_f = 6.6 ns) minimize shoot-through risk and EMI in high-dV/dt environments typical of 500 kHz–1 MHz buck stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum bus voltage rating for 12 V input systems with margin against transients.
R_DS(on)	2.7 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 27 A continuous drain current (T_C = 25°C).
Q_g	28 nC (typ.) - Low gate drive power requirement supports efficient 1 MHz+ PWM control with standard gate drivers.
R_θJ-PCB	1.0 °C/W - Achieved with double-sided cooling; enables >90 W power dissipation on 1-in² Cu board.
C_oss	1160 pF - Low output capacitance reduces turn-off energy loss and improves light-load efficiency.
I_D (cont)	22 A @ T_A = 70°C - Sustained current capability in compact, thermally constrained VRM layouts.
V_SD	0.8–1.0 V - Body diode forward voltage impacts dead-time losses and reverse recovery behavior in synchronous rectification.

Pinout & Package

IRF6620TR1PBF uses the DirectFET MX outline: a copper-can, top-drain, bottom-source/gate package with 0.7 mm height and SO-8 footprint compatibility. The substrate features exposed drain (top metal), source (bottom center pad), and gate (bottom corner pad) terminals-designed for dual-sided thermal management and low-inductance PCB layout.

Pin/Terminal	Circuit Role	Design Meaning
Top Metal Surface	Drain (D)	Primary high-current path; serves as thermal interface to heatsink or thermal plane-reduces R_θJC to 1.4 °C/W.
Bottom Center Pad	Source (S)	Low-inductance return path; connects directly to ground plane-minimizes switching loop area and EMI.
Bottom Corner Pad	Gate (G)	Control terminal with low parasitic inductance; enables fast, clean turn-on/turn-off without oscillation.

Key Features

Feature	Design Value
Dual-sided cooling architecture	Reduces R_θJA to 12.5 °C/W (mounted on 1-in² Cu board) and enables >2× power density vs. SO-8 MOSFETs.
C_dv/dt immunity	High immunity to false turn-on during high dV/dt transitions-validated for synchronous buck operation with 12 V input and fast edge rates.
Ultra-low package inductance	Minimizes voltage overshoot and ringing during hard switching-critical for maintaining MOSFET SOA in high-frequency VRMs.
Optimized R_DS(on)/Q_g ratio	2.7 mΩ/28 nC achieves best-in-class figure-of-merit (FOM) for 20 V synchronous FETs-balancing conduction and switching loss.
RoHS-compliant lead-free	Qualified for 260°C reflow; compatible with standard vapor-phase, IR, and convection soldering per AN-1035.

Applications

CPU Core Power Delivery

GPU Voltage Regulator Modules

Use Scenario: High-current, multi-phase buck converter supplying dynamic load currents up to 200 A to Intel/AMD desktop/server CPUs.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 300–1000 kHz with tight dead-time control.

Use Value: 2.7 mΩ R_DS(on) and 1.0 °C/W R_θJ-PCB enable >92% full-load efficiency and <70°C junction rise under 150 A sustained load.

Use Scenario: Compact, high-density VRM on graphics card PCBs where vertical space is limited to <1.0 mm.

IC Role / Device Role / Timing Role: High-side switching FET in interleaved 2-phase buck stage with 500 kHz switching frequency.

Use Value: 0.7 mm profile allows stacking with inductors and capacitors; low Q_gd (8.8 nC) ensures robust gate drive stability at fast dV/dt.

Point-of-Load Converters

ASIC/FPGA Core Supplies

Use Scenario: Single-phase 12 V to 0.8–1.2 V converter located near processor die on server motherboard.

IC Role / Device Role / Timing Role: Primary power switch handling transient loads >100 A/µs with minimal voltage droop.

Use Value: High C_dv/dt immunity prevents spurious turn-on during load steps; fast t_f (6.6 ns) limits cross-conduction loss.

Use Scenario: Multi-rail power system for AI accelerators requiring independent, tightly regulated 0.75 V, 0.85 V, and 1.0 V supplies.

IC Role / Device Role / Timing Role: Synchronous FET in digitally controlled buck regulator with adaptive dead-time adjustment.

Use Value: Gate threshold consistency (±0.45 V) across temperature ensures predictable timing margins in closed-loop digital control.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency synchronous buck FET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6614TR1PBF	R_DS(on) = 3.2 mΩ @ 10 V; Q_g = 24 nC; same MX package	Slightly higher conduction loss but lower gate charge-better for very high-frequency (>1.2 MHz) designs where switching loss dominates.	Select when prioritizing gate drive efficiency over absolute R_DS(on) minimization in ultra-high-frequency POE converters.
SiR626DP-T1-GE3	R_DS(on) = 2.5 mΩ @ 10 V; Q_g = 31 nC; PowerPAK® SO-8 package (not DirectFET)	Lower R_DS(on) but higher Q_g and no top-side cooling-requires larger PCB copper area for thermal management.	Choose when legacy SO-8 layout reuse is mandatory and dual-sided cooling is unavailable.

Compared with IRF6620TR1PBF, IRF6614TR1PBF trades 0.5 mΩ higher R_DS(on) for 4 nC lower Q_g, favoring high-frequency efficiency, while SiR626DP-T1-GE3 offers marginally better conduction loss but lacks DirectFET's thermal advantages-making IRF6620TR1PBF optimal for space-constrained, thermally aggressive CPU VRMs.

Availability

IRF6620TR1PBF is available at Aetrix Electronics and suitable for CPU core power delivery, GPU voltage regulator modules, and point-of-load converters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for IRF6620TR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with headquarters in Munich, Germany.

The DirectFET product line was developed to overcome thermal and inductance limitations of traditional surface-mount MOSFETs-targeting high-efficiency, high-power-density DC-DC conversion in computing and communications infrastructure.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRF6620TR1PBF supports 15 A continuous drain current at T_C = 100°C, derived from its linear derating factor of 0.017 W/°C and 89 W P_D rating at T_C = 25°C. This value assumes proper double-sided cooling per AN-1035 layout guidelines and accounts for R_DS(on) increase with junction temperature.

Does this MOSFET require a negative gate drive to prevent unintended turn-on?

No-IRF6620TR1PBF does not require negative gate drive. Its high C_dv/dt immunity (validated in synchronous buck operation) and gate threshold voltage range (1.55–2.45 V) allow reliable 0–10 V gate drive. However, a small negative offset (−1 V) may be used in extreme dV/dt environments to further suppress Miller-induced turn-on.

Can IRF6620TR1PBF be paralleled with identical units for higher current capacity?

Yes-its negative R_DS(on) temperature coefficient (−5.8 mV/°C for V_GS(th)) and matched threshold voltage distribution enable stable current sharing. Parallel operation requires symmetrical PCB layout, matched gate drive impedance, and shared thermal interface to maintain <5°C inter-device junction temperature delta.

Is the DirectFET MX package compatible with standard SO-8 reflow profiles?

Yes-the IRF6620TR1PBF is qualified for lead-free reflow up to 260°C peak temperature and complies with JEDEC J-STD-020. Its copper-can construction and thermal mass require adherence to AN-1035's recommended ramp rates, soak time, and cooling profiles to avoid delamination or voiding in the substrate-to-PCB interface.

IRF6620TR1PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MX

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 27A (Ta), 150A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.7mOhm @ 27A, 10V

Vgs(th) (Max) @ Id:: 2.45V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4130 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 89W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MX

IRF6620TR1PBF FAQ

1.How can I place an order for IRF6620TR1PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6620TR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6620TR1PBF reliable?

The price and inventory of IRF6620TR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6620TR1PBF is usually 5 days.

3.What payment methods are accepted for IRF6620TR1PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6620TR1PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6620TR1PBF?

IRF6620TR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6620TR1PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6620TR1PBF?

For technical support, including IRF6620TR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6620TR1PBF requirements.

6.How does Aetrix verify that IRF6620TR1PBF is sourced from the original manufacturer or authorized distributors?

All IRF6620TR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6620TR1PBF meets industry standards.

7.What is the process for return or replacement of IRF6620TR1PBF?

All IRF6620TR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6620TR1PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6620TR1PBF part is unused and in its original packaging.

Return procedure for IRF6620TR1PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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