Infineon Technologies IRF6621TRPBF

Overview

IRF6621TRPBF from Infineon Technologies is a 30 V, 9.6 A N-channel enhancement-mode Power MOSFET in DirectFET® SQ package, optimized for synchronous buck converters operating from 12 V input bus. It delivers 7.0 mΩ R_DS(on) at V_GS = 10 V and 9.3 mΩ at 4.5 V, with 11.7 nC total gate charge and ultra-low 0.7 mm profile enabling dual-sided cooling in CPU core DC-DC power stages.

For engineers reviewing the IRF6621TRPBF datasheet, IRF6621TRPBF pinout, IRF6621TRPBF application, or IRF6621TRPBF equivalent, key selection criteria include low R_DS(on) at 4.5 V gate drive, minimized Q_g/Q_gd ratio for fast switching, thermal resistance of 3.0 °C/W (J–C), and compatibility with standard SMT reflow profiles up to 260 °C.

Technical Context

This MOSFET employs HEXFET® silicon with trench-gate structure and is packaged in a copper-can DirectFET SQ outline featuring top-side drain and bottom-side source/gate terminals. Its gate threshold voltage (1.35–2.25 V) enables robust 4.5 V logic-level drive, while low Q_gd/Q_g ratio (4.2/11.7 nC) ensures high dV/dt immunity and reduced Miller-induced turn-off delay.

The device supports clamped inductive switching with 9.6 A pulsed drain current and 10 nC reverse recovery charge (Q_rr) at di/dt = 420 A/µs. Its junction-to-case thermal resistance of 3.0 °C/W and dual-sided cooling capability enable high-power density designs where thermal management is constrained by board thickness or airflow.

Key Specifications

Pinout & Package

IRF6621TRPBF uses the DirectFET® SQ (Small Size Can, Q-Designation) package: a copper-can, top-drain, bottom-source/gate layout with no leads. Dimensions are 4.8 mm × 3.8 mm × 0.7 mm (L × W × H). The package enables PCB-level thermal conduction through both top (drain) and bottom (source/gate) metal surfaces.

Key Features

Applications

Availability

IRF6621TRPBF is available at Aetrix Electronics and suitable for CPU core voltage regulators, GPU power delivery modules, and ASIC point-of-load converters requiring stable component supply, RoHS-compliant manufacturing, and high-volume availability with traceable lot control.

Supply support for IRF6621TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global R&D and wafer fabrication infrastructure.

The IRF6621TRPBF belongs to Infineon's DirectFET® Power MOSFET product line, engineered specifically for high-frequency, high-density DC-DC conversion in computing and communications infrastructure where thermal and space constraints dominate design trade-offs.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The IRF6621TRPBF supports 13 A continuous drain current at T_A = 70°C with proper PCB copper area (1 in² Cu board). This rating assumes V_GS = 10 V, R_θJA = 12.5 °C/W, and steady-state thermal conditions per datasheet Figure 3 and Absolute Maximum Ratings table.

Can this MOSFET be used with 3.3 V gate drive?

No - the gate threshold voltage range is 1.35–2.25 V, but full enhancement requires ≥4.5 V. At 3.3 V, R_DS(on) rises sharply (>25 mΩ), increasing conduction loss beyond acceptable levels. It is specified and characterized only for 4.5 V and 10 V gate drive.

Is the body diode suitable for asynchronous operation?

Yes - the intrinsic body diode has V_SD = 0.8–1.0 V at 9.6 A and t_rr = 9.8 ns, making it usable in asynchronous buck configurations. However, its Q_rr = 10 nC is optimized for synchronous rectification, not freewheeling-only use.

Does the DirectFET SQ package require special PCB layout rules?

Yes - AN-1035 mandates specific stencil aperture design (0.12 mm thickness, 80% area ratio), substrate pad geometry (copper-filled thermal pads with solder mask defined), and reflow profile (peak 260 °C, 10–15 sec above 217 °C) to ensure void-free solder joints and mechanical reliability.