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Infineon Technologies IRF6621TR1
- Part No.:
- IRF6621TR1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- DirectFET™ Isometric SQ
- Datasheet:
-
IRF6621TR1.pdf
- Description:
- MOSFET N-CH 30V 12A DIRECTFET
- Quantity:
- Payment:
- Shipping:
Inventory:9,919
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Product details
Overview
IRF6621TR1 from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode Power MOSFET in DirectFET® SQ package, optimized as the control FET in high-frequency synchronous buck converters operating from a 12 V input bus. It delivers RDS(on) = 7.0 mΩ @ VGS = 10 V, Qg = 11.7 nC, and ultra-low package inductance for minimized conduction and switching losses in CPU core power delivery.
For engineers reviewing the IRF6621TR1 datasheet, IRF6621TR1 pinout, IRF6621TR1 application, or IRF6621TR1 equivalent, key selection criteria include its low-profile (0.7 mm) dual-sided cooling capability, 30 V VDSS, 9.6 A continuous drain current at TA = 25°C, and compatibility with standard SMT reflow processes per AN-1035.
Technical Context
The IRF6621TR1 employs HEXFET® silicon on a copper substrate DirectFET SQ outline, enabling top-side (Drain) and bottom-side (Source/Gate) thermal paths. Its gate threshold voltage (VGS(th) = 1.8 V typ.) and low Qgd/Qg ratio (4.2/11.7 nC) support fast, low-loss hard-switching in high-duty-cycle DC-DC topologies.
Designed specifically for control-FET operation in multiphase VRMs, it features tightly controlled RDS(on) temperature coefficient (24 mV/°C), low Ciss = 1460 pF, and body diode trr = 9.8 ns - all critical for minimizing shoot-through risk and reverse recovery loss during dead-time transitions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V maximum - supports 12 V bus systems with margin against transient overvoltage |
| RDS(on) | 7.0 mΩ @ VGS = 10 V - enables <1 W conduction loss at 12 A in compact VRM layouts |
| Qg | 11.7 nC typ. - reduces gate drive power and allows use of lower-current drivers |
| Qgd | 4.2 nC typ. - limits Miller-induced turn-on risk during high dv/dt switching |
| tr/tf | 14 ns / 4.1 ns - supports >1 MHz switching without excessive EMI generation |
| RθJC | 3.0 °C/W - enables efficient heat extraction via PCB copper and optional clip heatsink |
| Package Height | 0.7 mm max - fits under low-profile VRM inductors and enables dual-sided board cooling |
Pinout & Package
IRF6621TR1 uses the DirectFET® SQ (Small Size Can, Q-Designation) package - a copper-can, top-drain, bottom-source/gate layout with no leads. Dimensions: 4.8 × 3.8 × 0.7 mm (L×W×H), footprint compatible with MICRO-8 land patterns.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Top Metal Pad | Drain (D) | Primary heat path and high-current output node; soldered to top-side copper pour |
| Bottom Left Pad | Source (S) | Low-impedance return path; connects to ground plane and serves as thermal sink |
| Bottom Right Pad | Gate (G) | Control terminal with low-inductance routing; isolated by dielectric layer from Source |
Key Features
| Feature | Design Value |
|---|---|
| Dual-sided cooling interface | Enables simultaneous thermal extraction from top (Drain) and bottom (Source/Gate), reducing RθJA by 80% vs. SO-8 |
| Ultra-low package inductance | Minimizes voltage overshoot and ringing during 100+ A/µs switching in multiphase VRMs |
| Optimized for control-FET role | Low Qgd/Qg ratio and tight RDS(on) distribution improve phase current balance in multi-phase buck stages |
| RoHS-compliant, lead/bromide-free | Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1) for unlimited floor life |
Applications
| CPU Core Voltage Regulator | GPU Power Delivery |
|---|---|
Use Scenario: High-current, multi-phase buck converter supplying dynamic load currents up to 200 A to modern x86 or ARM processors. IC Role / Device Role / Timing Role: Control FET switching at 300–1000 kHz with precise dead-time control to minimize shoot-through loss. Use Value: 7.0 mΩ RDS(on) and 11.7 nC Qg reduce total power loss by ≥15% vs. legacy SO-8 MOSFETs at 12 A per phase. | Use Scenario: Compact, high-density VRM on graphics card PCBs where height clearance is limited to <1.0 mm. IC Role / Device Role / Timing Role: Top-side switched FET in interleaved buck stage, leveraging DirectFET's 0.7 mm profile for stacked inductor integration. Use Value: Dual-sided cooling maintains TJ < 105°C at 15 A continuous, eliminating need for discrete heatsinks. |
| Server Memory Regulator | AI Accelerator Board Power |
Use Scenario: Point-of-load (POL) regulator for DDR5 memory modules requiring fast transient response and low noise. IC Role / Device Role / Timing Role: High-side switch in 500 kHz–1.2 MHz buck stage, driven by integrated controller with adaptive gate timing. Use Value: Low Qrr = 10 nC and trr = 9.8 ns suppress body-diode reverse recovery spikes that degrade signal integrity near memory buses. | Use Scenario: Distributed power architecture on AI training accelerator cards with multiple 50–100 A rails. IC Role / Device Role / Timing Role: Primary control FET in 4-phase, 600 kHz buck converter feeding FPGA or ASIC core logic. Use Value: 3.0 °C/W RθJC enables direct thermal coupling to cold plate via top-side Drain pad, sustaining >92% efficiency at full load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar control-FET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF6614TR1PBF | RDS(on) = 5.8 mΩ @ 10 V, Qg = 13.2 nC, same SQ package | Slightly lower RDS(on) but higher gate charge increases driver loss at >1 MHz | Preferred when conduction loss dominates and gate drive capability permits higher Qg |
| SiR626DP-T1-GE3 | RDS(on) = 6.2 mΩ @ 10 V, Qg = 10.5 nC, PowerPAK® SO-8 package (1.6 mm height) | Higher profile prevents dual-sided cooling; requires larger PCB area than SQ footprint | Selected when legacy SO-8 layout reuse is mandatory and height budget allows ≥1.6 mm |
Compared with IRF6621TR1, IRF6614TR1PBF trades marginally better conduction performance for increased gate drive burden, while SiR626DP-T1-GE3 sacrifices thermal advantage for package compatibility - making IRF6621TR1 optimal for space-constrained, thermally aggressive VRM designs.
Availability
IRF6621TR1 is available at Aetrix Electronics and suitable for CPU core voltage regulators, GPU power delivery modules, and AI accelerator board power supplies requiring stable component supply, RoHS compliance, and MSL-1 handling.
Supply support for IRF6621TR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon and wide-bandgap device design.
The IRF6621TR1 belongs to Infineon's DirectFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing and data center power applications.
FAQ
What is the maximum junction temperature rating for IRF6621TR1?
The IRF6621TR1 has a maximum operating junction temperature (TJ) of +150°C, validated across its full absolute maximum ratings range. Thermal design must ensure steady-state TJ remains below this limit under worst-case ambient and power dissipation conditions, using the specified RθJC = 3.0°C/W and recommended double-sided cooling per AN-1035.
Does IRF6621TR1 support 4.5 V gate drive in control-FET applications?
Yes - IRF6621TR1 specifies RDS(on) = 9.3 mΩ @ VGS = 4.5 V, making it fully compatible with 5 V logic-level gate drivers used in many VRM controllers. Its VGS(th) = 1.8 V (typ.) ensures reliable turn-on even with gate drive droop under high-current transients.
How does the DirectFET SQ package improve thermal performance over SO-8?
The DirectFET SQ package achieves 80% lower thermal resistance versus SO-8 by exposing both Drain (top) and Source (bottom) directly to copper planes, enabling simultaneous heat extraction from two PCB sides. Its copper-can construction and absence of bond wires further reduce thermal path resistance compared to leadframe-based packages.
Is IRF6621TR1 suitable for avalanche energy handling in unclamped inductive switching?
Yes - IRF6621TR1 is rated for EAS = 30 mJ (single-pulse) at TJ = 25°C, with IAS = 9.6 A. This capability supports robustness in synchronous rectifier failure modes or layout-induced parasitic inductance, though repetitive avalanche operation is not recommended per datasheet limitations.
IRF6621TR1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- DirectFET™ Isometric SQ
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 12A (Ta), 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 9.1mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id:
- 2.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 17.5 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1460 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.2W (Ta), 42W (Tc)
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DIRECTFET™ SQ
IRF6621TR1 FAQ
1.How can I place an order for IRF6621TR1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF6621TR1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF6621TR1 reliable?
The price and inventory of IRF6621TR1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6621TR1 is usually 5 days.
3.What payment methods are accepted for IRF6621TR1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6621TR1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF6621TR1?
IRF6621TR1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF6621TR1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF6621TR1?
For technical support, including IRF6621TR1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6621TR1 requirements.
6.How does Aetrix verify that IRF6621TR1 is sourced from the original manufacturer or authorized distributors?
All IRF6621TR1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6621TR1 meets industry standards.
7.What is the process for return or replacement of IRF6621TR1?
All IRF6621TR1 units undergo pre-shipment inspection (PSI). If there is an issue with IRF6621TR1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF6621TR1 part is unused and in its original packaging.
Return procedure for IRF6621TR1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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