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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6621TR1PBF

Name: IRF6621TR1PBF
Brand: Infineon Technologies
SKU: IRF6621TR1PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6621TR1PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric SQ

Datasheet:: IRF6621TR1PBF.pdf

Description:: MOSFET N-CH 30V 12A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6621TR1PBF from Infineon Technologies is a 30 V, 9.6 A N-channel enhancement-mode Power MOSFET in DirectFET® SQ package, optimized for synchronous buck converters operating from 12 V input bus. It delivers 7.0 mΩ R_DS(on) @ 10 V, 11.7 nC total gate charge, and ultra-low 0.7 mm profile for dual-sided cooling-enabling high-efficiency CPU core DC-DC conversion in server and notebook power stages.

For engineers reviewing the IRF6621TR1PBF datasheet, IRF6621TR1PBF pinout, IRF6621TR1PBF application, or IRF6621TR1PBF equivalent, key selection criteria include low R_DS(on) at 4.5 V (9.3 mΩ), minimized Q_gd/Q_g ratio (0.36), 3.0 °C/W R_θJC, avalanche-rated operation (E_AS = 40 mJ), and compatibility with standard SMT reflow profiles up to 260 °C.

Technical Context

This MOSFET employs HEXFET® silicon on a copper substrate DirectFET SQ package, enabling symmetric thermal paths through top (Drain) and bottom (Source/Gate) surfaces. Its gate threshold voltage (1.8 V typ.) and steep transconductance (31 S) support robust 4.5 V logic-level drive in high-frequency synchronous rectification.

The device features low output capacitance (C_oss = 310 pF @ 15 V) and reverse transfer capacitance (C_rss = 170 pF), minimizing Miller-induced switching delay and dv/dt-induced turn-on risk. Body diode recovery is characterized with t_rr = 9.8 ns and Q_rr = 10 nC under clamped inductive conditions (I_S = 9.6 A, dI/dt = 420 A/µs).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V maximum drain-source breakdown - supports 12 V bus designs with ≥2.5× voltage margin against transients.
R_DS(on) @ 10 V	7.0 mΩ typical - enables <1.2 W conduction loss at 12 A continuous current in control FET position.
R_DS(on) @ 4.5 V	9.3 mΩ typical - ensures stable on-state performance with 5 V or 4.5 V gate drivers in compact VRMs.
Q_g total	11.7 nC typical - balances switching speed and driver power loss for 300–1000 kHz DC-DC operation.
Q_gd	4.2 nC typical - low gate-drain charge reduces Miller plateau duration and improves hard-switching robustness.
R_θJC	3.0 °C/W typical - allows direct heatsink mounting to top Drain surface for dual-sided thermal management.
E_AS	40 mJ single-pulse avalanche energy - provides ruggedness against inductive switching faults without external snubbers.

Pinout & Package

IRF6621TR1PBF uses the DirectFET® SQ (Small Size Can, Q-Designation) package: 4.8 × 3.8 × 0.7 mm, copper substrate with exposed top-side Drain and bottom-side Source/Gate terminals. Compatible with MICRO-8 footprint layouts and vapor-phase/reflow soldering per AN-1035.

Pin/Terminal	Circuit Role	Design Meaning
Top metal pad	Drain (D)	Primary high-current path and thermal interface - must be soldered to PCB copper pour or heatsink for optimal R_θJA.
Bottom left pad	Source (S)	Low-side return path and thermal conduction path - connects to ground plane and enables dual-sided cooling.
Bottom right pad	Gate (G)	Control terminal with 2.0 Ω internal gate resistance - requires low-inductance layout to minimize ringing during 100+ A/µs switching.

Key Features

Feature	Design Value
Ultra-low profile (0.7 mm)	Enables stacking of multiple power stages in height-constrained VRM modules without airflow obstruction.
Dual-sided cooling capability	Reduces effective thermal resistance by 80% vs. SO-8 - critical for >50 A/in² power density in CPU core supplies.
Optimized gate charge ratio (Q_gd/Q_g = 0.36)	Minimizes Miller-induced shoot-through risk in synchronous buck top-FET operation at 500 kHz+.
Lead-free and RoHS-compliant	Qualified for 260 °C lead-free reflow - eliminates post-assembly lead contamination concerns in high-reliability computing.
Body diode with fast recovery (t_rr = 9.8 ns)	Reduces dead-time losses and EMI in synchronous rectification without requiring external Schottky diodes.

Applications

CPU Core Voltage Regulator

GPU Power Delivery

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.3 V to modern x86 or ARM processors at up to 120 A per phase.

IC Role / Device Role / Timing Role: Control FET in synchronous buck stage, switching at 300–1000 kHz with precise duty-cycle control.

Use Value: 7.0 mΩ R_DS(on) and 11.7 nC Q_g reduce combined conduction + switching loss to <1.8 W at 12 A, improving VR efficiency by ≥1.2% over SO-8 alternatives.

Use Scenario: Compact, low-profile power stage in discrete GPU VRMs where board height is limited to <4 mm.

IC Role / Device Role / Timing Role: High-side switch in 2-phase or 3-phase interleaved buck regulator driving GDDR6 memory rails.

Use Value: 0.7 mm profile enables vertical stacking with inductors and capacitors; dual-sided cooling maintains T_J < 105 °C at 90 A peak current.

Server Memory Regulator

AI Accelerator Power Stage

Use Scenario: DDR5 memory subsystem supply delivering 1.1 V at up to 60 A with tight transient response requirements.

IC Role / Device Role / Timing Role: Low-R_DS(on) control FET paired with low-Q_rr sync FET to minimize cross-conduction loss during 500 ns dead time.

Use Value: 9.3 mΩ @ 4.5 V ensures stable on-resistance with 5 V gate drive; 10 nC Q_rr limits body-diode recovery loss to <12 µJ per cycle.

Use Scenario: High-density power delivery for FPGA or ASIC-based AI accelerators requiring >200 W per module in 1U chassis.

IC Role / Device Role / Timing Role: Primary switching element in multiphase buck converter operating at 600 kHz with digital PWM controller feedback.

Use Value: 3.0 °C/W R_θJC and top-side Drain allow direct thermal interface to cold plate, sustaining 150 A continuous current with ΔT < 45 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6614TR1PBF	Higher R_DS(on) (9.0 mΩ @ 10 V), same Q_g (11.7 nC), identical SQ package	Lower current rating (7.5 A vs. 9.6 A) - suitable only for ≤60 A VRM phases	Select when lower cost is prioritized and thermal margin permits higher conduction loss.
SiR626DP-T1-GE3	Lower R_DS(on) (5.2 mΩ @ 10 V), higher Q_g (22 nC), PowerPAK® 1212-8 package	Thicker profile (0.9 mm) and single-sided cooling - limits power density in stacked layouts	Choose for highest efficiency at lower switching frequencies (<300 kHz) where gate drive capability supports 22 nC.

Compared with IRF6614TR1PBF and SiR626DP-T1-GE3, the IRF6621TR1PBF uniquely balances low R_DS(on), low Q_g, and sub-0.7 mm height-making it optimal for high-frequency, space-constrained CPU/GPU VRMs where dual-sided thermal management is essential.

Availability

IRF6621TR1PBF is available at Aetrix Electronics and suitable for CPU core voltage regulators, GPU power delivery modules, DDR5 memory VRMs, and AI accelerator power stages requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRF6621TR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The IRF6621TR1PBF belongs to Infineon's DirectFET® Power MOSFET product line, engineered specifically for high-efficiency, high-density DC-DC conversion in computing and data center power systems where thermal and space constraints dominate design trade-offs.

FAQ

What is the maximum continuous drain current at 70°C ambient temperature?

The IRF6621TR1PBF supports 13 A continuous drain current at T_A = 70°C with proper PCB copper area (1 in² Cu board). This rating assumes V_GS = 10 V, no forced airflow, and adherence to AN-1035 layout guidelines for DirectFET SQ thermal pads. Derating begins above 70°C at 1.4 W/°C.

Is IRF6621TR1PBF suitable for 5 V gate drive applications?

Yes - its R_DS(on) is specified at 9.3 mΩ @ 4.5 V and 12.1 mΩ max @ 4.5 V, confirming reliable enhancement-mode operation with standard 5 V logic-level drivers. Gate threshold voltage is 1.8 V typical (1.35–2.25 V range), ensuring full turn-on with 5 V drive even at elevated junction temperatures.

How does the DirectFET SQ package improve thermal performance over SO-8?

The DirectFET SQ package reduces junction-to-ambient thermal resistance by 80% versus SO-8 due to copper substrate construction and dual-sided cooling: top-side Drain and bottom-side Source both serve as thermal interfaces. Measured R_θJA is 12.5 °C/W (vs. ~60 °C/W for SO-8) on 1 in² Cu board with double-sided heatsinking.

Does IRF6621TR1PBF have avalanche capability, and how is it rated?

Yes - it is fully rated for repetitive unclamped inductive switching with E_AS = 40 mJ (single-pulse) at T_J = 25°C. Testing follows JEDEC JESD24-1 with L = 0.29 mH, I_AS = 9.6 A, and R_G = 25 Ω. The device sustains this energy without parameter degradation when operated within absolute maximum ratings.

IRF6621TR1PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric SQ

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Ta), 55A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.1mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17.5 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1460 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.2W (Ta), 42W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ SQ

IRF6621TR1PBF FAQ

1.How can I place an order for IRF6621TR1PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6621TR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6621TR1PBF reliable?

The price and inventory of IRF6621TR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6621TR1PBF is usually 5 days.

3.What payment methods are accepted for IRF6621TR1PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6621TR1PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6621TR1PBF?

IRF6621TR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6621TR1PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6621TR1PBF?

For technical support, including IRF6621TR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6621TR1PBF requirements.

6.How does Aetrix verify that IRF6621TR1PBF is sourced from the original manufacturer or authorized distributors?

All IRF6621TR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6621TR1PBF meets industry standards.

7.What is the process for return or replacement of IRF6621TR1PBF?

All IRF6621TR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6621TR1PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6621TR1PBF part is unused and in its original packaging.

Return procedure for IRF6621TR1PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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